BQ25504
Ultra Low-Power Boost Converter With Battery Management For Energy Harvester ApplicationsThe BQ25504 is a ultra low-power boost converter with battery management for energy harvester applications from Texas Instruments. View the full BQ25504 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official BQ25504 datasheet (PDF) — the source this page was extracted from.
BQ25504 Key Specifications
| Parameter | Value |
|---|---|
| Cold-start voltage VIN(CS) | 600 mV typical, 700 mV maximum |
| Quiescent current IQ | < 330 nA (typical) |
| VIN_DC recommended range | 0.13–3 V |
| VBAT recommended range | 2.5–5.25 V |
| Recommended battery pin capacitance | ≥ 100 μF |
| MPPT reference resistor total (ROC1 + ROC2) | 20 MΩ nominal |
BQ25504 Overview
Part: BQ25504 (BQ25504RGTR) — Texas Instruments
Type: Ultra-Low-Power Boost Converter / Charger with Battery Management (Energy Harvesting)
Description: Ultra-low-power boost converter and charger with programmable MPPT that harvests energy from inputs as low as 130 mV (typical) after a 600 mV (typical) cold start, with IQ < 330 nA (typical).
Operating Conditions:
- DC input voltage (VIN_DC): 0.13–3 V (maximum input power ≤ 300 mW, after cold start is completed)
- Battery voltage (VBAT): 2.5–5.25 V
- Operating free-air ambient temperature: -40 to 85 °C
- Operating junction temperature: -40 to 105 °C
- Inductor LBST: 22 μH nominal; CSTOR and CHVR: 4.7 μF nominal
Absolute Maximum Ratings:
- Input voltage (VIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VBAT_UV, VRDIV, OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBST): -0.3 to 5.5 V
- Peak input power: 400 mW
- Operating junction temperature: -40 to 125 °C
- Storage temperature: -65 to 150 °C
Key Specs:
- Continuous harvesting from VIN ≥ 130 mV (typical)
- Cold-start voltage VIN(CS): 600 mV typical, 700 mV maximum
- Quiescent current IQ: < 330 nA (typical)
- VIN_DC recommended range: 0.13–3 V
- VBAT recommended range: 2.5–5.25 V
- Recommended battery pin capacitance: ≥ 100 μF
- MPPT reference resistor total (ROC1 + ROC2): 20 MΩ nominal
Features:
- Ultra-low-power, high-efficiency DC/DC boost converter/charger
- Programmable dynamic maximum power point tracking (MPPT)
- Input voltage regulation prevents damage to the input source
- Supports Li-ion batteries, thin-film batteries, supercapacitors, or conventional capacitors for storage
- User-programmable undervoltage and overvoltage levels
- On-chip temperature sensor with programmable overtemperature shutdown
- Battery-good output with programmable thresholds and hysteresis
- Power-fail-pending microcontroller alarm that can enable or disable the system load
Applications:
- Energy harvesting
- Solar chargers
- Thermoelectric generator (TEG) energy harvesting
- Wireless sensor networks
- Industrial and environmental monitoring
- Bridge and structural health monitoring
- Smart building control
- Portable and wearable health devices
- Entertainment system remote controls
Package:
- VQFN (16), 3.00 mm x 3.00 mm (RGT)
BQ25504 Features
- 1 · Ultra-Low-Power, High-Efficiency DC/DC Boost Converter / Charger
- -Continuous energy harvesting from low-voltage input sources: VIN ≥ 130mV (typical)
- -Ultra-low quiescent current: IQ < 330nA (typical)
- -Cold-start voltage: VIN ≥ 600mV (typical)
- Programmable Dynamic Maximum Power Point Tracking (MPPT)
- -Integrated dynamic MPPT function enables optimal energy harvesting from various energy generation sources
- -Input voltage regulation function prevents damage to the input source
- Energy Storage
- -Energy can be stored in rechargeable lithium-ion batteries, thin-film batteries, supercapacitors, or conventional capacitors
- Battery Charging and Protection
- -User-programmable undervoltage and overvoltage levels
- -On-chip temperature sensor with programmable overtemperature shutdown
- Battery Status Output
- -Battery-good output pin
- -Programmable thresholds and hysteresis
- -Power-fail-pending microcontroller alarm function
- -Can be used to enable or disable the system load
BQ25504 Applications
- Energy Harvesting
- Solar Chargers
