MMBT2907A
PNP Silicon General Purpose TransistorThe MMBT2907A is a pnp silicon general purpose transistor from onsemi. View the full MMBT2907A datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
onsemi
Category
PNP Silicon General Purpose Transistor
Key Specifications
| Parameter | Value |
|---|---|
| Collector - Emitter Voltage VCEO | 60V |
| Collector - Emitter Voltage VCEO | 60V |
| Current - Collector Cutoff | 10nA |
| Current - Collector Cutoff | 10nA |
| Current - Collector(Ic) | 600mA |
| Current - Collector(Ic) | 600mA |
| DC Current Gain | 75 |
| DC Current Gain | 75 |
| Emitter-Base Voltage VEBO | 5V |
| Emitter-Base Voltage VEBO | 5V |
| Number | 1 PNP |
| Number | 1 PNP |
| Operating Temperature | -55℃~+150℃ °C |
| Pd - Power Dissipation | 350mW |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | 200MHz |
| Transition frequency(fT) | 200MHz |
| type | PNP |
| type | PNP |
| Vce Saturation(VCE(sat)) | 1.6V |
| Vce Saturation(VCE(sat)) | 1.6V |
Overview
Part: MMBT2907ALT1G — onsemi
Type: PNP Silicon General Purpose Transistor
Description: PNP silicon general purpose transistor with -60 V collector-emitter voltage, -600 mA continuous collector current, and a current-gain bandwidth product of 200 MHz.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Collector-Emitter Breakdown Voltage: -60 Vdc (I_C = -1.0 mAdc, I_B = 0)
- Continuous Collector Current: -600 mAdc
Absolute Maximum Ratings:
- Max Collector-Emitter Voltage: -60 Vdc
- Max Collector-Base Voltage: -60 Vdc
- Max Emitter-Base Voltage: -5 Vdc
- Max continuous collector current: -600 mAdc
- Max junction and storage temperature: +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): -60 Vdc (I_C = -1.0 mAdc, I_B = 0)
- DC Current Gain (h_FE): 100 min (I_C = -150 mAdc, V_CE = -10 Vdc)
- Collector-Emitter Saturation Voltage (V_CE(sat)): -0.4 Vdc max (I_C = -150 mAdc, I_B = -15 mAdc)
- Base-Emitter Saturation Voltage (V_BE(sat)): -1.3 Vdc max (I_C = -150 mAdc, I_B = -15 mAdc)
- Current-Gain - Bandwidth Product (f_T): 200 MHz min (I_C = -50 mAdc, V_CE = -20 Vdc, f = 100 MHz)
- Output Capacitance (C_obo): 8.0 pF max (V_CB = -10 Vdc, I_E = 0, f = 1.0 MHz)
- Turn-On Time (t_on): 45 ns max (V_CC = -30 Vdc, I_C = -150 mAdc, I_B1 = -15 mAdc)
- Turn-Off Time (t_off): 100 ns max
Features:
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Package:
- SOT-23 (TO-236AB)
Features
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Electrical Characteristics
| Characteristic | Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||
| Collector-Emitter Breakdown Voltage (Note 5) (I C = -1.0 mAdc, I B = 0) (I C = -10 mAdc, I B = 0) | Collector-Emitter Breakdown Voltage (Note 5) (I C = -1.0 mAdc, I B = 0) (I C = -10 mAdc, I B = 0) | V (BR)CEO | -60 -60 | - - | Vdc |
| Collector-Base Breakdown Voltage (I C = -10 m Adc, I E = 0) | Collector-Base Breakdown Voltage (I C = -10 m Adc, I E = 0) | V (BR)CBO | -60 | - | Vdc |
| Emitter-Base Breakdown Voltage (I E = -10 m Adc, I C = 0) | Emitter-Base Breakdown Voltage (I E = -10 m Adc, I C = 0) | V (BR)EBO | -5.0 | - | Vdc |
| Collector Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | Collector Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | I CEX | - | -50 | nAdc |
| Collector Cutoff Current (V CB = -50 Vdc, I E = 0) (V CB = -50 Vdc, I E = 0, T A = 125 ° C) | Collector Cutoff Current (V CB = -50 Vdc, I E = 0) (V CB = -50 Vdc, I E = 0, T A = 125 ° C) | I CBO | - - | -0.010 -10 | m Adc |
| Base Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | Base Cutoff Current (V CE = -30 Vdc, V EB(off) = -0.5 Vdc) | I BL | - | -50 | nAdc |
| ON CHARACTERISTICS | |||||
| DC Current Gain (I C = -0.1 mAdc, V CE = -10 Vdc) (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10 Vdc) (I C = -150 mAdc, V CE = -10 Vdc) (I C = -500 mAdc, V CE = -10 Vdc) (Note 5) | DC Current Gain (I C = -0.1 mAdc, V CE = -10 Vdc) (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10 Vdc) (I C = -150 mAdc, V CE = -10 Vdc) (I C = -500 mAdc, V CE = -10 Vdc) (Note 5) | h FE | 75 100 100 100 50 | - - - 300 - | - |
| Collector-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (Note 5) (I C = -500 mAdc, I B = -50 mAdc) | Collector-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (Note 5) (I C = -500 mAdc, I B = -50 mAdc) | V CE(sat) | - - | -0.4 -1.6 | Vdc |
| Base-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) | Base-Emitter Saturation Voltage (Note 5) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) | V BE(sat) | - - | -1.3 -2.6 | Vdc |
| SMALL-SIGNAL CHARACTERISTICS | |||||
| Current-Gain - Bandwidth Product (Notes 5, 6), (I C = -50 mAdc, V CE = -20 Vdc, f = 100 MHz) | Current-Gain - Bandwidth Product (Notes 5, 6), (I C = -50 mAdc, V CE = -20 Vdc, f = 100 MHz) | f T | 200 | - | MHz |
| Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) | Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) | C obo | - | 8.0 | pF |
| Input Capacitance (V EB = -2.0 Vdc, I C = 0, f = 1.0 MHz) | Input Capacitance (V EB = -2.0 Vdc, I C = 0, f = 1.0 MHz) | C ibo | - | 30 | |
| SWITCHING CHARACTERISTICS | SWITCHING CHARACTERISTICS | ||||
| Turn-On Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t on | - | 45 | ns |
| Delay Time | (V CC = -30 Vdc, I C = -150 mAdc, I B1 = -15 mAdc) | t d | - | 10 | ns |
| Rise Time | t r | - | 40 | ns | |
| Turn-Off Time | t off | - | 100 | ns | |
| Storage | Time | t s | - | 80 | ns |
| Fall | Time | t f | - | 30 | ns |
- Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
- f T is defined as the frequency at which |h fe | extrapolates to unity.
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
Absolute Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | V CEO | -60 | Vdc |
| Collector-Base Voltage | V CBO | -60 | Vdc |
| Emitter-Base Voltage | V EBO | -5 | Vdc |
| Collector Current - Continuous | I C | -600 | mAdc |
| Collector Current - Peak (Note 3) | I CM | -1200 | mAdc |
Thermal Information
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Total Device Dissipation - FR-5 Board (Note 1) @T A = 25 ° C Derate above 25 ° C | P D | 225 1.8 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 556 | ° C/W |
| Total Device Dissipation - Alumina Substrate, (Note 2) @T A = 25 ° C Derate above 25 ° C | P D | 300 2.4 | mW mW/ ° C |
| Thermal Resistance, Junction-to-Ambient | R q JA | 417 | ° C/W |
| Total Device Dissipation - Heat Spreader or equivalent, (Note 4) @T A = 25 ° C | P D | 350 | mW |
| Thermal Resistance, Junction-to-Ambient | R q JA | 357 | ° C/W |
| Junction and Storage Temperature | T J , T stg | -55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- FR-5 = 1.0 -0.75 -0.062 in.
- Alumina = 0.4 -0.3 -0.024 in. 99.5% alumina.
- Reference SOA curve.
- Heat Spreader or equivalent = 450 mm 2 , 2 oz.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| MMBT2907ALT1G | onsemi | SOT-23 |
| MMBT2907ALT3G | onsemi | — |
| SMMBT2907ALT1G | onsemi | — |
| SMMBT2907ALT3G | onsemi | — |
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