LM5106MMX/NOPB.B

Half-Bridge Gate Driver

The LM5106MMX/NOPB.B is a half-bridge gate driver from Texas Instruments. View the full LM5106MMX/NOPB.B datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Overview

The LM5106 is a high-voltage gate driver designed to drive both the high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver can work with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turnon delay circuits. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout (UVLO) disables the gate driver when either the low side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5106 is offered in the 10-pin VSSOP or the thermally enhanced 10pin WSON plastic package.

Features

1 · Drives Both a High-Side and Low-Side N-Channel MOSFET
1.8-A Peak Output Sink Current
1.2-A Peak Output Source Current
Bootstrap Supply Voltage Range up to 118-V DC
Single TTL Compatible Input
Programmable Turnon Delays (Dead-Time)
Enable Input Pin
Fast Turnoff Propagation Delays (32 ns Typical)
Drives 1000 pF With 15-ns Rise and 10-ns Fall Time
Supply Rail Undervoltage Lockout
Low Power Consumption
10-Pin WSON Package (4 mm × 4 mm) and 10Pin VSSOP Package

Applications

Solid-State Motor Drives
Half-Bridge and Full-Bridge Power Converters

Pin Configuration

Pin Functions

Pin Functions

PIN	PIN	DESCRIPTION	APPLICATION INFORMATION
NO.	NAME	DESCRIPTION	APPLICATION INFORMATION
1	VDD	Positive gate drive supply	Decouple VDD to VSS using a low ESR/ESL capacitor, placed as close to the IC as possible.
2	HB	High-side gate driver bootstrap rail	Connect the positive terminal of bootstrap capacitor to the HB pin and connect negative terminal to HS. The Bootstrap capacitor should be placed as close to IC as possible.
3	HO	High-side gate driver output	Connect to the gate of high-side N-MOS device through a short, low inductance path.
4	HS	High-side MOSFET source connection	Connect to the negative terminal of the bootststrap capacitor and to the source of the high-side N-MOS device.
5	NC	Not connected
6	RDT	Dead-time programming pin	A resistor from RDT to VSS programs the turnon delay of both the high- and low-side MOSFETs. The resistor should be placed close to the IC to minimize noise coupling from adjacent PC board traces.
7	EN	Logic input for driver Disable/Enable	TTL compatible threshold with hysteresis. LO and HO are held in the low state when EN is low.
8	IN	Logic input for gate driver	TTL compatible threshold with hysteresis. The high-side MOSFET is turned on and the low-side MOSFET turned off when IN is high.
9	VSS	Ground return	All signals are referenced to this ground.
10	LO	Low-side gate driver output	Connect to the gate of the low-side N-MOS device with a short, low inductance path.
-	EP	Exposed Pad	The exposed pad has no electrical contact. Connect to system ground plane for reduced thermal resistance.

Electrical Characteristics

MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD = HB = 12 V, VSS = HS = 0 V, EN = 5 V. No load on LO or HO. RDT= 100k Ω (1) .

SYMBOL	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENTS	SUPPLY CURRENTS	SUPPLY CURRENTS	SUPPLY CURRENTS	SUPPLY CURRENTS	SUPPLY CURRENTS	SUPPLY CURRENTS
I DD	V DD Quiescent Current	IN = EN = 0 V		0.34	0.6	mA
I DDO	V DD Operating Current	f = 500 kHz		2.1	3.5	mA
I HB	Total HB Quiescent Current	IN = EN = 0 V		0.06	0.2	mA
I HBO	Total HB Operating Current	f = 500 kHz		1.5	3	mA
I HBS	HB to V SS Current, Quiescent	HS = HB = 100 V		0.1	10	μA
I HBSO	HB to V SS Current, Operating	f = 500 kHz		0.5		mA
INPUT IN and EN	INPUT IN and EN	INPUT IN and EN	INPUT IN and EN	INPUT IN and EN	INPUT IN and EN	INPUT IN and EN
V IL	Low Level Input Voltage Threshold		0.8	1.8		V
V IH	High Level Input Voltage Threshold			1.8	2.2	V
R pd	Input Pulldown Resistance Pin IN and EN		100	200	500	k Ω
DEAD-TIME CONTROLS	DEAD-TIME CONTROLS	DEAD-TIME CONTROLS	DEAD-TIME CONTROLS	DEAD-TIME CONTROLS	DEAD-TIME CONTROLS	DEAD-TIME CONTROLS
VRDT	Nominal Voltage at RDT		2.7	3	3.3	V
IRDT	RDT Pin Current Limit	RDT = 0 V	0.75	1.5	2.25	mA
UNDERVOLTAGE PROTECTION	UNDERVOLTAGE PROTECTION	UNDERVOLTAGE PROTECTION	UNDERVOLTAGE PROTECTION	UNDERVOLTAGE PROTECTION	UNDERVOLTAGE PROTECTION	UNDERVOLTAGE PROTECTION
V DDR	V DD Rising Threshold		6.2	6.9	7.6	V
V DDH	V DD Threshold Hysteresis			0.5		V
V HBR	HB Rising Threshold		5.9	6.6	7.3	V
V HBH	HB Threshold Hysteresis			0.4		V
LO GATE DRIVER	LO GATE DRIVER	LO GATE DRIVER	LO GATE DRIVER	LO GATE DRIVER	LO GATE DRIVER	LO GATE DRIVER
V OLL	Low-Level Output Voltage	I LO = 100 mA		0.21	0.4	V
V OHL	High-Level Output Voltage	I LO = -100 mA, V OHL = V DD - V LO		0.5	0.85	V
I OHL	Peak Pullup Current	LO = 0 V		1.2		A
I OLL	Peak Pulldown Current	LO = 12 V		1.8		A
HO GATE DRIVER	HO GATE DRIVER	HO GATE DRIVER	HO GATE DRIVER	HO GATE DRIVER	HO GATE DRIVER	HO GATE DRIVER
V OLH	Low-Level Output Voltage	I HO = 100 mA		0.21	0.4	V
V OHH	High-Level Output Voltage	I HO = -100 mA, V OHH = HB - HO		0.5	0.85	V

