DRV8833
DRV8833 Dual H-Bridge Motor Driver
Manufacturer
ti
Overview
Part: DRV8833, Texas Instruments
Type: Dual H-Bridge Motor Driver
Key Specs:
- MOSFET ON-Resistance (HS + LS): 360
- Output Current (PWP and RTY packages): 1.5-A RMS, 2-A Peak per H-Bridge
- Output Current (PW package): 500-mA RMS, 2-A Peak per H-Bridge
- Output Current (Parallel, PWP and RTY packages): 3-A RMS, 4-A Peak
- Output Current (Parallel, PW package): 1-A RMS, 4-A Peak
- Power Supply Voltage Range: 2.7 to 10.8 V
Features:
- Dual-H-Bridge Current-Control Motor Driver
- Can drive two DC motors or one stepper motor
- PWM Winding Current Regulation and Current Limiting
- Thermally Enhanced Surface-Mount Packages
- Internal shutdown functions for overcurrent protection, short-circuit protection, undervoltage lockout, overtemperature
- Low-power sleep mode
Applications:
- Battery-Powered Toys
- POS Printers
- Video Security Cameras
- Office Automation Machines
- Gaming Machines
- Robotics
Package:
- TSSOP (16): 5.00 mm × 4.40 mm
- HTSSOP (16): 5.00 mm × 4.40 mm
- WQFN (16): 4.00 mm × 4.00 mm
Features
- Dual-H-Bridge Current-Control Motor Driver
- Can Drive Two DC Motors or One Stepper Motor
- Low MOSFET ON-Resistance: HS + LS 360
- Output Current (at $V_M = 5 \text{ V}, 25^{\circ}\text{C}$ )
- 1.5-A RMS, 2-A Peak per H-Bridge in PWP and RTY Package Options
- 500-mA RMS, 2-A Peak per H-Bridge in PW Package Option
- Outputs can be in Parallel for
- 3-A RMS, 4-A Peak (PWP and RTY)
- 1-A RMS, 4-A Peak (PW)
- Wide Power Supply Voltage Range: 2.7 to 10.8 V
- PWM Winding Current Regulation and Current Limiting
- Thermally Enhanced Surface-Mount Packages
Applications
- Battery-Powered Toys
- POS Printers
- Video Security Cameras
- Office Automation Machines
- Gaming Machines
- Robotics
Pin Configuration
Pin Functions
| PIN | EXTERNAL COMPONENTS | ||||
|---|---|---|---|---|---|
| NAME | WQFN | HTSSOP, TSSOP | I/O (1) | DESCRIPTION | OR CONNECTIONS |
| POWER AN | D GROUND | ||||
| GND | 11 PPAD | 13 | _ | Device ground. HTSSOP package has PowerPAD. | Both the GND pin and device PowerPAD must be connected to ground. |
| VINT | 12 | 14 | _ | Internal supply bypass | Bypass to GND with 2.2-µF, 6.3-V capacitor. |
| VM | 10 | 12 | _ | Device power supply | Connect to motor supply. A 10-µF (minimum) ceramic bypass capacitor to GND is recommended. |
| VCP | 9 | 11 | Ю | High-side gate drive voltage | Connect a 0.01-µF, 16-V (minimum) X7R ceramic capacitor to VM. |
| CONTROL | |||||
| AIN1 | 14 | 16 | I | Bridge A input 1 | Logic input controls state of AOUT1. Internal pulldown. |
| AIN2 | 13 | 15 | I | Bridge A input 2 | Logic input controls state of AOUT2. Internal pulldown. |
| BIN1 | 7 | 9 | I | Bridge B input 1 | Logic input controls state of BOUT1. Internal pulldown. |
| BIN2 | 8 | 10 | I | Bridge B input 2 | Logic input controls state of BOUT2. Internal pulldown. |
| nSLEEP | 15 | 1 | I | Sleep mode input | Logic high to enable device, logic low to enter low-power sleep mode and reset all internal logic. Internal pulldown. |
(1) I = Input, O = Output, OZ = Tri-state output, OD = Open-drain output, IO = Input/output
Electrical Characteristics
$T_{A} = 25^{\circ}C$ (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER S | SUPPLY | |||||
| lvм | VM operating supply current | V M = 5 V, xIN1 = 0 V, xIN2 = 0 V | 1.7 | 3 | mA | |
| VMQ | VM sleep mode supply current | V M = 5 V | 1.6 | 2.5 | μA | |
| V UVLO | VM undervoltage lockout voltage | V M falling | 2.6 | V | ||
| V HYS | VM undervoltage lockout hysteresis | 90 | mV | |||
| LOGIC-LE | VEL INPUTS | |||||
| , | nSLEEP | 0.5 | ., | |||
| $V_{IL}$ | Input low voltage | All other pins | 0.7 | V | ||
| ., | nSLEEP | 2.5 | ., | |||
| $V_{IH}$ | Input high voltage | All other pins | 2 | V | ||
| V HYS | Input hysteresis | 0.4 | V | |||
| nSLEEP | 500 | |||||
| $R_{PD}$ | Input pulldown resistance | All except nSLEEP | 150 | kΩ | ||
| I IL | Input low current | VIN = 0 | 1 | μA | ||
| • | VIN = 3.3 V, nSLEEP | 6.6 | 13 | |||
| l IH | Input high current | VIN = 3.3 V, all except nSLEEP | 16.5 | 33 | μA | |
| t DEG | Input deglitch time | 450 | ns | |||
