MIC4604S

Part: MIC4604 (MIC4604YMT-TR) — Microchip Technology (MIC4604 85V half-bridge MOSFET driver)

Type: Half-Bridge MOSFET Driver

Description: 85 V half-bridge N-channel MOSFET driver with 5.5–16 V programmable gate drive, 1–1.5 A peak drive, 39 ns typical propagation delay, 20 ns rise/fall into 1000 pF, and an on-chip bootstrap diode.

Operating Conditions:

• Supply voltage (VDD): 5.5–16 V (increasing VDD); 5.25–16 V (decreasing VDD)
• Junction operating temperature: -40 to +125 °C
• Voltage on HS: -0.3 to +85 V (repetitive transient -0.7 to +90 V); HS slew rate 50 V/ns
• Voltage on HB: VHS + 4.5 V to VHS + 16 V

Absolute Maximum Ratings:

• Supply voltage (VDD, VHB - VHS): -0.3 to +18 V
• Voltage on HS (continuous): -0.3 to +90 V
• Voltage on HB: +108 V
• Input voltages (LI, HI, EN): -0.3 V to VDD + 0.3 V
• Average current in VDD to HB diode: 100 mA
• ESD: HBM 1.5 kV; MM 200 V
• Storage temperature: -60 to +150 °C

Key Specs:

• VDD quiescent current: 48 μA typ, 200 μA max (LI = HI = 0 V)
• VDD operating current: 136 μA typ, 300 μA max (f = 20 kHz)
• Input thresholds: VIL 0.8 V max, VIH 2.2 V min (TTL)
• UVLO falling threshold: VDD 4.0/4.4/4.9 V (min/typ/max); VHB 4.0/4.4/4.9 V
• Peak output current: LO 1 A sink / 1 A source; HO 1.5 A sink / 1 A source (V = 5 V)
• Output low/high drop (50 mA): LO 0.17 V typ / 0.25 V typ; HO 0.2 V typ / 0.22 V typ
• Propagation delay: 33–39 ns typ, 75 ns max
• Output rise/fall time: 20 ns typ (CL = 1000 pF); 0.8 μs typ (CL = 0.1 μF)
• Bootstrap diode: 0.75 V typ forward voltage at 50 mA; 2.8 Ω typ dynamic resistance
• Thermal resistance θJA: 145 °C/W (SOIC-8), 53 °C/W (UDFN-10)

Features:

• AEC-Q100 automotive qualified (SOIC package only)
• Independent high-side and low-side inputs with TTL thresholds
• On-chip bootstrap diode
• Undervoltage protection on both low-side and high-side drivers
• Robust level shifter, immune to supply glitches, HS ringing below ground and HS slewing
• Low power consumption

Applications:

• Power inverters
• High-voltage step-down regulators
• Half, full and 3-phase bridge motor drives
• Distributed power systems
• Computing peripherals

Package:

• 8-pin SOIC
• 10-pin UDFN, 2.5 mm x 2.5 mm

• AEC-Q100 Automotive Qualified, See Product Identification System (SOIC package only)
• 5.5V to 16V Gate Drive Supply Voltage Range
• Drives High-Side and Low-Side N-Channel MOSFETs with Independent Inputs
• TTL Input Thresholds
• On-Chip Bootstrap Diode
• Fast 39 ns Propagation Times
• Drives 1000 pF Load with 20 ns Rise and Fall Times
• Low Power Consumption
• Supplies Undervoltage Protection
• -40°C to +125°C Junction Temperature Range

• Power Inverters
• High Voltage Step-Down Regulators
• Half, Full, and 3-Phase Bridge Motor Drives
• Distributed Power Systems
• Computing Peripherals

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1

Note

1: Specifications are for packaged product only.

2: Guaranteed by design. Not production tested.

• 3: Minimum Input Pulse Width shorter than 200 ns should be avoided to prevent unpredicted behavior.

• † Notice: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other con -ditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Specifications are for pack -aged product only.
• ‡ Notice: The device is not guaranteed to function outside its operating ratings.

Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF.

TABLE 1-1: ELECTRICAL CHARACTERISTICS

Electrical Characteristics: V DD = V HB = 12V; V SS = V HS = 0V; No load on LO or HO; T A = +25°C; unless otherwise noted. Bold values indicate -40°C ≤ T J ≤ +125°C. Note 1

Total power dissipation in the MIC4604 is equal to the power dissipation caused by driving the external MOSFETs, the supply current and the internal bootstrap diode.

• Dimensioning and tolerancing per ASME Y14.5M
• BSC: Basic Dimension. Theoretically exact value shown without tolerances.
• For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during the reflow process. 2.

Microchip Technology Drawing C04-03161-HNA Rev B

NOTES: