2N7000TA
N-Channel Enhancement Mode MOSFETThe 2N7000TA is a n-channel enhancement mode mosfet from onsemi. View the full 2N7000TA datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 2N7000TA datasheet (PDF) — the source this page was extracted from.
Manufacturer
onsemiCategory
N-Channel Enhancement Mode MOSFET
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle
Production (Last Updated: 3 weeks ago)
2N7000TA Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | TO-92-3 |
| China RoHS | Compliant |
| Contact Plating | Copper, Silver, Tin |
| Continuous Drain Current (ID) | 200 mA |
| Continuous Drain Current | 200mA (Tc) |
| Current Rating | 200 mA |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 5 Ω |
| Drain to Source Voltage (Vds) | 60 V |
| Drain-Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| FET Type | N-Channel |
| Gate to Source Voltage (Vgs) | 30 V |
| Height | 5.33 mm |
| Input Capacitance | 50 pF |
| Input Capacitance (Ciss) | 50 pF @ 25 V |
| Introduction Date | 2013-11-14 |
| Lead Free | Lead Free |
| Length | 5.2 mm |
| Lifecycle Status | Production (Last Updated: 3 weeks ago) |
| Manufacturer Package Identifier | TO-92 3L |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 400 mW |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Packaging | Ammo Pack |
| Power Dissipation | 400 mW |
| Power Dissipation (Max) | 400mW (Ta) |
| Radiation Hardening | No |
| Rds(on) | 5Ohm @ 500mA, 10V Ω |
| Rds On Max | 5 Ω |
| REACH SVHC | Unaffected |
| Resistance | 5 Ω |
| Rise Time | 10 ns |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Standard Pack Qty | 2000 |
| Supplier Device Package | TO-92-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Threshold Voltage | 3.9 V |
| Turn-Off Delay Time | 10 ns |
| Turn-On Delay Time | 10 ns |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3V @ 1mA |
| Voltage Rating (DC) | 60 V |
| Width | 4.19 mm |
2N7000TA Overview
Part: 2N7000BU / 2N7000TA — onsemi
Type: N-Channel Enhancement Mode Small-Signal MOSFET
Description: 60 V, 200 mA continuous (1 A pulsed) N-channel DMOS MOSFET with RDS(on) up to 5.0 Ω at VGS = 10 V, in a TO-92 package.
Operating Conditions:
- Supply voltage: not applicable (discrete MOSFET; VGS ±30 V max)
- Operating temperature: -55 to 150 °C (junction)
- Suited for applications up to 400 mA DC, with pulsed currents up to 2 A (per description)
Absolute Maximum Ratings:
- Drain-to-source voltage (VDSS): 60 V
- Gate-to-source voltage (VGS): ±30 V
- Continuous drain current: 200 mA (TC = 25 °C); 110 mA (TC = 100 °C)
- Pulsed drain current (IDM): 1000 mA
- Operating junction and storage temperature: -55 to 150 °C
- Lead soldering temperature: 300 °C (1/8 inch from case, 5 s)
Key Specs:
- BVDSS: 60 V min (VGS = 0 V, ID = 250 μA)
- VGS(th): 0.3 to 3.9 V (VDS = VGS, ID = 250 μA); 0.4 to 3.0 V (ID = 1 mA)
- RDS(on): 5.0 Ω max (VGS = 10 V, ID = 0.5 A)
- Forward transconductance gfs: 0.1 S min, 0.3 S typ (VDS = 15 V, ID = 0.5 A)
- IGSS: ±100 nA max (VGS = ±15 V)
- IDSS: 1 μA max (VDS = 60 V)
- Ciss / Coss / Crss: 30 / 12 / 3.0 pF typ (VDS = 25 V, f = 1 MHz)
- Switching times (VDD = 30 V, ID = 0.5 A, RG = 15 Ω): td(on), tr, td(off), tf each 10 ns max
- Power dissipation: 400 mW; RθJA 312.5 °C/W (FR-4 PCB)
Features:
- Improved inductive ruggedness
- Fast switching times
- Lower input capacitance
- Improved high-temperature reliability
- Extended safe operating area
- Pb-free device
Applications:
- Small servo motor control
- Power MOSFET gate drivers
- Low-voltage, low-current switching applications
Package:
- TO-92 3 (2N7000BU, 10000 per bulk bag)
- TO-92 3 (2N7000TA, 2000 per fan-fold)
2N7000TA Features
- Improved Inductive Ruggedness
- Fast Switching Times
- Lower Input Capacitance
- Improved High -Temperature Reliability
- Extended Safe Operating Area
- This is a Pb -Free Device
2N7000TA Electrical Characteristics
(Values are at T A = 25 ° C unless otherwise noted.)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| B VDSS | Drain - Source Breakdown Voltage | V GS = 0 V, I D = 250 m A | 60 | - | - | V |
| V GS(th) | Gate Threshold Voltage | V DS = V GS , I D = 250 m A | 0.3 | - | 3.9 | V |
| V GS(th) | V DS = V GS , I D = 1 mA | 0.4 | - | 3.0 | ||
| I GSS | Gate - Source Leakage , Forward | V GS = 15 V | - | - | 100 | nA |
| I GSS | Gate - Source Leakage , Reverse | V GS = - 15 V | - | - | - 100 | |
| I DSS | Drain - to - Source Leakage Current | V DS = 60 V | - | - | 1 | mA |
| I DSS | V DS = 45 V, T C = 125 ° C | - | - | 1000 | ||
| R DS(ON) | Static Drain - Source On - State Resistance (Note 3) | V GS = 10 V, I D = 0.5 A | - | - | 5.0 | W |
| g fs | Forward Transconductance (Note 3) | V DS = 15 V, I D = 0.5 A | 0.1 | 0.3 | - | S |
| C iss | Input Capacitance | V GS = 0 V, V DS = 25 V, f = 1 MHz | - | 30 | - | pF |
| C oss | Output Capacitance | - | 12 | - | pF | |
| C rss | Reverse Transfer Capacitance | - | 3.0 | - | pF | |
| t d(on) | Turn - On Delay | V DD = 30 V, I D = 0.5 A, R G = 15 W (Note 3), (Note 4) | - | - | 10 | ns |
| t r | Rise Time | - | - | 10 | ns | |
| t d(off) | Turn - Off Delay | - | - | 10 | ns | |
| t f | Fall Time | - | - | 10 | ns |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
-
Pulse test: pulse width = 250 μ s, duty cycle ≤ 2%
-
Essentially independent of operating temperature.
2N7000TA Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V DSS | Drain - to - Source Voltage | 60 | V |
| I D | Continuous Drain Current (T C = 25 ° C) | 200 | mA |
| I D | Continuous Drain Current (T C = 100 ° C) | 110 | mA |
| I DM | Drain Current Pulsed (Note 1) | 1000 | mA |
| V GS | Gate - to - Source Voltage | ± 30 | V |
| T J , T STG | Operating Junction and Storage Temperature Range | - 55 to 150 | ° C |
| T L | Maximum Lead Temperature for Soldering Purposes, 1/8 - inch from Case for 5 Seconds | 300 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Repetitive rating: pulse width limited by maximum junction temperature.
2N7000TA Thermal Information
(Values are at T A = 25 ° C unless otherwise noted.)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| P D | Total Power Dissipation (T C = 25 ° C) | 400 | mW |
| Linear Derating Factor | 3.2 | mW/ ° C | |
| R q JA | Thermal Resistance, Junction - to - Ambient | 312.5 | ° C/W |
- Device mounted on FR -4 PCB, board size = 101.5 mm x 114.5 mm.
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