BQ25504
Ultra Low-Power Boost Converter With Battery Management For Energy Harvester ApplicationsThe BQ25504 is a ultra low-power boost converter with battery management for energy harvester applications from Texas Instruments. View the full BQ25504 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Ultra Low-Power Boost Converter With Battery Management For Energy Harvester Applications
Package
VQFN (16)
Overview
Part: BQ25504 — Texas Instruments
Type: Ultra-Low Power Boost Converter with Battery Management for Energy Harvesting Applications
Description: The BQ25504 is an intelligent integrated energy harvesting nano-power management solution designed to efficiently collect and manage microwatt to milliwatt level electrical energy from various DC sources, featuring a high-efficiency boost converter/charger that can start with VIN as low as 600mV and continue harvesting from VIN as low as 130mV.
Operating Conditions:
- Input voltage for continuous harvesting: VIN ≥ 130mV (typical)
- Input voltage for cold start: VIN ≥ 600mV (typical)
Absolute Maximum Ratings:
Key Specs:
- Ultra-low quiescent current: IQ < 330nA (typical)
- Continuous energy harvesting from low voltage input sources: VIN ≥ 130mV (typical)
- Cold start voltage: VIN ≥ 600mV (typical)
- Integrated dynamic maximum power point tracking (MPPT)
- User-programmable undervoltage and overvoltage levels for battery charging
- On-chip temperature sensor with programmable overtemperature shutdown
- Battery OK output pin with programmable thresholds and hysteresis
Features:
- Ultra-low power, high-efficiency DC/DC boost converter/charger
- Programmable dynamic maximum power point tracking (MPPT)
- Input voltage regulation function to prevent damage to the input source
- Energy can be stored in rechargeable Li-ion batteries, thin-film batteries, supercapacitors, or traditional capacitors
- Battery charging and protection
- Battery OK output pin
- Power loss pending, microcontroller with accompanying alarm function
- Can be used to enable or disable system load
Applications:
- Energy Harvesting
- Solar Chargers
- Thermoelectric Generator (TEG) Energy Harvesting
- Wireless Sensor Networks (WSN)
- Industrial Monitoring
- Environmental Monitoring
- Bridge and Structural Health Monitoring (SHM)
- Smart Building Controls
- Portable and Wearable Health Devices
- Entertainment System Remote Controls
Package:
- VQFN (16) - 3.00mm x 3.00mm
Features
- Ultra-low power, high-efficiency DC/DC boost converter/charger
- -Continuous energy harvesting from low voltage input sources: VIN ≥ 130mV (typical)
- -Ultra-low quiescent current: IQ < 330nA (typical)
- -Cold start voltage: VIN ≥ 600mV (typical)
- Programmable dynamic maximum power point tracking (MPPT)
- -Integrated dynamic maximum power point tracking function for optimal energy harvesting from various energy generation sources
- -Input voltage regulation function to prevent damage to the input source
- Energy storage
- -Energy can be stored in rechargeable Li-ion batteries, thin-film batteries, supercapacitors, or traditional capacitors
- Battery charging and protection
- -User-programmable undervoltage and overvoltage levels
- -On-chip temperature sensor with programmable overtemperature shutdown
- Battery status output
- -Battery OK output pin
- -Programmable thresholds and hysteresis
- -Power loss pending, microcontroller with accompanying alarm function
- -Can be used to enable or disable system load
Applications
- Energy Harvesting
- Solar Chargers
- Thermoelectric Generator (TEG) Energy Harvesting
- Wireless Sensor Networks (WSN)
- Industrial Monitoring
- Environmental Monitoring
- Bridge and Structural Health Monitoring (SHM)
- Smart Building Controls
- Portable and Wearable Health Devices
- Entertainment System Remote Controls
1
Pin Configuration
Pin Functions
Pin Functions
| PIN | PIN | I/O | DESCRIPTION |
