BQ25504RGTT.B
Ultra Low-Power Boost Converter With Battery Management For Energy Harvester ApplicationsThe BQ25504RGTT.B is a ultra low-power boost converter with battery management for energy harvester applications from Texas Instruments. View the full BQ25504RGTT.B datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Ultra Low-Power Boost Converter With Battery Management For Energy Harvester Applications
Overview
Part: BQ25504 — Texas Instruments
Type: Ultra Low-Power Boost Converter With Battery Management For Energy Harvester Applications
Description: The BQ25504 is an intelligent integrated energy harvesting nano-power management solution designed to efficiently acquire and manage microwatts to milliwatts of power from DC sources like photovoltaic or thermal electric generators, featuring a highly efficient boost converter/charger and programmable maximum power point tracking.
Operating Conditions:
- Input voltage for continuous harvesting: ≥ 130 mV (Typical)
- Cold-start voltage: ≥ 600 mV (Typical)
- Operating junction temperature: -40 to +125 °C
Absolute Maximum Ratings:
- Input voltage (VIN_DC, VIN_AC, VBAT_OV, VBAT_UV, VSTOR_OV, VSTOR_UV, VOUT_EN, VOUT_SET, VREF_SAMP, VREF_DIV, VREF_EXT, VREF_IN): -0.3 to 6 V
- Storage temperature: -65 to +150 °C
Key Specs:
- Quiescent current (IQ): < 330 nA (Typical)
- Cold-start input voltage (VIN(CS)): 600 mV (Typical)
- Cold-start input power (PIN(CS)): 15 μW (Typical)
- Boost converter efficiency: Up to 90% (Typical, VIN = 0.5V, VSTOR = 3.3V, IOUT = 10mA)
- Battery good output threshold accuracy: ±1.5% (VSTOR = 2.5 V to 5.2 V, TA = 25 °C)
- Over-voltage protection threshold accuracy: ±1.5% (VSTOR = 2.5 V to 5.2 V, TA = 25 °C)
Features:
- Ultra low-power with high-efficiency DC-DC boost converter/charger
- Continuous energy harvesting from low-input sources: VIN ≥ 130 mV (Typical)
- Ultra-low quiescent current: IQ < 330 nA (Typical)
- Cold-start voltage: VIN ≥ 600 mV (Typical)
- Programmable dynamic maximum power point tracking (MPPT)
- Energy can be stored to rechargeable li-ion batteries, thin-film batteries, super-capacitors, or conventional capacitors
- User Programmable undervoltage and overvoltage levels
- On-chip temperature sensor with programmable overtemperature shutoff
- Battery good output pin with programmable threshold and hysteresis
Applications:
- Energy harvesting
- Solar chargers
- Thermal electric generator (TEG) harvesting
- Wireless sensor networks (WSNs)
- Industrial monitoring
- Environmental monitoring
- Bridge and structural health monitoring (SHM)
- Smart building controls
- Portable and wearable health devices
- Entertainment system remote controls
Package:
- VQFN (16) - 3.00 mm x 3.00 mm
Features
- Ultra low-power with high-efficiency DC-DC boost converter/charger
- -Continuous energy harvesting from low-input sources: VIN ≥ 130 mV (Typical)
- -Ultra-low quiescent current: IQ < 330 nA (Typical)
- -Cold-start voltage: V IN ≥ 600 mV (typical)
- Programmable dynamic maximum power point tracking (MPPT)
- -Integrated dynamic maximum power point tracking for optimal energy extraction from a variety of energy generation sources
- -Input voltage regulation prevents collapsing input source
- Energy storage
- -Energy can be stored to rechargeable li-ion batteries, thin-film batteries, super-capacitors, or conventional capacitors
- Battery charging and protection
- -User Programmable undervoltage and overvoltage levels
- -On-chip temperature sensor with programmable overtemperature shutoff
- Battery status output
- -Battery good output pin
- -Programmable threshold and hysteresis
- -Warn attached microcontrollers of pending loss of power
- -Can be used to enable or disable system loads
Applications
- Energy harvesting
- Solar chargers
- Thermal electric generator (TEG) harvesting
- Wireless sensor networks (WSNs)
- Industrial monitoring
- Environmental monitoring
- Bridge and structural health monitoring (SHM)
- Smart building controls
- Portable and wearable health devices
- Entertainment system remote controls
Pin Configuration
Figure 6-1. RGT Package 16 Pins Top View
