Overview

Part: CC2652R from Texas Instruments

Type: SimpleLink™ Multiprotocol 2.4 GHz Wireless MCU

Key Specs:

Processor: 48 MHz Arm® Cortex®-M4F
Flash Memory: 352 kB
ROM Memory: 256 kB
SRAM: 80 kB
Cache SRAM: 8 kB
ADC: 12-bit, 200 kSamples/s, 8 channels
RF Frequency: 2.4 GHz
RF Output Power: up to +5 dBm
Active Mode RX Current: 6.9 mA
Active Mode TX Current (0 dBm): 7.0 mA
Standby Current: 0.94 µA
Shutdown Current: 150 nA

Features:

EEMBC CoreMark® score: 148
2-pin cJTAG and JTAG debugging
Supports over-the-air (OTA) update
Ultra-low power sensor controller with 4 kB of SRAM
TI-RTOS, drivers, bootloader, Bluetooth® 5.2 low energy controller, and IEEE 802.15.4 MAC in ROM
Digital peripherals can be routed to any GPIO
4× 32-bit or 8× 16-bit general-purpose timers
2× comparators with internal reference DAC
Programmable current source
2× UART, 2× SSI (SPI, MICROWIRE, TI), I²C and I2S
Real-time clock (RTC)
AES 128- and 256-bit cryptographic accelerator
ECC and RSA public key hardware accelerator
SHA2 accelerator (full suite up to SHA-512)
True random number generator (TRNG)
Capacitive sensing, up to 8 channels
Integrated temperature and battery monitor
On-chip buck DC/DC converter
2.4 GHz RF transceiver compatible with Bluetooth 5.2 Low Energy and IEEE 802.15.4 PHY and MAC
Excellent receiver sensitivity: -100 dBm for 802.15.4 (2.4 GHz), -105 dBm for Bluetooth 125 kbps (LE Coded PHY)
Wireless protocols: Thread, Zigbee®, Bluetooth® 5.2 Low Energy, IEEE 802.15.4, IPv6-enabled smart objects (6LoWPAN), proprietary systems, SimpleLink™ TI 15.4 stack (2.4 GHz), and dynamic multiprotocol manager (DMM) driver

Applications:

2400 to 2480 MHz ISM and SRD systems
Building automation
Grid infrastructure
Other alternative energy
Industrial transport
Factory automation and control
Medical
Electronic point of sale (EPOS)
Communication equipment
Personal electronics

Package:

RGZ VQFN48: 7 mm × 7 mm

Features

Microcontroller
- Powerful 48 MHz Arm® Cortex®-M4F processor
- EEMBC CoreMark® score: 148
- 352 kB of in-system programmable flash
- 256 kB of ROM for protocols and library functions
- 8 kB of cache SRAM (alternatively available as general-purpose RAM)
- 80 kB of ultra-low leakage SRAM. The SRAM is protected by parity to ensure high reliability of operation.
- 2-pin cJTAG and JTAG debugging
- Supports over-the-air (OTA) update
Ultra-low power sensor controller with 4 kB of SRAM
- Sample, store, and process sensor data
- Operation independent from system CPU
- Fast wake-up for low-power operation
TI-RTOS, drivers, bootloader, Bluetooth® 5.2 low energy controller, and IEEE 802.15.4 MAC in ROM for optimized application size
RoHS-compliant package
- 7 mm × 7 mm RGZ VQFN48 (31 GPIOs)
Peripherals
- Digital peripherals can be routed to any GPIO
- 4× 32-bit or 8× 16-bit general-purpose timers
- 12-bit ADC, 200 kSamples/s, 8 channels
- 2× comparators with internal reference DAC (1× continuous time, 1× ultra-low power)
- Programmable current source
- 2× UART
- 2× SSI (SPI, MICROWIRE, TI)
- I ²C and I2S
- Real-time clock (RTC)
- AES 128- and 256-bit cryptographic accelerator
- ECC and RSA public key hardware accelerator
- SHA2 accelerator (full suite up to SHA-512)
- True random number generator (TRNG)
- Capacitive sensing, up to 8 channels
- Integrated temperature and battery monitor
External system
- On-chip buck DC/DC converter
Low power
- Active mode RX: 6.9 mA
- Active mode TX 0 dBm: 7.0 mA
- Active mode TX 5 dBm: 9.2 mA
- Active mode MCU 48 MHz (CoreMark): 3.4 mA (71 μA/MHz)
- Sensor controller, low power-mode, 2 MHz, running infinite loop: 30.1 μA
- Sensor controller, active mode, 24 MHz, running infinite loop: 808 μA
- Standby: 0.94 µA (RTC on, 80 kB RAM and CPU retention)
- Shutdown: 150 nA (wakeup on external events)
Radio section
- 2.4 GHz RF transceiver compatible with Bluetooth 5.2 Low Energy and earlier LE specifications and IEEE 802.15.4 PHY and MAC
- 3-wire, 2-wire, 1-wire PTA coexistence mechanisms
- Excellent receiver sensitivity:
  - -100 dBm for 802.15.4 (2.4 GHz),
  - -105 dBm for Bluetooth 125 kbps (LE Coded PHY)
- Output power up to +5 dBm with temperature compensation
- Suitable for systems targeting compliance with worldwide radio frequency regulations
  - EN 300 328, (Europe)
  - EN 300 440 Category 2
  - FCC CFR47 Part 15
  - ARIB STD-T66 (Japan)
Wireless protocols
- Thread, Zigbee®, Bluetooth® 5.2 Low Energy, IEEE 802.15.4, IPv6-enabled smart objects (6LoWPAN), proprietary systems, SimpleLink™ TI 15.4 stack (2.4 GHz), and dynamic multiprotocol manager (DMM) driver.
Development Tools and Software
- CC26x2R LaunchPad™ Development Kit
- SimpleLink™ LOWPOWER F2 Software Development Kit (SDK)
- SmartRF™ Studio for simple radio configuration
- Sensor Controller Studio for building low-power sensing applications

