STM32G431C6

ARM Cortex-M4 MCU

The STM32G431C6 is a arm cortex-m4 mcu from STMicroelectronics. View the full STM32G431C6 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

STM32G431C6 shares its datasheet with STM32G431CBU6, whose page lists every part number it covers.

Official STM32G431C6 datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

STM32G431C6 Key Specifications

Parameter	Value
Packaging	Tray
Standard Pack Qty	1560
Maximum CPU frequency	170 MHz (213 DMIPS)
Flash memory	up to 128 KB with ECC
SRAM	32 KB total (22 KB general SRAM + 10 KB CCM SRAM)
Analog supply voltage (VDDA)	1.62 V to 3.6 V (ADC/COMP), 2.0 V to 3.6 V (OPAMP), 2.4 V to 3.6 V (VREFBUF)
ADC	2x 12-bit ADCs up to 0.25 μs (up to 23 channels, up to 16-bit with hardware oversampling)
DAC	4x 12-bit DAC channels (2x buffered 1 MSPS, 2x unbuffered 15 MSPS)
Total output current sunk/sourced across all I/Os	100 mA max

STM32G431C6 Overview

Part: STM32G431xB

Type: ARM Cortex-M4 Microcontroller

Description: 32-bit ARM Cortex-M4 MCU with FPU running up to 170 MHz with up to 128 KB Flash, 32 KB SRAM, math accelerators, and rich analog peripherals.

Operating Conditions:

Supply voltage: 1.71 to 3.6 V
Operating temperature: -40 to 85 °C (suffix-dependent — see Table 17 for grade-specific ranges)
Max AHB/APB clock frequency: 170 MHz

Absolute Maximum Ratings:

Max supply voltage: 4.0 V
Max continuous current: 150 mA (Total current into sum of all VDD power lines)
Max junction/storage temperature: 150 °C

Key Specs:

Maximum CPU frequency: 170 MHz (213 DMIPS)
Flash memory: up to 128 KB with ECC
SRAM: 32 KB total (22 KB general SRAM + 10 KB CCM SRAM)
Analog supply voltage (VDDA): 1.62 V to 3.6 V (ADC/COMP), 2.0 V to 3.6 V (OPAMP), 2.4 V to 3.6 V (VREFBUF)
ADC: 2x 12-bit ADCs up to 0.25 μs (up to 23 channels, up to 16-bit with hardware oversampling)
DAC: 4x 12-bit DAC channels (2x buffered 1 MSPS, 2x unbuffered 15 MSPS)
Total output current sunk/sourced across all I/Os: 100 mA max

Features:

CORDIC mathematical accelerator for trigonometric functions and FMAC filter mathematical accelerator
4x rail-to-rail analog comparators and 3x operational amplifiers with PGA mode
Internal voltage reference buffer (VREFBUF) supporting 2.048 V, 2.5 V, and 2.9 V
14 timers including 2x 16-bit 8-channel advanced motor control timers and 1x 32-bit timer
Communication peripherals: 1x FDCAN, 4x USART/UART, 1x LPUART, 3x SPI, 3x I2C, 1x SAI, USB 2.0 full-speed, and USB Type-C / UCPD controller
Adaptive real-time accelerator (ART Accelerator) enabling 0-wait-state Flash execution

Applications:

Motor control and drives
Power supplies and digital power conversion
General-purpose embedded control

Package:

UFQFPN32 (5 x 5 mm)
LQFP32 (7 x 7 mm)
UFQFPN48 (7 x 7 mm)
LQFP48 (7 x 7 mm)
WLCSP49 (Pitch 0.4)
LQFP64 (10 x 10 mm)
UFBGA64 (5 x 5 mm)
LQFP80 (12 x 12 mm)
LQFP100 (14 x 14 mm)

STM32G431C6 Features

24-bit CORDIC rotation engine
Circular and Hyperbolic modes
Rotation and Vectoring modes
Functions: Sine, Cosine, Sinh, Cosh, Atan, Atan2, Atanh, Modulus, Square root, Natural logarithm
Programmable precision up to 20-bit
Fast convergence: 4 bits per clock cycle
Supports 16-bit and 32-bit fixed point input and output formats
Low latency AHB slave interface
Results can be read as soon as ready without polling or interrupt
DMA read and write channels

STM32G431C6 Electrical Characteristics

The definition and values of input/output AC characteristics are given in Figure 26 and Table 55 , respectively.

Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 17: General operating conditions .

160

Table 55. I/O (except FT_c) AC characteristics (1) (2)

Speed	Symbol	Parameter	Conditions	Min	Max	Unit
00	Fmax	Maximum frequency	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	5	MHz
00	Fmax	Maximum frequency	C=50 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	1	MHz
00	Fmax	Maximum frequency	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	10	MHz
00	Fmax	Maximum frequency	C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	1.5	MHz
00	Tr/Tf	Output rise and fall time	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	25	ns
00	Tr/Tf	Output rise and fall time	C=50 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	52	ns
00	Tr/Tf	Output rise and fall time	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	17	ns
00	Tr/Tf	Output rise and fall time	C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	37	ns
01	Fmax	Maximum frequency	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	25	MHz
01	Fmax	Maximum frequency	C=50 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	10	MHz
01	Fmax	Maximum frequency	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	50	MHz
01	Fmax	Maximum frequency	C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	15	MHz
	Tr/Tf	Output rise and fall time	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	9	ns
	Tr/Tf	Output rise and fall time	C=50 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	16	ns
	Tr/Tf	Output rise and fall time	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	4.5	ns
	Tr/Tf	Output rise and fall time	C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	9	ns
10	Fmax	Maximum frequency	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	50	MHz
10	Fmax	Maximum frequency	C=50 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	25	MHz
10	Fmax	Maximum frequency	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	100 (3)	MHz
10	Fmax	Maximum frequency	C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	37.5	MHz
10	Tr/Tf	Output rise and fall time	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	5.8	ns
10	Tr/Tf	Output rise and fall time	C=50 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	11	ns
10	Tr/Tf	Output rise and fall time	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	2.5	ns
10	Tr/Tf		C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	5
11	Fmax	Maximum frequency	C=30 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	120 (3)	MHz
11	Fmax	Maximum frequency	C=30 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	50	MHz
11	Fmax	Maximum frequency	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	180 (3)	MHz
11	Fmax		C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	75
11	Tr/Tf	Output rise and	C=30 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	3.3	ns
11	Tr/Tf	Output rise and	C=30 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	6	ns
11	Tr/Tf	fall time (4)	C=10 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	1.7	ns
11	Tr/Tf		C=10 pF, 1.62 V ≤ V DD ≤ 2.7 V	-	3.3	ns

Table 55. I/O (except FT_c) AC characteristics (1) (2)

Table 55. I/O (except FT_c) AC characteristics (1) (2) (continued)

Speed	Symbol	Parameter	Conditions	Min	Max	Unit
FM+	Fmax (5)	Maximum frequency	C=50 pF, 1.6 V ≤ V DD ≤ 3.6 V	-	1	MHz
FM+	Tr/TF (4)	Output high to low level fall time	C=50 pF, 1.6 V ≤ V DD ≤ 3.6 V	-	5	ns

The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm ® based 32-bit MCUs" for a description of GPIO Port configuration register.
Guaranteed by design.
This value represented the I/O capability but maximum system frequency is 170 MHz.
The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.
The maximum frequency is defined with the following conditions:

45%<Duty cycle<55%
(Tr+ Tf) ≤ 2/3 T.

The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm ® based 32-bit MCUs" for a description of GPIO Port configuration register.
Guaranteed by design.

