Part: MIC4604 — Microchip Technology (formerly Micrel)

Type: Half-Bridge MOSFET Driver

Description: The MIC4604 is an 85V half-bridge MOSFET driver featuring fast 39 ns propagation delays, 20 ns driver rise/fall times for a 1 nF load, and a 5.5V to 16V programmable gate drive supply voltage range.

Operating Conditions:

• Supply voltage: 5.25V to 16V
• Operating temperature: -40 to +125 °C
• Voltage on HS: -0.3V to +85V

Absolute Maximum Ratings:

• Max supply voltage: 18V
• Max continuous current: 100 mA (in VDD to HB Diode)
• Max junction/storage temperature: +150 °C

Key Specs:

• VDD Quiescent Current (LI = HI = 0V): 48 μA (typ), 200 μA (max)
• VDD Operating Current (f = 20 kHz): 136 μA (typ), 300 μA (max)
• Low-Level Input Voltage (VIL): 0.8 V (max)
• High-Level Input Voltage (VIH): 2.2 V (min)
• LO/HO Peak Sink Current: 1 A (typ) / 1.5 A (typ)
• LO/HO Peak Source Current: 1 A (typ)
• Lower Turn-On Propagation Delay (tLPLH): 39 ns (typ), 75 ns (max)
• Upper Turn-On Propagation Delay (tHPLH): 33 ns (typ), 75 ns (max)
• Output Rise/Fall Time (CL = 1000 pF): 20 ns (typ)

Features:

• AEC-Q100 Automotive Qualified (SOIC package only)
• Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
• TTL Input Thresholds
• On-Chip Bootstrap Diode
• Low Power Consumption
• Undervoltage Protection

Applications:

• Power Inverters
• High Voltage Step-Down Regulators
• Half, Full, and 3-Phase Bridge Motor Drives
• Distributed Power Systems
• Computing Peripherals

Package:

• 8-pin SOIC
• 10-pin 2.5 mm x 2.5 mm UDFN

• AEC-Q100 Automotive Qualified, See Product Identification System (SOIC package only)
• 5.5V to 16V Gate Drive Supply Voltage Range
• Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
• TTL Input Thresholds
• On-Chip Bootstrap Diode
• Fast 39 ns Propagation Times
• Drives 1000 pF Load with 20 ns Rise and Fall Times
• Low Power Consumption
• Supplies Undervoltage Protection
• -40°C to +125°C Junction Temperature Range

• Power Inverters
• High Voltage Step-Down Regulators
• Half, Full, and 3-Phase Bridge Motor Drives
• Distributed Power Systems
• Computing Peripherals

MIC4604YMT-TR Pinout

Package: SOIC-8

Notes:

• The datasheet table provided separate pin numbering for UDFN and SOIC packages. Pin numbers above are for SOIC-8 variant (MIC4604YMT-TR).
• UDFN variant includes NC pins (2, 10) and an exposed pad (ePAD) not present in SOIC-8.
• Type abbreviations: P = Power, I = Input, O = Output, S = Signal/Reference.

Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1

Note

1: Specifications are for packaged product only.

2: Guaranteed by design. Not production tested.

• 3: Minimum Input Pulse Width shorter than 200 ns should be avoided to prevent unpredicted behavior.

• Input Voltages (V LI , V HI , V EN ) ............................................................................................................-0.3V to V DD + 0.3V

• Voltage on LO (V LO )...........................................................................................................................-0.3V to V DD + 0.3V

• Voltage on HO (V HO ).................................................................................................................V HS - 0.3V to V HB + 0.3V

• Voltage on HS (Continuous) ....................................................................................................................... -0.3V to +90V

• Voltage on HB.........................................................................................................................................................+108V

• Average Current in V DD to HB Diode....................................................................................................................100 mA ESD Rating (Note 1) ...................................................................................................................HBM: 1.5 kV; MM: 200V

• Operating Ratings ‡

• Supply Voltage (V DD ) [Decreasing V DD ] .................................................................................................. +5.25V to +16V

• Supply Voltage (V DD ) [Increasing V DD ] ...................................................................................................... +5.5V to +16V

• Voltage on HS............................................................................................................................................. -0.3V to +85V

• Voltage on HS (Repetitive Transient).......................................................................................................... -0.7V to +90V

• HS Slew Rate........................................................................................................................................................50 V/ns

• Voltage on HB........................................................................................................................... V HS + 4.5V to V HS + 16V and/or.......................................................................................................................................V DD - 1V to V DD + 85V

• † Notice: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other con -ditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Specifications are for pack -aged product only.

• ‡ Notice: The device is not guaranteed to function outside its operating ratings.

Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF.

TABLE 1-1: ELECTRICAL CHARACTERISTICS

Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1

Total power dissipation in the MIC4604 is equal to the power dissipation caused by driving the external MOSFETs, the supply current and the internal bootstrap diode.

Microchip Technology Drawing C04-03161-HNA Rev B

NOTES: