OPA836
The OPA836 is an electronic component from Texas Instruments. View the full OPA836 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Amplifiers - Op Amps, Buffer, Instrumentation
Applications
The OPA836 and OPA2836 devices are designed for the nominal value of RF to be 1 k Ω in gains other than +1. This gives excellent distortion performance, maximum bandwidth, best flatness, and best pulse response, but it also loads the amplifier. For example; in gain of 2 with R F = RG = 1 k Ω , R G to ground, and VOUT = 4 V, 2 mA of current will flow through the feedback path to ground. In gain of +1, R G is open and no current will flow to ground. In low-power applications, it is desirable to reduce the current in the feedback by increasing the gainsetting resistors values. Using larger value gain resistors has two primary side effects (other than lower power) due to their interaction with parasitic circuit capacitance:
- Lowers the bandwidth
- Lowers the phase margin
- -This causes peaking in the frequency response
- -This also causes overshoot and ringing in the pulse response
图 8-3 shows the small-signal frequency response on OPA836EVM for noninverting gain of 2 with RF and RG equal to 1 k Ω , 10 k Ω , and 100 k Ω . The test was done with RL = 1 k Ω . Due to loading effects of R L , lower RL values may reduce the peaking, but higher values will not have a significant effect.
图 8-3. Frequency Response With Various Gain-Setting Resistor Values
As expected, larger value gain resistors cause lower bandwidth and peaking in the response (peaking in the frequency response is synonymous with overshoot and ringing in the pulse response). Adding 1-pF capacitors in parallel with RF helps compensate the phase margin and restores flat frequency response. 图 8-4 shows the test circuit.
图 8-4. G = 2 Test Circuit for Various Gain-Setting Resistor Values
图 8-3. Frequency Response With Various Gain-Setting Resistor Values
Pin Configuration
图 6-1. OPA2836 RUN, RMC Packages 10-Pin WQFN, UQFN Top View
图 6-1. OPA2836 RUN, RMC Packages 10-Pin WQFN, UQFN Top View
图 6-2. OPA836 RUN Package 10-Pin WQFN Top View
图 6-3. OPA2836 D Package 8-Pin SOIC Top View
图 6-4. OPA836 DBV Package 6-Pin SOT-23 Top View
图 6-5. OPA2836 DGS Package 10-Pin VSSOP Top View
表 6-1. Pin Functions
| PIN | PIN | PIN | PIN | PIN | PIN | I/O |
|---|---|---|---|---|---|---|
| NAME | OPA836 | OPA836 | OPA2836 | OPA2836 | OPA2836 | I/O |
| NAME | SOT-23 | WQFN | SOIC | VSSOP | WQFN, UQFN | I/O |
| FB 1 | - | 9 | - | - | - | I/O |
| FB 2 | - | 8 | - | - | - | I/O |
| FB 3 | - | 7 | - | - | - | I/O |
| FB 4 | - | 6 | - | - | - | I/O |
| PD | 5 | 4 | - | - | - | I |
| PD1 | - | - | - | 5 | 4 | I |
| PD2 | - | - | - | 6 | 6 | I |
| V IN+ | 3 | 3 | - | - | - | I |
| V IN - | 4 | 2 | - | - | - | I |
| V IN1+ | - | - | 3 | 3 | 3 | I |
| V IN1 - | - | - | 2 | 2 | 2 | I |
| V IN2+ | - | - | 5 | 7 | 7 | I |
| V IN2 - | - | - | 6 | 8 | 8 | I |
| V OUT | 1 | 1 | - | - | - | O |
| V OUT1 | - | - | 1 | 1 | 1 | O |
| V OUT2 | - | - | 7 | 9 | 9 | O |
| V S+ | 6 | 10 | 8 | 10 | 10 | POW |
| V S - | 2 | 5 | 4 | 4 | 5 | POW |
Electrical Characteristics
at V S+ = +2.7 V, V S -= 0 V, VOUT = 1 VPP, RF = 0 Ω , R L = 2 k Ω , G = 1 V/V, input and output referenced to mid-supply, V IN_CM = mid-supply -0.5 V. TA = 25°C, unless otherwise noted.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | TEST LEVEL (1) |
|---|---|---|---|---|---|---|
| AC PERFORMANCE | ||||||
| Small-signal bandwidth | V OUT = 100 mV PP , G = 1 | 200 | MHz | |||
| Small-signal bandwidth | V OUT = 100 mV PP , G = 2 | 100 | MHz | C | ||