- Thermoelectric Generator (TEG) Energy Harvesting
- Wireless Sensor Networks (WSN)
- Industrial Monitoring
- Environmental Monitoring
- Bridge and Structural Health Monitoring (SHM)
- Smart Building Control
- Portable and Wearable Health Devices
- Entertainment System Remote Controls
1
BQ25504 Pin Configuration
Pin Functions
| PIN - NAME | PIN - NO. | I/O | DESCRIPTION |
|---|---|---|---|
| AVSS | 12 | Supply | Signal ground connection for the device |
| LBST | 16 | Input | Inductor connection for the boost charger switching node. Connect a 22 μH inductor between this pin and pin 2 (VIN_DC). |
| OK_HYST | 9 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK hysteresis threshold. If not used, connect this pin to GND. |
| OK_PROG | 10 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK threshold. If not used, connect this pin to GND. |
| OT_PROG | 5 | Input | Digital Programming input for IC overtemperature threshold. Connect to GND for 60 C threshold or VSTOR for 120 C threshold. |
| VBAT | 14 | I/O | Connect a rechargeable storage element with at least 100 μF of equivalent capacitance to this pin. |
| VBAT_OK | 11 | Output | Digital output for battery good indicator. Internally referenced to the VSTOR voltage. Leave floating if not used. |
| VBAT_OV | 6 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VSTOR = VBAT overvoltage threshold. |
| VBAT_UV | 8 | Input | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT undervoltage threshold. The PFET between VBAT and VSTOR opens if the voltage on VSTOR is below this threshold. |
| VIN_DC | 2 | Input | DC voltage input from energy harvesters. Connect at least a 4.7 μF capacitor as close as possible between this pin and pin 1. |
| VOC_SAMP | 3 | Input | Sampling pin for MPPT network. Connect to the mid-point of external resistor divider between VIN_DC and GND for setting the MPP threshold voltage which will be stored on the VREF_SAMP pin. To disable the MPPT sampling circuit, connect to VSTOR. |
| VRDIV | 7 | Output | Resistor divider biasing voltage. |
| VREF_SAMP | 4 | Input | Connect a 0.01 μF low leakage capacitor from this pin to GND to store the voltage to which VIN_DC will be regulated. This voltage is provided by the MPPT sample circuit. When MPPT is disabled, either use an external voltage source to provide this voltage or tie this pin to GND to disable input voltage regulation (i.e. operate from a low impedance power supply). |
| VSS | 1 | Input | General ground connection for the device |
| VSS | 13 | Supply | General ground connection for the device |
| VSTOR | 15 | Output | Connection for the output of the boost charger, which is typically connected to the system load. Connect at least a 4.7 μF capacitor in parallel with a 0.1 μF capacitor as close as possible to between this pin and pin 1 (VSS). |
BQ25504 Electrical Characteristics
Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 μH, CHVR = 4.7 μF CSTOR= 4.7 μF.
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE | BOOST CONVERTER \ CHARGER STAGE |
| V IN(DC) | DC input voltage into VIN_DC | Cold-start completed | 130 | 3000 | mV | |
| I IN(DC) | Peak Current flowing from V IN into VIN_DC input | 0.5V < V IN < 3 V; VSTOR = 4.2 V | 200 | 300 | mA | |
| P IN | Input power range for normal charging | VBAT > VIN_DC; VIN_DC = 0.5 V | 0.01 | 300 | mW | |
| V IN(CS) | Cold-start Voltage. Input voltage that will start charging of VSTOR | VBAT < VBAT_UV; VSTOR = 0 V; 0°C < T A < 85°C | 600 | 700 | mV | |
| P IN(CS) | Minimum cold-start input power to start normal charging | VBAT < VSTOR (CHGEN) VIN_DC clamped to VIN_CS by cold start circuit VBAT = 100 μF ceramic | 15 | μW | ||
| V STOR_CHGEN | Voltage on VSTOR when cold start operation ends and normal charger operation begins | 1.6 | 1.77 | 1.95 | V | |
| R BAT(on) | Resistance of switch between VBAT and VSTOR when turned on. | VBAT = 4.2 V; VSTOR load = 50 mA | 2 | Ω | ||
| R DS(on) | Charger Low Side switch ON resistance | VBAT = 2.1 V | 2 | Ω | ||
| R DS(on) | VBAT = 4.2 V | 2 | ||||
| R DS(on) | Charger rectifier High Side switch ON resistance | VBAT = 2.1 V VBAT = 4.2 V | 5 5 | Ω | ||