Applications

2400 to 2480 MHz ISM and SRD systems ¹ with down to 4 kHz of receive bandwidth
Building automation
- Building security systems – motion detector, electronic smart lock, door and window sensor, garage door system, gateway
- HVAC – thermostat, wireless environmental sensor, HVAC system controller, gateway
- Fire safety system – smoke and heat detector, fire alarm control panel (FACP)
- Video surveillance – IP network camera
- Elevators and escalators elevator main control panel for elevators and escalators
Grid infrastructure
- Smart meters – water meter, gas meter, electricity meter, and heat cost allocators
- Grid communications – wireless communications – Long-range sensor applications
Other alternative energy energy harvesting
Industrial transport – asset tracking
Factory automation and control
Medical
Electronic point of sale (EPOS) – Electronic Shelf Label (ESL)
Communication equipment
- Wired networking wireless LAN or Wi-Fi access points, edge router , small business router
Personal electronics

Electrical Characteristics

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX UNIT
TA = 25 °C, VDDS = 1.8 V
GPIO VOH at 8 mA load	IOCURR = 2, high-drive GPIOs only		1.56	V
GPIO VOL at 8 mA load	IOCURR = 2, high-drive GPIOs only		0.24	V
GPIO VOH at 4 mA load	IOCURR = 1		1.59	V
GPIO VOL at 4 mA load	IOCURR = 1		0.21	V
GPIO pullup current	Input mode, pullup enabled, Vpad = 0 V		73	µA
GPIO pulldown current	Input mode, pulldown enabled, Vpad = VDDS		19	µA
GPIO low-to-high input transition, with hysteresis	IH = 1, transition voltage for input read as 0 → 1		1.08	V
GPIO high-to-low input transition, with hysteresis	IH = 1, transition voltage for input read as 1 → 0		0.73	V
GPIO input hysteresis	IH = 1, difference between 0 → 1 and 1 → 0 points		0.35	V
TA = 25 °C, VDDS = 3.0 V
GPIO VOH at 8 mA load	IOCURR = 2, high-drive GPIOs only		2.59	V
GPIO VOL at 8 mA load	IOCURR = 2, high-drive GPIOs only		0.42	V
GPIO VOH at 4 mA load	IOCURR = 1		2.63	V
GPIO VOL at 4 mA load	IOCURR = 1		0.40	V
TA = 25 °C, VDDS = 3.8 V
GPIO pullup current	Input mode, pullup enabled, Vpad = 0 V		282	µA
GPIO pulldown current	Input mode, pulldown enabled, Vpad = VDDS		110	µA
GPIO low-to-high input transition, with hysteresis	IH = 1, transition voltage for input read as 0 → 1		1.97	V
GPIO high-to-low input transition, with hysteresis	IH = 1, transition voltage for input read as 1 → 0		1.55	V
GPIO input hysteresis	IH = 1, difference between 0 → 1 and 1 → 0 points		0.42	V
TA = 25 °C
VIH	Lowest GPIO input voltage reliably interpreted as a High	0.8*VDDS		V
VIL	Highest GPIO input voltage reliably interpreted as a Low		0.2*VDDS	V

