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ICE40HX8K-BG121

FPGA

The ICE40HX8K-BG121 is a fpga from Lattice Semiconductor Corporation. View the full ICE40HX8K-BG121 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Lattice Semiconductor Corporation

Category

FPGA

Package

121-TFBGA

Lifecycle

Active

Key Specifications

ParameterValue
Case/PackageTFBGA
China RoHSCompliant
DigiKey ProgrammableNot Verified
Height - Seated (Max)1.1 mm
Introduction Date2017-10-06
Length9 mm
Lifecycle StatusProduction (Last Updated: 4 months ago)
Max Operating Temperature100 °C
Max Supply Voltage1.26 V
Min Operating Temperature-40 °C
Min Supply Voltage1.14 V
Mounting TypeSurface Mount
Number of I/O93
Number of Inputs93
Number of LABs/CLBs960
Number of Logic Blocks (LABs)960
Number of Logic Elements/Cells7680
Number of Logic Elements/Cells7680
Number of Outputs93
Number of Terminals121
Operating Supply Voltage1.2 V
Operating Temperature-40°C ~ 100°C (TJ)
Package / Case121-TFBGA
REACH SVHCYes
RoHSCompliant
Supplier Device Package121-caBGA (9x9)
Temperature GradeIndustrial
Terminal Pitch800 µm
Total RAM Bits131072
Supply Voltage1.14V ~ 1.26V
Width9 mm

Overview

Part: iCE40 LP/HX Family — Lattice Semiconductor

Type: FPGA (Field-Programmable Gate Array)

Description: The iCE40 LP/HX family is a series of ultra-low power and high-performance FPGAs featuring programmable logic, embedded block RAM, PLLs, and flexible I/O, designed for various applications.

Operating Conditions:

  • Core supply voltage (VCC): 1.14–1.26 V
  • I/O driver supply voltage (VCCIO): 1.71–3.46 V
  • Operating temperature: -40 to 100 °C (Industrial Operation)

Absolute Maximum Ratings:

  • Max core supply voltage (VCC): 1.42 V
  • Max I/O supply voltage (VCCIO): 3.6 V
  • Max storage temperature: 150 °C
  • Max junction temperature: 125 °C

Key Specs:

  • Core Supply Voltage (VCC): 1.14–1.26 V
  • I/O Driver Supply Voltage (VCCIO): 1.71–3.46 V
  • PLL Supply Voltage (VCCPLL): 1.14–1.26 V
  • NVCM Programming and Operating Supply Voltage (VPP_2V5): 1.71–3.46 V (Slave SPI Config)
  • Input High Voltage (VIH) for LVCMOS33: 2.3 V (min)
  • Input Low Voltage (VIL) for LVCMOS33: 0.8 V (max)
  • Output High Voltage (VOH) for LVCMOS33: 2.4 V (min) at IOH = -4 mA
  • Output Low Voltage (VOL) for LVCMOS33: 0.4 V (max) at IOL = 4 mA

Features:

  • Programmable Logic Blocks (PLB)
  • sysCLOCK Phase Locked Loops (PLLs)
  • sysMEM Embedded Block RAM Memory
  • sysI/O with various standards support
  • Non-Volatile Configuration Memory (NVCM)
  • Power On Reset (POR)
  • Power Saving Options

Applications:

Package:

Features

  • Flexible Logic Architecture
  • Five devices with 384 to 7,680 LUT4s and 10 to 206 I/O
  • Ultra-low Power Devices
  • Advanced 40 nm low power process
  • As low as 21 μA standby power
  • Programmable low swing differential I/O
  • Embedded and Distributed Memory
  • Up to 128 kb sysMEM™ Embedded Block RAM
  • Pre-Engineered Source Synchronous I/O
  • DDR registers in I/O cells
  • High Current LED Drivers
  • Three High Current Drivers used for three different LEDs or one RGB LED
  • High Performance, Flexible I/O Buffer
  • Programmable sysI/O™ buffer supports wide range of interfaces:
  • LVCMOS 3.3/2.5/1.8
  • LVDS25E, subLVDS
  • Schmitt trigger inputs, to 200 mV typical hysteresis
  • Programmable pull-up mode
  • Flexible On-Chip Clocking
  • Eight low skew global signal resources
  • Up to two analog PLLs per device
  • Flexible Device Configuration
  • SRAM is configured through:
  • Standard SPI Interface
  • Internal Nonvolatile Configuration Memory (NVCM)
  • Broad Range of Package Options
  • WLCSP, QFN, VQFP, TQFP, ucBGA, caBGA, and csBGA package options
  • Small footprint package options
  • As small as 1.40 mm x 1.48 mm
  • Advanced halogen-free packaging

Electrical Characteristics

Over recommended operating conditions.

