LM25183-Q1.HTML
LM25183 42-VIN PSR Flyback DC/DC Converter with 65-V, 2.5-A Power MOSFET
Manufacturer
Texas Instruments
Category
Switching Voltage Regulators
Overview
Part: LM25183 from Texas Instruments
Type: PSR Flyback DC/DC Converter
Key Specs:
- Input voltage range: 4.5 V to 42 V (operation down to 3.5 V after start-up)
- Total output regulation accuracy: ±1.5%
- Junction temperature range: –40°C to +150°C
- Integrated power MOSFET: 65-V, 0.11-Ω, 2.5-A
- Output power: up to 10 W
Features:
- Functional Safety-Capable
- Robust solution with only one component crossing the isolation barrier
- Optional VOUT temperature compensation
- Input UVLO and thermal shutdown protection
- Hiccup-mode overcurrent fault protection
- No optocoupler or transformer auxiliary winding required for VOUT regulation
- Internal loop compensation
- Quasi-resonant MOSFET turnoff in BCM
- External bias option for improved efficiency
- Single- and multi-output implementations
- Soft switching avoids diode reverse recovery
- Optimized for CISPR 32 EMI requirements
- Output voltage set by one resistor
- Internally-fixed or externally-programmable soft-start
- Precision enable input with hysteresis for adjustable line UVLO
- Automatic recovery from thermal shutdown
Applications:
- Motor drives: IGBT and SiC gate driver supplies
- Isolated field transmitters
- Isolated field actuators
- Isolated bias power rails
Package:
- WSON (8): 4.00 mm × 4.00 mm
Features
- Functional Safety-Capable
- Designed for reliable and rugged applications
- Wide input voltage range of 4.5 V to 42 V with operation down to 3.5 V after start-up
- Robust solution with only one component crossing the isolation barrier
- ±1.5% total output regulation accuracy
- Optional VOUT temperature compensation
- Input UVLO and thermal shutdown protection
- Hiccup-mode overcurrent fault protection
- –40°C to +150°C junction temperature range
- Integration reduces solution size and cost
- Integrated 65-V, 0.11-Ω power MOSFET
- No optocoupler or transformer auxiliary winding required for VOUT regulation
- Internal loop compensation
- High-efficiency PSR flyback operation
- Quasi-resonant MOSFET turnoff in BCM
- External bias option for improved efficiency
- Single- and multi-output implementations
- Ultra-low conducted and radiated EMI signatures
- Soft switching avoids diode reverse recovery
- Optimized for CISPR 32 EMI requirements
- Create a custom flyback regulator design using WEBENCH® Power Designer
Applications
- Motor drives: IGBT and SiC gate driver supplies
- Isolated field transmitters and field actuators
- Isolated bias power rails
Typical Application
Pin Configuration
Figure 5-1. 8-Pin WSON NGU Package With Wettable Flanks (Top View)
Electrical Characteristics
Typical values correspond to TJ = 25°C. Minimum and maximum limits aaply over the full –40°C to 150°C junction temperature range unless otherwise indicated. VIN = 12 V and VEN/UVLO = 2 V unless otherwise stated.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| ISHUTDOWN | VIN shutdown current | VEN/UVLO = 0 V | 1.8 | μA | ||
| IACTIVE | VIN active current | VEN/UVLO = 2.5 V, VRSET = 1.8 V | 260 | 375 | μA | |
| IACTIVE-BIAS | VIN current with BIAS connected | VSS/BIAS = 5 V | 25 | 50 | μA | |
