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OPA836

The OPA836 is an electronic component from Texas Instruments. View the full OPA836 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

Amplifiers - Op Amps, Buffer, Instrumentation

Applications

The OPA836 and OPA2836 devices are designed for the nominal value of RF to be 1 k Ω in gains other than +1. This gives excellent distortion performance, maximum bandwidth, best flatness, and best pulse response, but it also loads the amplifier. For example; in gain of 2 with R F = RG = 1 k Ω , R G to ground, and VOUT = 4 V, 2 mA of current will flow through the feedback path to ground. In gain of +1, R G is open and no current will flow to ground. In low-power applications, it is desirable to reduce the current in the feedback by increasing the gainsetting resistors values. Using larger value gain resistors has two primary side effects (other than lower power) due to their interaction with parasitic circuit capacitance:

  • Lowers the bandwidth
  • Lowers the phase margin
  • -This causes peaking in the frequency response
  • -This also causes overshoot and ringing in the pulse response

图 8-3 shows the small-signal frequency response on OPA836EVM for noninverting gain of 2 with RF and RG equal to 1 k Ω , 10 k Ω , and 100 k Ω . The test was done with RL = 1 k Ω . Due to loading effects of R L , lower RL values may reduce the peaking, but higher values will not have a significant effect.

图 8-3. Frequency Response With Various Gain-Setting Resistor Values

As expected, larger value gain resistors cause lower bandwidth and peaking in the response (peaking in the frequency response is synonymous with overshoot and ringing in the pulse response). Adding 1-pF capacitors in parallel with RF helps compensate the phase margin and restores flat frequency response. 图 8-4 shows the test circuit.

图 8-4. G = 2 Test Circuit for Various Gain-Setting Resistor Values

图 8-3. Frequency Response With Various Gain-Setting Resistor Values

Pin Configuration

图 6-1. OPA2836 RUN, RMC Packages 10-Pin WQFN, UQFN Top View

图 6-1. OPA2836 RUN, RMC Packages 10-Pin WQFN, UQFN Top View

图 6-2. OPA836 RUN Package 10-Pin WQFN Top View

图 6-3. OPA2836 D Package 8-Pin SOIC Top View

图 6-4. OPA836 DBV Package 6-Pin SOT-23 Top View

图 6-5. OPA2836 DGS Package 10-Pin VSSOP Top View

表 6-1. Pin Functions

PINPINPINPINPINPINI/O
NAMEOPA836OPA836OPA2836OPA2836OPA2836I/O
NAMESOT-23WQFNSOICVSSOPWQFN, UQFNI/O
FB 1-9---I/O
FB 2-8---I/O
FB 3-7---I/O
FB 4-6---I/O
PD54---I
PD1---54I
PD2---66I
V IN+33---I
V IN -42---I
V IN1+--333I
V IN1 ---222I
V IN2+--577I
V IN2 ---688I
V OUT11---O
V OUT1--111O
V OUT2--799O
V S+61081010POW
V S -25445POW

Electrical Characteristics

at V S+ = +2.7 V, V S -= 0 V, VOUT = 1 VPP, RF = 0 Ω , R L = 2 k Ω , G = 1 V/V, input and output referenced to mid-supply, V IN_CM = mid-supply -0.5 V. TA = 25°C, unless otherwise noted.

PARAMETERTEST CONDITIONSMINTYPMAXUNITTEST LEVEL (1)
AC PERFORMANCE
Small-signal bandwidthV OUT = 100 mV PP , G = 1200MHz
Small-signal bandwidthV OUT = 100 mV PP , G = 2100MHzC
Small-signal bandwidthV OUT = 100 mV PP , G = 526MHz
Small-signal bandwidthV OUT = 100 mV PP , G = 1011MHz
Gain-bandwidth productV OUT = 100 mV PP , G = 10110MHzC
Large-signal bandwidthV OUT = 1 V PP , G = 260MHzC
Bandwidth for 0.1-dB flatnessV OUT = 1 V PP , G = 225MHzC
Slew rate, riseV OUT = 1 V STEP , G = 2260V/μsC
Slew rate, fallV OUT = 1 V STEP , G = 2240V/μsC
Rise timeV OUT = 1 V STEP , G = 24nsC
Fall timeV OUT = 1 V STEP , G = 24.5nsC
Settling time to 1%, riseV OUT = 1 V STEP , G = 215nsC
Settling time to 1%, fallV OUT = 1 V STEP , G = 215nsC
Settling time to 0.1%, riseV OUT = 1 V STEP , G = 230nsC
Settling time to 0.1%, fallV OUT = 1 V STEP , G = 225nsC
Settling time to 0.01%, riseV OUT = 1 V STEP , G = 250nsC
Settling time to 0.01%, fallV OUT = 1 V STEP , G = 245nsC
Overshoot/UndershootV OUT = 1 V STEP , G = 2
f = 10 kHz, V IN_CM = mid-supply - 0.5 V
5%/3%
- 133
C
C
Second-order harmonic distortionf = 100 kHz, V IN_CM = mid-supply - 0.5 V- 120dBcC
Second-order harmonic distortionf = 1 MHz, V IN_CM = mid-supply - 0.5 V
f = 10 kHz, V IN_CM = mid-supply - 0.5 V
- 84
- 137
C
C
Third-order harmonic distortionf = 100 kHz, V IN_CM = mid-supply - 0.5 V
f = 1 MHz, V IN_CM = mid-supply - 0.5 V
- 130
- 105
dBcC
C
Second-order intermodulation distortionf = 1 MHz, 200-kHz Tone Spacing, V OUT Envelope = 1 V PP V IN_CM = mid-supply - 0.5 V- 90dBcC
Third-order intermodulation distortionf = 1 MHz, 200-kHz Tone Spacing, V OUT Envelope = 1 V PP V IN_CM = mid-supply - 0.5 V- 90dBcC
Input voltage noisef = 100 KHz4.6nV/ √ HzC
Voltage noise 1/f corner frequency215HzC
Input current noisef = 1 MHz0.75pA/ √ HzC

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
V S - to V S+Supply voltage5.5V
V IInput voltageV S - - 0.7V S+ + 0.7V
V IDDifferential input voltage1V
I IContinuous input current0.85mA
I OContinuous output current
Continuous power dissipation
See 节 7.4 and 节 7.560mA
T JMaximum junction temperature150°C
T AOperating free-air temperature- 40125°C
T stgStorage temperature- 65150°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
V S+Single supply voltage2.555.5V
T AAmbient temperature- 4025125°C

Thermal Information

OPA836OPA836
THERMAL METRIC (1)DBV (SOT23-6)RUN (WQFN-10)
6 PINS10 PINS
R θ JAJunction-to-ambient thermal resistance194145.8
R θ JC(top)Junction-to-case (top) thermal resistance129.275.1
R θ JBJunction-to-board thermal resistance39.438.9
ψ JTJunction-to-top characterization parameter25.613.5
ψ JBJunction-to-board characterization parameter38.9104.5

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
OPA836DBVTexas Instruments
OPA836ITexas Instruments
OPA836IDBVRTexas InstrumentsSOT-23-6
OPA836IDBVTTexas Instruments
OPA836IRUNTexas Instruments
OPA836IRUNRTexas Instruments
OPA836IRUNTTexas Instruments
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