|---|---|---|---|
| NAME | NO. | I/O | DESCRIPTION |
| AVSS | 12 | Supply | Signal ground connection for the device |
| LBST | 16 | Input | Inductor connection for the boost charger switching node. Connect a 22 μH inductor between this pin and pin 2 (VIN_DC). |
| OK_HYST | 9 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK hysteresis threshold. If not used, connect this pin to GND. |
| OK_PROG | 10 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK threshold. If not used, connect this pin to GND. |
| OT_PROG | 5 | Input | Digital Programming input for IC overtemperature threshold. Connect to GND for 60 C threshold or VSTOR for 120 C threshold. |
| VBAT | 14 | I/O | Connect a rechargeable storage element with at least 100 μF of equivalent capacitance to this pin. |
| VBAT_OK | 11 | Output | Digital output for battery good indicator. Internally referenced to the VSTOR voltage. Leave floating if not used. |
| VBAT_OV | 6 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VSTOR = VBAT overvoltage threshold. |
| VBAT_UV | 8 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT undervoltage threshold. The PFET between VBAT and VSTOR opens if the voltage on VSTOR is below this threshold. |
| VIN_DC | 2 | Input | DC voltage input from energy harvesters. Connect at least a 4.7 μF capacitor as close as possible between this pin and pin 1. |
| VOC_SAMP | 3 | Input | Sampling pin for MPPT network. Connect to the mid-point of external resistor divider between VIN_DC and GND for setting the MPP threshold voltage which will be stored on the VREF_SAMP pin. To disable the MPPT sampling circuit, connect to VSTOR. |
| VRDIV | 7 | Output | Resistor divider biasing voltage. |
| VREF_SAMP | 4 | Input | Connect a 0.01 μF low leakage capacitor from this pin to GND to store the voltage to which VIN_DC will be regulated. This voltage is provided by the MPPT sample circuit. When MPPT is disabled, either use an external voltage source to provide this voltage or tie this pin to GND to disable input voltage regulation (i.e. operate from a low impedance power supply). |
| VSS | 1 | Input | General ground connection for the device |
| VSS | 13 | Supply | General ground connection for the device |
| VSTOR | 15 | Output | Connection for the output of the boost charger, which is typically connected to the system load. Connect at least a 4.7 μF capacitor in parallel with a 0.1 μF capacitor as close as possible to between this pin and pin 1 (VSS). |
Electrical Characteristics
Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 μH, CHVR = 4.7 μF CSTOR= 4.7 μF.
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE |
| V IN(DC) | DC input voltage into VIN_DC | Cold-start completed | 130 | 3000 | mV | |
| I IN(DC) | Peak Current flowing from V IN into VIN_DC input | 0.5V < V IN < 3 V; VSTOR = 4.2 V | 200 | 300 | mA | |
| P IN | Input power range for normal charging | VBAT > VIN_DC; VIN_DC = 0.5 V | 0.01 | 300 | mW | |
| V IN(CS) | Cold-start Voltage. Input voltage that will start charging of VSTOR | VBAT < VBAT_UV; VSTOR = 0 V; 0°C < T A < 85°C | 600 | 700 | mV | |
| P IN(CS) | Minimum cold-start input power to start normal charging | VBAT < VSTOR (CHGEN) VIN_DC clamped to VIN_CS by cold start circuit VBAT = 100 μF ceramic | 15 | μW | ||
| V STOR_CHGEN | Voltage on VSTOR when cold start operation ends and normal charger operation begins | 1.6 | 1.77 | 1.95 | V | |
| R BAT(on) | Resistance of switch between VBAT and VSTOR when turned on. | VBAT = 4.2 V; VSTOR load = 50 mA | 2 | Ω | ||
| R DS(on) | Charger Low Side switch ON resistance | VBAT = 2.1 V | 2 | Ω | ||
| R DS(on) | VBAT = 4.2 V | 2 | ||||
| R DS(on) | Charger rectifier High Side switch ON resistance | VBAT = 2.1 V VBAT = 4.2 V | 5 5 | Ω | ||
| f SW_BST | Boost converter mode switching frequency | 1 | MHz | |||
| BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT |
| I VBAT | Leakage on VBAT pin | VBAT = 2.1 V; VBAT_UV = 2.3 V, T J = 25°C VSTOR = 0 V VBAT = 2.1 V; VBAT_UV = 2.3 V, -40°C < T J < 65°C, VSTOR = 0 V | 1 | 5 80 | nA nA | |
| I VSTOR | VSTOR Quiescent current Charger Shutdown in UV Condition | VIN_DC = 0V; VBAT < VBAT_UV = 2.4V; VSTOR = 2.2V, No load on VBAT | 330 | 750 | nA | |
| I VSTOR | VSTOR Quiescent current Charger Shutdown in OV Condition | VIN_DC = 0V, VBAT > VBAT_OV, VSTOR = 4.25, No load on VBAT | 570 | 1400 | nA | |
| V BAT_OV | Programmable voltage range for overvoltage threshold (Battery voltage is rising) | VSTOR increasing | 2.5 | 5.25 | V | |
| V BAT_OV_HYST | Battery voltage overvoltage hysteresis threshold (Battery voltage is falling), internal threshold | VSTOR decreasing | 18 | 35 | 89 | mV |
| V BAT_UV | Programmable voltage range for under voltage threshold (Battery voltage is falling) | VSTOR decreasing; VBAT_UV > V Bias | 2.2 | VBAT_OV | V | |
| V BAT_UV_HYST | Battery under voltage threshold hysteresis, internal thershold | VSTOR increasing | 40 | 80 | 125 | mV |
| V BAT_OK | Programmable voltage range for threshold voltage for high to low transition of digital signal indicating battery is OK, | VSTOR decreasing | VBAT_UV | VBAT_OV | V | |
| V BAT_OK_HYST | Programmable voltage range for threshold voltage for low to high transition of digital signal indicating battery is OK, | VSTOR increasing | 50 | VBAT_OV- VBAT_UV | mV | |
| V BAT_ACCURACY | Overall Accuracy for threshold values, UV, OV, VBAT_OK | Selected resistors are 0.1% tolerance | -5% | 5% | ||
| V BAT_OKH | VBAT OK (High) threshold voltage | Load = 10 μA | VSTOR- 200mV | V |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VBAT_UV, VRDIV, | -0.3 | 5.5 | V |
| Peak Input Power, P IN_PK | OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBST (2) | 400 | mW | |
| Operating junction temperature range, T J | Operating junction temperature range, T J | -40 | 125 | °C |
| Storage temperature range, T stg | Storage temperature range, T stg | -65 | 150 | °C |
Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| V IN (DC) | DC input voltage into VIN_DC (1) | 0.13 | 3 | V | |
| VBAT | Battery voltage range (2) | 2.5 | 5.25 | V | |
| C HVR | Input capacitance | 4.23 | 4.7 | 5.17 | μF |
| C STOR | Storage capacitance | 4.23 | 4.7 | 5.17 | μF |
| C BAT | Battery pin capacitance or equivalent battery capacity | 100 | μF | ||
| C REF | Sampled reference storage capacitance | 9 | 10 | 11 | nF |
| R OC1 + R OC2 | Total resistance for setting for MPPT reference. | 18 | 20 | 22 | M Ω |
| R OK 1 + R OK 2 + R OK3 | Total resistance for setting reference voltage. | 9 | 10 | 11 | M Ω |
| R UV1 + R UV2 | Total resistance for setting reference voltage. | 9 | 10 | 11 | M Ω |
| R OV1 + R OV2 | Total resistance for setting reference voltage. | 9 | 10 | 11 | M Ω |
| L BST | Input inductance | 19.8 | 22 | 24.2 | μH |
| T A | Operating free air ambient temperature | -40 | 85 | °C | |
| T J | Operating junction temperature | -40 | 105 | °C |
- (1) Maximum input power ≤ 300 mW. Cold start has been completed
- (2) VBAT_OV setting must be higher than VIN_DC
Thermal Information
| THERMAL METRIC (1) | BQ25504 QFN | UNIT | |
|---|---|---|---|
| 16 PINS | |||
| R θ JA | Junction-to-ambient thermal resistance | 48.5 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 63.9 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 22 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 1.8 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 22 | °C/W |
| R θ JC(bot) | Junction-to-case (bottom) thermal resistance | 6.5 | °C/W |
Typical Application
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ25504RGTR | Texas Instruments | 16-VFQFN Exposed Pad |
| BQ25504RGTT | Texas Instruments | 16-VFQFN Exposed Pad |
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