MMBT2907ALT1G
PNP Silicon General Purpose TransistorThe MMBT2907ALT1G is a pnp silicon general purpose transistor from onsemi. View the full MMBT2907ALT1G datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official MMBT2907ALT1G datasheet (PDF) — the source this page was extracted from.
MMBT2907ALT1G Key Specifications
| Parameter | Value |
|---|---|
| Collector - Emitter Voltage VCEO | 60V |
| Collector Current (Max) | 600 mA |
| Current - Collector Cutoff | 10nA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| Current - Collector(Ic) | 600mA |
| DC Current Gain | 75 |
| DC Current Gain (hFE) | 100 @ 150mA, 10V |
| Emitter-Base Voltage VEBO | 5V |
| Transition Frequency | 200MHz |
| Mounting Type | Surface Mount |
| Number | 1 PNP |
| Operating Temperature | -55℃~+150℃ °C |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | MouseReel |
| Pd - Power Dissipation | 350mW |
| Power (Max) | 300 mW |
| Standard Pack Qty | 3000 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Type | PNP |
| Transition frequency(fT) | 200MHz |
| type | PNP |
| Vce Saturation | 1.6V @ 50mA, 500mA |
| Vce Saturation(VCE(sat)) | 1.6V |
| Collector-Emitter Breakdown Voltage | 60 V |
MMBT2907ALT1G Overview
Part: MMBT2907ALT1G — onsemi
Type: PNP Silicon General Purpose Transistor
Description: PNP general-purpose bipolar transistor with -60 V VCEO, -600 mA continuous collector current, and 200 MHz minimum transition frequency in a SOT-23 package.
Operating Conditions:
- Supply voltage: not applicable
- Operating temperature: -55 to +150 °C (junction and storage temperature)
- Collector current: up to -600 mAdc continuous
Absolute Maximum Ratings:
- Collector-emitter voltage (VCEO): -60 Vdc
- Collector-base voltage (VCBO): -60 Vdc
- Emitter-base voltage (VEBO): -5.0 Vdc
- Max continuous collector current: -600 mAdc (peak: -1200 mAdc)
- Max junction/storage temperature: -55 to +150 °C
Key Specs:
- DC current gain (hFE): 100 min at IC = -150 mA, VCE = -10 V (300 max); 50 min at IC = -500 mA
- VCE(sat): -0.4 V max at IC = -150 mA, IB = -15 mA; -1.6 V max at IC = -500 mA, IB = -50 mA
- VBE(sat): -1.3 V max at IC = -150 mA, IB = -15 mA; -2.6 V max at IC = -500 mA, IB = -50 mA
- Transition frequency (fT): 200 MHz min at IC = -50 mA, VCE = -20 V, f = 100 MHz
- Output capacitance (Cobo): 8.0 pF max at VCB = -10 V, f = 1 MHz
- Collector cutoff current (ICBO): -0.010 μAdc max at VCB = -50 V; -10 μAdc at TA = 125 °C
- Turn-on time: 45 ns max; turn-off time: 100 ns max (VCC = -30 V, IC = -150 mA, IB1 = -15 mA)
- Power dissipation: 225 mW on FR-5 board at TA = 25 °C; RθJA 556 °C/W
Features:
- Pb-Free, Halogen Free/BFR Free and RoHS compliant
- S-prefix variants for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
Package:
- SOT-23 (TO-236AB), Case 318, 3 pins (Style 6: 1 Base, 2 Emitter, 3 Collector)
MMBT2907ALT1G Features
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMBT2907ALT1G Electrical Characteristics
| Characteristic | Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Collector-Emitter Breakdown Voltage (Note 5) (I C = -1.0 mAdc, I B = 0) (I C = -10 mAdc, I B = 0) | Collector-Emitter Breakdown Voltage (Note 5) (I C = -1.0 mAdc, I B = 0) (I C = -10 mAdc, I B = 0) | V (BR)CEO | -60 -60 | - - | Vdc |
| Collector-Base Breakdown Voltage (I C = -10 m Adc, I E = 0) | Collector-Base Breakdown Voltage (I C = -10 m Adc, I E = 0) | V (BR)CBO | -60 | - | Vdc |
| Emitter-Base Breakdown Voltage (I E = -10 m Adc, I C = 0) | Emitter-Base Breakdown Voltage (I E = -10 m Adc, I C = 0) | V (BR)EBO | -5.0 | - | Vdc |
| Collector Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | Collector Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | I CEX | - | -50 | nAdc |
