TPS5430DDA.A
TPS543x 3A, Wide Input Range, Step-Down Converter
Manufacturer
Texas Instruments
Overview
Part: TPS5430, TPS5431 from Texas Instruments
Type: Synchronous Buck Converter
Key Specs:
- Input Voltage Range (TPS5430): 5.5V to 36V
- Input Voltage Range (TPS5431): 5.5V to 23V
- Continuous Output Current: Up to 3A
- Peak Output Current: 4A
- Efficiency: Up to 95%
- Integrated MOSFET Switch Resistance: 100mΩ
- Output Voltage Range: Adjustable down to 1.22V
- Output Voltage Accuracy: 1.5% initial
- Switching Frequency: Fixed 500kHz
- Operating Junction Temperature: –40°C to 125°C
Features:
- Wide input voltage range (TPS5430: 5.5V to 36V, TPS5431: 5.5V to 23V)
- Up to 3A continuous (4A peak) output current
- High efficiency up to 95% enabled by 100mΩ integrated MOSFET switch
- Wide output voltage range: adjustable down to 1.22V with 1.5% initial accuracy
- Internal compensation minimizes external parts count
- Fixed 500kHz switching frequency for small filter size
- Improved line regulation and transient response by input voltage feedforward
- System protected by overcurrent limiting, overvoltage protection, and thermal shutdown
- –40°C to 125°C operating junction temperature range
- Available in small thermally enhanced 8-pin SO PowerPAD™ integrated circuit package
- Create a custom design using the TPS5430 with the WEBENCH® Power Designer
Applications:
- Consumer: set-top box, DVD, LCD displays
- Industrial and car audio power supplies
- Battery chargers, high-power LED supply
- 12V and 24V distributed power systems
Package:
- 8-pin SO PowerPAD™ integrated circuit package
- DDA (HSOP, 8)
Features
- Wide input voltage range:
- TPS5430: 5.5V to 36V
- TPS5431: 5.5V to 23V
- Up to 3A continuous (4A peak) output current
- High efficiency up to 95% enabled by 100mΩ integrated MOSFET switch
- Wide output voltage range: adjustable down to 1.22V with 1.5% initial accuracy
- Internal compensation minimizes external parts count
- Fixed 500kHz switching frequency for small filter size
- Improved line regulation and transient response by input voltage feedforward
- System protected by overcurrent limiting, overvoltage protection, and thermal shutdown
- –40°C to 125°C operating junction temperature range
- Available in small thermally enhanced 8-pin SO PowerPAD™ integrated circuit package
- Create a custom design using the TPS5430 with the WEBENCH® Power Designer
Applications
- Consumer: set-top box, DVD, LCD displays
- Industrial and car audio power supplies
- Battery chargers, high-power LED supply
- 12V and 24V distributed power systems
3 Description
The TPS543x is a high-output-current PWM converter that integrates a low-resistance, high-side N-channel MOSFET. Included on the substrate with the listed features are a high-performance voltage error amplifier that provides tight voltage regulation accuracy under transient conditions; an undervoltagelockout circuit to prevent start-up until the input voltage reaches 5.5V; an internally set slow-start circuit to limit inrush currents; and a voltage feedforward circuit to improve the transient response. Using the ENA pin, shutdown supply current is reduced to 15μA typically. Other features include an active-high enable, overcurrent limiting, overvoltage protection and thermal shutdown. To reduce design complexity and external component count, the TPS543x feedback loop is internally compensated. The TPS5431 is intended to operate from power rails up to 23V. The TPS5430 regulates a wide variety of power sources including 24V bus.
The TPS543x device is available in a thermally enhanced, easy to use 8-pin SOIC PowerPAD integrated circuit package. TI provides evaluation modules and the Designer software tool to aid in quickly achieving high-performance power supply designs to meet aggressive equipment development cycles.
Device Information
| PART NUMBER | PACKAGE(1) | INPUT VOLTAGE |
|---|---|---|
| TPS5430 | DDA (HSOP, 8) | 5.5V to 36V |
| TPS5431 | DDA (HSOP, 8) | 5.5V to 23V |
(1) For more information, see Section 10.
