NTA/NTE4151P
Small Signal MOSFET
Manufacturer
ON Semiconductor
Overview
Part: ON Semiconductor Small Signal MOSFET
Type: Single P-Channel Small Signal MOSFET
Key Specs:
- Drain-to-Source Voltage: -20 V
- Continuous Drain Current: -760 mA
- Typical RDS(on) @ VGS = -4.5 V: 0.26 Ω
- Gate-to-Source ESD Rating (Human Body Model): 1800 V
- Power Dissipation (SC-75): 301 mW
- Power Dissipation (SC-89): 313 mW
Features:
- Low RDS(on) for Higher Efficiency and Longer Battery Life
- Small Outline Package (1.6 x 1.6 mm)
- SC-75 Standard Gullwing Package
- ESD Protected Gate
- Pb-Free Packages are Available
Applications:
- High Side Load Switch
- DC-DC Conversion
- Small Drive Circuits
- Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
Package:
- SC-75: 1.6 x 1.6 mm
- SC-89: Small Outline Package
Features
- Low RDS(on) for Higher Efficiency and Longer Battery Life
- Small Outline Package (1.6 x 1.6 mm)
- SC-75 Standard Gullwing Package
- ESD Protected Gate
- Pb-Free Packages are Available
Applications
- High Side Load Switch
- DC-DC Conversion
- Small Drive Circuits
- Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc.
Pin Configuration
SC-89 CASE 463C
xx = Device Code M = Date Code* = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Electrical Characteristics
| Parameter | er Symbol Test Condition | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | • | |||||
| Drain-to-Source Breakdown Voltage | V (BR)DSS | VGS = 0 V, ID = -250 μ A | -20 | V | ||
| Zero Gate Voltage Drain Current | I DSS | VGS = 0 V, VDS = -16 V | -1.0 | -100 | nA | |
| Gate-to-Source Leakage Current | I GSS | VDS = 0 V, VGS = ± 4.5 V | ± 1.0 | ± 10 | μΑ | |
| ON CHARACTERISTICS (Note 2) | • | • | ||||
| Gate Threshold Voltage | V GS(TH) | VDS = VGS, ID = -250 μ A | -0.45 | V | ||
| Drain-to-Source On Resistance | R DS(on) | VGS = -4.5 V, ID = -350 mA | 0.26 | 0.36 | Ω | |
| VGS = -2.5 V, ID = -300 mA | 0.35 | 0.45 | ||||
| VGS = -1.8 V, ID = -150 mA | 0.49 | 1.0 | ||||
| Forward Transconductance | 9FS | VDS = -10 V, ID = -250 mA | 0.4 | S | ||
| CHARGES AND CAPACITANCES | • | • | ||||
| Input Capacitance | C ISS | VGS = 0 V, f = 1.0 MHz, | 156 | pF | ||
| Output Capacitance | C OSS | VDS = -5.0 V | 28 | |||
| Reverse Transfer Capacitance | C RSS | 1 | 18 | |||
| Total Gate Charge | Q G(TOT) | VGS = -4.5 V, VDD = -10 V, ID = -0.3 A | 2.1 | nC | ||
| Threshold Gate Charge | Q G(TH) | ID = -0.3 A | 0.125 | 1 | ||
| Gate-to-Source Charge | Q GS | 1 | 0.325 | |||
| Gate-to-Drain Charge | QGD | 0.5 | ||||
| SWITCHING CHARACTERISTICS (Note | : 3) | • | • | |||
| Turn-On Delay Time | td (ON) | VGS = -4.5 V, VDD = -10 V, | 8.0 | ns | ||
| Rise Time | t r | ID = -200 mA, RG = 10 Ω | 8.2 | |||
| Turn-Off Delay Time | td (OFF) | 1 | 29 | 1 | ||
| Fall Time | t f | 1 | 20.4 | |||
| DRAIN-SOURCE DIODE CHARACTER | ISTICS | • | ||||
| Forward Diode Voltage | VSD | VGS = 0 V, IS = -250 mA | -0.72 | -1.1 | V |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±6.0 | |
| Continuous Drain Current (Note 1) Steady State | I D –760 | ||
| Power Dissipation (Note 1) SC-75 SC-89 Steady State | P D | 301 313 | |
| Pulsed Drain Current tp =10 μs | I DM | ±1000 | |
| Operating Junction and Storag | T J , T STG | –55 to 150 | °C |
| Continuous Source Current (Bo | I S | -250 | mA |
| Lead Temperature for Soldering (1/8 in from case for 10 s) | T L | 260 | °C |
| Gate-to-Source ESD Rating - (Human Body Model | ESD | 1800 | V |
Thermal Information
| Junction-to-Ambient - Steady State (Note 1) | Rθ JA | °C/W | |
|---|---|---|---|
| SC-75 | 415 | ||
| SC-89 | 400 |
Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| NTA4151PT1 | ON Semiconductor | — |
| NTA4151PT1G | ON Semiconductor | SC-75(SOT-416) |
| NTE4151PT1G | ON Semiconductor | — |
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