STM32WB55RG
The STM32WB55RG is an electronic component from STMicroelectronics. View the full STM32WB55RG datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
STM32WB55RG shares its datasheet with STM32WB55CGU6, whose page lists every part number it covers.
Official STM32WB55RG datasheet (PDF) — the source this page was extracted from.
Manufacturer
STMicroelectronicsSTM32WB55RG Key Specifications
| Parameter | Value |
|---|---|
| Total VDD source current | 130 mA max |
| Output current sunk/sourced per I/O pin | 20 mA max |
| Total output current sunk/sourced by all I/Os | 100 mA max |
| Internal AHB/APB clock frequency | 0 to 64 MHz |
| Analog supply voltage (VDDA) | 1.62 to 3.6 V (ADC or COMP used) |
| Backup supply voltage (VBAT) | 1.55 to 3.6 V |
| RF TX current | 5.2 mA at 0 dBm |
| RF RX current | 4.5 mA |
STM32WB55RG Overview
Part: STM32WB55CGU6 — STMicroelectronics
Type: Multiprotocol Wireless 32-bit MCU
Description: Dual-core wireless microcontroller with an Arm Cortex-M4 CPU running up to 64 MHz and a dedicated Cortex-M0+ radio coprocessor supporting Bluetooth 5.4 and IEEE 802.15.4 / Zigbee / Thread, operating from 1.71 to 3.6 V.
Operating Conditions:
- Supply voltage: 1.71 to 3.6 V (VDD)
- Operating temperature: -40 to 85 °C (suffix 6, maximum power dissipation)
- Maximum clock frequency: 64 MHz (AHB/APB1/APB2)
Absolute Maximum Ratings:
- Max supply voltage: 4.0 V (external main supply voltage VDDX - VSS)
- Max continuous current: 130 mA (total current into sum of all VDD power lines / out of sum of all VSS lines)
- Max junction/storage temperature: 130 °C max junction temperature (-65 to +150 °C storage temperature)
Key Specs:
- Total VDD source current: 130 mA max
- Output current sunk/sourced per I/O pin: 20 mA max
- Total output current sunk/sourced by all I/Os: 100 mA max
- Internal AHB/APB clock frequency: 0 to 64 MHz
- Analog supply voltage (VDDA): 1.62 to 3.6 V (ADC or COMP used)
- Backup supply voltage (VBAT): 1.55 to 3.6 V
- RF TX current: 5.2 mA at 0 dBm
- RF RX current: 4.5 mA
Features:
- 2.4 GHz RF transceiver supporting Bluetooth 5.4, IEEE 802.15.4-2011, Zigbee 3.0, and Thread 1.3
- Dual Arm architecture: Cortex-M4 CPU with FPU up to 64 MHz and Cortex-M0+ network coprocessor
- Built-in balun and high-efficiency embedded SMPS step-down converter with bypass mode
- Up to 1 MB Flash memory and up to 256 KB SRAM (64 KB with parity check)
- 12-bit ADC up to 4.26 Msps (up to 16-bit with hardware oversampling) and 2 ultra-low-power comparators
- Hardware crypto: 3x AES up to 256-bit, PKA, RNG, and secure firmware installation (SFI)
- Rich digital interfaces: USB 2.0 Full Speed (crystal-less), Quad-SPI, 2x SPI, 2x I2C, USART, LPUART, SAI
Applications:
- Bluetooth Low Energy and IEEE 802.15.4 connected devices
- Home automation, smart lighting, and building automation (Zigbee/Thread)
- Wearable electronics and medical devices
- Industrial IoT sensors and asset tracking
Package:
- UFQFPN48 (7 x 7 mm)
- VFQFPN68 (8 x 8 mm)
- WLCSP100 (0.4 mm pitch)
- UFBGA129 (0.5 mm pitch)
STM32WB55RG Features
- Include ST state-of-the-art patented technology
- Radio
- -2.4 GHz
- -RF transceiver supporting Bluetooth ® 5.4 specification, IEEE 802.15.4-2011 PHY and MAC, supporting Thread 1.3 and Zigbee ® 3.0
- -RX sensitivity: -96 dBm (Bluetooth ® Low Energy at 1 Mbps), -100 dBm (802.15.4)
- -Programmable output power up to +6 dBm with 1 dB steps
- -Integrated balun to reduce BOM
- -Support for 2 Mbps
- -Support GATT caching
- -Support EATT (enhanced ATT)
- -Support advertising extension
- -Dedicated Arm ® 32-bit Cortex ® M0+ CPU for real-time Radio layer
- -Accurate RSSI to enable power control
- -Suitable for systems requiring compliance with radio frequency regulations ETSI EN 300 328, EN 300 440, FCC CFR47 Part 15 and ARIB STD-T66
- -Support for external PA
- -Available integrated passive device (IPD) companion chip for optimized matching solution (MLPF-WB-01E3, or MLPF-WB55-02E3, or MLPF-WB-02D3)
- Ultra-low-power platform
- -1.71 to 3.6 V power supply
- -- 40 °C to 85 / 105 °C temperature ranges
