CY8C4146AXI-S453

Please note that Cypress is an Infineon Technologies Company.

Manufacturer

now Infineon

Overview

Part: PSoC 4100S Plus from Cypress (now Infineon)

Type: Programmable System-on-Chip (PSoC) with Arm Cortex-M0+ CPU

Key Specs:

  • CPU: 48-MHz Arm Cortex-M0+
  • Flash: Up to 128 KB
  • SRAM: Up to 16 KB
  • SAR ADC: 12-bit 1-Msps
  • Operating Voltage: 1.71-V to 5.5-V
  • Deep Sleep Digital System Current: 2.5-μA
  • CapSense SNR: >5:1
  • External Crystal Oscillator: 4 to 33 MHz
  • PLL Frequency: 48-MHz
  • Watch Crystal Oscillator: 32-kHz
  • Internal Main Oscillator Accuracy: ±2%
  • Internal Low-power Oscillator: 32-kHz
  • Programmable GPIO Pins: Up to 54

Features:

  • 32-bit MCU Subsystem with 48-MHz Arm Cortex-M0+ CPU, up to 128 KB flash, up to

Features

32-bit MCU Subsystem

  • 48-MHz Arm Cortex-M0+ CPU with single-cycle multiply
  • Up to 128 KB of flash with Read Accelerator
  • Up to 16 KB of SRAM
  • 8-channel DMA engine

Programmable Analog

  • Two opamps with reconfigurable high-drive external and high-bandwidth internal drive and Comparator modes and ADC input buffering capability. Opamps can operate in Deep Sleep low-power mode.
  • 12-bit 1-Msps SAR ADC with differential and single-ended modes, and Channel Sequencer with signal averaging
  • Single-slope 10-bit ADC function provided by a capacitance sensing block
  • Two current DACs (IDACs) for general-purpose or capacitive sensing applications on any pin
  • Two low-power comparators that operate in Deep Sleep low-power mode

Programmable Digital

■ Programmable logic blocks allowing Boolean operations to be performed on port inputs and outputs

Low-Power 1.71-V to 5.5-V Operation

■ Deep Sleep mode with operational analog and 2.5-μA digital system current

Capacitive Sensing

  • Cypress CapSense Sigma-Delta (CSD) provides best-in-class signal-to-noise ratio (SNR) (>5:1) and water tolerance
  • Cypress-supplied software component makes capacitive sensing design easy
  • Automatic hardware tuning (SmartSense™)

LCD Drive Capability

■ LCD segment drive capability on GPIOs

Serial Communication

■ Five independent run-time reconfigurable Serial Communication Blocks (SCBs) with re-configurable I2C, SPI, or UART functionality

Timing and Pulse-Width Modulation

  • Eight 16-bit timer/counter/pulse-width modulator (TCPWM) blocks
  • Center-aligned, Edge, and Pseudo-random modes
  • Comparator-based triggering of Kill signals for motor drive and other high-reliability digital logic applications
  • Quadrature decoder

Clock Sources

  • 4 to 33 MHz external crystal oscillator (ECO)
  • PLL to generate 48-MHz frequency
  • 32-kHz Watch Crystal Oscillator (WCO)
  • ±2% Internal Main Oscillator (IMO)
  • 32-kHz Internal Low-power Oscillator (ILO)

True Random Number Generator (TRNG)

■ TRNG generates truly random number for secure key generation for Cryptography applications

CAN Block

■ CAN 2.0B block with support for Time-Triggered CAN (TTCAN)

Up to 54 Programmable GPIO Pins

  • 44-pin TQFP (0.8-mm pitch), 48-pin TQFP (0.5-mm pitch), and 64-pin TQFP normal (0.8 mm) and Fine Pitch (0.5 mm) packages
  • Any GPIO pin can be CapSense, analog, or digital
  • Drive modes, strengths, and slew rates are programmable

ModusToolbox™ Software

  • Comprehensive collection of multi-platform tools and software libraries
  • Includes board support packages (BSPs), peripheral driver library (PDL), and middleware such as CapSense

PSoC Creator Design Environment

  • Integrated development environment (IDE) provides schematic design entry and build, with analog and digital automatic routing
  • Application programming interface (API) Components for all fixed-function and programmable peripherals

Industry-Standard Tool Compatibility

■ After schematic entry, development can be done with Arm-based industry-standard development tools

Pin Configuration

Each Port pin has can be assigned to one of multiple functions; it can, for example, be an analog I/O, a digital peripheral function, an LCD pin, or a CapSense pin. The pin assignments are shown in the following table.

