BQ24195/L
Battery Charger with Boost ConverterThe BQ24195/L is a battery charger with boost converter from Texas Instruments. View the full BQ24195/L datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Boost ConvertersOverview
Part: bq24195, bq24195L — Texas Instruments
Type: Switch-Mode Battery Charge Management and System Power Path Management IC
Description: Highly-integrated switch-mode battery charge management and system power path management devices for single cell Li-Ion and Li-polymer batteries, offering 2.5-A (bq24195L) or 4.5-A (bq24195) fast charging, synchronous boost operation for 5.1 V at 1 A/2.1 A, and I2C control.
Operating Conditions:
- Supply voltage: 3.9–17 V
- Operating temperature: -40 to 85 °C
- Max input current: 3 A
- Max system output current: 4.5 A (bq24195), 2.5 A (bq24195L)
Absolute Maximum Ratings:
- Max VBUS voltage: 22 V
- Max BAT, SYS voltage (converter not switching): 6 V
- Max continuous output sink current (INT, STAT): 6 mA
- Max junction temperature: 150 °C
- Max storage temperature: 150 °C
Key Specs:
- Charge Efficiency: 92% at 2 A (bq24195L), 90% at 4 A (bq24195)
- Boost Efficiency: 94% at 1 A (bq24195L), 91% at 2.1 A (bq24195)
- Battery Discharge MOSFET Resistance: 12 mΩ
- Charge Voltage Regulation Accuracy: ±0.5% (0°C to 125°C)
- Charge Current Regulation Accuracy: ±7% (0°C to 125°C)
- Switching Frequency: 1.5 MHz
- Battery Discharge Current (High-Z Mode, no VBUS, BATFET disabled): 12 μA (typical, -40°C to 85°C)
- VBUS Over-Voltage Rising Threshold: 17.4 V (min)
Features:
- High Efficiency Switch Mode Charger
- Synchronous Boost Converter in Battery Boost Mode
- Highest Battery Discharge Efficiency with 12-mΩ Battery Discharge MOSFET
- Single Input USB-compliant/Adapter Charger with D+/D- Detection
- Narrow VDC (NVDC) Power Path Management
- Autonomous Battery Charging with or without Host Management
- High Accuracy Charge Voltage, Current, and Output Regulation
- Integrated Current Sensing, Bootstrap Diode, Internal Loop Compensation
- Safety features: Battery Temperature Sensing, Thermal Regulation, Over-Voltage/Over-Current Protection
- I2C Controlled
Applications:
- Power Bank for Smartphone, Tablet
- Tablet PC and Smart Phone
- Portable Audio Speaker
- Portable Media Players
- Internet Devices
Package:
- VQFN (24) 4.00 mm x 4.00 mm
Features
- High Efficiency Switch Mode Charger
- -2.5-A (bq24195L) or 4.5-A (bq24195) Fast Charging
- -92% Charge Efficiency at 2 A, 90% at 4 A
- Synchronous Boost Converter in Battery Boost Mode
- -5.1 V at 1 A (bq24195L) or 5.1 V at 2.1 A (bq24195)
- -94% 5.1-V Boost Efficiency at 1 A, 91% at 2.1 A
- Highest Battery Discharge Efficiency with 12-m Ω Battery Discharge MOSFET up to 9-A Discharge Current
- Single Input USB-compliant/Adapter Charger
- -USB Host or Charging Port D+/D- Detection Compatible to USB Battery Charger Spec 1.2
- -Input Voltage and Current Limit Supports USB2.0 and USB3.0
- -Input Current Limit: 100 mA, 150 mA, 500 mA, 900 mA, 1.2 A, 1.5 A, 2 A and 3 A
- 3.9-V to 17-V Input Operating Voltage Range
- -Support All Kinds of Adapter with Input Voltage DPM Regulation
- Narrow VDC (NVDC) Power Path Management
- -Instant-on Works with No Battery or Deeply Discharged Battery
- -Ideal Diode Operation in Battery Supplement Mode
- 1.5-MHz Switching Frequency for Low Profile Inductor
- Autonomous Battery Charging with or without Host Management
- -Battery Charge Enable
- -Battery Charge Preconditioning
- -Charge Termination and Recharge
- High Accuracy (0°C to 125°C)
- -±0.5% Charge Voltage Regulation
