LTC7060EMSE

Part: LTC7060JMSE#TRPBF — Analog Devices (Linear Technology)

Type: 100 V Half-Bridge Gate Driver with Floating Grounds and Adjustable Dead-Time

Description: 100 V half-bridge N-channel MOSFET driver with 6–14 V VCC, 0.8 Ω pull-down / 1.5 Ω pull-up drivers, three-state PWM input, adaptive shoot-through protection and programmable dead-time, in a 12-lead MSOP.

Operating Conditions:

• Supply voltage (VCC): 6–14 V
• Input supply (VIN): up to 100 V
• Gate driver supply (BST–SW and BGVCC–BGRTN): 4–14 V
• Operating junction temperature: -40 to 150 °C (J grade)

Absolute Maximum Ratings:

• VCC supply voltage: -0.3 to 15 V
• BST and BGVCC: -0.3 to 115 V
• SW, BGRTN: -10 to 100 V
• (BST–SW) and (BGVCC–BGRTN): -0.3 to 15 V
• EN, FLT: -0.3 to 15 V; DT, PWM: -0.3 to 6 V
• Operating junction temperature: -40 to 150 °C
• Storage temperature: -65 to 150 °C

Key Specs:

• VCC UVLO falling threshold: 5.0–5.6 V (5.3 V typ, 0.3 V hysteresis); VCC OVLO rising: 14.6 V typ (0.8 V hysteresis)
• VCC supply current: 0.4 mA typ (VEN = VPWM = 0 V, RDT = 100 kΩ)
• Gate driver resistance (10 V supply): pull-up 1.5 Ω typ, pull-down 0.8 Ω typ
• Propagation delay (PWM to TG/BG low): 17 ns typ
• Rise/fall time (CLOAD = 3.3 nF): 18 ns / 13 ns typ
• Dead-time: 32 ns (RDT = 0 Ω), 43 ns (24.9 kΩ), 62 ns (64.9 kΩ), 76 ns (100 kΩ), 250 ns (open), all typ
• EN rising threshold: 1.1–1.3 V (1.2 V typ)
• Driver supply UVLO (BST and BGVCC): 3.4 V typ falling, 0.3 V hysteresis
• FLT open-drain pull-down: 60 Ω typ

Features:

• Symmetric floating gate driver architecture
• Tolerates ±10 V ground difference between input and output grounds
• 100 V maximum input voltage independent of VCC
• Adaptive shoot-through protection and programmable dead-time
• Three-state PWM input with enable pin
• VCC UVLO/OVLO and floating supplies UVLO
• Open-drain fault indicator
• Thermally enhanced 12-lead MSOP
• AEC-Q100 automotive qualification in progress

Applications:

• Automotive and industrial power systems
• Telecommunication power systems
• Half-bridge and full-bridge converters

Package:

• 12-Lead Plastic MSSOP (MSOP, exposed pad)

• n Automotive and Industrial Power Systems
• n Telecommunication Power Systems
• n Half-Bridge and Full-Bridge Converters

ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified operating temperature range, otherwise specifications are at T A = 25°C (Note 2). V CC = V BGVCC = V BST =10V, V BGRTN = V SW = 0V, unless otherwise noted.

The l denotes the specifications which apply over the specified operating temperature range, otherwise specifications are at T A = 25°C (Note 2). V CC = V BGVCC = V BST =10V, V BGRTN = V SW = 0V, unless otherwise noted.

Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Ratings for extended periods may affect device reliability and lifetime.

Note 2: The LTC7060E is guaranteed to meet performance specifications from 0°C to 85°C junction temperature. Specifications over the -40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC7060I is guaranteed over the -40°C to 125°C operation junction temperature range. The LTC7060J is guaranteed over the -40°C to 150°C operation junction temperature range. The LTC7060H is guaranteed over the -40°C to 150°C operation junction temperature range. High junction temperature degrades operation lifetimes; operating lifetime is derated for junction temperatures greater than 125°C. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environment factors.

Note 3: T J is calculated from the ambient temperature T A and power dissipation PD according to the following formula

T J = T A + (P D · 51°C/W) for LFCSP package; T J = T A + (P D · 40°C/W) for MSOP package.

Note 4: The total current includes both the current from BGV CC /BST to BGRTN/SW and the current to SGND. Dynamic supply current is higher due to the gate charge being delivered at the switching frequency.

Note 5: Rise and fall times are measured using 10% and 90% levels.

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The LTC ® 7060 drives two N-Channel MOSFETs in a half-bridge configuration with supply voltages up to 100V. Both high-side and low-side drivers can drive the MOSFETs with a different ground reference, providing excellent noise and transient immunity.

Its powerful 0.8Ω pull-down and 1.5Ω pull-up MOSFET drivers allows the use of large gate capacitance high voltage MOSFETs. Additional features include UVLO, ThreeState PWM input, adjustable turn-on/-off delays and shoot-through protection.

See chart below for a similar driver in this product family.

All registered trademarks and trademarks are the property of their respective owners.

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