BC68JA-02-STD

Part: BCW68GL

Type: PNP Silicon General Purpose Transistor

Key Specs:

• Collector-Emitter Voltage (VCEO): -45 Vdc
• Collector-Base Voltage (VCBO): -60 Vdc
• Emitter-Base Voltage (VEBO): -5.0 Vdc
• Collector Current - Continuous (IC): -800 mAdc
• Total Device Dissipation (PD) (FR-5 Board): 225 mW
• Total Device Dissipation (PD) (Alumina Substrate): 300 mW
• Junction and Storage Temperature (TJ, Tstg): -55 to +150 °C
• DC Current Gain (hFE) (IC = -10 mAdc, VCE = -1.0 Vdc): 120 (Min)
• Collector-Emitter Saturation Voltage (VCE(sat)) (IC = -

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

| Symbol | Characteristic | Min | Typ | Max | Unit | |--------------------|-------------------------------------------------------------------------------------------------------------------------------------|------------------|-------------|---------------|-------------|--| | | OFF CHARACTERISTICS | | V(BR)CEO | Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0) | −45 | − | − | Vdc | | V(BR)CES | Collector−Emitter Breakdown Voltage
(IC = −10 Adc, VEB = 0) | −60 | − | − | Vdc | | V(BR)EBO | Emitter−Base Breakdown Voltage
(IE = −10 Adc, IC = 0) | −5.0 | − | − | Vdc | | ICES | Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150C) | −
− | −
− | −20
−10 | nAdc
Adc | | IEBO | Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) | − | − | −20 | nAdc | | ON CHARACTERISTICS | | hFE | DC Current Gain
(IC
= −10 mAdc, VCE = −1.0 Vdc)
(IC
= −100 mAdc, VCE = −1.0 Vdc)
(IC
= −300 mAdc, VCE = −1.0 Vdc) | 120
160
60 | −
−
− | 400
−
− | − | | VCE(sat) | Collector−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc) | − | − | −0.7 | Vdc | | VBE(sat) | Base−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc) | − | − | −2.0 | Vdc | | | SMALL−SIGNAL CHARACTERISTICS | | fT | Current−Gain − Bandwidth Product
(IC
= −20 mAdc, VCE = −10 Vdc, f = 100 MHz) | 100 | − | − | MHz | | Cobo | Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz) | − | − | 18 | pF | | Cibo | Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz) | − | − | 105 | pF | | NF | Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) | − | − | 10 | dB | Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

• 1. $FR-5 = 1.0 \times 0.75 \times 0.062$ in.
• 1. Alumina = $0.4 \times 0.3 \times 0.024$ in 99.5% alumina.

SOT-23 CASE 318 STYLE 6