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BQ25504RGRR

Ultra Low-Power Boost Converter With Battery Management For Energy Harvester Applications

The BQ25504RGRR is a ultra low-power boost converter with battery management for energy harvester applications from Texas Instruments. View the full BQ25504RGRR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official BQ25504RGRR datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Package

VQFN (16)

BQ25504RGRR Key Specifications

ParameterValue
Peak Input Power400 mW
Quiescent Current330 nA (typical)
Cold-Start Voltage600 mV (typical) to 700 mV (max)
Package Dimensions3.00 mm x 3.00 mm
Switching Frequency1 MHz
Battery Voltage Range2.5 V to 5.25 V
Operating Temperature Range-40°C to 85°C
Minimum Cold-Start Input Power15 µW (typical)
Input Voltage Range (Continuous)130 mV to 3 V

BQ25504RGRR Overview

Part: BQ25504 (BQ25504RGRR) — Texas Instruments

Type: Ultra Low-Power Boost Converter / Battery Charger for Energy Harvesting

Description: Ultra low-power boost converter/charger with battery management for energy harvesters. It cold-starts from VIN ≥ 600 mV (typ), harvests down to VIN = 130 mV (typ), and has a quiescent current below 330 nA (typ).

Operating Conditions:

  • DC input voltage (VIN_DC): 0.13–3 V (maximum input power ≤ 300 mW, after cold start)
  • Battery voltage (VBAT): 2.5–5.25 V
  • Operating ambient temperature: -40 to 85 °C
  • Operating junction temperature: -40 to 105 °C
  • Input inductance: 22 μH nominal (19.8–24.2 μH)

Absolute Maximum Ratings:

  • Max input voltage (VIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VBAT_UV, VRDIV, OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBST): 5.5 V (min -0.3 V)
  • Peak input power: 400 mW
  • Operating junction temperature: -40 to 125 °C
  • Storage temperature: -65 to 150 °C

Key Specs:

  • Cold-start input voltage VIN(CS): 600 mV typical, 700 mV max
  • Continuous harvesting down to VIN ≥ 130 mV (typ)
  • Quiescent current IQ < 330 nA (typ)
  • Recommended input and storage capacitance (CHVR, CSTOR): 4.7 μF nominal
  • Recommended battery pin capacitance: ≥ 100 μF
  • MPPT reference resistor total (ROC1 + ROC2): 20 MΩ nominal
  • Undervoltage and overvoltage divider totals: 10 MΩ nominal each

Features:

  • High-efficiency DC-DC boost converter/charger for low-input sources
  • Programmable dynamic maximum power point tracking (MPPT)
  • Input voltage regulation prevents collapsing the input source
  • Stores energy in Li-ion batteries, thin-film batteries, super-capacitors, or conventional capacitors
  • User-programmable battery undervoltage and overvoltage levels
  • On-chip temperature sensor with programmable overtemperature shutoff
  • Battery-good output (VBAT_OK) with programmable threshold and hysteresis, which can warn a microcontroller of pending power loss or enable/disable system loads

Applications:

  • Energy harvesting
  • Solar chargers
  • Thermal electric generator (TEG) harvesting
  • Wireless sensor networks
  • Industrial monitoring
  • Environmental monitoring
  • Bridge and structural health monitoring
  • Smart building controls
  • Portable and wearable health devices
  • Entertainment system remote controls

Package:

  • VQFN (16), 3.00 mm × 3.00 mm (RGT)

BQ25504RGRR Features

  • Ultra low-power with high-efficiency DC-DC boost converter/charger
  • -Continuous energy harvesting from low-input sources: VIN ≥ 130 mV (Typical)
  • -Ultra-low quiescent current: IQ < 330 nA (Typical)
  • -Cold-start voltage: V IN ≥ 600 mV (typical)
  • Programmable dynamic maximum power point tracking (MPPT)
  • -Integrated dynamic maximum power point tracking for optimal energy extraction from a variety of energy generation sources
  • -Input voltage regulation prevents collapsing input source
  • Energy storage
  • -Energy can be stored to rechargeable li-ion batteries, thin-film batteries, super-capacitors, or conventional capacitors
  • Battery charging and protection
  • -User Programmable undervoltage and overvoltage levels
  • -On-chip temperature sensor with programmable overtemperature shutoff
  • Battery status output
  • -Battery good output pin
  • -Programmable threshold and hysteresis
  • -Warn attached microcontrollers of pending loss of power
  • -Can be used to enable or disable system loads

