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TLV2374-EP

Operational Amplifier

The TLV2374-EP is a operational amplifier from Texas Instruments. View the full TLV2374-EP datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

Operational Amplifier

Overview

Part: TLV237x — Texas Instruments

Type: Operational Amplifier

Description: The TLV237x is a single-supply operational amplifier family featuring rail-to-rail input and output, a 3 MHz wide bandwidth, and a high slew rate of 2.4 V/μs. It operates from a 2.7 V to 16 V supply and provides a high output drive of 105 mA.

Operating Conditions:

  • Supply voltage: 2.7–16 V
  • Operating temperature: -40 to 125 °C
  • Common-mode input voltage: 0 to V DD V

Absolute Maximum Ratings:

  • Max supply voltage: 16.5 V
  • Max continuous current: 100 mA
  • Max junction/storage temperature: 150 °C

Key Specs:

  • Bandwidth: 3 MHz
  • Slew rate: 2.4 V/μs
  • Output drive: 105 mA
  • Supply current per channel: 550 μA
  • Input bias current: 1 pA
  • Input noise voltage: 39 nV/√Hz
  • Input offset voltage: 500 μV (V DD = 2.7 to 16 V)

Features:

  • Rail-to-rail input and output
  • Low-power shutdown mode
  • Unit-gain stable
  • CMOS input characteristics

Applications:

  • White goods
  • Handheld test equipment
  • Portable blood glucose meters
  • Remote sensing
  • Active filters
  • Industrial automation
  • Battery-powered electronics

Package:

  • PDIP (8-pin, 14-pin, 16-pin)
  • SOIC (8-pin, 14-pin, 16-pin)
  • SOT-23 (5-pin, 6-pin)
  • VSSOP (8-pin, 10-pin)
  • TSSOP (14-pin, 16-pin)

Pin Configuration

TLV2370 DBV Package 6-Pin SOT-23 Top View

Electrical Characteristics

at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).

PARAMETERTESTCONDITIONSMINTYPMAXUNIT
DC PERFORMANCEDC PERFORMANCEDC PERFORMANCEDC PERFORMANCEDC PERFORMANCEDC PERFORMANCEDC PERFORMANCEDC PERFORMANCE
V OSInput offset voltageAt T A = 25°C, V IC = V DD /2, V O = V DD /2, R S = 50 ΩAt T A = 25°C, V IC = V DD /2, V O = V DD /2, R S = 50 Ω24.5mV
V OSInput offset voltageAt T A = -40°C to +125°C, V IC = V DD /2, V O = V DD /2, R S = 50 ΩAt T A = -40°C to +125°C, V IC = V DD /2, V O = V DD /2, R S = 50 Ω6mV
dV OS /dTOffset voltage driftAt T A = 25°C, V IC = V DD /2, V O = V DD /2, R S = 50 ΩAt T A = 25°C, V IC = V DD /2, V O = V DD /2, R S = 50 Ω2μV/°C
dV OS /dTOffset voltage driftV DD = 2.7 V, R S = 50 ΩV IC = 0 to V DD5068
dV OS /dTOffset voltage driftV DD = 2.7 V, R S = 50 ΩAt T A = -40°C to +125°C, V IC = 0 to V DD49
dV OS /dTOffset voltage driftV DD = 2.7 V, R S = 50 ΩV IC = 0 to V DD - 1.35 V5670
dV OS /dTOffset voltage driftV DD = 2.7 V, R S = 50 ΩAt T A = -40°C to +125°C, V IC = 0 to V DD - 1.35 V54
dV OS /dTOffset voltage driftV DD = 5 V, R S = 50 ΩV IC = 0 to V DD5572
dV OS /dTCommon-mode rejectionV DD = 5 V, R S = 50 ΩAt T A = -40°C to +125°C, V IC = 0 to V DD54
dV OS /dTratioV DD = 5 V, R S = 50 ΩV IC = 0 to V DD - 1.35 V6780dB
dV OS /dTOffset voltage driftV DD = 5 V, R S = 50 ΩAt T A = -40°C to +125°C, V IC = 0 to V DD - 1.35 V64
dV OS /dTOffset voltage driftV DD = 15 V, R S = 50 ΩV IC = 0 to V DD6482
dV OS /dTOffset voltage driftV DD = 15 V, R S = 50 ΩAt T A = -40°C to +125°C, V IC = 0 to V DD63
dV OS /dTOffset voltage driftV DD = 15 V, R S = 50 ΩV IC = 0 to V DD - 1.35 V6784
dV OS /dTOffset voltage driftV DD = 15 V, R S = 50 ΩAt T A = -40°C to +125°C, V IC = 0 to V DD - 1.35 V66
A VDLarge-signal differential voltage amplificationV DD = 2.7 V, V O(PP) = V DD /2, R L = 10 k Ω98106dB
A VDLarge-signal differential voltage amplificationV DD = 2.7 V, V O(PP) = V DD /2, R L = 10 k ΩAt T A = -40°C to +125°C76dB
A VDLarge-signal differential voltage amplificationV DD = 5 V, V O(PP) = V DD /2, R L = 10 k Ω100110dB
A VDLarge-signal differential voltage amplificationV DD = 5 V, V O(PP) = V DD /2, R L = 10 k ΩAt T A = -40°C to +125°C86dB
A VDLarge-signal differential voltage amplificationV DD = 15 V, V O(PP) = V DD /2, R L = 10 k Ω8183dB
A VDLarge-signal differential voltage amplificationV DD = 15 V, V O(PP) = V DD /2, R L = 10 k ΩAt T A = -40°C to +125°C79dB
INPUT CHARACTERISTICSINPUT CHARACTERISTICSINPUT CHARACTERISTICSINPUT CHARACTERISTICSINPUT CHARACTERISTICSINPUT CHARACTERISTICSINPUT CHARACTERISTICSINPUT CHARACTERISTICS
I OSInput offset currentV DD = 15 V, V IC = V O = V DD /2160pA
I OSInput offset currentAt TA = 70°C At T A = 125°C100 1000pA
I BInput bias currentV DD = 15 V, V IC = V O = V DD /2160pA
I BInput bias currentV DD = 15 V, V IC = V O = V DD /2At T A = 70°C100pA
I BDifferential input resistanceA1000G Ω
Common-mode input capacitancef = 21 kHz8pF