Po
/
P
in
t
r
An
log
a
Sm
I
/
O
t
ar
A
C
T
#
0
A
C
T
#
1
A
C
T
#
3
D
S
#
2
D
S
#
3
P
0.
0
lp
in_
[
0
]
co
mp
p
tcp
tr_
in
[
0
]
wm
b
[
2
].
t_
ts:
0
sc
ua
r
c
b
[
2
].
i
2c
l:
0
sc
sc
_
b
[
0
].
i_
lec
t
1:
0
sc
sp
se
P
0.
1
lp
in_
[
0
]
co
mp
n
tcp
tr_
in
[
1
]
wm
b
[
2
].
t_
ts:
0
sc
ua
r
r
b
[
2
].
i
2c
da
0
sc
s
:
_
b
[
0
].
i_
lec
t
2:
0
sc
sp
se
P
0.
2
lp
in_
[
1
]
co
mp
p
b
[
0
].
i_
lec
3:
0
t
sc
sp
se
P
0.
3
lp
in_
[
1
]
co
mp
n
b
[
2
].
i_
lec
0:
1
t
sc
sp
se
P
0.
4
in
wc
o.w
co
_
b
[
1
].
t_
0
sc
ua
r
rx:
b
[
2
].
t_
0
sc
ua
r
rx:
b
[
1
].
i
2c
l:
0
sc
sc
_
b
[
1
].
i_
i:
1
sc
sp
mo
s
P
0.
5
t
wc
o.w
co
ou
_
b
[
1
].
t_
tx:
0
sc
ua
r
b
[
2
].
t_
tx:
0
sc
ua
r
b
[
1
].
i
2c
da
0
sc
s
:
_
b
[
1
].
i_
iso
1
sc
sp
m
:
P
0.
6
in
ex
co
.ec
o_
l
k:
0
t_
srs
s.e
x
c
b
[
1
].
0
t_
ts:
sc
ua
r
c
b
[
2
].
1
t_
tx:
sc
ua
r
b
[
1
].
i_
l
k:
1
sc
sp
c
P
0.
7
t
ex
co
.ec
o_
ou
l
ine
[
0
]
3
tcp
wm
:
b
[
1
].
0
t_
ts:
sc
ua
r
r
b
[
1
].
i_
lec
0:
1
t
sc
sp
se
P
5.
0
tcp
l
ine
[
4
]
2
wm
:
b
[
2
].
t_
1
sc
ua
r
rx:
b
[
2
].
i
2c
l:
1
sc
sc
_
b
[
2
].
i_
i:
0
sc
sp
mo
s
P
5.
1
tcp
l
ine
l
[
4
]
2
wm
co
mp
:
_
b
[
2
].
t_
tx:
2
sc
ua
r
b
[
2
].
i
2c
da
1
sc
s
:
_
b
[
2
].
i_
iso
0
sc
sp
m
:
P
2
5.
l
ine
[
]
2
tcp
5
wm
:
b
[
2
].
1
t_
ts:
sc
ua
r
c
lp
[
0
]
2
co
mp
.co
mp
:
b
[
2
].
i_
l
k:
0
sc
sp
c
P
5.
3
tcp
l
ine
l
[
5
]
2
wm
co
mp
:
_
b
[
2
].
t_
ts:
1
sc
ua
r
r
lp
[
1
]
0
co
mp
.co
mp
:
b
[
2
].
i_
lec
t
0:
0
sc
sp
se
P
5.
4
tcp
l
ine
[
6
]
2
wm
:
b
[
2
].
i_
lec
t
1:
0
sc
sp
se
P
5.
5
tcp
l
ine
l
[
6
]
2
wm
co
mp
:
_
b
[
2
].
i_
lec
t
2:
0
sc
sp
se
P
1.
0
b
0_
0+
t
c
oa
Sm
Io
[
2
].
io
[
0
]
t
ar
l
ine
[
2
]
1
tcp
wm
:
b
[
0
].
1
t_
sc
ua
r
rx:
b
[
0
].
i
2c
l:
0
sc
sc
_
b
[
0
].
i_
i:
1
sc
sp
mo
s
P
1.
1
b
0_
0-
t
c
oa
Sm
Io
[
2
].
io
[
1
]
t
ar
l
ine
l
[
2
]
1
tcp
wm
co
mp
:
_
b
[
0
].
1
t_
tx:
sc
ua
r
b
[
0
].
i
2c
da
0
sc
s
:
_
b
[
0
].
i_
iso
1
sc
sp
m
:
P
1.
2
t
b
0_
0_
t
c
oa
ou
Sm
t
Io
[
2
].
io
[
2
]
ar
tcp
l
ine
[
3
]
1
wm
:
b
[
0
].
t_
ts:
1
sc
ua
r
c
tcp
tr_
in
[
2
]
wm
b
[
2
].
i
2c
l:
2
sc
sc
_
b
[
0
].
i_
l
k:
1
sc
sp
c
P
1.
3
t
b
0_
1_
t
c
oa
ou
Sm
t
Io
[
2
].
io
[
3
]
ar
tcp
l
ine
l
[
3
]
1
wm
co
mp
:
_
b
[
0
].
t_
ts:
1
sc
ua
r
r
tcp
tr_
in
[
3
]
wm
b
[
2
].
i
2c
da
2
sc
s
:
_
b
[
0
].
i_
lec
t
0:
1
sc
sp
se
P
1.
4
t
b
0_
1-
c
oa
Sm
t
Io
[
2
].
io
[
4
]
ar
tcp
l
ine
[
6
]
1
wm
:
b
[
3
].
i
2c
l:
0
sc
sc
_
b
[
0
].
i_
lec
t
1:
1
sc
sp
se
P
1.
5
t
b
0_
1+
c
oa
Sm
t
Io
[
2
].
io
[
5
]
ar
tcp
l
ine
l
[
6
]
1
wm
co
mp
:
_
b
[
3
].
i
2c
da
0
sc
s
:
_
b
[
0
].
i_
lec
t
2:
1
sc
sp
se
P
1.
6
b
0_
0+
t
c
oa
Sm
Io
[
2
].
io
[
6
]
t
ar
l
ine
[
]
1
tcp
7
wm
:
b
[
0
].
i_
lec
3:
1
t
sc
sp
se
P
1.
7
t
b
0_
1+
c
oa
f
0
t_
sa
r_
ex
vre
t_
f
1
sa
r_
ex
vre
Sm
t
Io
[
2
].
io
[
7
]
ar
tcp
l
ine
l
[
7
]
1
wm
co
mp
:
_
b
[
2
].
i_
l
k:
1
sc
sp
c
P
2.
0
[
0
]
sa
rm
ux
Sm
Io
[
0
].
io
[
0
]
t
ar
l
ine
[
4
]
0
tcp
wm
:
d.c
cs
om
p
in
[
4
]
tcp
tr_
wm
b
[
1
].
i
2c
l:
1
sc
sc
_
b
[
1
].
i_
i:
2
sc
sp
mo
s
P
2.
1
[
1
]
sa
rm
ux
Sm
t
Io
[
0
].
io
[
1
]
ar
tcp
l
ine
l
[
4
]
0
wm
co
mp
:
_
tcp
tr_
in
[
5
]
wm
b
[
1
].
i
2c
da
1
sc
s
:
_
b
[
1
].
i_
iso
2
sc
sp
m
:
P
2.
2
[
2
]
sa
rm
ux
Sm
t
Io
[
0
].
io
[
2
]
ar
tcp
l
ine
[
5
]
1
wm
:
b
[
1
].
i_
l
k:
2
sc
sp
c
P
2.
3
[
3
]
sa
rm
ux
Sm
Io
[
0
].
io
[
3
]
t
ar
l
ine
l
[
]
1
tcp
5
wm
co
mp
:
_
b
[
1
].
i_
lec
0:
2
t
sc
sp
se

