C20624744

The C20624744 is an electronic component. View the full C20624744 datasheet below including electrical characteristics, absolute maximum ratings.

Overview

Part: KSC2073 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: NPN Epitaxial Silicon Transistor with 150 V Collector-Base Voltage, 1.5 A Collector Current, and designed for TV Vertical Deflection Output.

Operating Conditions:

Operating temperature: -55 to 150 °C

Absolute Maximum Ratings:

Max Collector-Base Voltage (V_CBO): 150 V
Max Collector-Emitter Voltage (V_CEO): 150 V
Max Emitter-Base Voltage (V_EBO): 5 V
Max Collector Current (I_C): 1.5 A
Max Collector Dissipation (P_C): 25 W (T_C = 25 °C)
Max Junction Temperature (T_J): 150 °C
Max Storage Temperature (T_STG): -55 to 150 °C

Key Specs:

Collector-Base Breakdown Voltage (BV_CBO): 150 V min (I_C = 500 mA, I_E = 0)
Collector-Emitter Breakdown Voltage (BV_CEO): 150 V min (I_C = 10 mA, I_B = 0)
Emitter-Base Breakdown Voltage (BV_EBO): 5 V min (I_E = 500 mA, I_C = 0)
Collector Cut-Off Current (I_CBO): 10 mA max (V_CB = 120 V, I_E = 0)
DC Current Gain (h_FE): 40 min (V_CE = 10 V, I_C = 0.5 A)
Collector-Emitter Saturation Voltage (V_CE(sat)): 1 V max (I_C = 500 mA, I_B = 50 mA)
Current Gain Bandwidth Product (f_T): 4 MHz typ (V_CE = 10 V, I_C = 0.5 A)
Output Capacitance (C_ob): 50 pF typ (V_CB = 10 V, I_E = 0, f = 1 MHz)

Features:

Complement to KSA940
TV Vertical Deflection Output
Pb-Free and Halide Free

Applications:

TV Vertical Deflection Output

Package:

TO-220-3LD

Features

Complement to KSA940
TV Vertical Deflection Output
Collector-Base Voltage : V CBO = 150 V
These Devices are Pb-Free and Halide Free

Electrical Characteristics

(T A = 25 ° C unless otherwise noted.)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV CBO	Collector-Base Breakdown Voltage	I C = 500 m A, I E = 0	150	-	-	V
BV CEO	Collector-Emitter Breakdown Voltage	I C = 10 mA, I B = 0	150	-	-	V
BV EBO	Emitter-Base Breakdown Voltage	I E = 500 m A, I C = 0	5	-	-	V
I CBO	Collector Cut-Off Current	V CB = 120 V, I E = 0	-	-	10	m A
h FE	DC Current Gain	V CE = 10 V, I C = 0.5 A	40	75	140
V CE (sat)	Collector-Emitter Saturation Voltage	I C = 500 mA, I B = 50 mA	-	-	1	V
f T	Current Gain Bandwidth Product	V CE = 10 V, I C = 0.5 A	-	4	-	MHz
C ob	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz	-	50	-	pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Absolute Maximum Ratings

(T A = 25 ° C unless otherwise noted.)

Symbol	Parameter	Value	Unit
V CBO	Collector-Base Voltage	150	V
V CEO	Collector-Emitter Voltage	150	V
V EBO	Emitter-Base Voltage	5	V
I C	Collector Current	1.5	A
P C	Collector Dissipation (T C = 25 ° C)	25	W
T J	Junction Temperature	150	° C
T STG	Storage Temperature	- 55 X 150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

TO-220-3LD CASE 340AT

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
KSC2073	onsemi	—
KSC2073H2TU	onsemi	—
KSC2073TU	onsemi	—

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