GD25Q16CTJG
GD25Q16C
Manufacturer
GigaDevice Semiconductor (HK) Limited
Category
Integrated Circuits (ICs)
Overview
Part: GD25Q16C
Type: Serial Flash
Key Specs:
- Memory Size: 16M-bit
- Program/Erase Cycles: Minimum 100,000
- Data Retention: 20-year typical
- Voltage Range: 2.7V to 3.6V
- Clock Frequency: 120MHz for fast read with 30PF load
- Deep Power Down Current: 1uA typical
- Standby Current: 1uA typical
- Page Program Time: 0.6ms typical
- Sector Erase Time: 45ms typical
- Block Erase Time: 0.15/0.25s typical
- Chip Erase Time: 7s typical
- Dual I/O Data Transfer Speed: up to 240Mbits/s
- Quad I/O Data Transfer Speed: up to 480Mbits/s
Features:
- Standard, Dual, Quad SPI
- Fast Program/Erase Speed
- Flexible Architecture: Uniform Sector of 4K-Byte, Uniform Block of 32/64K-Byte
- High Speed Clock Frequency
- Low Power Consumption
- Software/Hardware Write Protection
- Advanced Security Features: 128-Bit Unique ID, 4x256-Byte security registers with OTP locks, Discoverable parameters (SFDP) register
- Single Power Supply Voltage
- Allows XIP (execute in place) Operation
- Continuous Read With 8/16/32/64-Byte Wrap
Applications:
- null
Package:
- SOP8: 150mil
- SOP8: 208mil
- VSOP8: 208mil
- DIP8: 300mil
- USON8: 3*2mm
- USON8: 3*4mm
- USON8: 4*4mm, 0.45 thickness
- WSON8: 6*5mm
- TFBGA-24BALL: 6*4 ball array
Features
- ◆ 16M-bit Serial Flash ◆ Fast Program/Erase Speed -256 Bytes per programmable page -Sector Erase time: 45ms typical
- ◆ Standard, Dual, Quad SPI -Chip Erase time: 7s typical -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# -Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆Flexible Architecture -Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 -Uniform Sector of 4K-Byte
- ◆ High Speed Clock Frequency -120MHz for fast read with 30PF load ◆ Low Power Consumption -Dual I/O Data transfer up to 240Mbits/s -1uA typical deep power down current -Quad I/O Data transfer up to 480Mbits/s -1uA typical standby current
- ◆ Software/Hardware Write Protection ◆ Advanced Security Features -Write protect all/portion of memory via software -128-Bit Unique ID for each device -Enable/Disable protection with WP# Pin -4x256-Byte security registers with OTP locks -Top/Bottom Block protection -Discoverable parameters (SFDP) register
- ◆ Minimum 100,000 Program/Erase Cycles ◆ Single Power Supply Voltage
- ◆ Data Retention -20-year data retention typical ◆ Package Information
◆ Allows XIP (execute in place) Operation -SOP8 (208mil) -Continuous Read With 8/16/32/64-Byte Wrap -VSOP8 (208mil)
- -2048K-Byte -Page Program time: 0.6ms typical -Block Erase time: 0.15/0.25s typical
- -Uniform Block of 32/64K-Byte
- -Full voltage range:2.7~3.6V
-
-SOP8 (150mil) -DIP8 (300mil) -USON8 (3*2mm) -USON8 (3*4mm) -USON8 (4*4mm) -WSON8 (6*5mm)
-TFBGA-24(6*4 ball array)
Pin Configuration
| Pin Name | I/O | Description |
|---|---|---|
| CS# | I | Chip Select Input |
| SO (IO1) | I/O | Data Output (Data Input Output 1) |
| WP# (IO2) | I/O | Write Protect Input (Data Input Output 2) |
| VSS | Ground | |
| SI (IO0) | I/O | Data Input (Data Input Output 0) |
| SCLK | I | Serial Clock Input |
| HOLD# (IO3) | I/O | Hold Input (Data Input Output 3) |
| VCC | Power Supply |
Electrical Characteristics
8.1. POWER-ON TIMING
Table6. Power-Up Timing and Write Inhibit Threshold
| Symbol | Parameter | Min. | Max. | Unit |
|---|---|---|---|---|
| tVSL | VCC (min) To CS# Low | 1.8 | ms | |
| VWI | Write Inhibit Voltage | 1.5 | 2.5 | V |
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each Byte contains FFH).The Status Register contains 00H (all Status Register bits are 0).
8.3. ABSOLUTE MAXIMUM RATINGS
| Parameter | Value | Unit |
|---|---|---|
| Ambient Operating Temperature | -40 to 85 -40 to 105 -40 to 125 | °C |
| Storage Temperature | -65 to 150 | °C |
| Applied Input / Output Voltage | -0.6 to VCC+0.4 | V |
| Transient Input / Output Voltage(note: overshoot) | -2.0 to VCC+2.0 | V |
| VCC | -0.6 to 4.2 | V |
Figure38. Maximum Negative and Positive Overshoot Waveform
Absolute Maximum Ratings
| Parameter | Value | Unit |
|---|---|---|
| Ambient Operating Temperature | -40 to 85 -40 to 105 -40 to 125 | °C |
| Storage Temperature | -65 to 150 | °C |
| Applied Input / Output Voltage | -0.6 to VCC+0.4 | V |
| Transient Input / Output Voltage(note: overshoot) | -2.0 to VCC+2.0 | V |
| VCC | -0.6 to 4.2 | V |
Figure38. Maximum Negative and Positive Overshoot Waveform
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| GD25Q16C | unknown | — |
| GD25Q16CEEG | GigaDevice Semiconductor (HK) Limited | — |
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| GD25Q16CQIG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CQJG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CSEG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CSIG | GigaDevice Semiconductor (HK) Limited | 8-SOIC (0.209", 5.30mm Width) |
| GD25Q16CSJG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CTEG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CTIG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CVEG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CVIG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CVJG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CWEG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CWIG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CWJG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CZEG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CZIG | GigaDevice Semiconductor (HK) Limited | — |
| GD25Q16CZJG | GigaDevice Semiconductor (HK) Limited | — |
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