at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUTPUT CHARACTERISTICS

IOL = 5 mA

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V DD = 2.7 V
V DD = 5 V
V DD = 15 V
At T A = 25°C, V IC = V DD /2, I OH = - 1 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OH = - 1 mA
At T A = 25°C, V IC = V DD /2, I OH = - 1 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OH = - 1 mA
At T A = 25°C, V IC = V DD /2, I OH = - 1 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OH = - 1 mA
2.55
2.48
4.9
4.85
14.92
14.9
2.58
4.93
14.96
V OHHigh-level output voltageV DD = 2.7 V
V DD = 5 V
V DD = 15 V
V DD = 2.7 V
V DD = 5 V
V DD = 15 V
At T A = 25°C, V IC = V DD /2, I OH = - 5 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OH = - 5 mA
At T A = 25°C, V IC = V DD /2, I OH = - 5 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OH = - 5 mA
At T A = 25°C, V IC = V DD /2, I OH = - 5 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OH = - 5 mA
At T A = 25°C, V IC = V DD /2, I OL = 1 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OL = 1 mA
At T A = 25°C, V IC = V DD /2, I OL = 1 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OL = 1 mA
At T A = 25°C, V IC = V DD /2, I OL = 1 mA
At T A = -40°C to +125°C, V IC = V DD /2, I = 1 mA
1.9
1.6
4.6
4.5
14.7
14.6
2
4.68
14.8
0.1
0.05
0.05
0.15
0.22
0.1
0.15
0.08
0.1
V
V OLLow-level output voltageV DD = 2.7 V
V DD = 5 V
OL At T A = 25°C, V IC = V DD /2, I OL = 5 mA
At T A = -40°C to +125°C, V IC = V DD /2, I OL = 5 mA
At T A = 25°C, V IC = V DD /2, I OL = 5 mA
At T A = -40°C to +125°C, V IC = V DD /2,
0.52
0.28
0.7
1.1
0.4
0.5
V

  • ZHCSHJ3F-MARCH ZHCSHJ3F-MARCH ZHCSHJ3F-MARCH
  • www.ti.com.cn 2001-REVISED AUGUST
  • Electrical Characteristics (continued)
  • at T A = 25°C, V DD = 2.7 V, 5 V, and 15 V (unless otherwise TEST CONDITIONS At T A = 25°C, 5 mA noted). V IC = V DD /2, I OL = TYP 0.19
  • V DD = 15 V At T A = -40°C to +125°C, V IC = V DD /2, I OL = 5 mA 0.35
  • V DD = 2.7 V, V O = 0.5 V from rail Positive rail 4
  • V DD = 2.7 V, V O = 0.5 V from rail Negative rail 5
  • Output current V DD = 5 V, V O = 0.5 V from rail Positive rail 7
  • I O V DD = 5 V, V O = 0.5 V from rail Negative rail 8
  • V DD = 15 V, V O = 0.5 V from rail Positive rail 16
  • V DD = 15 V, V O = 0.5 V from rail Negative rail 15

at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).