| ENABLE AND INPUT UVLO | ||||||
| VSD-FALLING | Shutdown threshold | VEN/UVLO falling | 0.3 | V | ||
| VSD-RISING | Standby threshold | VEN/UVLO rising | 0.8 | 1 | V | |
| VUV-RISING | Enable threshold | VEN/UVLO rising | 1.45 | 1.5 | 1.53 | V |
| VUV-HYST | Enable voltage hysteresis | VEN/UVLO falling | 0.04 | 0.05 | V | |
| IUV-HYST | Enable current hysteresis | VEN/UVLO = 1.6 V | 4.2 | 5 | 5.5 | μA |
| FEEDBACK | ||||||
| IRSET | RSET current | RRSET = 12.1 kΩ | 100 | μA | ||
| VRSET | RSET regulation voltage | RRSET = 12.1 kΩ | 1.194 | 1.21 | 1.22 | V |
| VFB-VIN1 | FB to VIN voltage | IFB = 80 μA | –50 | mV | ||
| VFB-VIN2 | FB to VIN voltage | IFB = 120 μA | 50 | mV | ||
| SWITCHING FREQUENCY | ||||||
| FSW-MIN | Minimum switching frequency | 12 | kHz | |||
| FSW-MAX | Maximum switching frequency | 350 | kHz | |||
| tON-MIN | Minimum switch on-time | 140 | ns | |||
| DIODE THERMAL COMPENSATION | ||||||
| VTC | TC voltage | ITC = ±10 μA, TJ = 25°C | 1.2 | 1.27 | V | |
| POWER SWITCHES | ||||||
| RDS(on) | MOSFET on-state resistance | ISW = 100 mA, TJ = 25°C | 0.11 | 0.135 | Ω | |
| SOFT-START AND BIAS | ||||||
| ISS | SS ext capacitor charging current | 5 | μA | |||
| tSS | Internal SS time | 6 | ms | |||
| VBIAS-UVLO RISE | BIAS enable voltage | VSS/BIAS rising | 4.25 | 4.45 | V | |
| VBIAS-UVLO HYST | BIAS UVLO hysteresis | VSS/BIAS falling | 130 | mV | ||
| CURRENT LIMIT | ||||||
| ISW-PEAK | Peak current limit threshold | 2.2 | 2.5 | 2.65 | A | |
| THERMAL SHUTDOWN | ||||||
| TSD | Thermal shutdown threshold | TJ rising | 175 | °C | ||
| TSD-HYS | Thermal shutdown hysteresis | 10 | °C |
Absolute Maximum Ratings
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)(1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN to GND | –0.3 | 45 | ||
| EN/UVLO to GND | –0.3 | 45 | ||
| TC to GND | –0.3 | 6 | ||
| Input voltage | SS/BIAS to GND | –0.3 | 14 | V |
| FB to GND | –0.3 | 45.3 | ||
| FB to VIN | –0.3 | 0.3 | ||
| RSET to GND | –0.3 | 3 | ||
| SW to GND | –1.5 | 70 | ||
| Output voltage | SW to GND (20-ns transient) | –3 | V | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –55 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Input voltage | 4.5 | 42 | V | |
| VSW | SW voltage | 65 | V | ||
| VEN/UVLO | EN/UVLO voltage | 42 | V | ||
| VSS/BIAS | SS/BIAS voltage | 13 | V | ||
| TJ | Operating junction temperature | –40 | 150 | °C |
Thermal Information
| LM25183 | ||
|---|---|---|
| THERMAL METRIC(1) | NGU (WSON) | |
| 8 PINS | ||
| RΘJA | Junction-to-ambient thermal resistance | 40.9 |
| RΘJC(top) | Junction-to-case (top) thermal resistance | 36.9 |
| RΘJB | Junction-to-board thermal resistance | 17.7 |
| ΨJT | Junction-to-top characterization parameter | 0.4 |
| ΨJB | Junction-to-board characterization parameter | 17.7 |
| RΘJC(bot) | Junction-to-case (bottom) thermal resistance | 2.7 |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics report.
Product Folder Links: LM25183
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| LM25183 | Texas Instruments | — |
| LM25183-BASED | Texas Instruments | — |
| LM25183-Q1 | Texas Instruments | — |
| LM25183NGUR | Texas Instruments | |
| LM25183NGUR.A | Texas Instruments | — |
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