Po
t
/
P
in
r
An
log
a
Sm
t
I
/
O
ar
A
C
T
#
0
A
C
T
#
1
A
C
T
#
3
D
S
#
2
D
S
#
3
P
2.
4
[
4
]
sa
rm
ux
Sm
t
Io
[
0
].
io
[
4
]
ar
tcp
l
ine
[
0
]
1
wm
:
b
[
3
].
t_
1
sc
ua
r
rx:
b
[
1
].
i_
lec
t
1:
1
sc
sp
se
2.
P
5
[
5
]
sa
rm
ux
Sm
0
t
Io
[
].
io
[
5
]
ar
0
1
tcp
l
ine
l
[
]
wm
co
mp
:
_
3
1
b
[
].
t_
tx:
sc
ua
r
1
2:
1
b
[
].
i_
lec
t
sc
sp
se
P
2.
6
[
6
]
sa
rm
ux
Sm
Io
[
0
].
io
[
6
]
t
ar
l
ine
[
1
]
1
tcp
wm
:
b
[
3
].
1
t_
ts:
sc
ua
r
c
b
[
1
].
i_
lec
3:
1
t
sc
sp
se
P
2.
7
[
]
7
sa
rm
ux
Sm
Io
[
0
].
io
[
]
t
7
ar
l
ine
l
[
1
]
1
tcp
wm
co
mp
:
_
b
[
3
].
1
t_
ts:
sc
ua
r
r
lp
[
0
]
0
co
mp
.co
mp
:
b
[
2
].
i_
i:
1
sc
sp
mo
s
6.
0
P
1
tcp
l
ine
[
4
]
wm
:
3
0
b
[
].
t_
sc
ua
r
rx:
0
tx_
b_
ca
n.c
an
en
n:
_
3
2c
1
b
[
].
i
l:
sc
sc
_
3
0
b
[
].
i_
i:
sc
sp
mo
s
P
6.
1
l
ine
l
[
4
]
1
tcp
wm
co
mp
:
_
b
[
3
].
0
t_
tx:
sc
ua
r
0
ca
n.c
an
rx:
_
b
[
3
].
i
2c
da
1
sc
s
:
_
b
[
3
].
i_
iso
0
sc
sp
m
:
P
6.
2
tcp
l
ine
[
5
]
0
wm
:
b
[
3
].
t_
ts:
0
sc
ua
r
c
tx:
0
ca
n.c
an
_
b
[
3
].
i_
l
k:
0
sc
sp
c
P
6.
3
tcp
l
ine
l
[
5
]
0
wm
co
mp
:
_
b
[
3
].
t_
ts:
0
sc
ua
r
r
b
[
3
].
i_
lec
t
0:
0
sc
sp
se
P
6.
4
l
ine
[
6
]
0
tcp
wm
:
b
[
4
].
i
2c
l
sc
sc
_
b
[
3
].
i_
lec
1:
0
t
sc
sp
se
P
6.
5
tcp
l
ine
l
[
6
]
0
wm
co
mp
:
_
b
[
4
].
i
2c
da
sc
s
_
b
[
3
].
i_
lec
t
2:
0
sc
sp
se
P
3.
0
Sm
t
Io
[
1
].
io
[
0
]
ar
tcp
l
ine
[
0
]
0
wm
:
b
[
1
].
t_
1
sc
ua
r
rx:
b
[
1
].
i
2c
l:
2
sc
sc
_
b
[
1
].
i_
i:
0
sc
sp
mo
s
P
3.
1
Sm
t
Io
[
1
].
io
[
1
]
ar
tcp
l
ine
l
[
0
]
0
wm
co
mp
:
_
b
[
1
].
t_
tx:
1
sc
ua
r
b
[
1
].
i
2c
da
2
sc
s
:
_
b
[
1
].
i_
iso
0
sc
sp
m
:
P
3.
2
Sm
Io
[
1
].
io
[
2
]
t
ar
l
ine
[
1
]
0
tcp
wm
:
b
[
1
].
1
t_
ts:
sc
ua
r
c
d_
da
ta
cp
us
s.s
w
b
[
1
].
i_
l
k:
0
sc
sp
c
P
3.
3
Sm
t
Io
[
1
].
io
[
3
]
ar
tcp
l
ine
l
[
1
]
0
wm
co
mp
:
_
b
[
1
].
t_
ts:
1
sc
ua
r
r
d_
l
k
cp
us
s.s
w
c
b
[
1
].
i_
lec
t
0:
0
sc
sp
se
P
3.
4
Sm
t
Io
[
1
].
io
[
4
]
ar
tcp
l
ine
[
2
]
0
wm
:
tcp
tr_
in
[
6
]
wm
b
[
1
].
i_
lec
t
1:
0
sc
sp
se
3.
P
5
Sm
1
t
Io
[
].
io
[
5
]
ar
2
0
tcp
l
ine
l
[
]
wm
co
mp
:
_
1
2:
0
b
[
].
i_
lec
t
sc
sp
se
P
3.
6
Sm
Io
[
1
].
io
[
6
]
t
ar
l
ine
[
3
]
0
tcp
wm
:
b
[
4
].
i_
lec
3
t
sc
sp
se
b
[
1
].
i_
lec
3:
0
t
sc
sp
se
P
3.
7
Sm
t
Io
[
1
].
io
[
7
]
ar
tcp
l
ine
l
[
3
]
0
wm
co
mp
:
_
lp
[
1
]
1
co
mp
.co
mp
:
b
[
2
].
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Electrical Characteristics

Absolute Maximum Ratings

Table 1. Absolute Maximum Ratings[1]

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/
Conditions
SID1VDDD_ABSDigital supply relative to VSS–0.56
SID2VCCD_ABSDirect digital core voltage input relative
to VSS
–0.51.95V
SID3VGPIO_ABSGPIO voltage–0.5VDD+0.5
SID4IGPIO_ABSMaximum current per GPIO–2525mA
SID5IGPIO_injectionGPIO injection current, Max for VIH >
VDDD, and Min for VIL < VSS
–0.50.5mACurrent injected
per pin
BID44ESD_HBMElectrostatic discharge human body
model
2200V
BID45ESD_CDMElectrostatic discharge charged device
model
500V
BID46LUPin current for latch-up–140140mA

Device Level Specifications

All specifications are valid for –40 °C TA 105 °C and TJ 125 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except where noted.

Table 2. DC Specifications

Typical values measured at VDD = 3.3 V and 25 °C.

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/
Conditions
SID53VDDPower supply input voltage1.85.5Internally
regulated supply
SID255VDDPower supply input voltage (VCCD =
VDDD = VDDA)
1.711.89VInternally
unregulated
supply
SID54VCCDOutput voltage (for core logic)1.8
SID55CEFCExternal regulator voltage (VCCD)
bypass
0.1X5R ceramic or
better
SID56CEXCPower supply bypass capacitor1μFX5R ceramic or
better
Active Mode, VDD = 1.8 V to 5.5 V. Typical values measured at VDD = 3.3 V and 25 °C.
SID10IDD5Execute from flash; CPU at 6 MHz1.82.4mA
SID16IDD8Execute from flash; CPU at 24 MHz3.04.6mA
SID19IDD11Execute from flash; CPU at 48 MHz5.47.1mA
Sleep Mode, VDDD = 1.8 V to 5.5 V (Regulator on)
SID22IDD17I²C wakeup WDT, and Comparators on1.11.8mA6 MHZ
SID25IDD20I²C wakeup, WDT, and Comparators on1.52.1mA12 MHZ
Sleep Mode, VDDD = 1.71 V to 1.89 V (Regulator bypassed)

1. Usage above the absolute maximum conditions listed in Table 1 may cause permanent damage to the device. Exposure to Absolute Maximum conditions for extended periods of time may affect device reliability. The Maximum Storage Temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature Storage Life. When used below Absolute Maximum conditions but above normal operating conditions, the device may not operate to specification.

Table 2. DC Specifications (continued)

Typical values measured at VDD = 3.3 V and 25 °C.