PARAMETERTESTCONDITIONSMINTYPMAXUNIT
POWER SUPPLYPOWER SUPPLYPOWER SUPPLYPOWER SUPPLYPOWER SUPPLYPOWER SUPPLYPOWER SUPPLYPOWER SUPPLY
I DDSupply current (per channel)V DD = 2.7 V, V O = V DD /2V DD = 2.7 V, V O = V DD /2470560μA
I DDSupply current (per channel)V DD = 5 V, V O = V DD /2V DD = 5 V, V O = V DD /2550660μA
I DDSupply current (per channel)V DD = 15 V, V O = V DD /2At T A = 25°C750900μA
I DDSupply current (per channel)V DD = 15 V, V O = V DD /2At T A = -40°C to +125°C1200μA
PSRRPower-supply rejection ratio ( Δ V DD / Δ V IO )V DD = 2.7 V to 15 V, V IC = V DD /2, no loadAt T A = 25°C7080dB
PSRRPower-supply rejection ratio ( Δ V DD / Δ V IO )V DD = 2.7 V to 15 V, V IC = V DD /2, no loadAt T A = -40°C to +125°C65dB
DYNAMIC PERFORMANCEDYNAMIC PERFORMANCEDYNAMIC PERFORMANCEDYNAMIC PERFORMANCEDYNAMIC PERFORMANCEDYNAMIC PERFORMANCEDYNAMIC PERFORMANCEDYNAMIC PERFORMANCE
UGBWUnity gain bandwidthV DD = 2.7 VR L = 2 k Ω , C L = 10 pF2.4MHz
UGBWUnity gain bandwidthV DD = 5 V to 15 VR L = 2 k Ω , C L = 10 pF3MHz
SRSlew rate at unity gainV DD = 2.7 VAt T A = 25°C, V O(PP) = V DD /2, C L = 50 pF, R L = 10 k Ω1.42V/μs
SRSlew rate at unity gainV DD = 2.7 VAt T A = -40°C to +125°C, V O(PP) = V DD /2, C L = 50 pF, R L = 10 k Ω1V/μs
SRSlew rate at unity gainV DD = 5 VAt T A = 25°C, V O(PP) = V DD /2, C L = 50 pF, R L = 10 k Ω1.62.4V/μs
SRSlew rate at unity gainV DD = 5 VAt T A = -40°C to +125°C, V O(PP) = V DD /2, C L = 50 pF, R L = 10 k Ω1.2V/μs
SRSlew rate at unity gainV DD = 15 VAt T A = 25°C, V O(PP) = V DD /2, C L = 50 pF, R L = 10 k Ω1.92.1V/μs
SRSlew rate at unity gainV DD = 15 VAt T A = -40°C to +125°C, V O(PP) = V DD /2, C L = 50 pF, R L = 10 k Ω1.4V/μs
φ mPhase marginR L = 2 k Ω , C L = 100 pFR L = 2 k Ω , C L = 100 pF65°
φ mGain marginR L = 2 k Ω , C L = 10 pFR L = 2 k Ω , C L = 10 pF18dB
t sSettling timeV DD = 2.7 V, V (STEP)PP = 1 V, A V = - 1, C L = 10 pF, R L = 2 k Ω , 0.1%V DD = 2.7 V, V (STEP)PP = 1 V, A V = - 1, C L = 10 pF, R L = 2 k Ω , 0.1%2.9μs
t sSettling timeV DD = 5 V, 15 V, V (STEP)PP = 1 V, A V = - 1, C L = 47 pF, R L = 2 k Ω , 0.1%V DD = 5 V, 15 V, V (STEP)PP = 1 V, A V = - 1, C L = 47 pF, R L = 2 k Ω , 0.1%2μs

at TA = 25°C, VDD = 2.7 V, 5 V, and 15 V (unless otherwise noted).

