GD25Q16C

<span id="page-28-0"></span>7.20. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH)

Manufacturer

unknown

Overview

Part: GD25Q16C

Type: Serial Flash

Key Specs:

Memory Size: 16M-bit (2048K-Byte)
Page Size: 256 Bytes
Sector Erase Time: 45ms typical
Chip Erase Time: 7s typical
Block Erase Time: 0.15/0.25s typical
Page Program Time: 0.6ms typical
Fast Read Clock Frequency: 120MHz
Quad I/O Data Transfer Rate: up to 480Mbits/s
Dual I/O Data Transfer Rate: up to 240Mbits/s
Standby Current: 1uA typical
Deep Power Down Current: 1uA typical
Program/Erase Cycles: Minimum 100,000
Data Retention: 20-year typical
Supply Voltage Range: 2.7V to 3.6V

Features:

Standard, Dual, Quad SPI
Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
Write protect all/portion of memory via software
128-Bit Unique ID for each device
Allows XIP (execute in place) Operation
Continuous Read With 8/16/32/64-Byte Wrap
Flexible Architecture: Uniform Sector of 4K-Byte
Flexible Architecture: Uniform Block of 32/64K-Byte
Software/Hardware Write Protection
Enable/Disable protection with WP# Pin
Top/Bottom Block protection
4x256-Byte security registers with OTP locks
Discoverable parameters (SFDP) register

Applications:

null

Package:

SOP8: 150mil
SOP8: 208mil
VSOP8: 208mil
DIP8: 300mil
USON8: 3*2mm, THICKNESS 0.45mm
USON8: 3*4mm
USON8: 4*4MM, 0.45 THICKNESS
WSON8: 6*5MM
TFBGA-24BALL: 6*4 ball array

Features

-256 Bytes per programmable page -Sector Erase time: 45ms typical
◆ Standard, Dual, Quad SPI -Chip Erase time: 7s typical
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆Flexible Architecture
-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 -Uniform Sector of 4K-Byte
◆ High Speed Clock Frequency
-120MHz for fast read with 30PF load ◆ Low Power Consumption
- -Quad I/O Data transfer up to 480Mbits/s -1uA typical standby current
- -Write protect all/portion of memory via software -128-Bit Unique ID for each device
◆ Minimum 100,000 Program/Erase Cycles ◆ Single Power Supply Voltage
◆ Data Retention
-20-year data retention typical ◆ Package Information
◆ Allows XIP (execute in place) Operation -SOP8 (208mil)
- -Continuous Read With 8/16/32/64-Byte Wrap -VSOP8 (208mil)
◆ 16M-bit Serial Flash ◆ Fast Program/Erase Speed
-2048K-Byte -Page Program time: 0.6ms typical
- -Block Erase time: 0.15/0.25s typical
- -Uniform Block of 32/64K-Byte
-Dual I/O Data transfer up to 240Mbits/s -1uA typical deep power down current
◆ Software/Hardware Write Protection ◆ Advanced Security Features
-Enable/Disable protection with WP# Pin -4x256-Byte security registers with OTP locks
- -Top/Bottom Block protection -Discoverable parameters (SFDP) register
  - -Full voltage range:2.7~3.6V
  - -SOP8 (150mil)
  - -DIP8 (300mil)
  - -USON8 (3*2mm)
-USON8 (3*4mm)
-USON8 (4*4mm)
- -WSON8 (6*5mm)
- -TFBGA-24(6*4 ball array)

Pin Configuration

N DESCRIPTION
Pin Name I/O
CS#
SO (IO1)
WP# (IO2) I/O
VSS
SI (IO0)
SCLK
HOLD# (IO3) I/O
vcc
Note: CS# must be driven high if chip is not selected. Please don't leave CS# floating any time after power is on.