BQ25504RGRR Applications

  • Energy harvesting
  • Solar chargers
  • Thermal electric generator (TEG) harvesting
  • Wireless sensor networks (WSNs)
  • Industrial monitoring
  • Environmental monitoring
  • Bridge and structural health monitoring (SHM)
  • Smart building controls
  • Portable and wearable health devices
  • Entertainment system remote controls

BQ25504RGRR Pin Configuration

Figure 6-1. RGT Package 16 Pins Top View

Table 6-1. Pin Functions

PIN - NAMEPIN - NO.I/ODESCRIPTION
AVSS12SupplySignal ground connection for the device. Connect to thermal pad.
LBST16InputInductor connection for the boost charger switching node. Connect a 22 μH inductor between this pin and pin 2 (VIN_DC).
OK_HYST9InputConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK hysteresis threshold. If not used, connect this pin to GND.
OK_PROG10InputConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK threshold. If not used, connect this pin to GND.
OT_PROG5InputDigital Programming input for IC overtemperature threshold. Connect to GND for 60 C threshold or VSTOR for 120 C threshold.
VBAT14I/OConnect a rechargeable storage element with at least 100 μF of equivalent capacitance to this pin.
VBAT_OK11OutputDigital output for battery good indicator. Internally referenced to the VSTOR voltage. Leave floating if not used.
VBAT_OV6InputConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VSTOR = VBAT overvoltage threshold.
VBAT_UV8InputConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT undervoltage threshold. The PFET between VBAT and VSTOR opens if the voltage on VSTOR is below this threshold.
VIN_DC2InputDC voltage input from energy harvesters. Connect at least a 4.7 μF capacitor as close as possible between this pin and pin 1.
VOC_SAMP3InputSampling pin for MPPT network. Connect to the mid-point of external resistor divider between VIN_DC and GND for setting the MPP threshold voltage which will be stored on the VREF_SAMP pin. To disable the MPPT sampling circuit, connect to VSTOR.
VRDIV7OutputResistor divider biasing voltage.
VREF_SAMP4InputConnect a 0.01 μF low leakage capacitor from this pin to GND to store the voltage to which VIN_DC will be regulated. This voltage is provided by the MPPT sample circuit. When MPPT is disabled, either use an external voltage source to provide this voltage or tie this pin to GND to disable input voltage regulation (i.e. operate from a low impedance power supply).
VSS1InputGeneral ground connection for the device. Connect to thermal pad.
VSS13SupplyGeneral ground connection for the device. Connect to thermal pad.
VSTOR15OutputConnection for the output of the boost charger, which is typically connected to the system load. Connect at least a 4.7 μF capacitor in parallel with a 0.1 μF capacitor as close as possible to between this pin and pin 1 (VSS).

BQ25504RGRR Electrical Characteristics

Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 μH, CHVR = 4.7 μF CSTOR= 4.7 μF.