Table 6-1. Pin Functions
| PIN | PIN | I/O | DESCRIPTION |
|---|---|---|---|
| NAME | NO. | I/O | DESCRIPTION |
| AVSS | 12 | Supply | Signal ground connection for the device. Connect to thermal pad. |
| LBST | 16 | Input | Inductor connection for the boost charger switching node. Connect a 22 μH inductor between this pin and pin 2 (VIN_DC). |
| OK_HYST | 9 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK hysteresis threshold. If not used, connect this pin to GND. |
| OK_PROG | 10 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK threshold. If not used, connect this pin to GND. |
| OT_PROG | 5 | Input | Digital Programming input for IC overtemperature threshold. Connect to GND for 60 C threshold or VSTOR for 120 C threshold. |
| VBAT | 14 | I/O | Connect a rechargeable storage element with at least 100 μF of equivalent capacitance to this pin. |
| VBAT_OK | 11 | Output | Digital output for battery good indicator. Internally referenced to the VSTOR voltage. Leave floating if not used. |
| VBAT_OV | 6 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VSTOR = VBAT overvoltage threshold. |
| VBAT_UV | 8 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT undervoltage threshold. The PFET between VBAT and VSTOR opens if the voltage on VSTOR is below this threshold. |
| VIN_DC | 2 | Input | DC voltage input from energy harvesters. Connect at least a 4.7 μF capacitor as close as possible between this pin and pin 1. |
| VOC_SAMP | 3 | Input | Sampling pin for MPPT network. Connect to the mid-point of external resistor divider between VIN_DC and GND for setting the MPP threshold voltage which will be stored on the VREF_SAMP pin. To disable the MPPT sampling circuit, connect to VSTOR. |
| VRDIV | 7 | Output | Resistor divider biasing voltage. |
| VREF_SAMP | 4 | Input | Connect a 0.01 μF low leakage capacitor from this pin to GND to store the voltage to which VIN_DC will be regulated. This voltage is provided by the MPPT sample circuit. When MPPT is disabled, either use an external voltage source to provide this voltage or tie this pin to GND to disable input voltage regulation (i.e. operate from a low impedance power supply). |
| VSS | 1 | Input | General ground connection for the device. Connect to thermal pad. |
| VSS | 13 | Supply | General ground connection for the device. Connect to thermal pad. |
| VSTOR | 15 | Output | Connection for the output of the boost charger, which is typically connected to the system load. Connect at least a 4.7 μF capacitor in parallel with a 0.1 μF capacitor as close as possible to between this pin and pin 1 (VSS). |
Electrical Characteristics
Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 μH, CHVR = 4.7 μF CSTOR= 4.7 μF.
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE |
| V IN(DC) | DC input voltage into VIN_DC | Cold-start completed | 130 | 3000 | mV | |
| I IN(DC) | Peak Current flowing from V IN into VIN_DC input | 0.5V < V IN < 3 V; VSTOR = 4.2 V | 200 | 300 | mA | |
| P IN | Input power range for normal charging | VBAT > VIN_DC; VIN_DC = 0.5 V | 0.01 | 300 | mW | |
| V IN(CS) | Cold-start Voltage. Input voltage that will start charging of VSTOR | VBAT < VBAT_UV; VSTOR = 0 V; 0°C < T A < 85°C | 600 | 700 | mV | |
| P IN(CS) | Minimum cold-start input power to start normal charging | VBAT < VSTOR (CHGEN) VIN_DC clamped to VIN_CS by cold start circuit VBAT = 100 μF ceramic | 15 | μW | ||
| V STOR_CHGEN | Voltage on VSTOR when cold start operation ends and normal charger operation begins | 1.6 | 1.77 | 1.95 | V | |
| R BAT(on) | Resistance of switch between VBAT and VSTOR when turned on. | VBAT = 4.2 V; VSTOR load = 50 mA | 2 | Ω | ||
| R DS(on) | Charger Low Side switch ON resistance | VBAT = 2.1 V VBAT = 4.2 V | 2 2 | Ω | ||
| Charger rectifier High Side switch ON resistance | VBAT = 2.1 V VBAT = 4.2 V | 5 5 | Ω | |||
| f SW_BST Boost converter mode switching frequency 1 MHz | f SW_BST Boost converter mode switching frequency 1 MHz | f SW_BST Boost converter mode switching frequency 1 MHz | f SW_BST Boost converter mode switching frequency 1 MHz | f SW_BST Boost converter mode switching frequency 1 MHz | f SW_BST Boost converter mode switching frequency 1 MHz | f SW_BST Boost converter mode switching frequency 1 MHz |
