LM358

Industry-Standard Dual Operational Amplifiers

Manufacturer

Texas Instruments

Overview

Part: LM358B, LM358BA, LM2904B, LM2904BA Dual Operational Amplifiers

Type: Dual Operational Amplifier

Key Specs:

  • Wide supply range: 3V to 36V (B, BA versions)
  • Quiescent current: 300µA/ch (B, BA versions)
  • Unity-gain bandwidth: 1.2MHz (B

Features

  • Wide supply range of 3V to 36V (B, BA versions)
  • Quiescent current: 300µA/ch (B, BA versions)
  • Unity-gain bandwidth of 1.2MHz (B. BA versions)
  • Common-mode input voltage range includes ground, enabling direct sensing near ground
  • 2mV input offset voltage maximum at 25°C (BA
  • 3mV input offset voltage maximum at 25°C (A, B versions)
  • Internal RF and EMI filter (B, BA versions)
  • On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other products, production processing does not necessarily include testing of all parameters.

Applications

  • Merchant network and server power supply units
  • Multi-function printers
  • Power supplies and mobile chargers
  • Motor control: AC induction, brushed DC, brushless DC, high-voltage, low-voltage, permanent magnet, and stepper motor
  • Desktop PC and motherboard
  • Indoor and outdoor air conditioners
  • · Washers, dryers, and refrigerators
  • · AC inverters, string inverters, central inverters, and voltage frequency drives
  • Uninterruptible power supplies
  • Electronic point-of-sale systems

3 Description

The LM358B and LM2904B devices are the next-generation versions of the industry-standard operational amplifiers (op amps) LM358 and LM2904, which include two high-voltage (36V) op amps. These

devices provide outstanding value for cost-sensitive applications, with features including low offset (300µV, typical), common-mode input range to ground, and high differential input voltage capability.

The LM358B and LM2904B op amps simplify circuit design with enhanced features such as unity-gain stability, lower offset voltage maximum of 3mV (2mV maximum for LM358BA and LM2904BA), and lower quiescent current of 300µA per amplifier (typical). High ESD (2kV, HBM) and integrated EMI and RF filters enable the LM358B and LM2904B devices to be used in the most rugged, environmentally challenging applications.

The LM358B and LM2904B amplifiers are available in micro-sized packaging, such as the SOT23-8, as well as industry standard packages including SOIC, TSSOP, and VSSOP.

Pin Configuration

Figure 4-1. D, DDF, DGK, P, PS, PW, and JG Package 8-Pin SOIC, SOT23-8, VSSOP, PDIP, SO, TSSOP, and CDIP Top View

NC - No internal connection

Figure 4-2. FK Package 20-Pin LCCC Top View

Table 4-1. Pin Functions

| | | PIN | |------|---------------------------------------------|--------------------------------------------------------|-----|---------------------------------------------------------------------| | NAME | LCCC(1) | SOIC, SOT23-8, VSSOP, CDIP,
PDIP, SO, TSSOP, CFP(1) | I/O | DESCRIPTION | | IN1– | 5 | 2 | I | Negative input | | IN1+ | 7 | 3 | I | Positive input | | IN2– | 15 | 6 | I | Negative input | | IN2+ | 12 | 5 | I | Positive input | | OUT1 | 2 | 1 | O | Output | | OUT2 | 17 | 7 | O | Output | | V– | 10 | 4 | — | Negative (lowest) supply or ground (for single
supply operation) | | NC | 1, 3, 4, 6, 8, 9, 11,
13, 14, 16, 18, 19 | — | — | No internal connection | | V+ | 20 | 8 | — | Positive (highest) supply |

(1) For a listing of which devices are available in what packages, see Section 3.

Electrical Characteristics

VS = (V+) – (V–) = 5 V – 36 V (±2.5 V – ±18 V), TA = 25°C, VCM = VOUT = VS / 2, RL = 10k connected to VS / 2 (unless otherwise noted)