PARAMETERPARAMETERTEST CONDITIONSMINTYPMAXUNIT
BOOST CONVERTER \ CHARGER STAGEBOOST CONVERTER \ CHARGER STAGEBOOST CONVERTER \ CHARGER STAGEBOOST CONVERTER \ CHARGER STAGEBOOST CONVERTER \ CHARGER STAGEBOOST CONVERTER \ CHARGER STAGEBOOST CONVERTER \ CHARGER STAGE
V IN(DC)DC input voltage into VIN_DCCold-start completed1303000mV
I IN(DC)Peak Current flowing from V IN into VIN_DC input0.5V < V IN < 3 V; VSTOR = 4.2 V200300mA
P INInput power range for normal chargingVBAT > VIN_DC; VIN_DC = 0.5 V0.01300mW
V IN(CS)Cold-start Voltage. Input voltage that will start charging of VSTORVBAT < VBAT_UV; VSTOR = 0 V; 0°C < T A < 85°C600700mV
P IN(CS)Minimum cold-start input power to start normal chargingVBAT < VSTOR (CHGEN) VIN_DC clamped to VIN_CS by cold start circuit VBAT = 100 μF ceramic15μW
V STOR_CHGENVoltage on VSTOR when cold start operation ends and normal charger operation begins1.61.771.95V
R BAT(on)Resistance of switch between VBAT and VSTOR when turned on.VBAT = 4.2 V; VSTOR load = 50 mA2Ω
R DS(on)Charger Low Side switch ON resistanceVBAT = 2.1 V
VBAT = 4.2 V
2
2
Ω
Charger rectifier High Side switch ON resistanceVBAT = 2.1 V
VBAT = 4.2 V
5
5
Ω
f SW_BST Boost converter mode switching frequency 1 MHzf SW_BST Boost converter mode switching frequency 1 MHzf SW_BST Boost converter mode switching frequency 1 MHzf SW_BST Boost converter mode switching frequency 1 MHzf SW_BST Boost converter mode switching frequency 1 MHzf SW_BST Boost converter mode switching frequency 1 MHzf SW_BST Boost converter mode switching frequency 1 MHz
I VBATLeakage on VBAT pinVBAT = 2.1 V; VBAT_UV = 2.3 V, T J = 25°C VSTOR = 0 V
VBAT = 2.1 V; VBAT_UV = 2.3 V, -40°C < T J < 65°C, VSTOR = 0 V
15
80
nA
nA
I VSTORVSTOR Quiescent current Charger Shutdown in UV ConditionVIN_DC = 0V; VBAT < VBAT_UV = 2.4V; VSTOR = 2.2V, No load on VBAT330750nA
I VSTORVSTOR Quiescent current Charger Shutdown in OV ConditionVIN_DC = 0V, VBAT > VBAT_OV, VSTOR = 4.25, No load on VBAT5701400nA
V BAT_OVProgrammable voltage range for overvoltage threshold (Battery voltage is rising)VSTOR increasing2.55.25V
V BAT_OV_HYSTBattery voltage overvoltage hysteresis threshold (Battery voltage is falling), internal thresholdVSTOR decreasing183589mV
V BAT_UVProgrammable voltage range for under voltage threshold (Battery voltage is falling)VSTOR decreasing; VBAT_UV > V Bias2.2VBAT_OVV
V BAT_UV_HYSTBattery under voltage threshold hysteresis, internal thersholdVSTOR increasing4080125mV
V BAT_OKProgrammable voltage range for threshold voltage for high to low transition of digital signal indicating battery is OK,VSTOR decreasingVBAT_UVVBAT_OVV
V BAT_OK_HYSTProgrammable voltage range for threshold voltage for low to high transition of digital signal indicating battery is OK,VSTOR increasing50VBAT_OV- VBAT_UVmV
V BAT_ACCURACYOverall Accuracy for threshold values, UV, OV, VBAT_OKSelected resistors are 0.1% tolerance-5%5%

BQ25504RGRR Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
Input voltageVIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VBAT_UV, VRDIV,-0.35.5V
Peak Input Power, P IN_PKOK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBST (2)400mW
Operating junction temperature range, T JOperating junction temperature range, T J-40125°C
Storage temperature range, T stgStorage temperature range, T stg-65150°C
MINNOMMAXUNIT
V IN (DC)DC input voltage into VIN_DC (1)0.133V
VBATBattery voltage range (2)2.55.25V
C HVRInput capacitance4.234.75.17μF
C STORStorage capacitance4.234.75.17μF
C BATBattery pin capacitance or equivalent battery capacity100μF
C REFSampled reference storage capacitance91011nF
R OC1 + R OC2Total resistance for setting for MPPT reference.182022MΩ
R OK 1 + R OK 2 + R OK3Total resistance for setting reference voltage.91011MΩ
R UV1 + R UV2Total resistance for setting reference voltage.91011MΩ
R OV1 + R OV2Total resistance for setting reference voltage.91011MΩ
L BSTInput inductance19.82224.2μH
T AOperating free air ambient temperature-4085°C
T JOperating junction temperature-40105°C
  • (1) Maximum input power ≤ 300 mW. Cold start has been completed

(2) VBAT_OV setting must be higher than VIN_DC

BQ25504RGRR Thermal Information

THERMAL METRIC (1)BQ25504 RGT (QFN) PINS - 16UNIT
R θJAJunction-to-ambient thermal resistance48.5°C/W
R θJC(top)Junction-to-case (top) thermal resistance63.9°C/W
R θJBJunction-to-board thermal resistance22°C/W
ψ JTJunction-to-top characterization parameter1.8°C/W
ψ JBJunction-to-board characterization parameter22°C/W
R θJC(bot)Junction-to-case (bottom) thermal resistance6.5°C/W

BQ25504RGRR Typical Application

  • A. Place close as possible to IC pin 15 (VSTOR) and pin 13 (VSS)
  • B. See the Capacitor Selection section for guidance on sizing CSTOR

Figure 9-1. Typical Solar Application Circuit

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BQ25504Texas InstrumentsVQFN (16)
BQ25504RGTRTexas Instruments16-VFQFN Exposed Pad
BQ25504RGTR.BTexas InstrumentsVQFN-16 3.0x3.0mm
BQ25504RGTTTexas Instruments16-VFQFN Exposed Pad
BQ25504RGTT.BTexas InstrumentsVQFN-16 3.0x3.0mm

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All Boost Converters datasheetsAll Texas Instruments datasheets (2,417)

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