RT9466GQW

Part: RT9466GQW — Richtek Technology Corporation

Type: Single-Cell Li-Ion/Li-Polymer Switching Battery Charger with Power Path Management and USB-OTG Boost

Description: 5 A, 1.5 MHz/0.75 MHz synchronous switching charger with I²C control, 4–14 V recommended input (22 V abs max on VBUS), BATFET power path, USB-OTG boost mode and an integrated ADC, in a WQFN-24L 4x4 package.

Operating Conditions:

• Supply voltage (VBUS): 4–14 V
• Operating temperature: -40 to 85 °C ambient (junction -40 to 125 °C)
• Max input current (AICR): 3.25 A; max fast-charge current 5 A; max battery voltage 4.71 V

Absolute Maximum Ratings:

• Max supply voltage (VBUS): -0.3 to 22 V (-2 V peak <100 ns)
• Max junction temperature: 150 °C
• Storage temperature: -65 to 150 °C
• Lead temperature (soldering, 10 s): 260 °C
• ESD (HBM): 2 kV

Key Specs:

• Regulated battery voltage range: 3.9–4.71 V in 10 mV steps (default 4.2 V); accuracy ±1% at 0 to 85 °C
• Fast-charge current range: 0.1–5 A in 0.1 A steps; accuracy ±7% for ICHG > 1000 mA (VBAT = 3.8 V)
• End-of-charge current: 100–850 mA in 50 mA steps (default 250 mA, ±20%)
• VBUS UVLO: 3.3 V typ (rising); VBUS OVP: 14.5 V typ (rising)
• Battery OVP: 108% of VOREG typ; thermal regulation at 120 °C typ; thermal shutdown at 160 °C typ
• Quiescent VBUS supply current: 8 mA typ switching; 170 μA max in high-impedance mode (VBUS = 5 V)
• Battery leakage current (no VBUS): 25 μA max with power path off, 60 μA max with power path on (VBAT = 4.2 V)
• MIVR threshold range: 3.9–13.4 V in 0.1 V steps (default 4.4 V)
• Charging efficiency: 90.25% at 2 A, 88.86% at 3 A, 84.2% at 5 A (with TOKO DFE252012F inductor)

Features:

• Synchronous 1.5 MHz/0.75 MHz fixed-frequency PWM controller, up to 95% duty cycle
• Power path management by BATFET control
• High-voltage input support (9 V/12 V) and Pump Express 1.0/2.0
• IR compensation from charger output to cell terminal
• Average input current regulation (AICR): 0.1–3.25 A in 50 mA steps, plus ILIM pin current limit
• Shipping mode for battery leakage reduction; QON pin wake-up/reset
• Thermal regulation, input OVP, bad adapter protection, battery OVP
• ADC for VBUS, VBAT, VSYS, REGN, TS_BAT, IBUS, IBAT, TEMP_JC
• INT output and I²C interface with watchdog/polling function
• NTC battery temperature sensing (TS pin)

Applications:

• Cellular telephones
• Personal information appliances
• Tablet PCs, power banks
• Portable instruments

Package:

• WQFN-24L 4x4 (QW, exposed pad), green (halogen-free, Pb-free)

• High Efficiency 5A, 1.5MHz Switching Charger with Output Inductor DFE252012F, TOKO
• Charging Efficiency 90.25% at ICHG = 2A
• Charging Efficiency 88.86% at ICHG = 3A
• Charging Efficiency 84.2% at ICHG = 5A
• Synchronous 1.5MHz/0.75MHz Fixed-Frequency PWM Controller with Up to 95% Duty Cycle
• Power Path Management by BATFET Control
• Support High Voltage Input (9V/12V)
• Support High Voltage Input Adapter (Pump Express 1.0/2.0)
• Support IR Compensation Function from Charger Output to Cell Terminal
• Optimize Input Sourcing Capability to Prevent Overload
• AICR Current Limit Setting via I 2 C
• ILIM Pin for Current Limit Setting
• Average Input Current Limit Measurement
• Shipping Mode for Battery Leakage Reduction
• Wake Up System, Exit Shipping Mode, and Reset System by QON Pin
• Automatic Charging
• Average Input Current Regulation (AICR) :

0.1A to 3.25A in 50mA Steps

• Charge Current Regulation Accuracy : ± 7%
• Charge Voltage Regulation Accuracy : ± 1% (0 to 85 ° C)
• Protection for Overall System Considerations
• Thermal Regulation for Current Reduction and Over-Temperature Protection
• Input Over-Voltage Protection
• Input Bad Adapter Protection
• Battery Over-Voltage Protection
• Support ADC Conversion for
• VBUS, VBAT, VSYS, REGN, TS_BAT, IBUS, IBAT, TEMP_JC
• INT Output for Communication with Host Through I 2 C (Watch Dog/Polling Function)

Package Type QW : WQFN-24L 4x4 (W-Type) (Exposed Pad-Option 2)

• Cellular Telephones
• Personal Information Appliances
• Tablet PC, Power Bank
• Portable Instruments

The junction temperature should never exceed the absolute maximum junction temperature TJ(MAX), listed under Absolute Maximum Ratings, to avoid permanent damage to the device. The maximum allowable power dissipation depends on the thermal resistance of the IC package, the PCB layout, the rate of surrounding airflow, and the difference between the junction and ambient temperatures. The maximum power dissipation can be calculated using the following formula :

$$P_{D(MAX)} = (T_{J(MAX)} - T_A) / \theta_{JA}$$

where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θ JA is the junction-to-ambient thermal resistance.

For continuous operation, the maximum operating junction temperature indicated under Recommended Operating Conditions is 125 ° C. The junction-to-ambient thermal resistance, θ JA, is highly package dependent. For a WQFN-24L 4x4 package, the thermal resistance, θ JA, is 22 ° C/W on a standard JEDEC 51-7 high effective-thermalconductivity four-layer test board. The maximum power dissipation at TA = 25 ° C can be calculated as below :

PD(MAX) = (125 ° C -25 ° C) / (22 ° C/W) = 4.54W for a WQFN-24L 4x4 package.

The maximum power dissipation depends on the operating ambient temperature for the fixed TJ(MAX) and the thermal resistance, θ JA. The derating curves in Figure 1 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation.

Figure 1. Derating Curve of Maximum Power Dissipation