- -13 nA shutdown mode
- -600 nA Standby mode + RTC + 32 KB RAM
- -2.1 μA Stop mode + RTC + 256 KB RAM
- -Active-mode MCU: < 53 μA / MHz when RF and SMPS on
October 2024
- -Internal low-power 32 kHz (±5%) RC (LSI1)
DS11929 Rev 17
- -Internal low-power 32 kHz (stability ±500 ppm) RC (LSI2)
- -Internal multispeed 100 kHz to 48 MHz oscillator, auto-trimmed by LSE (better than ±0.25% accuracy)
- -High speed internal 16 MHz factory trimmed RC (±1%)
- -2x PLL for system clock, USB, SAI, ADC
STM32WB55RG Pin Configuration
The RF block contains dedicated pins, listed in Table 4 .
:
Table 4. RF pin list
| Name | Type | Description |
|---|---|---|
| RF1 | I/O | RF Input/output, must be connected to the antenna through a low-pass matching network |
| OSC_OUT | I/O | 32 MHz main oscillator, also used as HSE source |
| OSC_IN RF_TX_ MOD_EXT_PA | I/O | External PA transmit control |
| VDDRF | I/O | Dedicated supply, must be connected to V DD |
| (1) | V DD | |
| VSSRF | V SS | To be connected to GND |
STM32WB55RG Electrical Characteristics
The definition and values of input/output AC characteristics are given in Table 74 .
Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions .
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Table 74. I/O AC characteristics (1)(2)
| Speed | Symbol | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| 00 | Fmax | C = 50 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 5 | MHz |
| 00 | Fmax | C = 50 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 1 | MHz |
| 00 | Fmax | C = 10 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 10 | MHz |
| 00 | Fmax | C = 10 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 1.5 | MHz |
| 00 | Tr/Tf | C = 50 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 25 | ns |
| 00 | Tr/Tf | C = 50 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 52 | ns |
| 00 | Tr/Tf | C = 10 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 17 | ns |
| 00 | Tr/Tf | C = 10 pF, 1.62 V ≤ V DD ≤ ≤ 2.7 V | - | 37 | ns |
| 01 | Fmax | C = 50 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 25 | MHz |
| 01 | Fmax | C = 50 pF, 1.62 V ≤ V DD ≤ ≤ 2.7 V | - | 10 | MHz |
| 01 | Fmax | C = 30 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 50 | MHz |
| 01 | Fmax | C = 30 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 15 | MHz |
| Tr/Tf | C = 50 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 9 | ns | |
| Tr/Tf | C = 50 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 16 | ns | |
| Tr/Tf | C = 30 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 4.5 | ns | |
| Tr/Tf | C = 30 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 9 | ns | |
| 10 | Fmax | C = 50 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 50 | MHz |
| 10 | Fmax | C = 50 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 25 | MHz |
| 10 | Fmax | C = 30 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 100 (3) | MHz |
| 10 | Fmax | C = 30 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 37.5 | MHz |
| 10 | Tr/Tf | C = 50 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 5.8 | ns |
| 10 | Tr/Tf | C = 50 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 11 | ns |
| 10 | Tr/Tf | C = 10 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 2.5 | ns |
| 10 | Tr/Tf | C = 10 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 5 | ns |
| 11 | Fmax | C = 30 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 120 (3) | MHz |
| 11 | Fmax | C = 30 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 50 | MHz |
| 11 | Fmax | C = 10 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 180 (3) | MHz |
| 11 | Fmax | C = 10 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 75 (3) | MHz |
| C = 30 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 3.3 | ns | ||
| C = 30 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 6 | ns | ||
| Tr/Tf | C = 10 pF, 2.7 V ≤ V DD ≤ 3.6 V | - | 1.7 | ns | |
| C = 10 pF, 1.62 V ≤ V DD ≤ 2.7 V | - | 3.3 | ns |
- This value represents the I/O capability but the maximum system frequency is limited to 64 MHz.
STM32WB55RG Absolute Maximum Ratings
Stresses above the absolute maximum ratings listed in Table 20 , Table 21 and Table 22 may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Device mission profile (application conditions) is compliant with JEDEC JESD47 Qualification Standard, extended mission profiles are available on demand.
168
Table 20. Voltage characteristics (1)
| Symbol | Ratings | Min | Max | Unit |
|---|---|---|---|---|
| V DDX - V SS | External main supply voltage (including V DD , V DDA , V DDUSB , V LCD , V DDRF , V DDSMPS , V BAT , V REF+ ) | -0.3 | 4.0 | |
| V IN (2) | Input voltage on FT_xxx pins | V SS -0.3 | min (V DD , V DDA , V DDUSB , V LCD , V DDRF , V DDSMPS ) + 4.0 (3)(4) | V |
| V IN (2) | Input voltage on TT_xx pins | V SS -0.3 | 4.0 | V |
| V IN (2) | Input voltage on any other pin | V SS -0.3 | 4.0 | V |
| | ∆ V DDx | | Variations between different V DDX power pins of the same domain | - | 50 | mV |
| |V SSx -V SS | | Variations between all the different ground pins (5) | - | 50 | mV |
| V REF+ - V DDA | Allowed voltage difference for V REF+ > V DDA | - | 0.4 | V |
- VIN maximum must always be respected. Refer to Table 21 for the maximum allowed injected current values.
- This formula must be applied only on the power supplies related to the IO structure described in the pin definition table.
- To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
- Include VREF- pin.
Table 21. Current characteristics
| Symbol | Ratings | Max | Unit |
|---|---|---|---|
| ∑ IV DD | Total current into sum of all V DD power lines (source) (1) | 130 | mA |
| ∑ IV SS | Total current out of sum of all V SS ground lines (sink) (1) | 130 | mA |
| IV DD(PIN) | Maximum current into each V DD power pin (source) (1) | 100 | mA |
| IV SS(PIN) | Maximum current out of each V SS ground pin (sink) (1) | 100 | mA |
| I IO(PIN) | Output current sunk by any I/O and control pin except FT_f | 20 | mA |
| I IO(PIN) | Output current sunk by any FT_f pin | 20 | mA |
| I IO(PIN) | Output current sourced by any I/O and control pin | 20 | mA |
| ∑ I IO(PIN) | Total output current sunk by sum of all I/Os and control pins (2) | 100 | mA |
| ∑ I IO(PIN) | Total output current sourced by sum of all I/Os and control pins (2) | 100 | mA |
| I INJ(PIN) (3) | Injected current on FT_xxx, TT_xx, RST and B pins, except PB0 and PB1 | -5 / +0 (4) | mA |
| I INJ(PIN) (3) | Injected current on PB0 and PB1 | -5/0 | mA |
| ∑ |I INJ(PIN) | | Total injected current (sum of all I/Os and control pins) (5) | 25 | mA |
- When several inputs are submitted to a current injection, the maximum ∑ |I INJ(PIN) | is the absolute sum of the negative injected currents (instantaneous values).
Table 22. Thermal characteristics
| Symbol | Ratings | Value | Unit |
|---|---|---|---|
| T STG | Storage temperature range | -65 to +150 | °C |
| T J | Maximum junction temperature | 130 | °C |
Table 22. Thermal characteristics
168
STM32WB55RG Thermal Information
The maximum chip junction temperature (T J max) must never exceed the values given in Table 24: General operating conditions .
The maximum chip-junction temperature, T J max, in degrees Celsius, can be calculated using the equation:
$$T_J\text{ max} = T_A\text{ max} + (P_D\text{ max} \times \Theta_{JA})$$
STM32WB55RG Typical Application
The schematic in Figure 4 and the external components listed in Table 4 are purely indicative. For more details refer to the 'Reference design' provided in separate documents.
Note:
Figure 4. External components for the RF part
Table 5. Typical external components
| Component | Description | Value |
|---|---|---|
| C1 | Decoupling capacitance for RF | 100 nF // 100 pF |
| X1 | 32 MHz crystal (1) | 32 MHz |
| Antenna filter | Antenna filter and matching network | Refer to AN5165, on www.st.com |
| Antenna | 2.4 GHz band antenna | - |
For more details refer to AN5165 'Development of RF hardware using STM32WB microcontrollers' available on www.st.com.
STM32WB55RG Package Information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.
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