OPA836IDBVR

The OPA836IDBVR is an electronic component from Texas Instruments. View the full OPA836IDBVR datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Key Specifications

Parameter	Value
-3db Bandwidth	205 MHz
-3db Bandwidth	205 MHz
Amplifier Type	Voltage Feedback
Case/Package	SOT-23
Common Mode Rejection Ratio	94 dB
Input Bias Current	650 nA
Current - Output / Channel	50 mA
Quiescent Current	1mA
Gain Bandwidth Product	118 MHz
Gain Bandwidth Product	118 MHz
Height	0 m
Input Bias Current	1 µA
Input Offset Voltage (Vos)	400 µV
Lead Free	Lead Free
Length	2.9 mm
Lifecycle Status	Production (Last Updated: 5 days ago)
Manufacturer Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Max I/O Voltage	400 µV
Max Operating Temperature	125 °C
Max Supply Voltage	5.5 V
Min Operating Temperature	-40 °C
Min Supply Voltage	2.5 V
Mounting Type	Surface Mount
Number of Channels	1
Number of Circuits	1
Number of Circuits	1
Number of Elements	1
Number of Pins	6
Operating Supply Current	1 mA
Operating Temperature	-40°C ~ 125°C
Output Current per Channel	50 mA
Output Type	Rail-to-Rail
Package / Case	SOT-23-6
Packaging	Tape and Reel
Power Supply Rejection Ratio (PSRR)	94 dB
Radiation Hardening	No
RoHS	Compliant
Schedule B	8542330000, 8542330000\|8542330000\|8542330000\|8542330000\|8542330000
Settling Time	30 ns
Slew Rate	580V/µs
Slew Rate	560 V/µs
Supplier Device Package	SOT-23-6
Thickness	1.2 mm
Input Offset Voltage	65 µV
Supply Voltage Span (Max)	5.5 V
Supply Voltage Span (Min)	2.5 V
Voltage Gain	122 dB
Width	1.6 mm

Overview

Very Low Power, Rail to Rail out, Negative Rail in, VFB Op Amp 6-SOT-23 -40 to 125

Applications

The OPA836 and OPA2836 devices are designed for the nominal value of RF to be 1 k Ω in gains other than +1. This gives excellent distortion performance, maximum bandwidth, best flatness, and best pulse response, but it also loads the amplifier. For example; in gain of 2 with R F = RG = 1 k Ω , R G to ground, and VOUT = 4 V, 2 mA of current will flow through the feedback path to ground. In gain of +1, R G is open and no current will flow to ground. In low-power applications, it is desirable to reduce the current in the feedback by increasing the gainsetting resistors values. Using larger value gain resistors has two primary side effects (other than lower power) due to their interaction with parasitic circuit capacitance:

Lowers the bandwidth
Lowers the phase margin
-This causes peaking in the frequency response
-This also causes overshoot and ringing in the pulse response

图 8-3 shows the small-signal frequency response on OPA836EVM for noninverting gain of 2 with RF and RG equal to 1 k Ω , 10 k Ω , and 100 k Ω . The test was done with RL = 1 k Ω . Due to loading effects of R L , lower RL values may reduce the peaking, but higher values will not have a significant effect.

图 8-3. Frequency Response With Various Gain-Setting Resistor Values

As expected, larger value gain resistors cause lower bandwidth and peaking in the response (peaking in the frequency response is synonymous with overshoot and ringing in the pulse response). Adding 1-pF capacitors in parallel with RF helps compensate the phase margin and restores flat frequency response. 图 8-4 shows the test circuit.

图 8-4. G = 2 Test Circuit for Various Gain-Setting Resistor Values

图 8-3. Frequency Response With Various Gain-Setting Resistor Values

Pin Configuration

Pin	Name	Type
1	VOUT	O
2	VS-	POW
3	VIN+	I
4	VIN-	I
5	PD	I
6	VS+	POW

Electrical Characteristics

at V S+ = +2.7 V, V S -= 0 V, VOUT = 1 VPP, RF = 0 Ω , R L = 2 k Ω , G = 1 V/V, input and output referenced to mid-supply, V IN_CM = mid-supply -0.5 V. TA = 25°C, unless otherwise noted.