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID1VDD_ABSDigital supply relative to VSS–0.56V
SID2VCCD_ABSDirect digital core voltage input relative to VSS–0.51.95V
SID3VGPIO_ABSGPIO voltage–0.5VDD+0.5V
SID4IGPIO_ABSMaximum current per GPIO–2525mA

Table 3. AC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID48FCPUCPU frequencyDC48MHz1.71 ≤ VDD ≤ 5.5
SID49[2]TSLEEPWakeup from Sleep mode0μs
SID50[2]TDEEPSLEEPWakeup from Deep Sleep mode35μs

GPIO

Table 4. GPIO DC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID57VIH[3]Input voltage high threshold0.7  VDDDCMOS Input
SID58VILInput voltage low threshold0.3 
VDDD
CMOS Input
SID241VIH[3]LVTTL input, VDDD < 2.7 V0.7  VDDD
SID242VILLVTTL input, VDDD < 2.7 V0.3 
VDDD
SID243VIH[3] 2.7 V
LVTTL input, VDDD
2.0
SID244VIL 2.7 V
LVTTL input, VDDD
0.8V
SID59VOHOutput voltage high levelVDDD –0.6IOH = 4 mA at 3 V VDDD
SID60VOHOutput voltage high levelVDDD –0.5IOH = 1 mA at 1.8 V
VDDD
SID61VOLOutput voltage low level0.6IOL = 4 mA at 1.8 V VDDD
SID62VOLOutput voltage low level0.6IOL = 10 mA at 3 V VDDD
SID62AVOLOutput voltage low level0.4IOL = 3 mA at 3 V VDDD
SID63RPULLUPPull-up resistor3.55.68.5
SID64RPULLDOWNPull-down resistor3.55.68.5
SID65IILInput leakage current (absolute
value)
2nA25 °C, VDDD = 3.0 V
SID66CINInput capacitance7pF
SID67[4]VHYSTTLInput hysteresis LVTTL2540VDDD
 2.7 V
SID68[4]VHYSCMOSInput hysteresis CMOS0.05 × VDDDmVVDD < 4.5 V
SID68A[4]VHYSCMOS5V5Input hysteresis CMOS200VDD > 4.5 V
SID69[4]IDIODECurrent through protection diode to
VDD/VSS
100μA
SID69A[4]ITOT_GPIOMaximum total source or sink chip
current
200mA

Table 5. GPIO AC Specifications

(Guaranteed by Characterization)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID28IDD23I²C wakeup, WDT, and Comparators on1.11.8mA6 MHZ
SID28AIDD23AI²C wakeup, WDT, and Comparators on1.52.1mA12 MHZ
SID30IDD25I²C wakeup and WDT on; T = –40 °C to 60 °C2.540µAT = –40 °C to 60 °C
SID31IDD26I²C wakeup and WDT on2.5125µAMax is at 3.6 V and 85 °C
SID33IDD28I²C wakeup and WDT on; T = –40 °C to 60 °C2.540µAT = –40 °C to 60 °C
SID34IDD29I²C wakeup and WDT on2.5125µAMax is at 5.5 V and 85 °C
SID36IDD31I²C wakeup and WDT on; T = –40 °C to 60 °C2.560µAT = –40 °C to 60 °C
SID37IDD32I²C wakeup and WDT on2.5180µAMax is at 1.89 V and 85 °C
SID307IDD_XRSupply current while XRES asserted25mA
Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID48FCPUCPU frequencyDC48MHz1.71 ≤ VDD ≤ 5.5
SID49[2]TSLEEPWakeup from Sleep mode0µs
SID50[2]TDEEPSLEEPWakeup from Deep Sleep mode35µs

Notes

3. VIH must not exceed VDDD + 0.2 V.

4. Guaranteed by characterization.

Table 5. GPIO AC Specifications (continued)

(Guaranteed by Characterization)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID70TRISEFRise time in fast strong mode212ns3.3 V VDDD, Cload = 25 pF
SID71TFALLFFall time in fast strong mode212ns3.3 V VDDD, Cload = 25 pF
SID72TRISESRise time in slow strong mode1060ns3.3 V VDDD, Cload

XRES

Table 6. XRES DC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID57V_IH[3]Input voltage high threshold0.7 × V_DDDVCMOS Input
SID58V_ILInput voltage low threshold0.3 × V_DDDVCMOS Input
SID241V_IH[3]LVTTL input, V_DDD < 2.7 V0.7 × V_DDDV
SID242V_ILLVTTL input, V_DDD < 2.7 V0.3 × V_DDDV
SID243V_IH[3]LVTTL input, V_DDD ≥ 2.7 V2.0V
SID244V_ILLVTTL input, V_DDD ≥ 2.7 V0.8V
SID59V_OHOutput voltage high levelV_DDD – 0.6VI_OH =

Table 7. XRES AC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID83[5]TRESETWIDTHReset pulse width1μs
BID194[5]TRESETWAKEWake-up time from reset release2.7ms

Analog Peripherals

CTBm Opamp

Table 8. CTBm Opamp Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
IDDOpamp block current, External load
SID269IDD_HIpower = hi11001850μA
SID270IDD_MEDpower = med550950
SID271IDD_LOW
GBW
power = lo
Load = 20 pF, 0.1 mA
VDDA = 2.7 V
150350
SID272GBW_HIpower = hi6Input and output are 0.2 V to
VDDA-0.2 V
SID273GBW_MEDpower = med3MHzInput and output are 0.2 V to
VDDA-0.2 V
SID274GBW_LO
IOUT_MAX
power = lo
VDDA = 2.7 V, 500 mV from rail
1Input and output are 0.2 V to
VDDA-0.2 V
SID275IOUT_MAX_HIpower = hi10Output is 0.5 V to VDDA
-0.5 V
SID276IOUT_MAX_MIDpower = med10mAOutput is 0.5 V to VDDA
-0.5 V
SID277IOUT_MAX_LO
IOUT
power = lo
VDDA = 1.71 V, 500 mV from rail
5Output is 0.5 V to VDDA
-0.5 V
SID278IOUT_MAX_HIpower = hi4Output is 0.5 V to VDDA
-0.5 V
SID279IOUT_MAX_MIDpower = med4mAOutput is 0.5 V to
VDDA-0.5 V
SID280IOUT_MAX_LO
IDD_Int
power = lo
Opamp block current Internal Load
2Output is 0.5 V to
VDDA-0.5 V
SID269_IIDD_HI_Intpower = hi15001700
SID270_IIDD_MED_Intpower = med700900μA
IDD_LOW_Intpower = lo
SID271_IGBWVDDA = 2.7 V
SID272_IGBW_HI_Intpower = hi
General opamp specs for both internal
and external modes
8MHzOutput is 0.25 V to
VDDA-0.25 V
SID281VINCharge-pump on, VDDA = 2.7 V–0.05VDDA-0.
2
SID282VCM
VOUT
Charge-pump on, VDDA = 2.7 V
VDDA = 2.7 V
–0.05VDDA-0.
2
V
Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID283VOUT_1power=hi, Iload=10 mA0.5VDDA
-0.5
SID284VOUT_2power=hi, Iload=1 mA0.2VDDA
-0.2
SID285VOUT_3power=med, Iload=1 mA0.2VDDA
-0.2
V
SID286VOUT_4power=lo, Iload=0.1 mA0.2VDDA
-0.2
SID288VOS_TROffset voltage, trimmed–1.00.51.0High mode, input 0 V to
VDDA-0.2 V
SID288AVOS_TROffset voltage, trimmed1mVMedium mode, input 0 V to
VDDA-0.2 V
SID288BVOS_TROffset voltage, trimmed2Low mode, input 0 V to
VDDA-0.2 V
SID290VOS_DR_TROffset voltage drift, trimmed–10310μV/°CHigh mode
SID290AVOS_DR_TROffset voltage drift, trimmed10Medium mode
SID290BVOS_DR_TROffset voltage drift, trimmed10μV/°CLow mode
SID291CMRRDC7080Input is 0 V to VDDA-0.2 V,
Output is 0.2 V to
VDDA-0.2 V
SID292PSRR
Noise
At 1 kHz, 10-mV ripple7085dBVDDD = 3.6 V, high-power
mode, input is 0.2 V to
VDDA-0.2 V
SID294VN2Input-referred, 1 kHz, power = Hi72Input and output are at
0.2 V to VDDA-0.2 V
SID295VN3Input-referred, 10 kHz, power = Hi28nV/rtHzInput and output are at
0.2 V to VDDA-0.2 V
SID296VN4Input-referred, 100 kHz, power = Hi15Input and output are at
0.2 V to VDDA-0.2 V
SID297CLOADStable up to max. load. Performance
specs at 50 pF.
125pF
SID298SLEW_RATECload = 50 pF, Power = High,
VDDA = 2.7 V
6V/μs
SID299T_OP_WAKEFrom disable to enable, no external RC
dominating
25μs
SID299AOL_GAIN
COMP_MODE
Open Loop Gain
Comparator mode; 50 mV drive,
Trise=Tfall (approx.)
90dB
SID300TPD1Response time; power = hi150Input is 0.2 V to
VDDA-0.2 V
SID301TPD2Response time; power = med500nsInput is 0.2 V to
VDDA-0.2 V
SID302TPD3Response time; power = lo2500Input is 0.2 V to
VDDA-0.2 V
SID303VHYST_OPHysteresis10mV
SID304WUP_CTBWake-up time from Enabled to Usable25μs

