Part: MMBT2907ALT1G — onsemi

Type: PNP Silicon General Purpose Transistor

Description: PNP silicon general purpose transistor with -60 V collector-emitter voltage, -600 mA continuous collector current, and a current-gain bandwidth product of 200 MHz.

Operating Conditions:

• Operating temperature: -55 to +150 °C
• Collector-Emitter Breakdown Voltage: -60 Vdc (I_C = -1.0 mAdc, I_B = 0)
• Continuous Collector Current: -600 mAdc

Absolute Maximum Ratings:

• Max Collector-Emitter Voltage: -60 Vdc
• Max Collector-Base Voltage: -60 Vdc
• Max Emitter-Base Voltage: -5 Vdc
• Max continuous collector current: -600 mAdc
• Max junction and storage temperature: +150 °C

Key Specs:

• Collector-Emitter Breakdown Voltage (V(BR)CEO): -60 Vdc (I_C = -1.0 mAdc, I_B = 0)
• DC Current Gain (h_FE): 100 min (I_C = -150 mAdc, V_CE = -10 Vdc)
• Collector-Emitter Saturation Voltage (V_CE(sat)): -0.4 Vdc max (I_C = -150 mAdc, I_B = -15 mAdc)
• Base-Emitter Saturation Voltage (V_BE(sat)): -1.3 Vdc max (I_C = -150 mAdc, I_B = -15 mAdc)
• Current-Gain - Bandwidth Product (f_T): 200 MHz min (I_C = -50 mAdc, V_CE = -20 Vdc, f = 100 MHz)
• Output Capacitance (C_obo): 8.0 pF max (V_CB = -10 Vdc, I_E = 0, f = 1.0 MHz)
• Turn-On Time (t_on): 45 ns max (V_CC = -30 Vdc, I_C = -150 mAdc, I_B1 = -15 mAdc)
• Turn-Off Time (t_off): 100 ns max

Features:

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Package:

• SOT-23 (TO-236AB)

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

MMBT2907ALT1G — SOT-23 Pinout

Notes

• Device Type: PNP Silicon Transistor
• Package: SOT-23 (TO-236AB), 3-pin
• Pin Configuration: Standard PNP transistor with Base (pin 1), Emitter (pin 2), and Collector (pin 3)
• Maximum Ratings: V_CEO = −60 V, I_C = −600 mA (continuous), P_D = 225 mW @ 25°C
• All pin assignments derived from the SOT-23 package diagram provided in the datasheet

1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
2. f T is defined as the frequency at which |h fe | extrapolates to unity.

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. FR-5 = 1.0 -0.75 -0.062 in.
2. Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
3. Reference SOA curve.
4. Heat Spreader or equivalent = 450 mm 2 , 2 oz.