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GD25Q16C

Serial Flash

The GD25Q16C is a serial flash from GigaDevice. View the full GD25Q16C datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

GigaDevice

Category

Integrated Circuits

Package

SOP8 (150mil), SOP8 (208mil), VSOP8 (208mil), DIP8 (300mil), USON8 (3*2mm, thickness 0.45mm), USON8

Overview

Part: GD25Q16C

Type: Serial Flash

Description: A 16M-bit (2048K-Byte) serial flash memory supporting Standard, Dual, and Quad SPI interfaces, operating from 2.7–3.6V with a high-speed clock frequency of 120MHz.

Operating Conditions:

  • Supply voltage: 2.7–3.6V
  • Max clock frequency: 120MHz (for fast read with 30PF load)
  • Dual I/O Data transfer: up to 240Mbits/s
  • Quad I/O Data transfer: up to 480Mbits/s

Absolute Maximum Ratings:

  • Max supply voltage: null
  • Max continuous current: null
  • Max junction/storage temperature: null

Key Specs:

  • Memory size: 16M-bit (2048K-Byte)
  • Page size: 256 Bytes
  • Sector size: 4K-Byte (uniform)
  • Block size: 32/64K-Byte (uniform)
  • Minimum Program/Erase Cycles: 100,000
  • Data Retention: 20-year typical
  • Deep power down current: 1μA typical
  • Standby current: 1μA typical

Features:

  • 16M-bit Serial Flash
  • Standard, Dual, Quad SPI
  • High Speed Clock Frequency (120MHz)
  • Software/Hardware Write Protection
  • Minimum 100,000 Program/Erase Cycles
  • 20-year data retention typical
  • Allows XIP (execute in place) Operation
  • Fast Program/Erase Speed
  • Flexible Architecture (Uniform Sector of 4K-Byte, Uniform Block of 32/64K-Byte)
  • Low Power Consumption (1μA typical deep power down/standby current)
  • Advanced Security Features (128-Bit Unique ID, 4x256-Byte security registers with OTP locks, SFDP register)
  • Single Power Supply Voltage (2.7~3.6V)

Applications:

  • null

Package:

  • SOP8 (150mil)
  • SOP8 (208mil)
  • VSOP8 (208mil)
  • DIP8 (300mil)
  • USON8 (3*2mm)
  • USON8 (3*4mm)
  • USON8 (4*4mm)
  • WSON8 (6*5mm)
  • TFBGA-24 (6*4 ball array)

Features

  • ◆ 16M-bit Serial Flash
  • -2048K-Byte
  • -256 Bytes per programmable page
  • ◆ Standard, Dual, Quad SPI
  • -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
  • -Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
  • -Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • ◆ High Speed Clock Frequency
  • -120MHz for fast read with 30PF load
  • -Dual I/O Data transfer up to 240Mbits/s
  • -Quad I/O Data transfer up to 480Mbits/s
  • ◆ Software/Hardware Write Protection -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin -Top/Bottom Block protection
  • ◆ Minimum 100,000 Program/Erase Cycles
  • ◆ Data Retention
  • -20-year data retention typical
  • ◆ Allows XIP (execute in place) Operation
  • -Continuous Read With 8/16/32/64-Byte Wrap
  • ◆ Fast Program/Erase Speed
  • -Page Program time: 0.6ms typical
  • -Sector Erase time: 45ms typical
  • -Block Erase time: 0.15/0.25s typical
  • -Chip Erase time: 7s typical
  • ◆ Flexible Architecture -Uniform Sector of 4K-Byte -Uniform Block of 32/64K-Byte
  • ◆ Low Power Consumption
  • -1μA typical deep power down current
  • -1μA typical standby current
  • ◆ Advanced Security Features -128-Bit Unique ID for each device
  • -4x256-Byte security registers with OTP locks
  • -Discoverable parameters (SFDP) register
  • ◆ Single Power Supply Voltage -Full voltage range:2.7~3.6V
  • ◆ Package Information
  • -SOP8 (150mil)
  • -SOP8 (208mil)
  • -VSOP8 (208mil)
  • -DIP8 (300mil)
  • -USON8 (3*2mm)
  • -USON8 (3*4mm)
  • -USON8 (4*4mm)
  • -WSON8 (6*5mm)
  • -TFBGA-24(6*4 ball array)

Pin Configuration

Pin NameI/ODescription
CS#IChip Select Input
SOI/O(IO1) Data Output (Data Input Output 1)
WP# (IO2)I/OWrite Protect Input (Data Input Output
VSSGround
I/OSI (IO0) Data Input (Data Input Output 0)
SCLKISerial Clock Input
HOLD# (IO3)I/OHold Input (Data Input Output 3)
VCCPower Supply

Note: CS# must be driven high if chip is not selected. Please don't leave CS# floating any time after power is on.

Electrical Characteristics

(T= -40 °C 85 °C , VCC=2.73.6V)

SymbolParameterTest ConditionMin.Typ.Max.Unit.
I LIInput Leakage Current±2μA
I LOOutput Leakage Current±2μA
I CC1Standby CurrentCS#=VCC, V IN =VCC or VSS15μA
I CC2Deep Power-Down CurrentCS#=VCC, V IN =VCC or VSS15μA
I CC3Operating Current (Read)CLK=0.1VCC / 0.9VCC at 120MHz, Q=Open(*1,*2,*4 I/O)1520mA
I CC3Operating Current (Read)CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O)1318mA
I CC4Operating Current (PP)CS#=VCC20mA
I CC5Operating Current (WRSR)CS#=VCC20mA
I CC6Operating Current (SE)CS#=VCC20mA
I CC7Operating Current (BE)CS#=VCC20mA
I CC8Operating Current (CE)CS#=VCC20mA
I CC9High Performance Current0.61.2mA
V ILInput Low Voltage0.2VCCV
V IHInput High Voltage0.7VCCV
V OLOutput Low VoltageI OL =100μA0.2V
V OHOutput High VoltageI OH =-100μAVCC-0.2V
  1. Typical values given for TA=25° C.
  2. Value guaranteed by design and/or characterization, not 100% tested in production.

(T= -40 °C 105 °C , VCC=2.73.6V)

SymbolParameterTest ConditionMin.Typ.Max.Unit.
I LIInput Leakage Current±2μA
I LOOutput Leakage Current±2μA
I CC1Standby CurrentCS#=VCC, V IN =VCC or VSS125μA
I CC2Deep Power-Down CurrentCS#=VCC, V IN =VCC or VSS125μA
I CC3Operating Current (Read)CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1 I/O)1520mA
I CC3Operating Current (Read)CLK=0.1VCC / 0.9VCC at 60MHz, Q=Open(*1,*2,*4 I/O)1318mA
I CC4Operating Current (PP)CS#=VCC25mA
I CC5Operating Current(WRSR)CS#=VCC25mA
I CC6Operating Current (SE)CS#=VCC25mA
I CC7Operating Current (BE)CS#=VCC25mA
I CC8Operating Current (CE)CS#=VCC25mA
I CC9High Performance Current0.61.5mA
V ILInput Low Voltage-0.50.2VCCV
V IHInput High Voltage0.7VCCVCC+0.4V
V OLOutput Low VoltageI OL =100μA0.2V
V OHOutput High VoltageI OH =-100μAVCC-0.2V
  1. Typical values given for TA=25° C.
  2. Value guaranteed by design and/or characterization, not 100% tested in production.

(T= -40 °C 125 °C , VCC=2.73.6V)

SymbolParameterTest ConditionMin.Typ.Max.Unit.
I LIInput Leakage Current±2μA
I LOOutput Leakage Current±2μA
I CC1Standby CurrentCS#=VCC, V IN =VCC or VSS130μA
I CC2Deep Power-Down CurrentCS#=VCC, V IN =VCC or VSS130μA
I CC3Operating Current (Read)CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1 I/O)1520mA
I CC3Operating Current (Read)CLK=0.1VCC / 0.9VCC at 60MHz, Q=Open(*1,*2,*4 I/O)1318mA
I CC4Operating Current (PP)CS#=VCC25mA
I CC5Operating Current(WRSR)CS#=VCC25mA
I CC6Operating Current (SE)CS#=VCC25mA
I CC7Operating Current (BE)CS#=VCC25mA
I CC8Operating Current (CE)CS#=VCC25mA
I CC9High Performance Current0.61.5mA
V ILInput Low Voltage-0.50.2VCCV
V IHInput High Voltage0.7VCCVCC+0.4V
V OLOutput Low VoltageI OL =100μA0.2V
V OHOutput High VoltageI OH =-100μAVCC-0.2V
  1. Typical values given for TA=25° C.
  2. Value guaranteed by design and/or characterization, not 100% tested in production.

Absolute Maximum Ratings

ParameterValueUnit
Ambient Operating Temperature-40 to 85°C
Storage Temperature-40 to 105 -40 to 125 -65 to 150°C
Applied Input / Output Voltage-0.6 to VCC+0.4V
Transient Input / Output Voltage(note: overshoot)-2.0 to VCC+2.0V
VCC-0.6 to 4.2V

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