GD25Q16CEJG

Part: GD25Q16C

Type: Serial NOR Flash Memory

Description: 16M-bit (2048K-Byte) serial NOR flash memory supporting Standard, Dual, and Quad SPI interfaces with clock frequencies up to 120 MHz, offering data transfer rates up to 480 Mbits/s, and featuring low power consumption.

Operating Conditions:

• Supply voltage: 2.7–3.6V
• Clock frequency: 120 MHz (for fast read with 30PF load)
• Dual I/O Data transfer: up to 240 Mbits/s
• Quad I/O Data transfer: up to 480 Mbits/s

Absolute Maximum Ratings:

• Max supply voltage: 4.0V (VCC)
• Max input voltage: VCC+0.3V (for all input pins)
• Max junction/storage temperature: 150 °C (Storage Temperature)

Key Specs:

• Memory size: 16 M-bit (2048 K-Byte)
• Page size: 256 Bytes
• Sector erase time: 45 ms typical
• Page program time: 0.6 ms typical
• Program/Erase cycles: Minimum 100,000
• Data retention: 20-year typical
• Deep power down current: 1 μA typical
• Standby current: 1 μA typical

Features:

• Standard, Dual, Quad SPI interfaces
• Software/Hardware Write Protection
• Top/Bottom Block protection
• Execute in Place (XIP) Operation
• Uniform Sector of 4K-Byte
• Uniform Block of 32/64K-Byte
• 128-Bit Unique ID for each device
• 4x256-Byte security registers with OTP locks
• Discoverable parameters (SFDP) register

Applications:

Package:

• SOP8 (150mil)
• SOP8 (208mil)
• VSOP8 (208mil)
• DIP8 (300mil)
• USON8 (3*2mm)
• USON8 (3*4mm)
• USON8 (4*4mm)
• WSON8 (6*5mm)
• TFBGA-24 (6*4 ball array)

• ◆ 16M-bit Serial Flash
• -2048K-Byte
• -256 Bytes per programmable page
• ◆ Standard, Dual, Quad SPI
• -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
• -Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
• -Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
• ◆ High Speed Clock Frequency
• -120MHz for fast read with 30PF load
• -Dual I/O Data transfer up to 240Mbits/s
• -Quad I/O Data transfer up to 480Mbits/s
• ◆ Software/Hardware Write Protection -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin -Top/Bottom Block protection
• ◆ Minimum 100,000 Program/Erase Cycles
• ◆ Data Retention
• -20-year data retention typical
• ◆ Allows XIP (execute in place) Operation
• -Continuous Read With 8/16/32/64-Byte Wrap
• ◆ Fast Program/Erase Speed
• -Page Program time: 0.6ms typical
• -Sector Erase time: 45ms typical
• -Block Erase time: 0.15/0.25s typical
• -Chip Erase time: 7s typical
• ◆ Flexible Architecture -Uniform Sector of 4K-Byte -Uniform Block of 32/64K-Byte
• ◆ Low Power Consumption
• -1μA typical deep power down current
• -1μA typical standby current
• ◆ Advanced Security Features -128-Bit Unique ID for each device
• -4x256-Byte security registers with OTP locks
• -Discoverable parameters (SFDP) register
• ◆ Single Power Supply Voltage -Full voltage range:2.7~3.6V
• ◆ Package Information
• -SOP8 (150mil)
• -SOP8 (208mil)
• -VSOP8 (208mil)
• -DIP8 (300mil)
• -USON8 (3*2mm)
• -USON8 (3*4mm)
• -USON8 (4*4mm)
• -WSON8 (6*5mm)
• -TFBGA-24(6*4 ball array)

Pin Name	I/O	Description
CS#	I	Chip Select Input
SO	I/O	(IO1) Data Output (Data Input Output 1)
WP# (IO2)	I/O	Write Protect Input (Data Input Output
VSS		Ground
	I/O	SI (IO0) Data Input (Data Input Output 0)
SCLK	I	Serial Clock Input
HOLD# (IO3)	I/O	Hold Input (Data Input Output 3)
VCC		Power Supply

Note: CS# must be driven high if chip is not selected. Please don't leave CS# floating any time after power is on.