Table 56. I/O FT_c AC characteristics (1) (2)

Speed	Symbol	Parameter	Conditions	Min	Max	Unit
0	Fmax	Maximum frequency	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	2	MHz
0	Fmax	Maximum frequency	C=50 pF, 1.6 V ≤ V DD ≤ 2.7 V	-	1	MHz
0	Tr/Tf	Output H/L to L/H level fall time	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	170	ns
0	Tr/Tf	Output H/L to L/H level fall time	C=50 pF, 1.6 V ≤ V DD ≤ 2.7 V	-	330	ns
1	Fmax	Maximum frequency	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	10	MHz
1	Fmax	Maximum frequency	C=50 pF, 1.6 V ≤ V DD ≤ 2.7 V	-	5	MHz
1	Tr/Tf	Output H/L to L/H level fall time	C=50 pF, 2.7 V ≤ V DD ≤ 3.6 V	-	35	ns
1	Tr/Tf	Output H/L to L/H level fall time	C=50 pF, 1.6 V ≤ V DD ≤ 2.7 V	-	65	ns

160

STM32G431C6 Absolute Maximum Ratings

Stresses above the absolute maximum ratings listed in Table 14: Voltage characteristics , Table 15: Current characteristics and Table 16: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Exposure to maximum rating conditions for extended periods may affect device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 qualification standard, extended mission profiles are available on demand.

Table 14. Voltage characteristics (1)

Symbol	Ratings	Min	Max	Unit
V DD - V SS	External main supply voltage (including V DD , V DDA , V BAT and V REF+ )	-0.3	4.0	V
V IN (2)	Input voltage on FT_xxx pins except FT_c pins	V SS -0.3	min (V DD ,V DDA ) + 4.0 (3)(4)	V
V IN (2)	Input voltage on FT_c pins	V SS -0.3	5.5	V
V IN (2)	Input voltage on TT_xx pins	V SS -0.3	4.0	V
V IN (2)	Input voltage on any other pins	V SS -0.3	4.0	V
\| ∆ V DDx \|	Variations between different V DDX power pins of the same domain	-	50	mV
\|V SSx -V SS \|	Variations between all the different ground pins (5)	-	50	mV
V REF+ -V DDA	Allowed voltage difference for V REF+ > V DDA	-	0.4	V

Table 14. Voltage characteristics (1)

160

VIN maximum must always be respected. Refer to Table 15: Current characteristics for the maximum allowed injected current values.
This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
Include VREF- pin.
This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
Positive injection (when V IN > V DD ) is not possible on these I/Os and does not occur for input voltages lower than the specified maximum value.
A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 14: Voltage characteristics for the minimum allowed input voltage values.
When several inputs are submitted to a current injection, the maximum ∑ |I INJ(PIN) | is the absolute sum of the negative injected currents (instantaneous values).

Table 15. Current characteristics

Symbol	Ratings	Max	Unit
∑ IV DD	Total current into sum of all V DD power lines (source) (1)	150	mA
∑ IV SS	Total current out of sum of all V SS ground lines (sink) (1)	150	mA
IV DD(PIN)	Maximum current into each V DD power pin (source) (1)	100	mA
IV SS(PIN)	Maximum current out of each V SS ground pin (sink) (1)	100	mA
I IO(PIN)	Output current sunk by any I/O and control pin except FT_f	20	mA
I IO(PIN)	Output current sunk by any FT_f pin	20	mA
I IO(PIN)	Output current sourced by any I/O and control pin	20	mA
∑ I IO(PIN)	Total output current sunk by sum of all I/Os and control pins (2)	100	mA
∑ I IO(PIN)	Total output current sourced by sum of all I/Os and control pins (2)	100	mA
I INJ(PIN) (3)	Injected current on FT_xxx, TT_xx, NRST pins	-5/0 (4)	mA
∑ \|I INJ(PIN) \|	Total injected current (sum of all I/Os and control pins) (5)	±25	mA

Table 16. Thermal characteristics

Symbol	Ratings	Value	Unit
T STG	Storage temperature range	-65 to +150	°C
T J	Maximum junction temperature	150	°C

Table 16. Thermal characteristics

STM32G431C6 Thermal Information

The maximum chip-junction temperature, T J max, in degrees Celsius, may be calculated using the following equation:

T J max = T A max + (P D max x Θ JA )

STM32G431C6 Package Information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com . ECOPACK is an ST trademark.

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