| | (unless otherwise noted) | |---------|-----------------------------------|---------------------------------------------------|--------------------------------------------------------------------------------------|------------------------|------|-----------|------------|---------| | | PARAMETER | | MIN | TYP | MAX | UNIT | | | OFFSET VOLTAGE | | | | | | | | ±0.3 | ±3.0 | mV | | | | LM358B | | TA = –40°C to +85°C | | | ±4 | mV | | VOS | Input offset voltage | | | | | | ±2.0 | mV | | | | LM358BA | | TA = –40°C to +85°C | | | ±2.5 | mV | | dVOS/dT | Input offset voltage drift | | | TA = -40°C to +85°C(1) | | ±3.5 | 11 | µV/°C | | PSRR | Power supply rejection ratio | | | | | ±2 | 15 | µV/V | | | Channel separation, dc | f = 1 kHz to 20 kHz | | | | ±1 | | µV/V | | | INPUT VOLTAGE RANGE | | | | VS = 3 V to 36 V | | | (V–) | | (V+) – 1.5 | V | | VCM | Common-mode voltage range | VS = 5 V to 36 V | | TA = –40°C to +85°C | (V–) | | (V+) – 2 | V | | | | (V–) ≤ VCM ≤ (V+) – 1.5 V VS = 3 V to 36 V | | | | 20 | 100 | | CMRR | Common-mode rejection ratio | | | | | 25 | 316 | µV/V | | | | (V–) ≤ VCM ≤ (V+) – 2.0 V VS = 5 V to 36 V | | TA = –40°C to +85°C | | | INPUT BIAS CURRENT | | IB | Input bias current | | | | | –10 | –35 | nA | | | | | | TA = –40°C to +85°C(1) | | | –50 | nA | | IOS | Input offset current | | | | | 0.5 | 4 | nA | | | | | | TA = –40°C to +85°C(1) | | | 5 | nA | | dIOS/dT | Input offset current drift | | | TA = –40°C to +85°C | | 10 | | pA/℃ | | NOISE | | En | Input voltage noise | f = 0.1 to 10 Hz | | | | 3 | | µVPP | | en | Input voltage noise density | f = 1 kHz | | | | 40 | | nV/√/Hz | | | INPUT IMPEDANCE | | ZID | Differential | | | | | 10 0.1 | | MΩ pF | | ZIC | Common-mode | | | | | 4 1.5 | | GΩ pF | | | OPEN-LOOP GAIN | | | | | | | 70 | 140 | | V/mV | | AOL | Open-loop voltage gain | | VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V–) | TA = –40°C to +85°C | 35 | | | V/mV | | | FREQUENCY RESPONSE | | GBW | Gain bandwidth product | | | | | 1.2 | | MHz | | SR | Slew rate | G = + 1 | | | | 0.5 | | V/µs | | Θm | Phase margin | G = + 1, RL = 10kΩ, CL = 20 pF | | | | 56 | | ° | | tOR | Overload recovery time | VIN × gain > VS | | | | 10 | | µs | | ts | Settling time | To 0.1%, VS = 5 V, 2-V step , G = +1, CL = 100 pF | | | | 4 | | µs | | THD+N | Total harmonic distortion + noise | | G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36 V, RL = 100k, IOUT ≤ ±50 µA, BW = 80 kHz | | | 0.001 | | % | | OUTPUT | | | | | | IOUT = 50 µA | | 1.35 | 1.42 | V | | | | Positive rail (V+) | | IOUT = 1 mA | | 1.4 | 1.48 | V | | VO | Voltage output swing from rail | | | IOUT = 5 mA(1) | | 1.5 | 1.61 | V | | | | | | IOUT = 50 µA | | 100 | 150 | mV | | | | Negative rail (V–) | | IOUT = 1 mA | | 0.75 | 1 | V | | | | | VS = 5 V, RL ≤ 10 kΩ connected to (V–) | TA = –40°C to +85°C | | 5 | 20 | mV | | | | VS = 15 V; VO = V–; | Source(1) | | -20 | -30 | | | | VID = 1 V | | TA = –40°C to +85°C | -10 | | IO | Output current | VS = 15 V; VO = V+; | | | 10 | 20 | | mA | | | | VID = –1 V | Sink(1) | TA = –40°C to +85°C | 5 | | | | VID = –1 V; VO = (V–) + 200 mV | | | 60 | 100 | | μA | | ISC | Short-circuit current | VS = 20 V, (V+) = 10 V, (V–) = –10 V, VO = 0 V | | | | ±40 | ±60 | mA | | CLOAD | Capacitive load drive | | | | | 100 | | pF | | | Open-loop output resistance | | | | | 300 | | Ω | | RO | | f = 1 MHz, IO = 0 A |

Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted)(1)

MINMAXUNIT
LM358B, LM358BA,
LM2904B, LM2904BA
±20 or 40
Supply voltage, VS = ([V+] – [V–])LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
±16 or 32V
LM2904±13 or 26
(2)
Differential input voltage, VID
LM358B, LM358BA,
LM2904B, LM2904BA,LM158,
LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
–3232V
LM2904–2626
LM358B, LM358BA,
LM2904B, LM2904BA
–0.340
Input voltage, VIEither inputLM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
–0.332V
LM2904–0.326
Duration of output short circuit (one amplifier) to ground at (or below) TA = 25°C,
VS ≤ 15 V(3)
Unlimiteds
LM158, LM158A–55125
LM258, LM258A–2585
Operating ambient temperature, TALM358B, LM358BA–4085°C
LM358, LM358A070
LM2904B, LM2904BA,
LM2904, LM2904V
–40125
Operating virtual-junction temperature, TJ150°C
Storage temperature, Tstg–65150°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5.2 ESD Ratings

VALUEUNIT
LM358B, LM358BA, LM2904B, AND LM2904BA
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±2000
V(ESD)Electrostatic dischargeCharged-device model (CDM), per JEDEC specification JESD22-C101(2)±1500V
LM158, LM258, LM358, LM158, LM258A, LM358A, LM2904, AND LM2904V
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±500
V(ESD)Electrostatic dischargeCharged-device model (CDM), per JEDEC specification JESD22-C101(2)±1000V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) Differential voltages are at IN+, with respect to IN−.