Absolute Maximum Ratings

	MIN	MAX	UNIT
V DD to V SS	-0.3	18	V
HB to HS	-0.3	18	V
IN and EN to V SS	-0.3	V DD + 0.3	V
LO to V SS	-0.3	V DD + 0.3	V
HO to V SS	HS - 0.3	HB + 0.3	V
HS to V SS (3)		100	V
HB to V SS		118	V
RDT to V SS	-0.3	5	V
Junction Temperature		150	°C
Storage temperature range, T stg	-55	150	°C

Recommended Operating Conditions

	MIN	MAX	UNIT
V DD	8	14	V
HS (1)	-1	100	V
HB	HS + 8	HS + 14	V
HS Slew Rate		< 50	V/ns
Junction Temperature	-40	125	°C

Thermal Information

		LM5102	LM5102
	THERMAL METRIC (1)	DGS	DPR (2)
		10 PINS	10 PINS
R θ JA	Junction-to-ambient thermal resistance	165.3	37.9
R θ JC(top)	Junction-to-case (top) thermal resistance	58.9	38.1
R θ JB	Junction-to-board thermal resistance	54.4	14.9
ψ JT	Junction-to-top characterization parameter	6.2	0.4
ψ JB	Junction-to-board characterization parameter	83.6	15.2
R θ JC(bot)	Junction-to-case (bottom) thermal resistance	N/A	4.4

Typical Application

The LM5106 is one of the latest generation of high-voltage gate drivers which are designed to drive both the high-side and low-side N-channel MOSFETs in a half-bridge/full bridge configuration or in a synchronous buck circuit. The floating high-side driver can operate with supply voltages up to 110 V. This allows for N-channel MOSFET control in half-bridge, full-bridge, push-pull, two switch forward and active clamp topologies.

The outputs of the LM5106 are controlled from a single input. The rising edge of each output can be delayed with a programming resistor.

Table 1. Highlights

FEATURE	BENEFIT
Programmable Turnon Delay	Allows optimization of gate drive timings in bridge topologies
Enable Pin	Reduces operating current when disabled to improved power system standby power
Low Power Consumption	Improves light load efficiency figures of the power stage.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
LM5106	Texas Instruments	—
LM5106MM/NOPB	Texas Instruments	—
LM5106MM/NOPB.A	Texas Instruments	—
LM5106MM/NOPB.B	Texas Instruments	—
LM5106MMX	Texas Instruments	—
LM5106MMX/NOPB	Texas Instruments	VSSOP-10-0.5mm
LM5106MMX/NOPB.A	Texas Instruments	—
LM5106SD/NOPB	Texas Instruments	—
LM5106SD/NOPB.A	Texas Instruments	—
LM5106SD/NOPB.B	Texas Instruments	—
LM5106SDX	Texas Instruments	—
LM5106SDX/NOPB	Texas Instruments	—
LM5106SDX/NOPB.A	Texas Instruments	—
LM5106SDX/NOPB.B	Texas Instruments	—
LM5406	Texas Instruments	—
LM5X06	Texas Instruments	—

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