RT9193

Part: RT9193-33 — Richtek Technology Corporation

Type: Ultra-Low Noise CMOS LDO Regulator (3.3 V fixed output)

Description: 2.5–5.5 V input, 300 mA ultra-low noise, ultra-fast CMOS LDO with 220 mV typical dropout at 300 mA, 90 μA typical quiescent current and 50 μs typical start-up time.

Operating Conditions:

• Supply voltage: 2.5–5.5 V
• Operating temperature: -40 to +85 °C ambient (junction -40 to +125 °C)
• EN input voltage: 0–5.5 V
• Output capacitor: at least 1 μF ceramic for stability

Absolute Maximum Ratings:

• Max junction temperature: 150 °C
• Storage temperature: -65 °C (lower limit; upper limit not shown in the extracted table)
• Lead temperature (soldering, 10 s): 260 °C
• Power dissipation at TA = 25 °C: 300 mW (SC-70-5), 400 mW (SOT-23-5/TSOT-23-5), 606 mW (WDFN-6L 2x2), 625 mW (MSOP-8)
• ESD: HBM 2 kV, MM 200 V

Key Specs:

• Output voltage accuracy: ±2% (IOUT = 1 mA)
• Current limit: 360 mA min, 400 mA typ (RLOAD = 1 Ω)
• Quiescent current: 90 μA typ, 130 μA max (VEN ≥ 1.2 V, IOUT = 0 mA)
• Dropout voltage: 170 mV typ, 200 mV max at 200 mA; 220 mV typ, 300 mV max at 300 mA (VOUT > 2.8 V)
• Line regulation: 0.3% max (VIN = VOUT + 1 V to 5.5 V, IOUT = 1 mA)
• Load regulation: 0.6% max (1 mA ≤ IOUT ≤ 300 mA)
• Standby current: 0.01 μA typ, 1 μA max (VEN = GND)
• Output noise: 100 μVRMS typ (10 Hz–100 kHz, IOUT = 200 mA, COUT = 1 μF)
• PSRR: 70 dB at 100 Hz, 50 dB at 10 kHz (IOUT = 10 mA, COUT = 1 μF)
• EN thresholds: VIL 0.4 V max, VIH 1.2 V min (VIN = 3–5.5 V)
• Thermal shutdown: 165 °C, with 30 °C hysteresis

Features:

• Ultra-low noise for RF applications, with noise bypass pin
• Ultra-fast line/load transient response
• Quick start-up (typically 50 μs)
• TTL-logic-controlled shutdown input
• Low temperature coefficient
• Current limiting and thermal shutdown protection
• Works with 1 μF low-ESR ceramic output capacitor
• High power supply rejection ratio
• Quick-discharge function on shutdown
• Custom output voltages available (1.5–5 V in 0.1 V steps)
• RoHS compliant, Pb-free

Applications:

• CDMA/GSM cellular handsets
• Battery-powered equipment
• Laptop, palmtop and notebook computers
• Hand-held instruments
• PCMCIA cards
• Portable information appliances

Package:

• SC-70-5
• SOT-23-5
• TSOT-23-5
• WDFN-6L 2x2
• MSOP-8

• Ultra Low Noise for RF Application

• Ultra Fast Response in Line/Load Transient

• Quick Start-Up (Typically 50 μ s)

• <0.01 μ A Standby Current When Shutdown

• Low Dropout : 220mV @ 300mA

• Wide Operating Voltage Ranges : 2.5V to 5.5V

• TTL-Logic-Controlled Shutdown Input

• Low Temperature Coefficient

• Current Limiting Protection

• Thermal Shutdown Protection

• Only 1 μ F Output Capacitor Required for Stability

• High Power Supply Rejection Ratio

• Custom Voltage Available

• RoHS Compliant and 100% Lead (Pb)-Free

• CDMA/GSM Cellular Handsets
• Battery-Powered Equipment
• Laptop, Palmtops, Notebook Computers
• Hand-Held Instruments
• PCMCIA Cards
• Portable Information Appliances

(VIN = VOUT + 1V, CIN = COUT = 1 μ F, CBP = 22nF, TA = 25°C, unless otherwise specified)

Thermal protection limits power dissipation in RT9193. When the operation junction temperature exceeds 165 ° C, the OTP circuit starts the thermal shutdown function turn the pass element off. The pass element turn on again after the junction temperature cools by 30 ° C.

For continue operation, do not exceed absolute maximum operation junction temperature 125 ° C. The power dissipation definition in device is :

$$P_D = (V_{IN} - V_{OUT}) \times I_{OUT} + V_{IN} \times I_Q$$

The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient. The maximum power dissipation can be calculated by following formula :

$$P_{D(MAX)} = (T_{J(MAX)} - T_A) / \theta_{JA}$$

Where TJ(MAX) is the maximum operation junction temperature 125 ° C, TA is the ambient temperature and the θ JA is the junction to ambient thermal resistance.

For recommended operating conditions specification of RT9193, where TJ(MAX) is the maximum junction temperature of the die (125 ° C) and TA is the maximum ambient temperature. The junction to ambient thermal resistance ( θ JA is layout dependent) for TSOT-23-5/ SOT-23-5 package is 250 ° C/W, SC-70-5 package is 333 ° C/W, WDFN-6L 2x2 package is 165 ° C/W and MSOP8 package is 160 ° C/W on standard JEDEC 51-3 thermal test board. The maximum power dissipation at TA = 25 ° C can be calculated by following formula :

PD(MAX) = (125 ° C -25 ° C) / 333 = 300mW for

SC-70-5

PD(MAX) = (125 ° C -25 ° C) / 250 = 400mW for

TSOT-23-5/SOT-23-5

PD(MAX) = (125 ° C -25 ° C) / 165 = 606mW for

WDFN-6L 2x2

PD(MAX) = (125 ° C -25 ° C) / 160 = 625mW for

MSOP-8

The maximum power dissipation depends on operating ambient temperature for fixed TJ(MAX) and thermal resistance θ JA. For RT9193 packages, the Figure 2 of derating curves allows the designer to see the effect of rising ambient temperature on the maximum power allowed.

Figure 2. Derating Curve for Packages