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STM32L476RC

Arm Cortex-M4 MCU

The STM32L476RC is a arm cortex-m4 mcu from STMicroelectronics. View the full STM32L476RC datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

STMicroelectronics

Category

Arm Cortex-M4 MCU

Package

LQFP144, UFBGA144, UFBGA132, LQFP100, WLCSP99, WLCSP81, WLCSP72, LQFP64

Key Specifications

ParameterValue
SramUp to 128 KB
Cpu CoreArm Cortex-M4 with FPU
Gpio CountUp to 114
Adc Channels3x 12-bit, 5 Msps
Dac Channels2x 12-bit
Flash MemoryUp to 1 MB
Cpu FrequencyUp to 80 MHz
Run Mode Current Ldo100 μA/MHz
Supply Voltage Range1.71 V to 3.6 V
Run Mode Current Smps39 μA/MHz
Shutdown Mode Current30 nA
Communication InterfacesUSB OTG 2.0 FS
Operating Temperature Range-40 °C to 125 °C

Overview

Part: STM32L476xx from STMicroelectronics

Type: Ultra-low-power Arm Cortex-M4 32-bit MCU+FPU

Description: Ultra-low-power Arm Cortex-M4 32-bit MCU+FPU with up to 1MB flash, 128 KB SRAM, USB OTG FS, LCD, and a maximum frequency of 80 MHz.

Operating Conditions:

  • Supply voltage: 1.71 V to 3.6 V
  • Operating temperature: -40 °C to 125 °C
  • Max CPU frequency: 80 MHz

Absolute Maximum Ratings:

  • Max supply voltage: 4.0 V (VDD, VDDA, VDDUSB, VDDIO2, VDDLCD)
  • Max junction/storage temperature: -65 to +150 °C (Storage temperature range)

Key Specs:

  • Core: Arm 32-bit Cortex-M4 CPU with FPU, up to 80 MHz
  • Flash memory: Up to 1 MB, 2 banks read-while-write
  • SRAM: Up to 128 KB, including 32 KB with hardware parity check
  • ADC: 3x 12-bit, 5 Msps, up to 16-bit with hardware oversampling
  • Run mode current: 39 μA/MHz (@3.3 V SMPS Mode)
  • Low-power Stop 2 mode current: 1.1 μA (1.4 μA with RTC)
  • I/Os: Up to 114 fast I/Os, most 5 V-tolerant
  • Communication: USB OTG 2.0 full-speed, 3x I2C, 5x USARTs, 3x SPIs, 1x Quad SPI, CAN, SDMMC

Features:

  • Ultra-low-power with FlexPowerControl
  • Adaptive real-time accelerator (ART Accelerator™) for 0-wait-state execution from flash
  • Up to 24 capacitive sensing channels
  • LCD 8×40 or 4×44 with step-up converter
  • Rich analog peripherals: 2x 12-bit DAC, 2x operational amplifiers, 2x ultra-low-power comparators
  • True random number generator

Applications:

Package:

  • LQFP144
  • UFBGA144
  • UFBGA132
  • LQFP100
  • WLCSP99
  • WLCSP81
  • WLCSP72
  • LQFP64

Pin Configuration

Figure 6. STM32L476Zx LQFP144 pinout (1)(2)

  1. The above figure shows the package top view.
  2. The I/O pins supplied by V DDIO2 are shown in gray.

107

Figure 7. STM32L476Zx, external SMPS device, LQFP144 pinout (1)(2)

  1. The above figure shows the package top view.
  2. The I/O pins supplied by V DDIO2 are shown in gray.

Electrical Characteristics

The definition and values of input/output AC characteristics are given in Figure 31 and Table 72 , respectively.

Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 23: General operating conditions .

Table 72. I/O AC characteristics (1)(2)

SpeedSymbolParameterConditionsMinMaxUnit
00FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-5MHz
00FmaxMaximum frequencyC=50 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-1MHz
00FmaxMaximum frequencyC=50 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-0.1MHz
00FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-10MHz
00FmaxMaximum frequencyC=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-1.5MHz
00FmaxMaximum frequencyC=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-0.1MHz
00Tr/TfOutput rise and fall timeC=50 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-25ns
00Tr/TfOutput rise and fall timeC=50 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-52ns
00Tr/TfOutput rise and fall timeC=50 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-140ns
00Tr/TfOutput rise and fall timeC=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-17ns
00Tr/TfOutput rise and fall timeC=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-37ns
00Tr/TfOutput rise and fall timeC=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-110ns
01FmaxMaximum frequencyC=50 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-25MHz
01FmaxMaximum frequencyC=50 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-10MHz
01FmaxMaximum frequencyC=50 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-1MHz
01FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-50MHz
01FmaxMaximum frequencyC=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-15MHz
01FmaxMaximum frequencyC=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-1MHz
01Tr/TfOutput rise and fall timeC=50 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-9ns
01Tr/TfOutput rise and fall timeC=50 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-16ns
01Tr/TfOutput rise and fall timeC=50 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-40ns
01Tr/TfOutput rise and fall timeC=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-4.5ns
01Tr/TfOutput rise and fall timeC=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-9ns
01Tr/TfOutput rise and fall timeC=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-21ns