Table 8. CTBm Opamp Specifications (continued)

Table 8. CTBm Opamp Specifications (continued)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
IDDOpamp block current, External load
SID269IDD_HIpower = hi11001850µA
SID270IDD_MEDpower = med550950µA
SID271IDD_LOWpower = lo150350µA
GBWLoad = 20 pF, 0.1 mA VDDA = 2.7 V
SID272GBW_HIpower = hi6MHzInput and output are 0.2 V to VDDA-0.2 V
SID273GBW_MEDpower = med3MHzInput and output are 0.2 V to VDDA-0.2 V
SID274GBW_LOpower = lo1MHzInput and output are 0.2 V to VDDA-0.2 V
IOUT_MAXVDDA = 2.7 V, 500 mV from rail
SID275IOUT_MAX_HIpower = hi10mAOutput is 0.5 V to VDDA -0.5 V
SID276IOUT_MAX_MIDpower = med10mAOutput is 0.5 V to VDDA -0.5 V
SID277IOUT_MAX_LOpower = lo5mAOutput is 0.5 V to VDDA -0.5 V
IOUTVDDA = 1.71 V, 500 mV from rail
SID278IOUT_MAX_HIpower = hi4mAOutput is 0.5 V to VDDA -0.5 V
SID279IOUT_MAX_MIDpower = med4mAOutput is 0.5 V to VDDA -0.5 V
SID280IOUT_MAX_LOpower = lo2mAOutput is 0.5 V to VDDA -0.5 V
IDD_IntOpamp block current Internal Load
SID269_IIDD_HI_Intpower = hi15001700µA
SID270_IIDD_MED_Intpower = med700900µA
SID271_IIDD_LOW_Intpower = loµA
GBWVDDA = 2.7 V
SID272_IGBW_HI_Intpower = hi8MHzOutput is 0.25 V to VDDA-0.25 V
General opamp specs for both internal and external modes
SID281VINCharge-pump on, VDDA = 2.7 V-0.05VDDA-0.2V
SID282VCMCharge-pump on, VDDA = 2.7 V-0.05VDDA-0.2V
VOUTVDDA = 2.7 V

Comparator

Table 9. Comparator DC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
IDDOpamp block current, External load
SID269IDD_HIpower = hi-11001850µA-
SID270IDD_MEDpower = med-550950µA-
SID271IDD_LOWpower = lo-150350µA-
GBWLoad = 20 pF, 0.1 mA VDDA = 2.7 V
SID272GBW_HIpower = hi6--MHzInput and output are 0.2 V to VDDA-0.2 V
SID273GBW_MEDpower = med3--MHzInput and output are 0.2 V to VDDA-0.2 V
SID274GBW_LOpower = lo-1-MHzInput and output are 0.2 V to VDDA-0.2 V
IOUT_MAXVDDA = 2.7 V, 500 mV from rail
SID275IOUT_MAX_HIpower = hi10--mAOutput is 0.5 V to VDDA-0.5 V
SID276IOUT_MAX_MIDpower = med10

Table 10. Comparator AC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
IDDOpamp block current, External load
SID269IDD_HIpower = hi11001850μA
SID270IDD_MEDpower = med550950μA
SID271IDD_LOWpower = lo150350μA
GBWLoad = 20 pF, 0.1 mA VDDA = 2.7 V
SID272GBW_HIpower = hi6MHzInput and output are 0.2 V to VDDA-0.2 V
SID273GBW_MEDpower = med3MHzInput and output are 0.2 V to VDDA-0.2 V
SID274GBW_LOpower = lo1MHzInput and output are 0.2 V to VDDA-0.2 V
IOUT_MAXVDDA = 2.7 V, 500 mV from rail
SID275IOUT_MAX_HIpower = hi10mAOutput is 0.5 V to VDDA -0.5 V
SID276IOUT_MAX_MIDpower = med10mAOutput is 0.5 V to VDDA -0.5 V
SID277IOUT_MAX_LOpower = lo5mAOutput is 0.5 V to VDDA -0.5 V
IOUTVDDA = 1.71 V, 500 mV from rail
SID278IOUT_MAX_HIpower = hi4mAOutput is 0.5 V to VDDA -0.5 V
SID279IOUT_MAX_MIDpower = med4mAOutput is 0.5 V to VDDA -0.5 V
SID280IOUT_MAX_LOpower = lo2mAOutput is 0.5 V to VDDA -0.5 V
IDD_IntOpamp block current Internal Load
SID269_IIDD_HI_Intpower = hi15001700μA
SID270_IIDD_MED_Intpower = med700900μA
SID271_IIDD_LOW_Intpower = loμA
GBWVDDA = 2.7 V
SID272_IGBW_HI_Intpower = hi8MHzOutput is 0.25 V to VDDA-0.25 V
General opamp specs for both internal and external modes
SID281VINCharge-pump on, VDDA = 2.7 V-0.05VDDA-0.2V
SID282VCMCharge-pump on, VDDA = 2.7 V-0.05VDDA-0.2V
VOUTVDDA = 2.7 V

