C47921

Part: BC546B, BC547A, B, C, BC548B, C — onsemi

Type: NPN Bipolar Junction Transistor (BJT)

Description: NPN silicon amplifier transistors offering various breakdown voltages and DC current gains, suitable for general-purpose amplification.

Operating Conditions:

• Operating temperature: Electrical characteristics specified at T_A = 25 °C

Absolute Maximum Ratings:

Key Specs:

• Collector-Emitter Breakdown Voltage (V_BR_CEO):
  • BC546: 65 V (min, I_C = 1.0 mA, I_B = 0)
  • BC547: 45 V (min, I_C = 1.0 mA, I_B = 0)
  • BC548: 30 V (min, I_C = 1.0 mA, I_B = 0)
• Collector-Base Breakdown Voltage (V_BR_CBO):
  • BC546: 80 V (min, I_C = 100 mA)
  • BC547: 50 V (min, I_C = 100 mA)
  • BC548: 30 V (min, I_C = 100 mA)
• Emitter-Base Breakdown Voltage (V_BR_EBO): 6.0 V (min, I_E = 10 mA, I_C = 0)
• DC Current Gain (h_FE):
  • BC547A: 110–220 (I_C = 2.0 mA, V_CE = 5.0 V)
  • BC546B/547B/548B: 200–450 (I_C = 2.0 mA, V_CE = 5.0 V)
  • BC548C: 420–800 (I_C = 2.0 mA, V_CE = 5.0 V)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 0.25 V (max, I_C = 10 mA, I_B = 0.5 mA)
• Base-Emitter Saturation Voltage (V_BE(sat)): 0.7 V (typ, I_C = 10 mA, I_B = 0.5 mA)
• Current-Gain-Bandwidth Product (f_T): 150 MHz (min, I_C = 10 mA, V_CE = 5.0 V, f = 100 MHz)
• Output Capacitance (C_obo): 1.7 pF (typ, V_CB = 10 V, I_C = 0, f = 1.0 MHz)

Features:

• Pb-Free Packages are Available

Applications:

Package:

• TO-92 (TO-226)

• Pb -Free Packages are Available*

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

*For additional information on our Pb -Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.