Electrical Characteristics

(T= -40°C~~85°C, VCC=2.7~~3.6V)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit.
ILI	Input Leakage Current				±2	μA
ILO	Output Leakage Current				±2	μA
ICC1	Standby Current	CS#=VCC,		1	5	μA
		VIN=VCC or VSS
ICC2	Deep Power-Down Current	CS#=VCC,		1	5	μA
		VIN=VCC or VSS
		CLK=0.1VCC /
		0.9VCC
		at 120MHz,		15	20	mA
		Q=Open(1,2,*4 I/O)
ICC3	Operating Current (Read)	CLK=0.1VCC /
		0.9VCC
		at 80MHz,		13	18	mA
		Q=Open(1,2,*4 I/O)
ICC4	Operating Current (PP)	CS#=VCC			20	mA
ICC5	Operating Current (WRSR)	CS#=VCC			20	mA
ICC6	Operating Current (SE)	CS#=VCC			20	mA
ICC7	Operating Current (BE)	CS#=VCC			20	mA
ICC8	Operating Current (CE)	CS#=VCC			20	mA
ICC9	High Performance Current			0.6	1.2	mA
VIL	Input Low Voltage				0.2VCC	V
VIH	Input High Voltage		0.7VCC			V
VOL	Output Low Voltage	IOL =100μA			0.2	V
VOH	Output High Voltage	IOH =-100μA	VCC-0.2			V

1. Typical values given for TA=25°C.
1. Value guaranteed by design and/or characterization, not 100% tested in production.

(T= -40°C~~105°C, VCC=2.7~~3.6V)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit.
ILI	Input Leakage Current				±2	μA
ILO	Output Leakage Current				±2	μA
ICC1	Standby Current	CS#=VCC,		1	25	μA
		VIN=VCC or VSS
ICC2	Deep Power-Down	CS#=VCC,		1	25	μA
	Current	VIN=VCC or VSS
	CLK=0.1VCC /
		0.9VCC
		at 80MHz,		15	20	mA
	Operating Current (Read)	Q=Open(*1 I/O)
ICC3		CLK=0.1VCC /		13
		0.9VCC
		at 60MHz,			18	mA
		Q=Open(1,2,*4 I/O)
ICC4	Operating Current (PP)	CS#=VCC			25	mA
ICC5	Operating Current(WRSR)	CS#=VCC			25	mA
ICC6	Operating Current (SE)	CS#=VCC			25	mA
ICC7	Operating Current (BE)	CS#=VCC			25	mA
ICC8	Operating Current (CE)	CS#=VCC			25	mA
ICC9	High Performance Current			0.6	1.5	mA
VIL	Input Low Voltage		-0.5		0.2VCC	V
VIH	Input High Voltage		0.7VCC		VCC+0.4	V
VOL	Output Low Voltage	IOL =100uA			0.2	V
VOH	Output High Voltage	IOH =-100μA	VCC-0.2			V

1. Typical values given for TA=25°C.
1. Value guaranteed by design and/or characterization, not 100% tested in production.

(T= -40°C~~125°C, VCC=2.7~~3.6V)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit.
ILI	Input Leakage Current				±2	μA
ILO	Output Leakage Current				±2	μA
ICC1	Standby Current	CS#=VCC,		1	30	μA
		VIN=VCC or VSS
ICC2	Deep Power-Down	CS#=VCC,		1	30	μA
	Current	VIN=VCC or VSS
		CLK=0.1VCC /
		0.9VCC
	Operating Current (Read)	at 80MHz,		15	20	mA
		Q=Open(*1 I/O)
ICC3		CLK=0.1VCC /		13
		0.9VCC				mA
		at 60MHz,			18
		Q=Open(1,2,*4 I/O)
ICC4	Operating Current (PP)	CS#=VCC			25	mA
ICC5	Operating Current(WRSR)	CS#=VCC			25	mA
ICC6	Operating Current (SE)	CS#=VCC			25	mA
ICC7	Operating Current (BE)	CS#=VCC			25	mA
ICC8	Operating Current (CE)	CS#=VCC			25	mA
ICC9	High Performance Current			0.6	1.5	mA
VIL	Input Low Voltage		-0.5		0.2VCC	V
VIH	Input High Voltage		0.7VCC		VCC+0.4	V
VOL	Output Low Voltage	IOL =100uA			0.2	V
VOH	Output High Voltage	IOH =-100μA	VCC-0.2			V

1. Typical values given for TA=25°C.
1. Value guaranteed by design and/or characterization, not 100% tested in production.

Absolute Maximum Ratings

Parameter	Value	Unit
Ambient Operating Temperature	-40 to 85	°C
	-40 to 105
	-40 to 125
Storage Temperature	-65 to 150	°C
Applied Input / Output Voltage	-0.6 to VCC+0.4	V
Transient Input / Output Voltage(note: overshoot)	-2.0 to VCC+2.0	V
VCC	-0.6 to 4.2	V

Figure38. Maximum Negative and Positive Overshoot Waveform

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