Overview

Part: LM5106 from Texas Instruments

Type: Half-Bridge Gate Driver

Key Specs:

Peak Output Sink Current: 1.8 A
Peak Output Source Current: 1.2 A
Bootstrap Supply Voltage Range: up to 118 V DC
Floating High-Side Driver Rail Voltage: up to 100 V
Fast Turnoff Propagation Delay: 32 ns (Typical)
Recommended VDD Operating Range: 8 V to 14 V
Recommended Junction Temperature Range: -40 °C to 125 °C

Features:

Drives Both a High-Side and Low-Side N-Channel
Single TTL Compatible Input
Programmable Turnon Delays (Dead-Time)
Enable Input Pin
Drives 1000 pF With 15-ns Rise and 10-ns Fall
Supply Rail Undervoltage Lockout
Low Power Consumption

Applications:

Solid-State Motor Drives
Half-Bridge and Full-Bridge Power Converters
Two Switch Forward Power Converters

Package:

WSON (10): 4 mm x 4 mm
VSSOP (10): 3.00 mm × 3.00 mm

Features

Drives Both a High-Side and Low-Side N-Channel
1.8-A Peak Output Sink Current
1.2-A Peak Output Source Current
Bootstrap Supply Voltage Range up to 118-V DC
Single TTL Compatible Input
Programmable Turnon Delays (Dead-Time)
Enable Input Pin
Fast Turnoff Propagation Delays (32 ns Typical)
Drives 1000 pF With 15-ns Rise and 10-ns Fall
Supply Rail Undervoltage Lockout
Low Power Consumption
10-Pin WSON Package (4 mm x 4 mm) and 10-Pin VSSOP Package

Applications

Solid-State Motor Drives
Half-Bridge and Full-Bridge Power Converters
Two Switch Forward Power Converters

Pin Configuration

Pin Functions

	PIN
NO.	NAME
1	VDD
2	HB
3	HO
4	HS High-side MOSFET source connection
5	NC
6	RDT
7	EN
8	IN
9	VSS
10	LO
—	EP

Electrical Characteristics

MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, T^J = +25°C, VDD = HB = 12 V, VSS = HS = 0 V, EN = 5 V. No load on LO or HO. RDT= 100kΩ (1) .

SYMBOL	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
IDD	VDD Quiescent Current	IN = EN = 0 V		0.34	0.6	mA
IDDO	VDD Operating Current	f = 500 kHz		2.1	3.5	mA
IHB	Total HB Quiescent Current	IN = EN = 0 V		0.06	0.2	mA
IHBO	Total HB Operating Current	f = 500 kHz		1.5	3	mA
IHBS	HB to VSS Current, Quiescent	HS = HB = 100 V		0.1	10	μA
IHBSO	HB to VSS Current, Operating	f = 500 kHz		0.5		mA
INPUT IN and EN
VIL	Low Level Input Voltage Threshold		0.8	1.8		V
VIH	High Level Input Voltage Threshold			1.8	2.2	V
Rpd	Input Pulldown Resistance Pin IN and EN		100	200	500	kΩ
DEAD-TIME CONTROLS
VRDT	Nominal Voltage at RDT		2.7	3	3.3	V
IRDT	RDT Pin Current Limit	RDT = 0 V	0.75	1.5	2.25	mA
	UNDERVOLTAGE PROTECTION
VDDR	VDD Rising Threshold		6.2	6.9	7.6	V
VDDH	VDD Threshold Hysteresis			0.5		V
VHBR	HB Rising Threshold		5.9	6.6	7.3	V
VHBH	HB Threshold Hysteresis			0.4		V
LO GATE DRIVER
VOLL	Low-Level Output Voltage	ILO = 100 mA		0.21	0.4	V
VOHL	High-Level Output Voltage	ILO = –100 mA, VOHL = VDD – VLO		0.5	0.85	V
IOHL	Peak Pullup Current	LO = 0 V		1.2		A
IOLL	Peak Pulldown Current	LO = 12 V		1.8		A
HO GATE DRIVER
VOLH	Low-Level Output Voltage	IHO = 100 mA		0.21	0.4	V
VOHH	High-Level Output Voltage	IHO = –100 mA, VOHH = HB – HO		0.5	0.85	V

⁽¹⁾ Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

⁽²⁾ Four-layer board with Cu finished thickness 1.5 oz, 1 oz, 1 oz, 1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50-mm × 50-mm ground and power planes embedded in PCB. See Application Note AN-1187 Leadless Leadframe Package (LLP) (SNOA401).

Absolute Maximum Ratings

	MIN	MAX	UNIT
VDD to VSS	–0.3	18	V
HB to HS	–0.3	18	V
IN and EN to VSS	–0.3	VDD + 0.3	V
LO to VSS	–0.3	VDD + 0.3	V
HO to VSS	HS – 0.3	HB + 0.3	V
(3) HS to VSS		100	V
HB to VSS		118	V
RDT to VSS	–0.3	5	V
Junction Temperature		150	°C
Storage temperature range, Tstg	–55	150	°C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Recommended Operating Conditions are conditions under which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits and associated test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(3) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed –1 V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15 V. For example, if VDD = 10 V, the negative transients at HS must not exceed –5 V.

6.2 ESD Ratings

			VALUE	UNIT
V(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)	±1500	V

⁽¹⁾ JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

	MIN	MAX	UNIT
VDD	8	14	V
HS(1)	–1	100	V
HB	HS + 8	HS + 14	V
HS Slew Rate		< 50	V/ns
Junction Temperature	–40	125	°C

(1) In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed –1 V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15 V. For example, if VDD = 10 V, the negative transients at HS must not exceed –5 V.

6.4 Thermal Information

			LM5102
	THERMAL METRIC(1)	DGS	DPR(2)
		10 PINS	10 PINS
RθJA	Junction-to-ambient thermal resistance	165.3	37.9
RθJC(top)	Junction-to-case (top) thermal resistance	58.9	38.1
RθJB	Junction-to-board thermal resistance	54.4	14.9
ψJT	Junction-to-top characterization parameter	6.2	0.4
ψJB	Junction-to-board characterization parameter	83.6	15.2
RθJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	4.4

6.5 Electrical Characteristics