TPS54302

TPS54302 4.5-V to 28-V Input, 3-A Output, EMI-Friendly Synchronous Step-Down Converter

Manufacturer

Texas Instruments

Overview

Part: TPS54302

Type: Synchronous Step-Down Converter

Key Specs:

Input voltage range: 4.5-V to 28-V
Continuous output current: 3-A
Integrated MOSFETs: 85-m $\Omega$ and 40-m $\Omega$
Shutdown current: 2-µA
Quiescent current: 45-µA
Internal soft start: 5-ms
Switching frequency: 400-kHz

Features:

Frequency spread spectrum to reduce EMI
Advanced Eco-mode™ pulse skip
Peak current-mode control
Internal loop compensation
Overcurrent protection for both MOSFETs with hiccup mode protection
Overvoltage protection
Thermal shutdown

Applications:

12-V, 24-V distributed power-bus supply
Industry application: White goods
Consumer application: Audio, STB, DTV, Printer

Package:

SOT-23 (6)
SOT-23-THIN (6): 1.60 mm × 2.90 mm

Features

4.5-V to 28-V wide input voltage range
Integrated 85-m $\Omega$ and 40-m $\Omega$ MOSFETs for 3-A, continuous output current
Low 2-µA shutdown, 45-µA quiescent current
Internal 5-ms soft start
Fixed 400-kHz switching frequency
Frequency spread spectrum to reduce EMI
Advanced Eco-mode^™ pulse skip
Peak current-mode control
Internal loop compensation
Overcurrent protection for both MOSFETs with hiccup mode protection
Overvoltage protection
Thermal shutdown
SOT-23 (6) package

Applications

12-V, 24-V distributed power-bus supply
Industry application
- White goods
Consumer application
- Audio
- STB. DTV
- Printer

Simplified Schematic

Pin Configuration

Figure 5-1. DDC Package 6-Pin SOT-23-THIN Top View

Table 5-1. Pin Functions

	PIN	TYPE(1)	DESCRIPTION
NAME	NO.
BOOT	6	O	Supply input for the high-side NFET gate drive circuit. Connect a 0.1-μF capacitor between BOOT and SW pins.
EN	5	I	This pin is the enable pin. Float the EN pin to enable.
FB	4	I	Converter feedback input. Connect to output voltage with feedback resistor divider.
GND	1	—	Ground pin Source terminal of low-side power NFET as well as the ground terminal for controller circuit. Connect sensitive VFB to this GND at a single point.
SW	2	O	Switch node connection between high-side NFET and low-side NFET.
VIN	3	—	Input voltage supply pin. The drain terminal of high-side power NFET.

(1) O = output; I = input

Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. These specifications are interpreted as conditions that do not degrade the device parametric or functional specifications for the life of the product containing it. T^J = –40°C to +125°C, VIN = 4.5 V to 28 V, (unless otherwise noted).

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY
VIN	Input voltage range		4.5		28	V
IQ	Non switching quiescent current	EN = 5 V, VFB = 1 V		45		µA
IOFF	Shut down current	EN = GND		2		µA
		Rising VIN	3.8	4.1	4.4	V
VIN(UVLO)	VIN under voltage lockout	Falling VIN	3.3	3.6	3.9	V
	Hysteresis		400	480	560	mV
ENABLE (EN PIN)
VENrising		Rising		1.21	1.28	V
VENfalling	Enable threshold	Falling	1.1	1.19		V
I(EN_INPUT)	Input current	VEN = 1 V		0.7		μA
I(EN_HYS)	Hysteresis current	VEN = 1.5 V		1.55		μA
	FEEDBACK AND ERROR AMPLIFIER
VFB	Feedback Voltage	VIN = 12 V	0.581	0.596	0.611	V
PULSE SKIP MODE
(1) I(SKIP)	Pulse skip mode peak inductor current threshold	VIN = 12 V, VOUT = 5 V, L = 10 µH		500		mA
POWER STAGE
R(HSD)	High-side FET on resistance	TA = 25°C, VBST – SW = 6 V		85		mΩ
R(LSD)	Low-side FET on resistance	TA = 25°C, VIN = 12		40		mΩ
CURRENT LIMIT
I(LIM_HS)	High-side current limit	Maximum inductor peak current	4	5	5.9	A
I(LIM_LS)	Low-side source current limit	Maximum inductor valley current	3.1	4	5.5	A
OSCILLATOR
fSW	Centre switching frequency		290	400	510	kHz
	OVERTEMPERATURE PROTECTION
	Rising temperature			165		°C
Thermal Shutdown(1)	Hysteresis			10		°C
	Hiccup time			32768		Cycles

(1) Not production tested

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

		MIN	MAX	UNIT
	VIN	–0.3	30	V
Input voltage, VI	EN	–0.3	7	V
	FB	–0.3	7	V
	BOOT-SW	–0.3	7	V
Output voltage, VO	SW	–0.3	30	V
	SW (20 ns transient)	–5	30	V
Operating junction temperature, TJ		–40	150	°C
Storage temperature, Tstg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
		VIN	4.5	28	V
VI	Input voltage	EN	–0.1	7	V
		FB	–0.1	7	V
	Output voltage	BOOT-SW	–0.1	7	V
VO		SW	–0.1	28	V
TJ	Operating junction temperature		–40	125	°C

Thermal Information

| | | TPS54302 | |-----------|----------------------------------------------|--------------|------| | | THERMAL METRIC(1) | DDC (SOT-23) | UNIT | | | | 6 PINS | | RθJA | Junction-to-ambient thermal resistance | 87.1 | °C/W | | RθJC(top) | Junction-to-case (top) thermal resistance | 35.5 | °C/W | | RθJB | Junction-to-board thermal resistance | 14.4 | °C/W | | ψJT | Junction-to-top characterization parameter | 0.9 | °C/W | | ψJB | Junction-to-board characterization parameter | 14.2 | °C/W |

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Product Folder Links: TPS54302

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free