| OUTPUT (OPEN-DRAIN OUTPUT) | ||||||
| V OL | Output low voltage | I O = 5 mA | 0.5 | V | ||
| Юн | Output high leakage current | V O = 3.3 V | 1 | μΑ | ||
| H-BRIDGE | ||||||
| V M = 5 V, I O = 500 mA, T J = 25°C | 200 | |||||
| V M = 5 V, I O = 500 mA, T J = 85°C | 325 | |||||
| HS FET on resistance | V M = 2.7 V, I O = 500 mA, T J = 25°C | 250 | ||||
| $V_{M} = 2.7 \text{ V}, I_{O} = 500 \text{ mA}, T_{J} = 85^{\circ}\text{C}$ | 350 | |||||
| R DS(ON) | V M = 5 V, I O = 500 mA, T J = 25°C | 160 | mΩ | |||
| V M = 5 V, I O = 500 mA, T J = 85°C | 275 | |||||
| LS FET on resistance | V M = 2.7 V, I O = 500 mA, T J = 25°C | 200 | ||||
| $V_{M} = 2.7 \text{ V}, I_{O} = 500 \text{ mA}, T_{J} = 85^{\circ}\text{C}$ | 300 | |||||
| l OFF | Off-state leakage current | V M = 5 V, T J = 25°C, V OUT = 0 V | -1 | 1 | μA | |
| MOTOR D | PRIVER | 0 00. | I | |||
| f PWM | Current control PWM frequency | Internal PWM frequency | 50 | kHz | ||
| t R | Rise time | $V_{\rm M} = 5 \text{ V}, 16 \Omega \text{ to GND}, 10% \text{ to } 90% \text{ V}_{\rm M}$ | 180 | ns | ||
| t F | Fall time | $V_{\rm M} = 5 \text{ V}$ , 16 $\Omega$ to GND, 10% to 90% $V_{\rm M}$ | 160 | ns | ||
| t PROP | Propagation delay INx to OUTx | V M = 5 V | 1.1 | μs | ||
| DEAD | Dead time (1) | V M = 5 V | 450 | ns | ||
| TION CIRCUITS | 1 ···· | |||||
| I OCP | Overcurrent protection trip level | 2 | 3.3 | Α | ||
| t DEG | OCP Deglitch time | 4 | μs | |||
| t OCP | Overcurrent protection period | 1.35 | ms | |||
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(1) Internal dead time. External implementation is not necessary.
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VM | Power supply voltage | -0.3 | 11.8 | V |
| Digital input pin voltage | -0.5 | 7 | V | |
| xISEN pin voltage | -0.3 | 0.5 | V | |
| Peak motor drive output current | Internally | y limited | Α | |
| TJ | Operating junction temperature | -40 | 150 | °C |
| T stg | Storage temperature | -60 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Recommended Operating Conditions
$T_A = 25$ °C (unless otherwise noted)
| MIN | NOM MA | UNIT | ||
|---|---|---|---|---|
| $V_{M}$ | Motor power supply voltage range (1) | 2.7 | 10. | 8 V |
| $V_{\text{DIGIN}}$ | Digital input pin voltage range | -0.3 | 5.7 | 5 V |
| I OUT | RTY package continuous RMS or DC output current per bridge (2) | 1. | 5 A |
- (1) RDS(ON) increases and maximum output current is reduced at VM supply voltages below 5 V.
- (2) $V_M = 5 \text{ V}$ , power dissipation and thermal limits must be observed.
6.4 Thermal Information
| THERMAL METRIC (1) | PWP (HTSSOP) | RTY (WQFN) | PW (TSSOP) | UNIT | |
|---|---|---|---|---|---|
| 16 PINS | 16 PINS | 16 PINS | |||
| $R_{\theta JA}$ | Junction-to-ambient thermal resistance | 40.5 | 37.2 | 103.1 | °C/W |
| $R_{\theta JC(top)}$ | Junction-to-case (top) thermal resistance | 32.9 | 34.3 | 38 | °C/W |
| $R_{\theta JB}$ | Junction-to-board thermal resistance | 28.8 | 15.3 | 48.1 | °C/W |
| ΨЈT | Junction-to-top characterization parameter | 0.6 | 0.3 | 3 | °C/W |
| $\Psi_{JB}$ | Junction-to-board characterization parameter | 11.5 | 15.4 | 47.5 | °C/W |
| $R_{\theta JC(bot)}$ | Junction-to-case (bottom) thermal resistance | 4.8 | 3.5 | N/A | °C/W |
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
Thermal Information
| THERMAL METRIC (1) | PWP (HTSSOP) | RTY (WQFN) | PW (TSSOP) | UNIT | |
|---|---|---|---|---|---|
| 16 PINS | 16 PINS | 16 PINS | |||
| $R_{\theta JA}$ | Junction-to-ambient thermal resistance | 40.5 | 37.2 | 103.1 | °C/W |
| $R_{\theta JC(top)}$ | Junction-to-case (top) thermal resistance | 32.9 | 34.3 | 38 | °C/W |
| $R_{\theta JB}$ | Junction-to-board thermal resistance | 28.8 | 15.3 | 48.1 | °C/W |
| ΨЈT | Junction-to-top characterization parameter | 0.6 | 0.3 | 3 | °C/W |
| $\Psi_{JB}$ | Junction-to-board characterization parameter | 11.5 | 15.4 | 47.5 | °C/W |
| $R_{\theta JC(bot)}$ | Junction-to-case (bottom) thermal resistance | 4.8 | 3.5 | N/A | °C/W |
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
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