PARAMETERPARAMETERTEST CONDITIONSTEST CONDITIONSMINTYPMAXUNIT
NOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCENOISE, DISTORTION PERFORMANCE
THD + NTotal harmonic distortionV DD = 2.7 VV O(PP) = V DD /2 V, R L = 2 k Ω , f = 10 kHz, A V = 10.02%
THD + NV DD = 2.7 VV O(PP) = V DD /2 V, R L = 2 k Ω , f = 10 kHz, A V = 100.05%
THD + NV DD = 2.7 VV O(PP) = V DD /2 V, R L = 2 k Ω , f = 10 kHz, A V = 1000.18%
THD + Nplus noiseV DD = 5 V, 15 VV O(PP) = V DD /2 V, R L = 2 k Ω , f = 10 kHz, A V = 10.02%
THD + NV DD = 5 V, 15 VV O(PP) = V DD /2 V, R L = 2 k Ω , f = 10 kHz, A V = 100.09%
THD + NV DD = 5 V, 15 VV O(PP) = V DD /2 V, R L = 2 k Ω , f = 10 kHz, A V = 1000.5%
V nEquivalent input noisef = 1 kHzf = 1 kHz39nV/ √ Hz
V nvoltagef = 10 kHzf = 10 kHz35nV/ √ Hz
I nEquivalent input noise currentf = 1 kHzf = 1 kHz0.6fA/ √ Hz
SHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICSSHUTDOWN CHARACTERISTICS
I DD(SHDN)Supply current in shutdown mode (TLV2370, TLV2373, TLV2375) (per channel)V DD = 2.7 V, 5 V, SHDN = 0 VAt T A = 25°C2530μA
I DD(SHDN)V DD = 2.7 V, 5 V, SHDN = 0 VAt T A = -40°C to +125°C35μA
I DD(SHDN)V DD = 15 V, SHDN = 0 VAt T A = 25°C4045μA
I DD(SHDN)V DD = 15 V, SHDN = 0 VAt T A = -40°C to +125°C50μA
t (on)Amplifier turnon time (1)R L = 2 k ΩR L = 2 k Ω0.8μs
t (off)Amplifier turnoff time (1)R L = 2 k ΩR L = 2 k Ω1μs

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
VoltageSupply voltage, V DD (2)16.5V
VoltageDifferential input voltage, V ID-V DDV DDV
VoltageInput voltage, V I (2)-0.2V DD + 0.2V
Input current, I IN-1010mA
Output current, I O-100100mA
Operating free-air temperature, T A : I-suffix-40125°C
Maximum junction temperature, T J150°C
Storage temperature, T stg-65150°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted).

MINMAXUNIT
Supply voltage, V DDSingle supply2.716V
Supply voltage, V DDSplit supply±1.35±8V
Common-mode input voltage, V CMCommon-mode input voltage, V CM0V DDV
Operating free-air temperature, T AI-suffix-40125°C
Turnon voltage (shutdown pin voltage level), V (ON) , relative to GND pin voltageTurnon voltage (shutdown pin voltage level), V (ON) , relative to GND pin voltage2V
Turnoff (shutdown pin voltage level), V (OFF) , relative to GND pin voltageTurnoff (shutdown pin voltage level), V (OFF) , relative to GND pin voltage0.8V

Thermal Information

TLV2370TLV2370TLV2370
THERMAL METRIC (1)THERMAL METRIC (1)DBV (SOT-23)D (SOIC)P (PDIP)
6 PINS8 PINS8 PINS
R θ JAJunction-to-ambient thermal resistance228.5138.449.2
R θ JC(top)Junction-to-case (top) thermal resistance99.189.539.4
R θ JBJunction-to-board thermal resistance54.678.626.4
ψ JTJunction-to-top characterization parameter7.729.915.4
ψ JBJunction-to-board characterization parameter53.878.126.3
R θ JC(bot)Junction-to-case (bottom) thermal resistancen/an/an/a

Typical Application

When designing for low power, choose system components carefully. To minimize current consumption, select large-value resistors. Any resistors react with stray capacitance in the circuit and the input capacitance of the operational amplifier. These parasitic RC combinations affect the stability of the overall system. Use of a feedback capacitor assures stability and limits overshoot or gain peaking.

Related Variants

The following components are covered by the same datasheet.

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