MIC4604S
Half-Bridge MOSFET DriverThe MIC4604S is a half-bridge mosfet driver from Microchip Technology. View the full MIC4604S datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Microchip Technology
Category
Half-Bridge MOSFET Driver
Overview
Part: MIC4604 — Microchip Technology (formerly Micrel)
Type: Half-Bridge MOSFET Driver
Description: The MIC4604 is an 85V half-bridge MOSFET driver featuring fast 39 ns propagation delays, 20 ns driver rise/fall times for a 1 nF load, and a 5.5V to 16V programmable gate drive supply voltage range.
Operating Conditions:
- Supply voltage: 5.25V to 16V
- Operating temperature: -40 to +125 °C
- Voltage on HS: -0.3V to +85V
Absolute Maximum Ratings:
- Max supply voltage: 18V
- Max continuous current: 100 mA (in VDD to HB Diode)
- Max junction/storage temperature: +150 °C
Key Specs:
- VDD Quiescent Current (LI = HI = 0V): 48 μA (typ), 200 μA (max)
- VDD Operating Current (f = 20 kHz): 136 μA (typ), 300 μA (max)
- Low-Level Input Voltage (VIL): 0.8 V (max)
- High-Level Input Voltage (VIH): 2.2 V (min)
- LO/HO Peak Sink Current: 1 A (typ) / 1.5 A (typ)
- LO/HO Peak Source Current: 1 A (typ)
- Lower Turn-On Propagation Delay (tLPLH): 39 ns (typ), 75 ns (max)
- Upper Turn-On Propagation Delay (tHPLH): 33 ns (typ), 75 ns (max)
- Output Rise/Fall Time (CL = 1000 pF): 20 ns (typ)
Features:
- AEC-Q100 Automotive Qualified (SOIC package only)
- Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
- TTL Input Thresholds
- On-Chip Bootstrap Diode
- Low Power Consumption
- Undervoltage Protection
Applications:
- Power Inverters
- High Voltage Step-Down Regulators
- Half, Full, and 3-Phase Bridge Motor Drives
- Distributed Power Systems
- Computing Peripherals
Package:
- 8-pin SOIC
- 10-pin 2.5 mm x 2.5 mm UDFN
Features
- AEC-Q100 Automotive Qualified, See Product Identification System (SOIC package only)
- 5.5V to 16V Gate Drive Supply Voltage Range
- Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
- TTL Input Thresholds
- On-Chip Bootstrap Diode
- Fast 39 ns Propagation Times
- Drives 1000 pF Load with 20 ns Rise and Fall Times
- Low Power Consumption
- Supplies Undervoltage Protection
- -40°C to +125°C Junction Temperature Range
Applications
- Power Inverters
- High Voltage Step-Down Regulators
- Half, Full, and 3-Phase Bridge Motor Drives
- Distributed Power Systems
- Computing Peripherals
Pin Configuration
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
| Pin Number UDFN | Pin Number SOIC | Pin Name | Description |
|---|---|---|---|
| 1 | 1 | VDD | Input supply for gate drivers. Decouple this pin to V SS with a >2.2 μF capacitor. Anode connection to internal bootstrap diode. |
| 2, 10 | - | NC | No connect. |
| 3 | 2 | HB | High-side bootstrap supply. External bootstrap capacitor is required. Connect bootstrap capacitor across this pin and HS. Cathode connection to internal bootstrap diode. |
| 4 | 3 | HO | High-side drive output. Connect to gate of the external high-side power MOSFET. |
| 5 | 4 | HS | High-side drive reference connection. Connect to source of the external high-side power MOSFET. Connect this pin to the bootstrap capacitor. |
| 6 | 5 | HI | High-side drive input. |
| 7 | 6 | LI | Low-side drive input. |
| 8 | 7 | VSS | Driver reference supply input. Connected to power ground of external circuitry and to source of low-side power MOSFET. |
| 9 | 8 | LO | Low-side drive output. Connect to gate of the external low-side power MOSFET. |
| EP | - | ePAD | Exposed pad. Connect to V SS . |
Electrical Characteristics
Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1
| Parameter | Symbol | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|---|
| Output Rise/Fall Time | t RC/FC | - | 20 | - | ns | C L = 1000 pF |
| Output Rise/Fall Time (3V to 9V) | t R/F | - | 0.8 | - | μs | C L = 0.1 μF |
| Minimum Input Pulse Width that Changes the Output | t PW | - | 50 | - | ns | Note 3 |
| Bootstrap Diode Turn-On or Turn-Off Time | t BS | - | 10 | - | ns | - |
Note
1: Specifications are for packaged product only.
2: Guaranteed by design. Not production tested.
- 3: Minimum Input Pulse Width shorter than 200 ns should be avoided to prevent unpredicted behavior.
Absolute Maximum Ratings
-
Input Voltages (V LI , V HI , V EN ) ............................................................................................................-0.3V to V DD + 0.3V
-
Voltage on LO (V LO )...........................................................................................................................-0.3V to V DD + 0.3V
-
Voltage on HO (V HO ).................................................................................................................V HS - 0.3V to V HB + 0.3V
-
Voltage on HS (Continuous) ....................................................................................................................... -0.3V to +90V
-
Voltage on HB.........................................................................................................................................................+108V
-
Average Current in V DD to HB Diode....................................................................................................................100 mA ESD Rating (Note 1) ...................................................................................................................HBM: 1.5 kV; MM: 200V
-
Operating Ratings ‡
-
Supply Voltage (V DD ) [Decreasing V DD ] .................................................................................................. +5.25V to +16V
-
Supply Voltage (V DD ) [Increasing V DD ] ...................................................................................................... +5.5V to +16V
-
Voltage on HS............................................................................................................................................. -0.3V to +85V
-
Voltage on HS (Repetitive Transient).......................................................................................................... -0.7V to +90V
-
HS Slew Rate........................................................................................................................................................50 V/ns
-
Voltage on HB........................................................................................................................... V HS + 4.5V to V HS + 16V and/or.......................................................................................................................................V DD - 1V to V DD + 85V
-
† Notice: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other con -ditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Specifications are for pack -aged product only.