Temperature Sensor

Table 11. Temperature Sensor Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
IDDOpamp block current, External load
SID269IDD_HIpower = hi-11001850µA-
SID270IDD_MEDpower = med-550950µA-
SID271IDD_LOWpower = lo-150350µA-
GBWLoad = 20 pF, 0.1 mA VDD A = 2.7 V
SID272GBW_HIpower = hi6--MHzInput and output are 0.2 V to VDD A-0.2 V
SID273GBW_MEDpower = med3--MHzInput and output are 0.2 V to VDD A-0.2 V
SID274GBW_LOpower = lo-1-MHzInput and output are 0.2 V to VDD A-0.2 V
IOUT_MAXVDD A = 2.7 V, 500 mV from rail
SID275IOUT_MAX_HIpower = hi10--mAOutput is 0.5 V to VDD A -0.5 V
SID276IOUT_MAX_MIDpower = med10--mAOutput is 0.5 V to VDD A -0.5 V
SID277IOUT_MAX_LOpower = lo-5-mAOutput is 0.5 V to VDD A -0.5 V
IOUTVDD A = 1.71 V, 500 mV from rail
SID278IOUT_MAX_HIpower = hi4--mAOutput is 0.5 V to VDD A -0.5 V
SID279IOUT_MAX_MIDpower = med4--mAOutput is 0.5 V to VDD A -0.5 V
SID280IOUT_MAX_LOpower = lo-2-mAOutput is 0.5 V to VDD A -0.5 V
IDD_IntOpamp block current Internal Load
SID269_IIDD_HI_Intpower = hi-15001700µA-
SID270_IIDD_MED_Intpower = med-700900µA-
SID271_IIDD_LOW_Intpower = lo---µA

SAR ADC

Table 12. SAR ADC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
IDDOpamp block current, External load-11001850µA-
SID269IDD_HIpower = hi-550950µA-
SID270IDD_MEDpower = med-150350µA-
SID271IDD_LOWpower = lo-150

Table 12. SAR ADC Specifications (continued)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/
Conditions
SID99A_OFFSETInput offset voltage2mVMeasured with
1-V reference
SID100A_ISARCurrent consumption1mA
SID101A_VINSInput voltage range - single endedVSSVDDAV
SID102A_VINDInput voltage range - differentialVSSVDDAV
SID103A_INRESInput resistance2.2
SID104A_INCAPInput capacitance10pF
SID260VREFSAR
SAR ADC AC Specifications
Trimmed internal reference to SAR1.1881.21.212V
SID106A_PSRRPower supply rejection ratio70dB
SID107A_CMRRCommon mode rejection ratio66dBMeasured at 1 V
SID108A_SAMPSample rate1Msps
SID109A_SNRSignal-to-noise and distortion ratio (SINAD)65dBFIN = 10 kHz
SID110A_BWInput bandwidth without aliasingA_samp/2kHz
SID111A_INLIntegral non linearity. VDD = 1.71 to 5.5, 1 Msps–1.72LSBVREF = 1 to VDD
SID111AA_INLIntegral non linearity. VDDD = 1.71 to 3.6, 1 Msps–1.51.7LSBVREF = 1.71 to
VDD
SID111BA_INLIntegral non linearity. VDD = 1.71 to 5.5, 500 ksps–1.51.7LSBVREF = 1 to VDD
SID112A_DNLDifferential non linearity. VDD = 1.71 to 5.5,
1 Msps
–12.2LSBVREF = 1 to VDD
SID112AA_DNLDifferential non linearity. VDD = 1.71 to 3.6,
1 Msps
–12LSBVREF = 1.71 to
VDD
SID112BA_DNLDifferential non linearity. VDD = 1.71 to 5.5,
500 ksps
–12.2LSBVREF = 1 to VDD
SID113A_THDTotal harmonic distortion–65dBFin = 10 kHz
SID261FSARINTREFSAR operating speed without external reference
bypass
100ksps12-bit resolution

CSD and IDAC

Table 13. CSD and IDAC Specifications

SPEC ID#ParameterDescriptionMinTypMaxUnitsDetails / Conditions
SYS.PER#3VDD_RIPPLEMax allowed ripple on power supply,
DC to 10 MHz
±50mVVDD > 2 V (with ripple),
25 °C TA, Sensitivity =
0.1 pF
SYS.PER#16VDD_RIPPLE_1.8Max allowed ripple on power supply,
DC to 10 MHz
±25mVVDD > 1.75V (with ripple),
25 °C TA, Parasitic Capaci
tance (CP) < 20 pF,
Sensitivity ≥ 0.4 pF
SID.CSD.BLKICSDMaximum block current4000μAMaximum block current for
both IDACs in dynamic
(switching) mode including
comparators, buffer, and
reference generator
SID.CSD#15VREFVoltage reference for CSD and
Comparator
0.61.2VDDA - 0.6VVDDA – 0.6 or 4.4,
whichever is lower
SID.CSD#15AVREF_EXTExternal Voltage reference for CSD
and Comparator
0.6VDDA - 0.6VVDDA – 0.6 or 4.4,
whichever is lower
SID.CSD#16IDAC1IDDIDAC1 (7-bits) block current1750μA
SID.CSD#17IDAC2IDDIDAC2 (7-bits) block current1750μA
SID308VCSDVoltage range of operation1.715.5V1.8 V ±5% or 1.8 V to 5.5 V
SID308AVCOMPIDACVoltage compliance range of IDAC0.6VDDA –0.6VVDDA – 0.6 or 4.4,
whichever is lower
SID309IDAC1DNLDNL–11LSB
SID310IDAC1INLINL–22LSBINL is ±5.5 LSB for VDDA <
2 V
SID311IDAC2DNLDNL–11LSB
SID312IDAC2INLINL–22LSBINL is ±5.5 LSB for VDDA <
2 V
SID313SNRRatio of counts of finger to noise.
Guaranteed by characterization
5RatioCapacitance range of 5 to
35 pF, 0.1-pF sensitivity. All
use cases. VDDA > 2 V.
SID314IDAC1CRT1Output current of IDAC1 (7 bits) in
low range
4.25.4μALSB = 37.5-nA typ
SID314AIDAC1CRT2Output current of IDAC1(7 bits) in
medium range
3441μALSB = 300-nA typ
SID314BIDAC1CRT3Output current of IDAC1(7 bits) in
high range
275330μALSB = 2.4-μA typ
SID314CIDAC1CRT12Output current of IDAC1 (7 bits) in
low range, 2X mode
810.5μALSB = 75-nA typ
SID314DIDAC1CRT22Output current of IDAC1(7 bits) in
medium range, 2X mode
6982μALSB = 600-nA typ.
SID314EIDAC1CRT32Output current of IDAC1(7 bits) in
high range, 2X mode
540660μALSB = 4.8-μA typ
SID315IDAC2CRT1Output current of IDAC2 (7 bits) in
low range
4.25.4μALSB = 37.5-nA typ
SID315AIDAC2CRT2Output current of IDAC2 (7 bits) in
medium range
3441μALSB = 300-nA typ
SID315BIDAC2CRT3Output current of IDAC2 (7 bits) in
high range
275330μALSB = 2.4-μA typ
SID315CIDAC2CRT12Output current of IDAC2 (7 bits) in
low range, 2X mode
810.5μALSB = 75-nA typ
SID315DIDAC2CRT22Output current of IDAC2(7 bits) in
medium range, 2X mode
6982μALSB = 600-nA typ
SID315EIDAC2CRT32Output current of IDAC2(7 bits) in
high range, 2X mode
540660μALSB = 4.8-μA typ
SID315FIDAC3CRT13Output current of IDAC in 8-bit mode
in low range
810.5μALSB = 37.5-nA typ