Simplified Schematic Efficiency vs Output Current
Pin Configuration
Figure 4-1. DDA Package 8-Pin SOIC with Thermal Pad Top View
| PIN | TYPE | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| BOOT | 1 | O | Boost capacitor for the high-side FET gate driver. Connect 0.01 μF low ESR capacitor from BOOT pin to PH pin. |
| NC | 2, 3 | — | Not connected internally. |
| VSENSE | 4 | I | Feedback voltage for the regulator. Connect to output voltage divider. |
| ENA | 5 | I | On and off control. Below 0.5 V, the device stops switching. Float the pin to enable. |
| GND | 6 | — | Ground. Connect to DAP. |
| VIN | 7 | — | Input supply voltage. Bypass VIN pin to GND pin close to device package with a high quality, low ESR ceramic capacitor. |
| PH | 8 | I | Source of the high side power MOSFET. Connected to external inductor and diode. |
| DAP | — | GND pin must be connected to the exposed pad for proper operation. |
Table 4-1. Pin Functions
Electrical Characteristics
TJ = –40°C to +125°C, VIN = 5.5 V to 36 V. Typical values are at TJ = 25°C and VIN = 12 V (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE (VIN PIN) | ||||||
| IQ(VIN) | VIN quiescent current | Non-switching, VSENSE = 2V, PH pin open | 2 | 4.4 | mA | |
| ISD(VIN) | VIN shutdown supply current | Shutdown, ENA = 0 V | 15 | 50 | μA | |
| UVLO | ||||||
| VINUVLO(R) | VIN UVLO rising threshold | VVIN rising | 5.3 | 5.5 | V | |
| VINUVLO(H) | VIN UVLO hysteresis | 0.35 | V | |||
| VOLTAGE REFERENCE | ||||||
| VFB | FB voltage | TJ = 25°C | 1.202 | 1.221 | 1.239 | V |
| VFB | FB voltage | TJ = –40°C to 125°C | 1.196 | 1.221 | 1.245 | V |
| OSCILLATOR | ||||||
| fSW | Switching frequency | 400 | 500 | 600 | kHz | |
| tON(min) | Minimum ON pulse width | 150 | 200 | ns | ||
| DMAX | Maximum Duty Cycle | fSW = 500 kHz | 87% | 89% | ||
| ENABLE (ENA PIN) | ||||||
| VEN(R) | ENA voltage rising threshold | 1.3 | V | |||
| VEN(F) | ENA voltage falling threshold | 0.5 | V | |||
| VEN(H) | ENA voltage hysteresis | 325 | mV | |||
| tSS | Internal slow-start time (0~100%) | 5.4 | 8 | 10 | ms | |
| OVERCURRENT PROTECTION | ||||||
| IHS(OC) | High-side peak current limit | 4.0 | 5.0 | 6.0 | A | |
| Hiccup time before re-start | 13 | 16 | 20 | ms | ||
| OUTPUT MOSFET | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | VIN = 12 V, VBOOT-SW = 4.5 V | 100 | 230 | mΩ | |
| RDSON(HS) | High-side MOSFET on-resistance | VIN = 5.5 V, VBOOT-SW = 4.0 V | 125 | mΩ | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD) | Thermal shutdown threshold (1) | Temperature rising | 135 | 162 | °C | |
| TJ(HYS) | Thermal shutdown hysteresis (1) | 14 | °C |
(1) Parameter specified by design, statistical analysis and production testing of correlated parameters. Not production tested.
Absolute Maximum Ratings
Over operating junction temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN(2) to GND, TPS5430 | –0.3 | 40 | V |
| Input voltage | VIN to GND, TPS5431 | –0.3 | 25 | V |
| Input voltage | ENA to GND | –0.3 | 7 | V |
| Input voltage | VSENSE to GND | –0.3 | 3 | V |
| Output voltage | BOOT to PH | –0.3 | 6 | V |
| Output voltage | PH to GND, (Steady-state)(2) , TPS5430 | –0.6 | 40 | V |
| Output voltage | PH to GND, (Steady-state), TPS5431 | –0.6 | 25 | V |
| Output voltage | PH to GND, (transient < 10ns) | –1.2 | V | |
| Source current | PH | Internally Limited | ||
| Source current | PH Leakage current | 10 | μA | |
| TJ | Operating virtual junction temperature | –40 | 150 | °C |
| Tstg | Storage temperature | –65 | 150 | °C |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) Approaching the absolute maximum rating for the VIN pin may cause the voltage on the PH pin to exceed the absolute maximum rating.
Recommended Operating Conditions
Over operating junction temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Input voltage | Input voltage range, TPS5430 | 5.5 | 36 | V | |
| Input voltage | Input voltage range, TPS5431 | 5.5 | 23 | V | |
| T_J | Operating junction temperature | -40 | 125 | °C |
Thermal Information
| PIN | TYPE | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| BOOT | 1 | O | Boost capacitor for the high-side FET gate driver. Connect 0.01 μF low ESR capacitor from BOOT pin to PH pin. |
| NC | 2, 3 | — | Not connected internally. |
| VSENSE | 4 | I | Feedback voltage for the regulator. Connect to output voltage divider. |
| ENA | 5 | I | On and off control. Below 0.5 V, the device stops switching. Float the pin to enable. |
| GND | 6 | — | Ground. Connect to DAP. |
| VIN | 7 | — | Input supply voltage. Bypass VIN pin to GND pin close to device package with a high quality, low ESR ceramic capacitor. |
| PH | 8 | I | Source of the high side power MOSFET. Connected to external inductor and diode. |
| DAP | — | GND pin must be connected to the exposed pad for proper operation. |
Table 4-1. Pin Functions
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPS5430 | Texas Instruments | — |
| TPS5430-EP | Texas Instruments | — |
| TPS5430-Q1 | Texas Instruments | — |
| TPS5430DDA | Texas Instruments | — |
| TPS5430DDA.B | Texas Instruments | — |
| TPS5430DDAG4 | Texas Instruments | — |
| TPS5430DDAR | Texas Instruments | — |
| TPS5430DDAR.A | Texas Instruments | — |
| TPS5430DDAR.B | Texas Instruments | — |
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