| I VBAT | Leakage on VBAT pin | VBAT = 2.1 V; VBAT_UV = 2.3 V, T J = 25°C VSTOR = 0 V VBAT = 2.1 V; VBAT_UV = 2.3 V, -40°C < T J < 65°C, VSTOR = 0 V | 1 | 5 80 | nA nA | |
| I VSTOR | VSTOR Quiescent current Charger Shutdown in UV Condition | VIN_DC = 0V; VBAT < VBAT_UV = 2.4V; VSTOR = 2.2V, No load on VBAT | 330 | 750 | nA | |
| I VSTOR | VSTOR Quiescent current Charger Shutdown in OV Condition | VIN_DC = 0V, VBAT > VBAT_OV, VSTOR = 4.25, No load on VBAT | 570 | 1400 | nA | |
| V BAT_OV | Programmable voltage range for overvoltage threshold (Battery voltage is rising) | VSTOR increasing | 2.5 | 5.25 | V | |
| V BAT_OV_HYST | Battery voltage overvoltage hysteresis threshold (Battery voltage is falling), internal threshold | VSTOR decreasing | 18 | 35 | 89 | mV |
| V BAT_UV | Programmable voltage range for under voltage threshold (Battery voltage is falling) | VSTOR decreasing; VBAT_UV > V Bias | 2.2 | VBAT_OV | V | |
| V BAT_UV_HYST | Battery under voltage threshold hysteresis, internal thershold | VSTOR increasing | 40 | 80 | 125 | mV |
| V BAT_OK | Programmable voltage range for threshold voltage for high to low transition of digital signal indicating battery is OK, | VSTOR decreasing | VBAT_UV | VBAT_OV | V | |
| V BAT_OK_HYST | Programmable voltage range for threshold voltage for low to high transition of digital signal indicating battery is OK, | VSTOR increasing | 50 | VBAT_OV- VBAT_UV | mV | |
| V BAT_ACCURACY | Overall Accuracy for threshold values, UV, OV, VBAT_OK | Selected resistors are 0.1% tolerance | -5% | 5% |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VBAT_UV, VRDIV, | -0.3 | 5.5 | V |
| Peak Input Power, P IN_PK | OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBST (2) | 400 | mW | |
| Operating junction temperature range, T J | Operating junction temperature range, T J | -40 | 125 | °C |
| Storage temperature range, T stg | Storage temperature range, T stg | -65 | 150 | °C |
Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| V IN (DC) | DC input voltage into VIN_DC (1) | 0.13 | 3 | V | |
| VBAT | Battery voltage range (2) | 2.5 | 5.25 | V | |
| C HVR | Input capacitance | 4.23 | 4.7 | 5.17 | μF |
| C STOR | Storage capacitance | 4.23 | 4.7 | 5.17 | μF |
| C BAT | Battery pin capacitance or equivalent battery capacity | 100 | μF | ||
| C REF | Sampled reference storage capacitance | 9 | 10 | 11 | nF |
| R OC1 + R OC2 | Total resistance for setting for MPPT reference. | 18 | 20 | 22 | MΩ |
| R OK 1 + R OK 2 + R OK3 | Total resistance for setting reference voltage. | 9 | 10 | 11 | MΩ |
| R UV1 + R UV2 | Total resistance for setting reference voltage. | 9 | 10 | 11 | MΩ |
| R OV1 + R OV2 | Total resistance for setting reference voltage. | 9 | 10 | 11 | MΩ |
| L BST | Input inductance | 19.8 | 22 | 24.2 | μH |
| T A | Operating free air ambient temperature | -40 | 85 | °C | |
| T J | Operating junction temperature | -40 | 105 | °C |
Thermal Information
| THERMAL METRIC (1) | BQ25504 RGT (QFN) PINS | UNIT | |
|---|---|---|---|
| 16 | |||
| R θJA | Junction-to-ambient thermal resistance | 48.5 | °C/W |
| R θJC(top) | Junction-to-case (top) thermal resistance | 63.9 | °C/W |
| R θJB | Junction-to-board thermal resistance | 22 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 1.8 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 22 | °C/W |
| R θJC(bot) | Junction-to-case (bottom) thermal resistance | 6.5 | °C/W |
Typical Application
- A. Place close as possible to IC pin 15 (VSTOR) and pin 13 (VSS)
- B. See the Capacitor Selection section for guidance on sizing CSTOR
Figure 9-1. Typical Solar Application Circuit
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ25504 | Texas Instruments | VQFN (16) |
| BQ25504RGRR | Texas Instruments | VQFN-16 |
| BQ25504RGTR | Texas Instruments | 16-VFQFN Exposed Pad |
| BQ25504RGTR.B | Texas Instruments | — |
| BQ25504RGTT | Texas Instruments | 16-VFQFN Exposed Pad |
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