Table 13. CSD and IDAC Specifications (continued)
-------------------------------------------------------
SPEC ID#ParameterDescriptionMinTypMaxUnitsDetails / Conditions
SID315GIDAC3CRT23Output current of IDAC in 8-bit mode
in medium range
6982μALSB = 300-nA typ
SID315HIDAC3CRT33Output current of IDAC in 8-bit mode
in high range
540660μALSB = 2.4-μA typ
SID320IDACOFFSETAll zeroes input1LSBPolarity set by Source or
Sink. Offset is 2 LSBs for
37.5 nA/LSB mode
SID321IDACGAINFull-scale error less offset±10%
SID322IDACMISMATCH1Mismatch between IDAC1 and
IDAC2 in Low mode
9.2LSBLSB = 37.5-nA typ
SID322AIDACMISMATCH2Mismatch between IDAC1 and
IDAC2 in Medium mode
5.6LSBLSB = 300-nA typ
SID322BIDACMISMATCH3Mismatch between IDAC1 and
IDAC2 in High mode
6.8LSBLSB = 2.4-μA typ
SID323IDACSET8Settling time to 0.5 LSB for 8-bit IDAC5μsFull-scale transition. No
external load
SID324IDACSET7Settling time to 0.5 LSB for 7-bit IDAC5μsFull-scale transition. No
external load
SID325CMODExternal modulator capacitor.2.2nF5-V rating, X7R or NP0 cap

10-bit CapSense ADC

Table 14. 10-bit CapSense ADC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
I_DDOpamp block current, External load
SID269I_DD_HIpower = hi11001850µA
SID270I_DD_MEDpower = med550950µA
SID271I_DD_LOWpower = lo150350µA
G_BWLoad = 20 pF, 0.1 mA V_DDA = 2.7 V
SID272G_BW_HIpower = hi6MHzInput and output are 0.2 V to V_DDA-0.2 V
SID273G_BW_MEDpower = med3MHzInput and output are 0.2 V to V_DDA-0.2 V
SID274G_BW_LOpower = lo1MHzInput and output are 0.2 V to V_DDA-0.2 V
I_OUT_MAXV_DDA = 2.7 V, 500 mV from rail
SID275I_OUT_MAX_HIpower = hi10mAOutput is 0.5 V to V_DDA -0.5 V
SID276I_OUT_MAX_MIDpower = med10mAOutput is 0.5 V to V_DDA -0.5 V
SID277I_OUT_MAX_LOpower = lo5mAOutput is 0.5 V to V_DDA

Table 14. 10-bit CapSense ADC Specifications (continued)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
I_DDOpamp block current, External load
SID269I_DD_HIpower = hi11001850µA
SID270I_DD_MEDpower = med550950µA
SID271I_DD_LOWpower = lo150350µA
G_BWLoad = 20 pF, 0.1 mA
V_DDA = 2.7 V
SID272G_BW_HIpower = hi6MHzInput and output are 0.2 V to
V_DDA-0.2 V
SID273G_BW_MEDpower = med3MHzInput and output are 0.2 V to
V_DDA-0.2 V
SID274G_BW_LOpower = lo1MHzInput and output are 0.2 V to
V_DDA-0.2 V
I_OUT_MAXV_DDA = 2.7 V, 500 mV from rail
SID275I_OUT_MAX_HIpower = hi10mAOutput is 0.5 V to V_DDA
-0.5 V
SID276I_OUT_MAX_MIDpower = med10mAOutput is 0.5 V to V_DDA
-0.5 V
SID277I_OUT_MAX_LOpower = lo5mAOutput is 0.5 V to V_DDA
-0.5 V
I_OUTV_DDA = 1.71 V, 500 mV from rail

Digital Peripherals

Timer Counter Pulse-Width Modulator (TCPWM)

Table 15. TCPWM Specifications

Spec IDParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID.TCPWM.1ITCPWM1Block current consumption at 3 MHz45μAAll modes (TCPWM)
SID.TCPWM.2ITCPWM2Block current consumption at 12 MHz155μAAll modes (TCPWM)
SID.TCPWM.2AITCPWM3Block current consumption at 48 MHz650μAAll modes (TCPWM)
SID.TCPWM.3TCPWMFREQOperating frequencyFcMHzFc max = CLK_SYS
Maximum = 48 MHz
SID.TCPWM.4TPWMENEXTInput trigger pulse width2/FcFor all trigger events[7]
SID.TCPWM.5TPWMEXTOutput trigger pulse widths2/FcnsMinimum possible width
of Overflow, Underflow,
and CC (Counter equals
Compare value) outputs
SID.TCPWM.5ATCRESResolution of counter1/FcnsMinimum time between
successive counts
SID.TCPWM.5BPWMRESPWM resolution1/FcnsMinimum pulse width of
PWM Output
SID.TCPWM.5CQRESQuadrature inputs resolution1/FcnsMinimum pulse width
between Quadrature
phase inputs

I 2C

Table 16. Fixed I2C DC Specifications[7]

Spec IDParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID149I2C1Block current consumption at 100 kHz50μA
SID150I2C2Block current consumption at 400 kHz135μA
SID151I2C3Block current consumption at 1 Mbps310μA
SID152I2C4I²C enabled in Deep Sleep mode1μA

Table 17. Fixed I2C AC Specifications[7]

Spec IDParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID153I2C1Bit rate1Msps

SPI

Absolute Maximum Ratings

Table 1. Absolute Maximum Ratings[1]

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/
Conditions
SID1VDDD_ABSDigital supply relative to VSS–0.56
SID2VCCD_ABSDirect digital core voltage input relative
to VSS
–0.51.95V
SID3VGPIO_ABSGPIO voltage–0.5VDD+0.5
SID4IGPIO_ABSMaximum current per GPIO–2525mA
SID5IGPIO_injectionGPIO injection current, Max for VIH >
VDDD, and Min for VIL < VSS
–0.50.5mACurrent injected
per pin
BID44ESD_HBMElectrostatic discharge human body
model
2200V
BID45ESD_CDMElectrostatic discharge charged device
model
500V
BID46LUPin current for latch-up–140140mA

Device Level Specifications

All specifications are valid for –40 °C TA 105 °C and TJ 125 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except where noted.

Table 2. DC Specifications

Typical values measured at VDD = 3.3 V and 25 °C.

