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W25Q256JVCIQ

Serial Flash Memory

The W25Q256JVCIQ is a serial flash memory from Winbond. View the full W25Q256JVCIQ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

W25Q256JVCIQ shares its datasheet with W25Q256JV, whose page lists every part number it covers.

Official W25Q256JVCIQ datasheet (PDF) — the source this page was extracted from.

Manufacturer

Winbond

Category

Memory ICs

Package

TFBGA-24 8x6mm

W25Q256JVCIQ Key Specifications

ParameterValue
InterfaceStandard/Dual/Quad SPI
Address Modes3-Byte and 4-Byte Address Modes
Memory Density256M-bit
Supply Voltage3V
Package Dimensions8x6mm

W25Q256JVCIQ Overview

Part: W25Q256JV — Winbond

Type: Serial Flash Memory

Description: The W25Q256JV is a 256M-bit (32M-byte) Serial Flash memory operating from a 2.7V to 3.6V supply, supporting Standard, Dual, and Quad SPI interfaces with clock frequencies up to 133MHz, enabling equivalent data transfer rates of 532MHz for Quad I/O.

Operating Conditions:

  • Supply voltage: 2.7V to 3.6V
  • Operating temperature: -40°C to +85°C
  • Max SPI clock frequency: 133MHz

Key Specs:

  • Capacity: 256M-bit / 32M-byte
  • Page size: 256-bytes
  • Sector erase size: 4KB
  • Block erase sizes: 32KB, 64KB
  • Continuous data transfer rate: 66MB/S
  • Program-Erase cycles: Min. 100K per sector
  • Data retention: More than 20-year
  • Power-down current: <1μA (typ.)

Features:

  • Standard SPI: CLK, /CS, DI, DO
  • Dual SPI: CLK, /CS, IO0, IO1
  • Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
  • 3 or 4-Byte Addressing Mode
  • Software & Hardware Reset
  • 266/532MHz equivalent Dual/Quad SPI
  • Quad Peripheral Interface
  • Allows true XIP (execute in place) operation
  • Uniform Sector/Block Erase (4K/32K/64K-Byte)
  • Program 1 to 256 byte per programmable page
  • Erase/Program Suspend & Resume
  • Software Write-Protect
  • Power Supply Lock-Down
  • Special OTP protection
  • Top/Bottom, Complement Array Protection

Package:

  • WSON 8x6-mm (8-Pad)
  • SOIC 300-mil (16-Pin)
  • TFBGA 8x6-mm (24-Ball, 5x5 or 6x4 Ball Array)

W25Q256JVCIQ Features

  • Software Write-Protect
  • Power Supply Lock-Down
  • Special OTP protection
  • Top/Bottom, Complement array protection
  • Individual Block/Sector array protection
  • 64-Bit Unique ID for each device
  • Discoverable Parameters (SFDP) Register
  • 3X256-Bytes Security Registers with OTP locks
  • Volatile & Non-volatile Status Register Bits

W25Q256JVCIQ Pin Configuration

W25Q256JV is offered in an 8-pad WSON 8x6-mm (package code E), a 16-pin SOIC 300-mil (package code F) and two 24-ball 8x6-mm TFBGA (package code B & C) packages as shown in Figure 1a-c respectively. Package diagrams and dimensions are illustrated at the end of this datasheet.

W25Q256JVCIQ Electrical Characteristics

PARAMETERSYMBOLCONDITIONSSPECSPECSPECUNIT
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNIT
Input CapacitanceCIN (1)VIN = 0V6pF
Output CapacitanceCout (1)VOUT = 0V8pF
Input LeakageI LI±2μA
I/O LeakageILO±2μA
Standby CurrentICC1/CS = VCC, VIN = GND or VCC1060μA
Power-down CurrentICC2/CS = VCC, VIN = GND or VCC120μA
Current Read Data / Dual /Quad 50MHz (2)ICC3C = 0.1 VCC / 0.9 VCC DO = Open15mA
Current Read Data / Dual Output Read/Quad Output Read 104MHz (2)ICC3C = 0.1 VCC / 0.9 VCC DO = Open20mA
Current Write Status RegisterICC4/CS = VCC2025mA
Current Page ProgramICC5/CS = VCC2025mA
Current Sector/Block EraseICC6/CS = VCC2025mA
Current Chip EraseICC7/CS = VCC2025mA
Input Low VoltageVIL-0.5VCC x 0.3V
Input High VoltageVIHVCC x 0.7VCC + 0.4V
Output Low VoltageVOLIOL = 100 μA0.2V
Output High VoltageVOHIOH = -100 μAVCC - 0.2V
  1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3.0V.

  2. Checker Board Pattern.

  • 80 - Revision B

W25Q256JVCIQ Absolute Maximum Ratings

PARAMETERSSYMBOLCONDITIONSRANGEUNIT
Supply VoltageVCC-0.6 to +4.6V
Voltage Applied to Any PinVIORelative to Ground-0.6 to VCC+0.4V
Transient Voltage on any PinVIOT<20nS Transient Relative to Ground-2.0 to VCC+2.0V
Storage TemperatureTSTG-65 to +150°C
Lead TemperatureTLEADSee Note (2)°C
Electrostatic Discharge VoltageVESDHuman Body Model (3)-2000 to +2000V
  1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
  2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
  3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
W25Q256JVWinbond—
W25Q256JVBIQWinbondTFBGA-24 8x6mm
W25Q256JVEIQWinbondWSON-8 8x6mm
W25Q256JVFIQWinbond—
W25Q256JVPIQWinbond8-pad WSON 8x6-mm
W25Q256JWPIQWinbond

Other Memory ICs

All Memory ICs datasheetsAll Winbond datasheets (73)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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