| Collector Cutoff Current (V CB = -50 Vdc, I E = 0) (V CB = -50 Vdc, I E = 0, T A = 125 ° C) | Collector Cutoff Current (V CB = -50 Vdc, I E = 0) (V CB = -50 Vdc, I E = 0, T A = 125 ° C) | I CBO | - - | -0.010 -10 | m Adc |
| Base Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | Base Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | I BL | - | -50 | nAdc |
| ON CHARACTERISTICS | |||||
| DC Current Gain (I C = -0.1 mAdc, V CE = -10 Vdc) (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10 Vdc) (I C = -150 mAdc, V CE = -10 Vdc) (I C = -500 mAdc, V CE = -10 Vdc) (Note 5) | DC Current Gain (I C = -0.1 mAdc, V CE = -10 Vdc) (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10 Vdc) (I C = -150 mAdc, V CE = -10 Vdc) (I C = -500 mAdc, V CE = -10 Vdc) (Note 5) | h FE | 75 100 100 100 50 | - - - 300 - | - |
| Collector-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (Note 5) (I C = -500 mAdc, I B = -50 mAdc) | Collector-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (Note 5) (I C = -500 mAdc, I B = -50 mAdc) | V CE(sat) | - - | -0.4 -1.6 | Vdc |
| Base-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) | Base-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) | V BE(sat) | - - | -1.3 -2.6 | Vdc |
| SMALL-SIGNAL CHARACTERISTICS | |||||
| Current-Gain - Bandwidth Product (Notes 5, 6), (I C = -50 mAdc, V CE = -20 Vdc, f = 100 MHz) | Current-Gain - Bandwidth Product (Notes 5, 6), (I C = -50 mAdc, V CE = -20 Vdc, f = 100 MHz) | f T | 200 | - | MHz |
| Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) | Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) | C obo | - | 8.0 | pF |
| Input Capacitance (V EB = -2.0 Vdc, I C = 0, f = 1.0 MHz) | Input Capacitance (V EB = -2.0 Vdc, I C = 0, f = 1.0 MHz) | C ibo | - | 30 | |
| SWITCHING CHARACTERISTICS | SWITCHING CHARACTERISTICS | ||||
| Turn-On Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t on | - | 45 | ns |
| Delay Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t d | - | 10 | ns |
| Rise Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t r | - | 40 | ns |
| Turn-Off Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t off | - | 100 | ns |
| Storage Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t s | - | 80 | ns |
| Fall | Time | t f | - | 30 | ns |
- Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
- f T is defined as the frequency at which |h fe | extrapolates to unity.
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
MMBT2907ALT1G Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | V CEO | -60 | Vdc |
| Collector-Base Voltage | V CBO | -60 | Vdc |
| Emitter-Base Voltage | V EBO | -5.0 | Vdc |
| Collector Current - Continuous | I C | -600 | mAdc |
| Collector Current - Peak (Note 3) | I CM | -1200 | mAdc |
MMBT2907ALT1G Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Total Device Dissipation - FR-5 Board (Note 1) @T A = 25 ° C Derate above 25 ° C | P D | 225 1.8 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 556 | ° C/W |
| Total Device Dissipation - Alumina Substrate, (Note 2) @T A = 25 ° C Derate above 25 ° C | P D | 300 2.4 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 417 | ° C/W |
| Total Device Dissipation - Heat Spreader or equivalent, (Note 4) @T A = 25 ° C | P D | 350 | mW |
| Thermal Resistance, Junction-to-Ambient | R q JA | 357 | ° C/W |
| Junction and Storage Temperature | T J , T stg | -55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- FR-5 = 1.0 -0.75 -0.062 in.
- Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
- Reference SOA curve.
- Heat Spreader or equivalent = 450 mm 2 , 2 oz.
SOT-23 (TO-236AB) CASE 318 STYLE 6
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| MMBT2907A | onsemi | SOT-23 |
| MMBT2907ALT3G | onsemi | SOT-23 |
| SMMBT2907ALT1G | onsemi | TO-236-3, SC-59, SOT-23-3 |
| SMMBT2907ALT3G | onsemi | SOT-23 |
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