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/
Conditions
SID53VDDPower supply input voltage1.85.5Internally
regulated supply
SID255VDDPower supply input voltage (VCCD =
VDDD = VDDA)
1.711.89VInternally
unregulated
supply
SID54VCCDOutput voltage (for core logic)1.8
SID55CEFCExternal regulator voltage (VCCD)
bypass
0.1X5R ceramic or
better
SID56CEXCPower supply bypass capacitor1μFX5R ceramic or
better
Active Mode, VDD = 1.8 V to 5.5 V. Typical values measured at VDD = 3.3 V and 25 °C.
SID10IDD5Execute from flash; CPU at 6 MHz1.82.4mA
SID16IDD8Execute from flash; CPU at 24 MHz3.04.6mA
SID19IDD11Execute from flash; CPU at 48 MHz5.47.1mA
Sleep Mode, VDDD = 1.8 V to 5.5 V (Regulator on)
SID22IDD17I²C wakeup WDT, and Comparators on1.11.8mA6 MHZ
SID25IDD20I²C wakeup, WDT, and Comparators on1.52.1mA12 MHZ
Sleep Mode, VDDD = 1.71 V to 1.89 V (Regulator bypassed)

1. Usage above the absolute maximum conditions listed in Table 1 may cause permanent damage to the device. Exposure to Absolute Maximum conditions for extended periods of time may affect device reliability. The Maximum Storage Temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature Storage Life. When used below Absolute Maximum conditions but above normal operating conditions, the device may not operate to specification.

Table 2. DC Specifications (continued)

Typical values measured at VDD = 3.3 V and 25 °C.

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID1VDD_ABSDigital supply relative to VSS–0.56V
SID2VCCD_ABSDirect digital core voltage input relative to VSS–0.51.95V
SID3VGPIO_ABSGPIO voltage–0.5VDD+0.5V
SID4IGPIO_ABSMaximum current per GPIO–2525mA

Table 3. AC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID48FCPUCPU frequencyDC48MHz1.71 ≤ VDD ≤ 5.5
SID49[2]TSLEEPWakeup from Sleep mode0μs
SID50[2]TDEEPSLEEPWakeup from Deep Sleep mode35μs

GPIO

Table 4. GPIO DC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID57VIH[3]Input voltage high threshold0.7  VDDDCMOS Input
SID58VILInput voltage low threshold0.3 
VDDD
CMOS Input
SID241VIH[3]LVTTL input, VDDD < 2.7 V0.7  VDDD
SID242VILLVTTL input, VDDD < 2.7 V0.3 
VDDD
SID243VIH[3] 2.7 V
LVTTL input, VDDD
2.0
SID244VIL 2.7 V
LVTTL input, VDDD
0.8V
SID59VOHOutput voltage high levelVDDD –0.6IOH = 4 mA at 3 V VDDD
SID60VOHOutput voltage high levelVDDD –0.5IOH = 1 mA at 1.8 V
VDDD
SID61VOLOutput voltage low level0.6IOL = 4 mA at 1.8 V VDDD
SID62VOLOutput voltage low level0.6IOL = 10 mA at 3 V VDDD
SID62AVOLOutput voltage low level0.4IOL = 3 mA at 3 V VDDD
SID63RPULLUPPull-up resistor3.55.68.5
SID64RPULLDOWNPull-down resistor3.55.68.5
SID65IILInput leakage current (absolute
value)
2nA25 °C, VDDD = 3.0 V
SID66CINInput capacitance7pF
SID67[4]VHYSTTLInput hysteresis LVTTL2540VDDD
 2.7 V
SID68[4]VHYSCMOSInput hysteresis CMOS0.05 × VDDDmVVDD < 4.5 V
SID68A[4]VHYSCMOS5V5Input hysteresis CMOS200VDD > 4.5 V
SID69[4]IDIODECurrent through protection diode to
VDD/VSS
100μA
SID69A[4]ITOT_GPIOMaximum total source or sink chip
current
200mA

Table 5. GPIO AC Specifications

(Guaranteed by Characterization)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID28IDD23I²C wakeup, WDT, and Comparators on1.11.8mA6 MHZ
SID28AIDD23AI²C wakeup, WDT, and Comparators on1.52.1mA12 MHZ
SID30IDD25I²C wakeup and WDT on; T = –40 °C to 60 °C2.540µAT = –40 °C to 60 °C
SID31IDD26I²C wakeup and WDT on2.5125µAMax is at 3.6 V and 85 °C
SID33IDD28I²C wakeup and WDT on; T = –40 °C to 60 °C2.540µAT = –40 °C to 60 °C
SID34IDD29I²C wakeup and WDT on2.5125µAMax is at 5.5 V and 85 °C
SID36IDD31I²C wakeup and WDT on; T = –40 °C to 60 °C2.560µAT = –40 °C to 60 °C
SID37IDD32I²C wakeup and WDT on2.5180µAMax is at 1.89 V and 85 °C
SID307IDD_XRSupply current while XRES asserted25mA
Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID48FCPUCPU frequencyDC48MHz1.71 ≤ VDD ≤ 5.5
SID49[2]TSLEEPWakeup from Sleep mode0µs
SID50[2]TDEEPSLEEPWakeup from Deep Sleep mode35µs

Notes

3. VIH must not exceed VDDD + 0.2 V.

4. Guaranteed by characterization.

Table 5. GPIO AC Specifications (continued)

(Guaranteed by Characterization)

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID70TRISEFRise time in fast strong mode212ns3.3 V VDDD, Cload = 25 pF
SID71TFALLFFall time in fast strong mode212ns3.3 V VDDD, Cload = 25 pF
SID72TRISESRise time in slow strong mode1060ns3.3 V VDDD, Cload

XRES

Table 6. XRES DC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID57V_IH[3]Input voltage high threshold0.7 × V_DDDVCMOS Input
SID58V_ILInput voltage low threshold0.3 × V_DDDVCMOS Input
SID241V_IH[3]LVTTL input, V_DDD < 2.7 V0.7 × V_DDDV
SID242V_ILLVTTL input, V_DDD < 2.7 V0.3 × V_DDDV
SID243V_IH[3]LVTTL input, V_DDD ≥ 2.7 V2.0V
SID244V_ILLVTTL input, V_DDD ≥ 2.7 V0.8V
SID59V_OHOutput voltage high levelV_DDD – 0.6VI_OH =

Table 7. XRES AC Specifications

Spec ID#ParameterDescriptionMinTypMaxUnitsDetails/Conditions
SID83[5]TRESETWIDTHReset pulse width1μs
BID194[5]TRESETWAKEWake-up time from reset release2.7ms

Thermal Information

ParameterDescriptionPackageMinTypMaxUnits
TAOperating ambient temperature–4025105°C
TJOperating junction temperature–40125°C
TJAPackage θJA44-pin TQFP55.6°C/Watt
TJCPackage θJC44-pin TQFP14.4°C/Watt
TJAPackage θJA64-pin TQFP (0.5-mm pitch)46°C/Watt
TJCPackage θJC64-pin TQFP (0.5-mm pitch)10°C/Watt
TJAPackage θJA64-pin TQFP (0.8-mm pitch)36.8°C/Watt
TJCPackage θJC64-pin TQFP (0.8-mm pitch)9.4°C/Watt
TJAPackage θJA48-pin TQFP (0.5-mm pitch)39.4°C/Watt
TJCPackage θJC48-pin TQFP (0.5-mm pitch)9.3°C/Watt

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