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MIC4604YM-TRVAO

Half-Bridge MOSFET Driver

The MIC4604YM-TRVAO is a half-bridge mosfet driver from Microchip Technology. View the full MIC4604YM-TRVAO datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Microchip Technology

Category

Half-Bridge MOSFET Driver

Overview

Part: MIC4604 — Microchip Technology (formerly Micrel)

Type: Half-Bridge MOSFET Driver

Description: The MIC4604 is an 85V half-bridge MOSFET driver featuring fast 39 ns propagation delays, 20 ns driver rise/fall times for a 1 nF load, and a 5.5V to 16V programmable gate drive supply voltage range.

Operating Conditions:

  • Supply voltage: 5.25V to 16V
  • Operating temperature: -40 to +125 °C
  • Voltage on HS: -0.3V to +85V

Absolute Maximum Ratings:

  • Max supply voltage: 18V
  • Max continuous current: 100 mA (in VDD to HB Diode)
  • Max junction/storage temperature: +150 °C

Key Specs:

  • VDD Quiescent Current (LI = HI = 0V): 48 μA (typ), 200 μA (max)
  • VDD Operating Current (f = 20 kHz): 136 μA (typ), 300 μA (max)
  • Low-Level Input Voltage (VIL): 0.8 V (max)
  • High-Level Input Voltage (VIH): 2.2 V (min)
  • LO/HO Peak Sink Current: 1 A (typ) / 1.5 A (typ)
  • LO/HO Peak Source Current: 1 A (typ)
  • Lower Turn-On Propagation Delay (tLPLH): 39 ns (typ), 75 ns (max)
  • Upper Turn-On Propagation Delay (tHPLH): 33 ns (typ), 75 ns (max)
  • Output Rise/Fall Time (CL = 1000 pF): 20 ns (typ)

Features:

  • AEC-Q100 Automotive Qualified (SOIC package only)
  • Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
  • TTL Input Thresholds
  • On-Chip Bootstrap Diode
  • Low Power Consumption
  • Undervoltage Protection

Applications:

  • Power Inverters
  • High Voltage Step-Down Regulators
  • Half, Full, and 3-Phase Bridge Motor Drives
  • Distributed Power Systems
  • Computing Peripherals

Package:

  • 8-pin SOIC
  • 10-pin 2.5 mm x 2.5 mm UDFN

Features

  • AEC-Q100 Automotive Qualified, See Product Identification System (SOIC package only)
  • 5.5V to 16V Gate Drive Supply Voltage Range
  • Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
  • TTL Input Thresholds
  • On-Chip Bootstrap Diode
  • Fast 39 ns Propagation Times
  • Drives 1000 pF Load with 20 ns Rise and Fall Times
  • Low Power Consumption
  • Supplies Undervoltage Protection
  • -40°C to +125°C Junction Temperature Range

Applications

  • Power Inverters
  • High Voltage Step-Down Regulators
  • Half, Full, and 3-Phase Bridge Motor Drives
  • Distributed Power Systems
  • Computing Peripherals

Pin Configuration

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

Pin Number UDFNPin Number SOICPin NameDescription
11VDDInput supply for gate drivers. Decouple this pin to V SS with a >2.2 μF capacitor. Anode connection to internal bootstrap diode.
2, 10-NCNo connect.
32HBHigh-side bootstrap supply. External bootstrap capacitor is required. Connect bootstrap capacitor across this pin and HS. Cathode connection to internal bootstrap diode.
43HOHigh-side drive output. Connect to gate of the external high-side power MOSFET.
54HSHigh-side drive reference connection. Connect to source of the external high-side power MOSFET. Connect this pin to the bootstrap capacitor.
65HIHigh-side drive input.
76LILow-side drive input.
87VSSDriver reference supply input. Connected to power ground of external circuitry and to source of low-side power MOSFET.
98LOLow-side drive output. Connect to gate of the external low-side power MOSFET.
EP-ePADExposed pad. Connect to V SS .

Electrical Characteristics

Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1

ParameterSymbolMin.Typ.Max.UnitsConditions
Output Rise/Fall Timet RC/FC-20-nsC L = 1000 pF
Output Rise/Fall Time (3V to 9V)t R/F-0.8-μsC L = 0.1 μF
Minimum Input Pulse Width that Changes the Outputt PW-50-nsNote 3
Bootstrap Diode Turn-On or Turn-Off Timet BS-10-ns-

Note

1: Specifications are for packaged product only.

2: Guaranteed by design. Not production tested.

  • 3: Minimum Input Pulse Width shorter than 200 ns should be avoided to prevent unpredicted behavior.

