LTC7060I

Part: LTC7060 — Analog Devices (formerly Linear Technology)

Type: 100V Half-Bridge Driver with Floating Grounds and Adjustable Dead-Time

Description: The LTC7060 drives two N-Channel MOSFETs in a half-bridge configuration with supply voltages up to 100V, featuring a unique symmetric floating gate driver architecture for high noise immunity, 0.8Ω pull-down and 1.5Ω pull-up drivers, adaptive shoot-through protection, and programmable dead-time.

Operating Conditions:

• Supply voltage: 6–14 V (VCC)
• Operating temperature: -40 to 125 °C (suffix-dependent — see Order Information for grade-specific ranges)
• Input supply operating range: up to 100 V

Absolute Maximum Ratings:

• Max supply voltage (VCC): 15 V
• Max top side driver voltage (BST): 115 V
• Max bottom side driver voltage (BGVCC): 115 V
• Max junction temperature: 150 °C

Key Specs:

• VCC Undervoltage Lockout Threshold (VCC Falling): 5.3 V (typ)
• VCC Overvoltage Lockout Threshold (VCC Rising): 14.6 V (typ)
• BG Driver Supply Voltage Range (BGVCC-BGRTN): 4–14 V
• TG Driver Supply Voltage Range (BST-SW): 4–14 V
• TG Turn-On Input Threshold (PWM Rising): 3.1 V (typ)
• BG Pull-Down Resistance: 0.8 Ω (typ, VBGVCC-BGRTN = 10V)
• TG Pull-Down Resistance: 0.8 Ω (typ, VBST-SW = 10V)
• BG/TG Low to TG/BG High Propagation Delay (Dead-Time, RDT = 0Ω): 32 ns (typ)

Features:

• Unique Symmetric Floating Gate Driver Architecture
• High Noise Immunity, Tolerates ±10V Ground Difference between Input and Output Grounds
• 100V Maximum Input Voltage Independent of IC Supply Voltage VCC
• 0.8Ω Pull-Down, 1.5Ω Pull-Up for Fast Turn-On/Off
• Adaptive Shoot-Through Protection
• Programmable Dead-Time
• Three-State PWM Input with Enable Pin
• VCC UVLO/OVLO and Floating Supplies UVLO
• Drives Dual N-Channel MOSFETs
• Open-Drain Fault Indicator
• AEC-Q100 Automotive Qualification in Progress

Applications:

• Automotive and Industrial Power Systems
• Telecommunication Power Systems
• Half-Bridge and Full-Bridge Converters

Package:

• 12-Lead Plastic MSSOP

• n Unique Symmetric Floating Gate Driver Architecture
• n High Noise Immunity,Tolerates ±10V Ground Difference between Input and Output Grounds
• n 100V Maximum Input Voltage Independent of IC Supply Voltage V CC
• n 6V to 14V V CC Operating Voltage
• n 4V to 14V Gate Driver Voltage
• n 0.8Ω Pull-Down, 1.5Ω Pull-Up for Fast Turn-On/Off
• n Adaptive Shoot-Through Protection
• n Programmable Dead-Time
• n Three-State PWM Input with Enable Pin
• n VCC UVLO/OVLO and Floating Supplies UVLO
• n Drives Dual N-Channel MOSFETs
• n Open-Drain Fault Indicator
• n Available in Thermally Enhanced 12-LEAD MSOP
• n AEC-Q100 Automotive Qualification in Progress

• n Automotive and Industrial Power Systems
• n Telecommunication Power Systems
• n Half-Bridge and Full-Bridge Converters

ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified operating temperature range, otherwise specifications are at T A = 25°C (Note 2). V CC = V BGVCC = V BST =10V, V BGRTN = V SW = 0V, unless otherwise noted.

The l denotes the specifications which apply over the specified operating temperature range, otherwise specifications are at T A = 25°C (Note 2). V CC = V BGVCC = V BST =10V, V BGRTN = V SW = 0V, unless otherwise noted.

Note 2: The LTC7060E is guaranteed to meet performance specifications from 0°C to 85°C junction temperature. Specifications over the -40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC7060I is guaranteed over the -40°C to 125°C operation junction temperature range. The LTC7060J is guaranteed over the -40°C to 150°C operation junction temperature range. The LTC7060H is guaranteed over the -40°C to 150°C operation junction temperature range. High junction temperature degrades operation lifetimes; operating lifetime is derated for junction temperatures greater than 125°C. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environment factors.

Note 3: T J is calculated from the ambient temperature T A and power dissipation PD according to the following formula

T J = T A + (P D · 51°C/W) for LFCSP package; T J = T A + (P D · 40°C/W) for MSOP package.

Note 4: The total current includes both the current from BGV CC /BST to BGRTN/SW and the current to SGND. Dynamic supply current is higher due to the gate charge being delivered at the switching frequency.

Note 5: Rise and fall times are measured using 10% and 90% levels.

W

M

P