Table 72. I/O AC characteristics (1)(2)

232

Table 72. I/O AC characteristics (1)(2) (continued)

SpeedSymbolParameterConditionsMinMaxUnit
10Maximum frequencyC=50 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-50MHz
10C=50 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-25MHz
10FmaxC=50 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-5MHz
10C=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-100 (3)MHz
10C=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-37.5MHz
10C=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-5MHz
10Tr/TfOutput rise and fall timeC=50 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-5.8ns
10Output rise and fall timeC=50 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-11ns
10C=50 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-28ns
10C=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-2.5ns
10C=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-5ns
10C=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-12ns
11Maximum frequencyC=30 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-120 (3)MHz
11Maximum frequencyC=30 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-50MHz
11Maximum frequencyC=30 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-10MHz
11FmaxMaximum frequencyC=10 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-180 (3)MHz
11C=10 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-75MHz
11C=10 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-10MHz
11Output rise and fallC=30 pF, 2.7 V ≤ V DDIOx ≤ 3.6 V-3.3ns
11Tr/TftimeC=30 pF, 1.62 V ≤ V DDIOx ≤ 2.7 V-6ns
11C=30 pF, 1.08 V ≤ V DDIOx ≤ 1.62 V-16ns
Fm+FmaxMaximum frequencyC=50 pF, 1.6 V ≤ V DDIOx ≤ 3.6 V-1MHz
Fm+TfOutput fall time (4)C=50 pF, 1.6 V ≤ V DDIOx ≤ 3.6 V-5ns
  1. This value represents the I/O capability but the maximum system frequency is limited to 80 MHz.
  2. The fall time is defined between 70% and 30% of the output waveform accordingly to I 2 C specification.

Figure 31. I/O AC characteristics definition (1)

  1. Refer to Table 72: I/O AC characteristics .

Absolute Maximum Ratings

Stresses above the absolute maximum ratings listed in Table 20: Voltage characteristics , Table 21: Current characteristics and Table 22: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 qualification standard, extended mission profiles are available on demand.

Table 20. Voltage characteristics (1)

SymbolRatingsMinMaxUnit
V DDX - V SSExternal main supply voltage (including V DD , V DDA , V DDIO2 , V DDUSB , V LCD , V BAT , V REF+ )-0.34V
V DD12 - V SSExternal SMPS supply voltageRange 1 -0.31.4V
V DD12 - V SSExternal SMPS supply voltageRange 2 -0.31.4V

Table 20. Voltage characteristics (1)

Table 20. Voltage characteristics (1) (continued)

SymbolRatingsMinMaxUnit
V IN (2)Input voltage on FT_xxx pinsV SS -0.3min (V DD , V DDA , V DDIO2 , V DDUSB , V LCD ) + 4.0 (3)(4)V
V IN (2)Input voltage on TT_xx pinsV SS -0.34.0V
V IN (2)Input voltage on BOOT0 pinV SS9.0V
V IN (2)Input voltage on any other pinsV SS -0.34.0V
| ∆ V DDx |Variations between different V DDX power pins of the same domain-50mV
|V SSx -V SS |Variations between all the different ground pins (5)-50mV
V REF+ - V DDAAllowed voltage difference for V REF+ > V DDA-0.4V
  1. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
  2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
  3. Include VREF- pin.

Table 21. Current characteristics

SymbolRatingsMaxUnit
∑ IV DDTotal current into sum of all V DD power lines (source) (1)(2)150mA
∑ IV SSTotal current out of sum of all V SS ground lines (sink) (1)150mA
IV DD(PIN)Maximum current into each V DD power pin (source) (1)(2)100mA
IV SS(PIN)Maximum current out of each V SS ground pin (sink) (1)100mA
I IO(PIN)Output current sunk by any I/O and control pin except FT_f20mA
I IO(PIN)Output current sunk by any FT_f pin20mA
I IO(PIN)Output current sourced by any I/O and control pin20mA
∑ I IO(PIN)Total output current sunk by sum of all I/Os and control pins (3)100mA
∑ I IO(PIN)Total output current sourced by sum of all I/Os and control pins (3)100mA
I INJ(PIN) (4)Injected current on FT_xxx, TT_xx, RST and B pins, except PA4, PA5-5/+0 (5)mA
I INJ(PIN) (4)Injected current on PA4, PA5-5/0mA
∑ |I INJ(PIN) |Total injected current (sum of all I/Os and control pins) (6)25mA

232

  1. A negative injection is induced by V IN < V SS . I INJ(PIN) must never be exceeded. Refer also to Table 20: Voltage characteristics for the minimum allowed input voltage values.
  2. When several inputs are submitted to a current injection, the maximum ∑ |I INJ(PIN) | is the absolute sum of the negative injected currents (instantaneous values).

Thermal Information

SymbolRatingsValueUnit
T STGStorage temperature range-65 to +150°C
T JMaximum junction temperature150°C

Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.

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