Absolute Maximum Ratings

  • Input Voltages (V LI , V HI , V EN ) ............................................................................................................-0.3V to V DD + 0.3V

  • Voltage on LO (V LO )...........................................................................................................................-0.3V to V DD + 0.3V

  • Voltage on HO (V HO ).................................................................................................................V HS - 0.3V to V HB + 0.3V

  • Voltage on HS (Continuous) ....................................................................................................................... -0.3V to +90V

  • Voltage on HB.........................................................................................................................................................+108V

  • Average Current in V DD to HB Diode....................................................................................................................100 mA ESD Rating (Note 1) ...................................................................................................................HBM: 1.5 kV; MM: 200V

  • Operating Ratings ‡

  • Supply Voltage (V DD ) [Decreasing V DD ] .................................................................................................. +5.25V to +16V

  • Supply Voltage (V DD ) [Increasing V DD ] ...................................................................................................... +5.5V to +16V

  • Voltage on HS............................................................................................................................................. -0.3V to +85V

  • Voltage on HS (Repetitive Transient).......................................................................................................... -0.7V to +90V

  • HS Slew Rate........................................................................................................................................................50 V/ns

  • Voltage on HB........................................................................................................................... V HS + 4.5V to V HS + 16V and/or.......................................................................................................................................V DD - 1V to V DD + 85V

  • † Notice: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other con -ditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Specifications are for pack -aged product only.

  • ‡ Notice: The device is not guaranteed to function outside its operating ratings.

Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF.

TABLE 1-1: ELECTRICAL CHARACTERISTICS

Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1

ParameterSymbolMin.Typ.Max.UnitsConditions
Supply Current
V DD Quiescent CurrentI DD-48200μALI = HI = 0V
V DD Operating CurrentI DDO-136300μAf = 20 kHz
Total HB Quiescent CurrentI HB-2075μALI = HI = 0V or LI = 0V and HI = 5V
Total HB Operating CurrentI HBO-29200μAf = 20 kHz
HB to V SS Quiescent CurrentI HBS-0.55μAV HS = V HB = 90V
Input (LI, HI)
Low-Level Input VoltageV IL--0.8V-
High-Level Input VoltageV IH2.2--V-
Input Voltage HysteresisV HYS-0.05-V-
Input Pull-Down ResistanceR I100240500-
Undervoltage Protection
V DD Falling ThresholdV DDF4.04.44.9V-
V DD Threshold HysteresisV DDH-0.21-VRising V DD Threshold; V DDR = V DDF + V DDH
HB Falling ThresholdV HBF4.04.44.9V-
HB Threshold HysteresisV HBH-0.23-VRisingV HB Threshold; V HBR =V HBF + V HBH
Bootstrap Diode
Low-Current Forward VoltageV DL-0.420.70VI VDD-HB = 100 μA
High-Current Forward VoltageV DH-0.751.0VI VDD-HB = 50 mA
Dynamic ResistanceR D-2.85.0ΩI VDD-HB = 50 mA
LO Gate Driver
Low-Level Output VoltageV OLL-0.170.4VI LO = 50 mA
High-Level Output VoltageV OHL-0.251.0VI LO = -50 mA, V OHL = V DD - V LO
Peak Sink CurrentI OHL-1-AV LO = 5V
Peak Source CurrentI OLL-1-AV LO = 5V
HO Gate Driver
Low-Level Output VoltageV OLH-0.20.6VI HO = 50 mA
High-Level Output VoltageV OHH-0.221.0VI HO = -50 mA, V OHH = V HB - V HO
Peak Sink CurrentI OHH-1.5-AV HO = 5V
Peak Source CurrentI OLH-1-AV HO = 5V
Switching Specifications (Note 2)Switching Specifications (Note 2)
Lower Turn-Off Propagation Delay (LI Falling to LO Falling)t LPHL-3775ns-
Upper Turn-Off Propagation Delay (HI Falling to HO Falling)t HPHL-3475ns-
Lower Turn-On Propagation Delay (LI Rising to LO Rising)t LPLH-3975ns-
Upper Turn-On Propagation Delay (HI Rising to HO Rising)t HPLH-3375ns-

Thermal Information

Total power dissipation in the MIC4604 is equal to the power dissipation caused by driving the external MOSFETs, the supply current and the internal bootstrap diode.

Typical Application

Package Information

UnitsMILLIMETERSMILLIMETERSMILLIMETERS
Dimension LimitsDimension LimitsMINNOMMAX
Contact PitchE0.50 BSC
Center Pad WidthX21.50
Center Pad LengthY22.10
Contact Pad SpacingC12.60
Contact Pad Width (Xnn)X10.30
Contact Pad Length (Xnn)Y10.65
Contact Pad to Center Pad (X10)G10.23
Contact Pad to Contact Pad (X8)G20.20
Thermal Via DiameterV0.33
Thermal Via PitchEV1.00

Microchip Technology Drawing C04-03161-HNA Rev B

NOTES:

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
MIC4604Microchip Technology
MIC4604SMicrochip Technology
MIC4604YM-TRMicrochip Technology
MIC4604YMT-TRMicrochip TechnologySOIC-8
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