STM32WB55XX

Part: STM32WB55xx STM32WB35xx from STMicroelectronics

Type: Multiprotocol Wireless 32-bit Microcontroller (MCU)

Description: A dual-core 32-bit Arm Cortex-M4 MCU with FPU running up to 64 MHz, featuring up to 1 MB Flash and 256 KB SRAM, integrated Bluetooth 5.4 and 802.15.4 radio, and operating from 1.71 V to 3.6 V.

Operating Conditions:

• Supply voltage: 1.71 to 3.6 V
• Operating temperature: -40 to 85/105 °C
• Max CPU frequency: 64 MHz
• Radio standards: Bluetooth 5.4, IEEE 802.15.4-2011

Absolute Maximum Ratings:

• Max supply voltage: 4.0 V (VDD, VDDA, VDDUSB, VDDIO2, VDD_RF)
• Max continuous current: 120 mA (Total current into VDD)
• Max junction temperature: 125 °C

Key Specs:

• CPU: Arm 32-bit Cortex-M4 with FPU, up to 64 MHz
• Flash memory: Up to 1 MB
• SRAM: Up to 256 KB (including 64 KB with hardware parity check)
• Bluetooth Low Energy RX sensitivity: -96 dBm (at 1 Mbps)
• 802.15.4 RX sensitivity: -100 dBm
• Programmable RF output power: Up to +6 dBm
• ADC: 12-bit, 4.26 Msps, up to 16-bit with hardware oversampling
• Shutdown mode current: 13 nA
• Active-mode MCU current: < 53 μA / MHz (when RF and SMPS on)

Features:

• Dual-core architecture: Arm Cortex-M4 (application) and dedicated Arm Cortex-M0+ (radio layer)
• Integrated balun to reduce BOM
• High efficiency embedded SMPS step-down converter
• Hardware encryption (AES 256-bit, PKA), True Random Number Generator (RNG)
• Rich peripherals: USB 2.0 FS, 2x SPI, 2x I2C, USART, LPUART, SAI, QSPI, LCD controller, Touch sensing controller
• OTA (over the air) Bluetooth Low Energy and 802.15.4 update support

Applications:

Package:

• VFQFPN68 8 x 8 mm solder pad
• UFBGA129 0.5 mm pitch
• UFQFPN48 7 x 7 mm solder pad
• WLCSP100 0.4 mm pitch

• Include ST state-of-the-art patented technology
• Radio
• -2.4 GHz
• -RF transceiver supporting Bluetooth ® 5.4 specification, IEEE 802.15.4-2011 PHY and MAC, supporting Thread 1.3 and Zigbee ® 3.0
• -RX sensitivity: -96 dBm (Bluetooth ® Low Energy at 1 Mbps), -100 dBm (802.15.4)
• -Programmable output power up to +6 dBm with 1 dB steps
• -Integrated balun to reduce BOM
• -Support for 2 Mbps
• -Support GATT caching
• -Support EATT (enhanced ATT)
• -Support advertising extension
• -Dedicated Arm ® 32-bit Cortex ® M0+ CPU for real-time Radio layer
• -Accurate RSSI to enable power control
• -Suitable for systems requiring compliance with radio frequency regulations ETSI EN 300 328, EN 300 440, FCC CFR47 Part 15 and ARIB STD-T66
• -Support for external PA
• -Available integrated passive device (IPD) companion chip for optimized matching solution (MLPF-WB-01E3, or MLPF-WB55-02E3, or MLPF-WB-02D3)
• Ultra-low-power platform
• -1.71 to 3.6 V power supply
• -- 40 °C to 85 / 105 °C temperature ranges
• -13 nA shutdown mode
• -600 nA Standby mode + RTC + 32 KB RAM
• -2.1 μA Stop mode + RTC + 256 KB RAM
• -Active-mode MCU: < 53 μA / MHz when RF and SMPS on

October 2024

• -Internal low-power 32 kHz (±5%) RC (LSI1)

DS11929 Rev 17

• -Internal low-power 32 kHz (stability ±500 ppm) RC (LSI2)
• -Internal multispeed 100 kHz to 48 MHz oscillator, auto-trimmed by LSE (better than ±0.25% accuracy)
• -High speed internal 16 MHz factory trimmed RC (±1%)
• -2x PLL for system clock, USB, SAI, ADC

The RF block contains dedicated pins, listed in Table 4 .

:

Table 4. RF pin list

The definition and values of input/output AC characteristics are given in Table 74 .

Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions .

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Table 74. I/O AC characteristics (1)(2)

1. This value represents the I/O capability but the maximum system frequency is limited to 64 MHz.

Stresses above the absolute maximum ratings listed in Table 20 , Table 21 and Table 22 may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Device mission profile (application conditions) is compliant with JEDEC JESD47 Qualification Standard, extended mission profiles are available on demand.

168

Table 20. Voltage characteristics (1)

1. VIN maximum must always be respected. Refer to Table 21 for the maximum allowed injected current values.
2. This formula must be applied only on the power supplies related to the IO structure described in the pin definition table.
3. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
4. Include VREF- pin.

Table 21. Current characteristics

1. When several inputs are submitted to a current injection, the maximum ∑ |I INJ(PIN) | is the absolute sum of the negative injected currents (instantaneous values).

Table 22. Thermal characteristics

Table 22. Thermal characteristics

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The maximum chip junction temperature (T J max) must never exceed the values given in Table 24: General operating conditions .

The maximum chip-junction temperature, T J max, in degrees Celsius, can be calculated using the equation:T _ { J } max = T _ { A } max + ( P _ { D } max × Θ _ { J A } )$

The schematic in Figure 4 and the external components listed in Table 4 are purely indicative. For more details refer to the 'Reference design' provided in separate documents.

Note:

Figure 4. External components for the RF part

Table 5. Typical external components

For more details refer to AN5165 'Development of RF hardware using STM32WB microcontrollers' available on www.st.com.

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.