- -±7% Charge Current Regulation
- -±7.5% Input Current Regulation
- -±2% Output Regulation in Boost Mode
- High Integration
- -Power Path Management
- -Synchronous Switching MOSFETs
1
bq24195, bq24195L
SLUSB97A -OCTOBER 2012-REVISED DECEMBER 2014
Applications
- Power Bank for Smartphone, Tablet
- Tablet PC and Smart Phone
- Portable Audio Speaker
- Portable Media Players
- Internet Devices
Pin Configuration
RGE Package 24-Pin VQFN With Exposed Thermal Pad (Top View)
Pin Functions
| PIN | PIN | TYPE | DESCRIPTION |
|---|---|---|---|
| NAME | NUMBER | TYPE | DESCRIPTION |
| VBUS | 1,24 | P | Charger Input Voltage. The internal n-channel reverse block MOSFET (RBFET) is connected between VBUS and PMID with VBUS on source. Place a 1-μF ceramic capacitor from VBUS to PGND and place it as close as possible to IC. (Refer to Application Information Section for details) |
| D+ | 2 | I Analog | Positive line of the USB data line pair. D+/D- based USB host/charging port detection. The detection includes data contact detection (DCD) and primary detection in bc1.2. |
| D- | 3 | I Analog | Negative line of the USB data line pair. D+/D- based USB host/charging port detection. The detection includes data contact detection (DCD) and primary detection in bc1.2. |
| STAT | 4 | O Digital | Open drain charge status output to indicate various charger operation. Connect to the pull up rail via 10-k Ω . LOW indicates charge in progress. HIGH indicates charge complete or charge disabled. When any fault condition occurs, STAT pin blinks at 1 Hz. |
| SCL | 5 | I Digital | I 2 C Interface clock. Connect SCL to the logic rail through a 10-k Ω resistor. |
| SDA | 6 | I/O Digital | I 2 C Interface data. Connect SDA to the logic rail through a 10-k Ω resistor. |
| INT | 7 | O Digital | Open-drain Interrupt Output. Connect the INT to a logic rail via 10-k Ω resistor. The INT pin sends active low, 256-us pulse to host to report charger device status and fault. |
| OTG | 8 | I Digital | USB current limit selection pin during buck mode, and active high enable pin during boost mode. In buck mode with USB host, when OTG = High, IIN limit = 500 mA and when OTG = Low, IIN limit = 100 mA. The boost mode is activated when the REG01[5:4] = 10 and OTG pin is High. |
| CE | 9 | I Digital | Active low Charge Enable pin. Battery charging is enabled when REG01[5:4] = 01 and CE pin = Low. CE pin must be pulled high or low. |
| ILIM | 10 | I Analog | ILIM pin sets the maximum input current limit by regulating the ILIM voltage at 1 V. A resistor is connected from ILIM pin to ground to set the maximum limit as I INMAX = (1V/R ILIM ) × 530. The actual input current limit is the lower one set by ILIM and by I 2 C REG00[2:0]. The minimum input current programmed on ILIM pin is 500 mA. |
| TS1 | 11 | I Analog | Temperature qualification voltage input #1. Connect a negative temperature coefficient thermistor. Program temperature window with a resistor divider from REGN to TS1 to GND. Charge suspends when either TS pin is out of range. Recommend 103AT-2 thermistor. TS1 and TS2 pins have to be shorted together. |
| TS2 | 12 | I Analog | Temperature qualification voltage input #2. TS1 and TS2 pins have to be shorted together. |
| BAT | 13,14 | P | Battery connection point to the positive terminal of the battery pack. The internal BATFET is connected between BAT and SYS. Connect a 10 μF closely to the BAT pin. |
Pin Functions
Electrical Characteristics
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = -40°C to 125°C and TJ = 25°C for typical values unless other noted.