(3) Short circuits from outputs to VS can cause excessive heating and eventual destruction.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MINMAXUNIT
LM358B, LM358BA, LM2904B,
LM2904BA
336
VsSupply voltage, $V_S = ([V+] - [V-])$LM158, LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
330V
LM2904326
V CMCommon-mode voltageV-V+ - 2V
LM358B, LM358BA-4085
_Operating ambient temperatureLM2904B, LM2904BA, LM2904,
LM2904V
-40125
T ALM358, LM358A070°C
LM258, LM258A-2085
LM158, LM158A-55125

5.4 Thermal Information

| | | LM258, LM | 258A, LM358 | | //358B, LM35
LM2904V (2) | 8BA, LM2904 | , LM2904B, | LM158, | LM158A | |-----------------------|----------------------------------------------------|-------------|----------------|-------------|----------------------------------------|---------------|-----------------|--------------|--------------|------| | TІ | HERMAL METRIC (1) | D
(SOIC) | DGK
(VSSOP) | P
(PDIP) | PS
(SO) | PW
(TSSOP) | DDF
(SOT-23) | FK
(LCCC) | JG
(CDIP) | UNIT | | | | 8 PINS | 8 PINS | 8 PINS | 8 PINS | 8 PINS | 8PINS | 20 PINS | 8 PINS | | R θJA | Junction-to-ambient thermal resistance | 124.7 | 181.4 | 80.9 | 116.9 | 171.7 | 164.3 | 84.0 | 112.4 | °C/W | | R θJC(top) | Junction-to-case (top) thermal resistance | 66.9 | 69.4 | 70.4 | 62.5 | 68.8 | 98.1 | 56.9 | 63.6 | °C/W | | R θJB | Junction-to-board thermal resistance | 67.9 | 102.9 | 57.4 | 68.6 | 99.2 | 82.1 | 57.5 | 100.3 | °C/W | | ΨЈT | Junction-to-top
characterization
parameter | 19.2 | 11.8 | 40 | 21.9 | 11.5 | 11.4 | 51.7 | 35.7 | °C/W | | ΨЈB | Junction-to-board
characterization
parameter | 67.2 | 101.2 | 56.9 | 67.6 | 97.9 | 81.7 | 57.1 | 93.3 | °C/W | | R 0JC(bot) | Junction-to-case (bottom) thermal resistance | _ | _ | _ | _ | _ | _ | 10.6 | 22.3 | °C/W |

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2) For a listing of which devices are available in what packages, see Section 3.

Thermal Information

| | | LM258, LM | 258A, LM358 | | //358B, LM35
LM2904V (2) | 8BA, LM2904 | , LM2904B, | LM158, | LM158A | |-----------------------|----------------------------------------------------|-------------|----------------|-------------|----------------------------------------|---------------|-----------------|--------------|--------------|------| | TІ | HERMAL METRIC (1) | D
(SOIC) | DGK
(VSSOP) | P
(PDIP) | PS
(SO) | PW
(TSSOP) | DDF
(SOT-23) | FK
(LCCC) | JG
(CDIP) | UNIT | | | | 8 PINS | 8 PINS | 8 PINS | 8 PINS | 8 PINS | 8PINS | 20 PINS | 8 PINS | | R θJA | Junction-to-ambient thermal resistance | 124.7 | 181.4 | 80.9 | 116.9 | 171.7 | 164.3 | 84.0 | 112.4 | °C/W | | R θJC(top) | Junction-to-case (top) thermal resistance | 66.9 | 69.4 | 70.4 | 62.5 | 68.8 | 98.1 | 56.9 | 63.6 | °C/W | | R θJB | Junction-to-board thermal resistance | 67.9 | 102.9 | 57.4 | 68.6 | 99.2 | 82.1 | 57.5 | 100.3 | °C/W | | ΨЈT | Junction-to-top
characterization
parameter | 19.2 | 11.8 | 40 | 21.9 | 11.5 | 11.4 | 51.7 | 35.7 | °C/W | | ΨЈB | Junction-to-board
characterization
parameter | 67.2 | 101.2 | 56.9 | 67.6 | 97.9 | 81.7 | 57.1 | 93.3 | °C/W | | R 0JC(bot) | Junction-to-case (bottom) thermal resistance | _ | _ | _ | _ | _ | _ | 10.6 | 22.3 | °C/W |

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2) For a listing of which devices are available in what packages, see Section 3.

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