GD32F103C8

Part: GD32F103xx — GigaDevice Semiconductor Inc.

Type: Arm Cortex-M3 32-bit Microcontroller

Description: 32-bit Arm Cortex-M3 MCU with embedded Flash and SRAM, advanced timers, and extensive communication peripherals.

Operating Conditions:

• Operating temperature: -40 to +85 °C

Absolute Maximum Ratings:

• Max supply voltage: VSS + 3.6 V (VDD, VDDA, VBAT)
• Max continuous current: ±25 mA (GPIO pins IIO)
• Max junction/storage temperature: 125 °C (TJ max), -65 to +150 °C (TSTG)

Key Specs:

• Maximum current for GPIO pins: ±25 mA
• Power dissipation (TA = 85 °C, LQFP48): 621 mW
• Power dissipation (TA = 85 °C, LQFP64): 647 mW
• Power dissipation (TA = 85 °C, LQFP100): 697 mW
• Power dissipation (TA = 85 °C, LQFP144): 820 mW
• Power dissipation (TA = 85 °C, QFN36): 926 mW
• Input voltage on 5V tolerant pin: VSS - 0.3 to VDD + 3.6 V
• Input voltage on other I/O pins: VSS - 0.3 to 3.6 V

Features:

• Arm Cortex-M3 32-bit RISC processor core
• Nested Vectored Interrupt Controller (NVIC)
• On-chip Flash memory and SRAM
• Multiple timers and PWM generation capabilities
• Real-time clock (RTC)
• Multi-channel DMA controller
• Analog-to-digital converter (ADC) and digital-to-analog converter (DAC)
• Rich communication interfaces: I2C, SPI, USART, I2S, SDIO, USBD, and CAN
• External memory controller (EXMC)

Applications:

• Industrial control and automation
• Motor drives and power management
• Medical and handheld equipment
• Consumer electronics and IoT devices

Package:

• LQFP144
• LQFP100
• LQFP64
• LQFP48
• QFN36

Figure 2-3. GD32F103Zx LQFP144 pinouts

Figure 2-4. GD32F103Vx LQFP100 pinouts

Figure 2-5. GD32F103Rx LQFP64 pinouts

Figure 2-6. GD32F103Cx LQFP48 pinouts

Figure 2-7. GD32F103Tx QFN36 pinouts

Table 4-34. ADC characteristics(For GD32F103x4/6/8/B devices)

Table 4-34. ADC characteristics(For GD32F103x4/6/8/B devices)

• (2) Guaranteed by design, not tested in production.
• (3) VREFP should always be equal to or less than VDDA, especially during power up.
• (2) Guaranteed by design, not tested in production.

Table 4-35. ADC characteristics(For GD32F103xC/D/E/F/G/I/K devices)

(3) VREFP should always be equal to or less than VDDA, especially during power up.

$$R_{AIN} < \frac{T_s}{f_{ADC} * C_{ADC} * \ln(2^{N+2})} - R_{ADC}$$

The formula above ( Equation 1 ) is used to determine the maximum external impedance allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).

Table 4-36. ADC RAIN max for fADC = 14 MHz (For GD32F103x4/6/8/B devices)

• T s (cycles) t s (μs) R AIN max (kΩ)
• 1.5 0.11 0.1
• 7.5 0.54 1.5
• 13.5 0.96 2.9
• 28.5 2.04 6.3
• 41.5 2.96 9.3
• 55.5 3.96 12.5
• 71.5 5.11 16.2
• 239.5 17.11 54.8

Table 4-36. ADC RAIN max for fADC = 14 MHz (For GD32F103x4/6/8/B devices)

Table 4-37. ADC RAIN max for fADC = 14 MHz (For GD32F103xC/D/E/F/G/I/K devices)

• T s (cycles) t s (μs) R AIN max (kΩ)
• 1.5 0.11 0.8
• 7.5 0.54 6.4
• 13.5 0.96 11.9
• 28.5 2.04 25.7
• 41.5 2.96 37.6
• 55.5 3.96 50.5
• 71.5 5.11 65.2
• 239.5 17.11 219.8

The maximum ratings are the limits to which the device can be subjected without permanently damaging the device. Note that the device is not guaranteed to operate properly beyond the maximum ratings. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability.

Table 4-1. Absolute maximum ratings (1)(4)

Thermal resistance is used to characterize the thermal performance of the package device, which is represented by the Greek letter 'θ'. For semiconductor devices, thermal resistance represents the steady-state temperature rise of the chip junction due to the heat dissipated on the chip surface.

θJA: Thermal resistance, junction-to-ambient.

θJB: Thermal resistance, junction-to-board.

θJC: Thermal resistance, junction-to-case.

ᴪJB: Thermal characterization parameter, junction-to-board.

ᴪJT: Thermal characterization parameter, junction-to-top center.

$$\theta_{\mathrm{JA}} = (T_{\mathrm{J}} - T_{\mathrm{A}}) / P_{\mathrm{D}}$$

$$\theta_{\mathrm{JB}}=(T_{\mathrm{J}}-T_{\mathrm{B}})/P_{\mathrm{D}}$$

$$\theta_{\text{JC}}=(T_{\text{J}}-T_{\text{C}})/P_{\text{D}}$$

Where, TJ = Junction temperature.

TA = Ambient temperature

TB = Board temperature

TC = Case temperature which is monitoring on package surface

PD = Total power dissipation

θJA represents the resistance of the heat flows from the heating junction to ambient air. It is an indicator of package heat dissipation capability. Lower θJA can be considerate as better overall thermal performance. θJA is generally used to estimate junction temperature.

θJB is used to measure the heat flow resistance between the chip surface and the PCB board.

θJC represents the thermal resistance between the chip surface and the package top case. θJC is mainly used to estimate the heat dissipation of the system (using heat sink or other heat dissipation methods outside the device package).

Table 5-6. Package thermal characteristics (1)

Table 5-6. Package thermal characteristics (1)

Figure 5-1. LQFP144 package outline

Table 5-1. LQFP144 package dimensions

(Original dimensions are in millimeters)

Table 5-1. LQFP144 package dimensions

Figure 5-2. LQFP144 recommended footprint

(Original dimensions are in millimeters)