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS |
| I BAT | Battery discharge current (BAT, SW, SYS) | V VBUS < V UVLO , VBAT = 4.2 V, leakage between BAT and VBUS | 5 | μA | ||
| I BAT | High-Z Mode, or no VBUS, BATFET disabled (REG07[5] = 1), -40°C to 85°C | 12 | 20 | μA | ||
| I BAT | High-Z Mode, or no VBUS, REG07[5] = 0, -40°C to 85°C | 32 | 55 | μA | ||
| I VBUS | Input supply current (VBUS) | V VBUS = 5 V, High-Z mode | 15 | 30 | μA | |
| I VBUS | V VBUS = 17 V, High-Z mode | 30 | 50 | μA | ||
| I VBUS | V VBUS > V UVLO , V VBUS > V BAT , converter not switching | 1.5 | 3 | mA | ||
| I VBUS | V VBUS > V UVLO , V VBUS > V BAT , converter switching, V BAT = 3.2 V, I SYS = 0 A | 4 | mA | |||
| I VBUS | V VBUS > V UVLO , V VBUS > V BAT , converter switching, V BAT = 3.8 V, I SYS = 0 A | 15 | mA | |||
| I BOOST | Battery discharge current in boost mode | VBAT = 4.2 V, Boost mode, I PMID = 0 A, converter switching | 15 | mA | ||
| VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP |
| V VBUS_OP | VBUS operating range | 3.9 | 17 | V | ||
| V VBUS_UVLOZ | VBUS for active I 2 C, no battery | V VBUS rising | 3.6 | V | ||
| V SLEEP | Sleep mode falling threshold | V VBUS falling, V VBUS-VBAT | 35 | 80 | 120 | mV |
| V SLEEPZ | Sleep mode rising threshold | V VBUS rising, V VBUS-VBAT | 170 | 250 | 350 | mV |
| V ACOV | VBUS over-voltage rising threshold | V VBUS rising | 17.4 | 18 | V | |
| V ACOV_HYST | VBUS over-voltage falling hysteresis | V VBUS falling | 700 | mV | ||
| V BAT_UVLOZ | Battery for active I 2 C, no VBUS | V BAT rising | 2.3 | V | ||
| V BAT_DPL | Battery depletion threshold | V BAT falling | 2.4 | 2.6 | V |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage range (with respect to GND) | VBUS | -2 | 22 | V |
| Voltage range (with respect to GND) | PMID | -0.3 | 22 | V |
| Voltage range (with respect to GND) | STAT, | -0.3 | 20 | V |
| Voltage range (with respect to GND) | BTST | -0.3 | 26 | V |
| Voltage range (with respect to GND) | SW | -2 | 20 | V |
| Voltage range (with respect to GND) | BAT, SYS (converter not switching) | -0.3 | 6 | V |
| Voltage range (with respect to GND) | SDA, SCL, INT, OTG, ILIM, REGN, TS1, TS2, CE, D+, D- | -0.3 | 7 | V |
| Voltage range (with respect to GND) | BTST TO SW | -0.3 | -7 | V |
| Voltage range (with respect to GND) | PGND to GND | -0.3 | -0.3 | V |
| Output sink current | INT, STAT | 6 | mA | |
| Junction temperature | -40°C | 150 | °C | |
| Storage temperature, T stg | -65 | 150 | °C |
Recommended Operating Conditions
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| V IN | Input voltage | 3.9 | 17 (1) | V |
Thermal Information
| THERMAL METRIC (1) | THERMAL METRIC (1) | bq24195 RGE (24 PIN) | UNIT |
|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 32.2 | °C/W |
| R θ JCtop | Junction-to-case (top) thermal resistance | 29.8 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 9.1 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 0.3 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 9.1 | °C/W |
| R θ JCbot | Junction-to-case (bottom) thermal resistance | 2.2 | °C/W |
Typical Application
A typical application consists of the device configured as an I 2 C controlled power path management device and a single cell Li-Ion battery charger for single cell Li-Ion and Li-polymer batteries used in a wide range of tablets and other portable devices. It integrates an input reverse-blocking FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-side switching FET (LSFET, Q3), and BATFET (Q4) between the system and battery. The device also integrates a bootstrap diode for the high-side gate drive.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ24195 | Texas Instruments | VQFN (24) |
| BQ24195L | Texas Instruments | VQFN (24) |
| BQ24195LRGER | Texas Instruments | VQFN-24-EP(4x4) |
| BQ24195LRGER.A | Texas Instruments | — |
| BQ24195LRGET | Texas Instruments | — |
| BQ24195LRGET.A | Texas Instruments | — |
| BQ24195RGER | Texas Instruments | — |
| BQ24195RGER.A | Texas Instruments | — |
| BQ24195RGET | Texas Instruments | — |
| BQ24195RGET.A | Texas Instruments | — |
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