-
‡ Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF.
TABLE 1-1: ELECTRICAL CHARACTERISTICS
Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1
| Parameter | Symbol | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|---|
| Supply Current | ||||||
| V DD Quiescent Current | I DD | - | 48 | 200 | μA | LI = HI = 0V |
| V DD Operating Current | I DDO | - | 136 | 300 | μA | f = 20 kHz |
| Total HB Quiescent Current | I HB | - | 20 | 75 | μA | LI = HI = 0V or LI = 0V and HI = 5V |
| Total HB Operating Current | I HBO | - | 29 | 200 | μA | f = 20 kHz |
| HB to V SS Quiescent Current | I HBS | - | 0.5 | 5 | μA | V HS = V HB = 90V |
| Input (LI, HI) | ||||||
| Low-Level Input Voltage | V IL | - | - | 0.8 | V | - |
| High-Level Input Voltage | V IH | 2.2 | - | - | V | - |
| Input Voltage Hysteresis | V HYS | - | 0.05 | - | V | - |
| Input Pull-Down Resistance | R I | 100 | 240 | 500 | kΩ | - |
| Undervoltage Protection | ||||||
| V DD Falling Threshold | V DDF | 4.0 | 4.4 | 4.9 | V | - |
| V DD Threshold Hysteresis | V DDH | - | 0.21 | - | V | Rising V DD Threshold; V DDR = V DDF + V DDH |
| HB Falling Threshold | V HBF | 4.0 | 4.4 | 4.9 | V | - |
| HB Threshold Hysteresis | V HBH | - | 0.23 | - | V | RisingV HB Threshold; V HBR =V HBF + V HBH |
| Bootstrap Diode | ||||||
| Low-Current Forward Voltage | V DL | - | 0.42 | 0.70 | V | I VDD-HB = 100 μA |
| High-Current Forward Voltage | V DH | - | 0.75 | 1.0 | V | I VDD-HB = 50 mA |
| Dynamic Resistance | R D | - | 2.8 | 5.0 | Ω | I VDD-HB = 50 mA |
| LO Gate Driver | ||||||
| Low-Level Output Voltage | V OLL | - | 0.17 | 0.4 | V | I LO = 50 mA |
| High-Level Output Voltage | V OHL | - | 0.25 | 1.0 | V | I LO = -50 mA, V OHL = V DD - V LO |
| Peak Sink Current | I OHL | - | 1 | - | A | V LO = 5V |
| Peak Source Current | I OLL | - | 1 | - | A | V LO = 5V |
| HO Gate Driver | ||||||
| Low-Level Output Voltage | V OLH | - | 0.2 | 0.6 | V | I HO = 50 mA |
| High-Level Output Voltage | V OHH | - | 0.22 | 1.0 | V | I HO = -50 mA, V OHH = V HB - V HO |
| Peak Sink Current | I OHH | - | 1.5 | - | A | V HO = 5V |
| Peak Source Current | I OLH | - | 1 | - | A | V HO = 5V |
| Switching Specifications (Note 2) | Switching Specifications (Note 2) | |||||
| Lower Turn-Off Propagation Delay (LI Falling to LO Falling) | t LPHL | - | 37 | 75 | ns | - |
| Upper Turn-Off Propagation Delay (HI Falling to HO Falling) | t HPHL | - | 34 | 75 | ns | - |
| Lower Turn-On Propagation Delay (LI Rising to LO Rising) | t LPLH | - | 39 | 75 | ns | - |
| Upper Turn-On Propagation Delay (HI Rising to HO Rising) | t HPLH | - | 33 | 75 | ns | - |
Thermal Information
Total power dissipation in the MIC4604 is equal to the power dissipation caused by driving the external MOSFETs, the supply current and the internal bootstrap diode.
Typical Application
Package Information
| Units | MILLIMETERS | MILLIMETERS | MILLIMETERS | |
|---|---|---|---|---|
| Dimension Limits | Dimension Limits | MIN | NOM | MAX |
| Contact Pitch | E | 0.50 BSC | ||
| Center Pad Width | X2 | 1.50 | ||
| Center Pad Length | Y2 | 2.10 | ||
| Contact Pad Spacing | C1 | 2.60 | ||
| Contact Pad Width (Xnn) | X1 | 0.30 | ||
| Contact Pad Length (Xnn) | Y1 | 0.65 | ||
| Contact Pad to Center Pad (X10) | G1 | 0.23 | ||
| Contact Pad to Contact Pad (X8) | G2 | 0.20 | ||
| Thermal Via Diameter | V | 0.33 | ||
| Thermal Via Pitch | EV | 1.00 |
Microchip Technology Drawing C04-03161-HNA Rev B
NOTES:
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| MIC4604 | Microchip Technology | — |
| MIC4604YM-TR | Microchip Technology | — |
| MIC4604YM-TRVAO | Microchip Technology | — |
| MIC4604YMT-TR | Microchip Technology | SOIC-8 |
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