(T= -40 °C 85 °C , VCC=2.73.6V)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit.
I LI	Input Leakage Current				±2	μA
I LO	Output Leakage Current				±2	μA
I CC1	Standby Current	CS#=VCC, V IN =VCC or VSS		1	5	μA
I CC2	Deep Power-Down Current	CS#=VCC, V IN =VCC or VSS		1	5	μA
I CC3	Operating Current (Read)	CLK=0.1VCC / 0.9VCC at 120MHz, Q=Open(*1,*2,*4 I/O)		15	20	mA
I CC3	Operating Current (Read)	CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O)		13	18	mA
I CC4	Operating Current (PP)	CS#=VCC			20	mA
I CC5	Operating Current (WRSR)	CS#=VCC			20	mA
I CC6	Operating Current (SE)	CS#=VCC			20	mA
I CC7	Operating Current (BE)	CS#=VCC			20	mA
I CC8	Operating Current (CE)	CS#=VCC			20	mA
I CC9	High Performance Current			0.6	1.2	mA
V IL	Input Low Voltage				0.2VCC	V
V IH	Input High Voltage		0.7VCC			V
V OL	Output Low Voltage	I OL =100μA			0.2	V
V OH	Output High Voltage	I OH =-100μA	VCC-0.2			V

1. Typical values given for TA=25° C.
2. Value guaranteed by design and/or characterization, not 100% tested in production.

(T= -40 °C 105 °C , VCC=2.73.6V)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit.
I LI	Input Leakage Current				±2	μA
I LO	Output Leakage Current				±2	μA
I CC1	Standby Current	CS#=VCC, V IN =VCC or VSS		1	25	μA
I CC2	Deep Power-Down Current	CS#=VCC, V IN =VCC or VSS		1	25	μA
I CC3	Operating Current (Read)	CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1 I/O)		15	20	mA
I CC3	Operating Current (Read)	CLK=0.1VCC / 0.9VCC at 60MHz, Q=Open(*1,*2,*4 I/O)		13	18	mA
I CC4	Operating Current (PP)	CS#=VCC			25	mA
I CC5	Operating Current(WRSR)	CS#=VCC			25	mA
I CC6	Operating Current (SE)	CS#=VCC			25	mA
I CC7	Operating Current (BE)	CS#=VCC			25	mA
I CC8	Operating Current (CE)	CS#=VCC			25	mA
I CC9	High Performance Current			0.6	1.5	mA
V IL	Input Low Voltage		-0.5		0.2VCC	V
V IH	Input High Voltage		0.7VCC		VCC+0.4	V
V OL	Output Low Voltage	I OL =100μA			0.2	V
V OH	Output High Voltage	I OH =-100μA	VCC-0.2			V

1. Typical values given for TA=25° C.
2. Value guaranteed by design and/or characterization, not 100% tested in production.

(T= -40 °C 125 °C , VCC=2.73.6V)

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit.
I LI	Input Leakage Current				±2	μA
I LO	Output Leakage Current				±2	μA
I CC1	Standby Current	CS#=VCC, V IN =VCC or VSS		1	30	μA
I CC2	Deep Power-Down Current	CS#=VCC, V IN =VCC or VSS		1	30	μA
I CC3	Operating Current (Read)	CLK=0.1VCC / 0.9VCC at 80MHz, Q=Open(*1 I/O)		15	20	mA
I CC3	Operating Current (Read)	CLK=0.1VCC / 0.9VCC at 60MHz, Q=Open(*1,*2,*4 I/O)		13	18	mA
I CC4	Operating Current (PP)	CS#=VCC			25	mA
I CC5	Operating Current(WRSR)	CS#=VCC			25	mA
I CC6	Operating Current (SE)	CS#=VCC			25	mA
I CC7	Operating Current (BE)	CS#=VCC			25	mA
I CC8	Operating Current (CE)	CS#=VCC			25	mA
I CC9	High Performance Current			0.6	1.5	mA
V IL	Input Low Voltage		-0.5		0.2VCC	V
V IH	Input High Voltage		0.7VCC		VCC+0.4	V
V OL	Output Low Voltage	I OL =100μA			0.2	V
V OH	Output High Voltage	I OH =-100μA	VCC-0.2			V

1. Typical values given for TA=25° C.
2. Value guaranteed by design and/or characterization, not 100% tested in production.

Parameter	Value	Unit
Ambient Operating Temperature	-40 to 85	°C
Storage Temperature	-40 to 105 -40 to 125 -65 to 150	°C
Applied Input / Output Voltage	-0.6 to VCC+0.4	V
Transient Input / Output Voltage(note: overshoot)	-2.0 to VCC+2.0	V
VCC	-0.6 to 4.2	V