| Small-signal bandwidth | V OUT = 100 mV PP , G = 5 | 26 | MHz | |||
| Small-signal bandwidth | V OUT = 100 mV PP , G = 10 | 11 | MHz | |||
| Gain-bandwidth product | V OUT = 100 mV PP , G = 10 | 110 | MHz | C | ||
| Large-signal bandwidth | V OUT = 1 V PP , G = 2 | 60 | MHz | C | ||
| Bandwidth for 0.1-dB flatness | V OUT = 1 V PP , G = 2 | 25 | MHz | C | ||
| Slew rate, rise | V OUT = 1 V STEP , G = 2 | 260 | V/μs | C | ||
| Slew rate, fall | V OUT = 1 V STEP , G = 2 | 240 | V/μs | C | ||
| Rise time | V OUT = 1 V STEP , G = 2 | 4 | ns | C | ||
| Fall time | V OUT = 1 V STEP , G = 2 | 4.5 | ns | C | ||
| Settling time to 1%, rise | V OUT = 1 V STEP , G = 2 | 15 | ns | C | ||
| Settling time to 1%, fall | V OUT = 1 V STEP , G = 2 | 15 | ns | C | ||
| Settling time to 0.1%, rise | V OUT = 1 V STEP , G = 2 | 30 | ns | C | ||
| Settling time to 0.1%, fall | V OUT = 1 V STEP , G = 2 | 25 | ns | C | ||
| Settling time to 0.01%, rise | V OUT = 1 V STEP , G = 2 | 50 | ns | C | ||
| Settling time to 0.01%, fall | V OUT = 1 V STEP , G = 2 | 45 | ns | C | ||
| Overshoot/Undershoot | V OUT = 1 V STEP , G = 2 f = 10 kHz, V IN_CM = mid-supply - 0.5 V | 5%/3% - 133 | C C | |||
| Second-order harmonic distortion | f = 100 kHz, V IN_CM = mid-supply - 0.5 V | - 120 | dBc | C | ||
| Second-order harmonic distortion | f = 1 MHz, V IN_CM = mid-supply - 0.5 V f = 10 kHz, V IN_CM = mid-supply - 0.5 V | - 84 - 137 | C C | |||
| Third-order harmonic distortion | f = 100 kHz, V IN_CM = mid-supply - 0.5 V f = 1 MHz, V IN_CM = mid-supply - 0.5 V | - 130 - 105 | dBc | C C | ||
| Second-order intermodulation distortion | f = 1 MHz, 200-kHz Tone Spacing, V OUT Envelope = 1 V PP V IN_CM = mid-supply - 0.5 V | - 90 | dBc | C | ||
| Third-order intermodulation distortion | f = 1 MHz, 200-kHz Tone Spacing, V OUT Envelope = 1 V PP V IN_CM = mid-supply - 0.5 V | - 90 | dBc | C | ||
| Input voltage noise | f = 100 KHz | 4.6 | nV/ √ Hz | C | ||
| Voltage noise 1/f corner frequency | 215 | Hz | C | |||
| Input current noise | f = 1 MHz | 0.75 | pA/ √ Hz | C |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| V S - to V S+ | Supply voltage | 5.5 | V | |
| V I | Input voltage | V S - - 0.7 | V S+ + 0.7 | V |
| V ID | Differential input voltage | 1 | V | |
| I I | Continuous input current | 0.85 | mA | |
| I O | Continuous output current Continuous power dissipation | See 节 7.4 and 节 7.5 | 60 | mA |
| T J | Maximum junction temperature | 150 | °C | |
| T A | Operating free-air temperature | - 40 | 125 | °C |
| T stg | Storage temperature | - 65 | 150 | °C |
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| V S+ | Single supply voltage | 2.5 | 5 | 5.5 | V |
| T A | Ambient temperature | - 40 | 25 | 125 | °C |
Thermal Information
| OPA836 | OPA836 | ||
|---|---|---|---|
| THERMAL METRIC (1) | DBV (SOT23-6) | RUN (WQFN-10) | |
| 6 PINS | 10 PINS | ||
| R θ JA | Junction-to-ambient thermal resistance | 194 | 145.8 |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 129.2 | 75.1 |
| R θ JB | Junction-to-board thermal resistance | 39.4 | 38.9 |
| ψ JT | Junction-to-top characterization parameter | 25.6 | 13.5 |
| ψ JB | Junction-to-board characterization parameter | 38.9 | 104.5 |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| OPA836DBV | Texas Instruments | — |
| OPA836I | Texas Instruments | — |
| OPA836IDBVR | Texas Instruments | SOT-23-6 |
| OPA836IDBVT | Texas Instruments | — |
| OPA836IRUN | Texas Instruments | — |
| OPA836IRUNR | Texas Instruments | — |
| OPA836IRUNT | Texas Instruments | — |
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