Part: LM5106 — Texas Instruments

Type: Half-Bridge Gate Driver

Description: 100-V half-bridge gate driver with programmable dead-time, designed to drive both high-side and low-side N-channel MOSFETs with 1.8-A peak sink and 1.2-A peak source current.

Operating Conditions:

• Supply voltage (VDD): 8–14 V
• Operating temperature (Junction): -40 to 125 °C
• HS voltage: -1 to 100 V
• HB voltage: HS + 8 to HS + 14 V

Absolute Maximum Ratings:

• Max supply voltage (VDD to VSS): 18 V
• Max HB to VSS: 118 V
• Max junction temperature: 150 °C
• Max storage temperature: -55 to 150 °C

Key Specs:

• V DD Quiescent Current: 0.34 mA (Typ, IN = EN = 0 V)
• V DD Operating Current: 2.1 mA (Typ, f = 500 kHz)
• Low Level Input Voltage Threshold (VIL): 0.8 V (Min)
• High Level Input Voltage Threshold (VIH): 2.2 V (Max)
• Peak Pullup Current (IOHL/IOHH): 1.2 A (Typ)
• Peak Pulldown Current (IOLL/IOLH): 1.8 A (Typ)
• Lower/Upper Turn-Off Propagation Delay (tLPHL/tHPHL): 32 ns (Typ)
• Lower/Upper Turn-On Propagation Delay (tLPLH): 520 ns (Typ, RDT = 100k)
• Dead-time (DT1, DT2): 510 ns (Typ, RDT = 100k)
• Output Rise Time (tR): 15 ns (Typ, CL = 1000pF)
• Output Fall Time (tF): 10 ns (Typ, CL = 1000pF)

Features:

• Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1.8-A Peak Output Sink Current
• 1.2-A Peak Output Source Current
• Bootstrap Supply Voltage Range up to 118-V DC
• Single TTL Compatible Input
• Programmable Turnon Delays (Dead-Time)
• Enable Input Pin
• Fast Turnoff Propagation Delays (32 ns Typical)
• Drives 1000 pF With 15-ns Rise and 10-ns Fall Time
• Supply Rail Undervoltage Lockout
• Low Power Consumption

Applications:

• Solid-State Motor Drives
• Half-Bridge and Full-Bridge Power Converters
• Two Switch Forward Power Converters

Package:

• VSSOP (10)
• WSON (10)

• 1 · Drives Both a High-Side and Low-Side N-Channel MOSFET
• 1.8-A Peak Output Sink Current
• 1.2-A Peak Output Source Current
• Bootstrap Supply Voltage Range up to 118-V DC
• Single TTL Compatible Input
• Programmable Turnon Delays (Dead-Time)
• Enable Input Pin
• Fast Turnoff Propagation Delays (32 ns Typical)
• Drives 1000 pF With 15-ns Rise and 10-ns Fall Time
• Supply Rail Undervoltage Lockout
• Low Power Consumption
• 10-Pin WSON Package (4 mm × 4 mm) and 10Pin VSSOP Package

• Solid-State Motor Drives
• Half-Bridge and Full-Bridge Power Converters

LM5106MMX/NOPB Pinout

Package: VSSOP-10-0.5mm (DG5/WSON)

Notes

• Pin diagram confirms the pin numbering shown in the text table.
• VDD and VSS are power/ground pins; decouple VDD to VSS with a low ESR/ESL capacitor placed close to the IC.
• HB and HS are bootstrap circuit pins; connect bootstrap capacitor between HB and HS.
• RDT programs dead-time for both high- and low-side MOSFETs via a resistor to VSS.
• EN and IN are TTL-compatible logic inputs with hysteresis.
• HO and LO are gate driver outputs; route with short, low-inductance paths to MOSFET gates.
• NC (pin 5) is not connected internally.
• Exposed pad (EP) has no electrical connection but should be soldered to the system ground plane for thermal performance.

MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD = HB = 12 V, VSS = HS = 0 V, EN = 5 V. No load on LO or HO. RDT= 100k Ω (1) .

The LM5106 is one of the latest generation of high-voltage gate drivers which are designed to drive both the high-side and low-side N-channel MOSFETs in a half-bridge/full bridge configuration or in a synchronous buck circuit. The floating high-side driver can operate with supply voltages up to 110 V. This allows for N-channel MOSFET control in half-bridge, full-bridge, push-pull, two switch forward and active clamp topologies.

The outputs of the LM5106 are controlled from a single input. The rising edge of each output can be delayed with a programming resistor.

Table 1. Highlights