| f SW_BST | Boost converter mode switching frequency | 1 | MHz | |||
| BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT | BATTERY MANAGEMENT |
| I VBAT | Leakage on VBAT pin | VBAT = 2.1 V; VBAT_UV = 2.3 V, T J = 25°C VSTOR = 0 V VBAT = 2.1 V; VBAT_UV = 2.3 V, -40°C < T J < 65°C, VSTOR = 0 V | 1 | 5 80 | nA nA | |
| I VSTOR | VSTOR Quiescent current Charger Shutdown in UV Condition | VIN_DC = 0V; VBAT < VBAT_UV = 2.4V; VSTOR = 2.2V, No load on VBAT | 330 | 750 | nA | |
| I VSTOR | VSTOR Quiescent current Charger Shutdown in OV Condition | VIN_DC = 0V, VBAT > VBAT_OV, VSTOR = 4.25, No load on VBAT | 570 | 1400 | nA | |
| V BAT_OV | Programmable voltage range for overvoltage threshold (Battery voltage is rising) | VSTOR increasing | 2.5 | 5.25 | V | |
| V BAT_OV_HYST | Battery voltage overvoltage hysteresis threshold (Battery voltage is falling), internal threshold | VSTOR decreasing | 18 | 35 | 89 | mV |
| V BAT_UV | Programmable voltage range for under voltage threshold (Battery voltage is falling) | VSTOR decreasing; VBAT_UV > V Bias | 2.2 | VBAT_OV | V | |
| V BAT_UV_HYST | Battery under voltage threshold hysteresis, internal thershold | VSTOR increasing | 40 | 80 | 125 | mV |
| V BAT_OK | Programmable voltage range for threshold voltage for high to low transition of digital signal indicating battery is OK, | VSTOR decreasing | VBAT_UV | VBAT_OV | V | |
| V BAT_OK_HYST | Programmable voltage range for threshold voltage for low to high transition of digital signal indicating battery is OK, | VSTOR increasing | 50 | VBAT_OV- VBAT_UV | mV | |
| V BAT_ACCURACY | Overall Accuracy for threshold values, UV, OV, VBAT_OK | Selected resistors are 0.1% tolerance | -5% | 5% | ||
| V BAT_OKH | VBAT OK (High) threshold voltage | Load = 10 μA | VSTOR- 200mV | V |
BQ25504 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VBAT_UV, VRDIV, | -0.3 | 5.5 | V |
| Peak Input Power, P IN_PK | OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBST (2) | 400 | mW | |
| Operating junction temperature range, T J | Operating junction temperature range, T J | -40 | 125 | °C |
| Storage temperature range, T stg | Storage temperature range, T stg | -65 | 150 | °C |
BQ25504 Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| V IN (DC) | DC input voltage into VIN_DC (1) | 0.13 | 3 | V | |
| VBAT | Battery voltage range (2) | 2.5 | 5.25 | V | |
| C HVR | Input capacitance | 4.23 | 4.7 | 5.17 | μF |
| C STOR | Storage capacitance | 4.23 | 4.7 | 5.17 | μF |
| C BAT | Battery pin capacitance or equivalent battery capacity | 100 | μF | ||
| C REF | Sampled reference storage capacitance | 9 | 10 | 11 | nF |
| R OC1 + R OC2 | Total resistance for setting for MPPT reference. | 18 | 20 | 22 | M Ω |
| R OK 1 + R OK 2 + R OK3 | Total resistance for setting reference voltage. | 9 | 10 | 11 | M Ω |
| R UV1 + R UV2 | Total resistance for setting reference voltage. | 9 | 10 | 11 | M Ω |
| R OV1 + R OV2 | Total resistance for setting reference voltage. | 9 | 10 | 11 | M Ω |
| L BST | Input inductance | 19.8 | 22 | 24.2 | μH |
| T A | Operating free air ambient temperature | -40 | 85 | °C | |
| T J | Operating junction temperature | -40 | 105 | °C |
- (1) Maximum input power ≤ 300 mW. Cold start has been completed
- (2) VBAT_OV setting must be higher than VIN_DC
BQ25504 Thermal Information
| THERMAL METRIC (1) | BQ25504 QFN - 16 PINS | UNIT | |
|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 48.5 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 63.9 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 22 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 1.8 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 22 | °C/W |
| R θ JC(bot) | Junction-to-case (bottom) thermal resistance | 6.5 | °C/W |
BQ25504 Typical Application
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ25504RGTR | Texas Instruments | 16-VFQFN Exposed Pad |
| BQ25504RGTT | Texas Instruments | 16-VFQFN Exposed Pad |
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All Boost Converters datasheetsAll Texas Instruments datasheets (2,437)
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