PARAMETER	TEST CONDITIONS	TYP	UNIT	TEST LEVEL (1)
AC PERFORMANCE
Small-signal bandwidth	V OUT = 100 mV PP , G = 1	200	MHz
Small-signal bandwidth	V OUT = 100 mV PP , G = 2	100	MHz	C
Small-signal bandwidth	V OUT = 100 mV PP , G = 5	26	MHz
Small-signal bandwidth	V OUT = 100 mV PP , G = 10	11	MHz
Gain-bandwidth product	V OUT = 100 mV PP , G = 10	110	MHz	C
Large-signal bandwidth	V OUT = 1 V PP , G = 2	60	MHz	C
Bandwidth for 0.1-dB flatness	V OUT = 1 V PP , G = 2	25	MHz	C
Slew rate, rise	V OUT = 1 V STEP , G = 2	260	V/μs	C
Slew rate, fall	V OUT = 1 V STEP , G = 2	240	V/μs	C
Rise time	V OUT = 1 V STEP , G = 2	4	ns	C
Fall time	V OUT = 1 V STEP , G = 2	4.5	ns	C
Settling time to 1%, rise	V OUT = 1 V STEP , G = 2	15	ns	C
Settling time to 1%, fall	V OUT = 1 V STEP , G = 2	15	ns	C
Settling time to 0.1%, rise	V OUT = 1 V STEP , G = 2	30	ns	C
Settling time to 0.1%, fall	V OUT = 1 V STEP , G = 2	25	ns	C
Settling time to 0.01%, rise	V OUT = 1 V STEP , G = 2	50	ns	C
Settling time to 0.01%, fall	V OUT = 1 V STEP , G = 2	45	ns	C
Overshoot/Undershoot	V OUT = 1 V STEP , G = 2 f = 10 kHz, V IN_CM = mid-supply - 0.5 V	5%/3% - 133		C C
Second-order harmonic distortion	f = 100 kHz, V IN_CM = mid-supply - 0.5 V	- 120	dBc	C
Second-order harmonic distortion	f = 1 MHz, V IN_CM = mid-supply - 0.5 V f = 10 kHz, V IN_CM = mid-supply - 0.5 V	- 84 - 137		C C
Third-order harmonic distortion	f = 100 kHz, V IN_CM = mid-supply - 0.5 V f = 1 MHz, V IN_CM = mid-supply - 0.5 V	- 130 - 105	dBc	C C
Second-order intermodulation distortion	f = 1 MHz, 200-kHz Tone Spacing, V OUT Envelope = 1 V PP V IN_CM = mid-supply - 0.5 V	- 90	dBc	C
Third-order intermodulation distortion	f = 1 MHz, 200-kHz Tone Spacing, V OUT Envelope = 1 V PP V IN_CM = mid-supply - 0.5 V	- 90	dBc	C
Input voltage noise	f = 100 KHz	4.6	nV/ √ Hz	C
Voltage noise 1/f corner frequency		215	Hz	C
Input current noise	f = 1 MHz	0.75	pA/ √ Hz	C

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

		MIN	MAX	UNIT
V S - to V S+	Supply voltage		5.5	V
V I	Input voltage	V S - - 0.7	V S+ + 0.7	V
V ID	Differential input voltage		1	V
I I	Continuous input current		0.85	mA
I O	Continuous output current Continuous power dissipation	See 节 7.4 and 节 7.5	60	mA
T J	Maximum junction temperature		150	°C
T A	Operating free-air temperature	- 40	125	°C
T stg	Storage temperature	- 65	150	°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V S+	Single supply voltage	2.5	5	5.5	V
T A	Ambient temperature	- 40	25	125	°C

Thermal Information

		OPA836	OPA836
	THERMAL METRIC (1)	DBV (SOT23-6)	RUN (WQFN-10)
		6 PINS	10 PINS
R θ JA	Junction-to-ambient thermal resistance	194	145.8
R θ JC(top)	Junction-to-case (top) thermal resistance	129.2	75.1
R θ JB	Junction-to-board thermal resistance	39.4	38.9
ψ JT	Junction-to-top characterization parameter	25.6	13.5
ψ JB	Junction-to-board characterization parameter	38.9	104.5

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
OPA836	Texas Instruments	—
OPA836DBV	Texas Instruments	—
OPA836I	Texas Instruments	—
OPA836IDBVT	Texas Instruments	—
OPA836IRUN	Texas Instruments	—
OPA836IRUNR	Texas Instruments	—
OPA836IRUNT	Texas Instruments	—

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