Table 4.5. DC Electrical Characteristics

SymbolParameterConditionMinTypMaxUnit
I IL , I IH 1, 3, 4, 5, 6, 7Input or I/O Leakage0 V < V IN < V CCIO + 0.2 V--±10μA
C 1 6, 7I/O Capacitance 2V CCIO = 3.3 V, 2.5 V, 1.8 V V CC = Typ, V IO = 0 to V CCIO + 0.2 V-6-pf
C 2 6, 7Global Input Buffer Capacitance 2V CCIO = 3.3 V, 2.5 V, 1.8 V V CC = Typ, V IO = 0 to V CCIO + 0.2 V-6-pf
V HYSTInput HysteresisV CCIO = 1.8 V, 2.5 V, 3.3 V-200-mV
I PU 6, 7Internal PIO Pull-upV CCIO = 1.8 V, 0 ≤ V IN ≤ 0.65 * V CCIO- 3-- 31μA
I PU 6, 7Internal PIO Pull-upV CCIO = 2.5 V, 0 ≤ V IN ≤ 0.65 * V CCIO- 8-- 72μA
I PU 6, 7Internal PIO Pull-upV CCIO = 3.3 V, 0 ≤ V IN ≤ 0.65 * V CCIO- 11-- 128μA
  1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured with the output driver active. Internal pull-up resistors are disabled.
  2. TJ 25 o C, f = 1.0 MHz.
  3. Refer to V IL and VIH in the sysI/O Single-Ended DC Electrical Characteristics table.
  4. Only applies to I/O in the SPI bank following configuration.
  5. Some products are clamped to a diode when VIN is larger than VCCIO.
  6. High current I/O has three sysI/O buffers connected together.
  7. The iCE40LP640 and iCE40LP1K SWG16 package has CDONE and a sysI/O buffer are connected together.

Absolute Maximum Ratings

ParameterMinMaxUnit
Supply Voltage V CC- 0.51.42V
Output Supply Voltage V CCIO- 0.53.6V
NVCM Supply Voltage V PP_2V5- 0.53.6V
PLL Supply Voltage V CCPLL- 0.51.42V
I/O Tri-state Voltage Applied- 0.53.6V
Dedicated Input Voltage Applied- 0.53.6V
Storage Temperature (Ambient)- 65150°C
Junction Temperature (T J )- 55125°C
  • Stress above those listed under the 'Absolute Maximum Ratings' may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
  • Compliance with the Thermal Management (FPGA-TN-02044) document is required.
  • All voltages referenced to GND.
  • I/O can support a 200 mV Overshoot above the Recommended Operating Conditions VCCIO (Max) and -200 mV Undershoot below VIL (Min). Overshoot and Undershoot is permitted for 25% duty cycle but must not exceed 1.6 ns.

Recommended Operating Conditions

SymbolParameterMinMaxUnit
V CC 1Core Supply VoltageCore Supply Voltage1.141.26V
V PP_2V5V PP_2V5 NVCM Programming and Operating Supply VoltageSlave SPI Configuration1.713.46V
V PP_2V5V PP_2V5 NVCM Programming and Operating Supply VoltageMaster SPI Configuration2.303.46V
V PP_2V5V PP_2V5 NVCM Programming and Operating Supply VoltageConfiguration from NVCM2.303.46V
V PP_2V5V PP_2V5 NVCM Programming and Operating Supply VoltageNVCM Programming2.303.00V
V PP_FAST 4,5Optional fast NVCM programming supply. Leave unconnected.Optional fast NVCM programming supply. Leave unconnected.N/AN/AV
V CCPLL 6,7PLL Supply VoltagePLL Supply Voltage1.141.26V
V CCIO 1,2,3I/O Driver Supply VoltageVCCIO0-31.713.46V
V CCIO 1,2,3I/O Driver Supply VoltageV CC_SPI1.713.46V
t JINDJunction Temperature, Industrial OperationJunction Temperature, Industrial Operation- 40100°C
t PROGJunction Temperature NVCM ProgrammingJunction Temperature NVCM Programming10.0030.00°C
  1. Like power supplies must be tied together. For example, if VCCIO and VCC_SPI are both the same voltage, they must also be the same supply.
  2. See recommended voltages by I/O standard in subsequent table.
  3. VCCIO pins of unused I/O banks should be connected to the VCC power supply on boards.
  4. VPP_FAST, used only for fast production programming, must be left floating or unconnected in applications.
  5. For CM36 and CM49 packages, if a user is not using the NVCM fast programming function, the VPP_FAST pin must be connected to the VCCIO_0_1 pin. Failing to do so will cause the I/O bank 1 from functioning properly.
  6. No PLL available on the iCE40LP384 and iCE40LP640 device.
  7. VCCPLL is tied to VCC internally in packages without PLL pins.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
ICE40Lattice Semiconductor Corporation
ICE40HX1KLattice Semiconductor Corporation
ICE40HX4KLattice Semiconductor Corporation
ICE40HX8KLattice Semiconductor Corporation
ICE40HX8K-CB132Lattice Semiconductor Corporation
ICE40HX8K-CM225Lattice Semiconductor Corporation
ICE40HX8K-CT256Lattice Semiconductor Corporation
ICE40LP1KLattice
ICE40LP384Lattice Semiconductor Corporation
ICE40LP4KLattice Semiconductor Corporation
ICE40LP640Lattice Semiconductor Corporation
ICE40LP8KLattice Semiconductor Corporation
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