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2)

| | | | MIN | MAX | UNIT | |---------|-----------------------------------|-------------------------------------------------------------------------|------|----------------------|------|--| | VDDS(3) | Supply voltage | | –0.3 | 4.1 | V | | | Voltage on any digital pin(4) (5) | | –0.3 | VDDS + 0.3, max 4.1 | V | | | | Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X48M_N and X48M_P | –0.3 | VDDR + 0.3, max 2.25 | V | | | Voltage on ADC input | Voltage scaling enabled | –0.3 | VDDS | | Vin | | Voltage scaling disabled, internal reference | –0.3 | 1.49 | V | | | | Voltage scaling disabled, VDDS as reference | –0.3 | VDDS / 2.9 | | | Input level, RF pins | | | 5 | dBm | | Tstg | Storage temperature | | –40 | 150 | °C |

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime
(2) All voltage values are with respect to ground, unless otherwise noted.
(3) VDDS_DCDC, VDDS2 and VDDS3 must be at the same potential as VDDS.
(4) Including analog capable DIOs.
(5) Injection current is not supported on any GPIO pin

8.2 ESD Ratings

				VALUE	UNIT
		Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)	All pins	±2000	V
VESD	Electrostatic discharge	Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)	All pins	±500	V

(1) JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process
(2) JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Operating junction temperature(2)	–40	105	°C
Operating supply voltage (VDDS)	1.8	3.8	V
Rising supply voltage slew rate	0	100	mV/µs
Falling supply voltage slew rate(1)	0	20	mV/µs

(1) For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22 µF VDDS input capacitor must be used to ensure compliance with this slew rate.
(2) For thermal resistance characteristics refer to Thermal Resistance Characteristics. For application considerations, refer to Junction Temperature.

8.4 Power Supply and Modules

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TYP	UNIT
VDDS Power-on-Reset (POR) threshold		1.1 - 1.55	V
VDDS Brown-out Detector (BOD) (1)	Rising threshold	1.77	V
VDDS Brown-out Detector (BOD), before initial boot (2)	Rising threshold	1.70	V
VDDS Brown-out Detector (BOD) (1)	Falling threshold	1.75	V

(1) For boost mode (VDDR =1.95 V), TI drivers software initialization will trim VDDS BOD limits to maximum (approximately 2.0 V)
(2) Brown-out Detector is trimmed at initial boot, value is kept until device is reset by a POR reset or the RESET_N pin

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Operating junction temperature(2)	–40	105	°C
Operating supply voltage (VDDS)	1.8	3.8	V
Rising supply voltage slew rate	0	100	mV/µs
Falling supply voltage slew rate(1)	0	20	mV/µs

(1) For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22 µF VDDS input capacitor must be used to ensure compliance with this slew rate.
(2) For thermal resistance characteristics refer to Thermal Resistance Characteristics. For application considerations, refer to Junction Temperature.

Thermal Information

| | | PACKAGE | |-----------------------|----------------------------------------------|---------------|---------------------| | | THERMAL METRIC(1) | RGZ
(VQFN) | UNIT | | | | 48 PINS | | R _θJA | Junction-to-ambient thermal resistance | 23.4 | °C/W ⁽²⁾ | | R _θJC(top) | Junction-to-case (top) thermal resistance | 13.3 | °C/W ⁽²⁾ | | R _θJB | Junction-to-board thermal resistance | 8.0 | °C/W ⁽²⁾ | | Ψυτ | Junction-to-top characterization parameter | 0.1 | °C/W ⁽²⁾ | | ΨЈB | Junction-to-board characterization parameter | 7.9 | °C/W ⁽²⁾ | | R _θJC(bot) | Junction-to-case (bottom) thermal resistance | 1.7 | °C/W ⁽²⁾ |

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2) °C/W = degrees Celsius per watt.