W25Q20EW-JQ
Serial NOR Flash MemoryThe W25Q20EW-JQ is a serial nor flash memory from Winbond. View the full W25Q20EW-JQ datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
W25Q20EW-JQ shares its datasheet with W25Q20EW, whose page lists every part number it covers.
Official W25Q20EW-JQ datasheet (PDF) — the source this page was extracted from.
Manufacturer
WinbondCategory
Serial NOR Flash Memory
W25Q20EW-JQ Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | SOP |
| China RoHS | Compliant |
| Clock Frequency | 104 MHz |
| DigiKey Programmable | Not Verified |
| Frequency | 104 MHz |
| Height - Seated (Max) | 1.75 mm |
| Interface | SPI |
| Introduction Date | 2015-05-27 |
| Length | 4.85 mm |
| Lifecycle Status | Production (Last Updated: 1 month ago) |
| Max Operating Temperature | 85 °C |
| Max Supply Current | 20 mA |
| Max Supply Voltage | 1.95 V |
| Memory Format | FLASH |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 256K x 8 |
| Memory Size | 2Mbit |
| Memory Type | FLASH |
| Memory Type | Non-Volatile |
| Min Operating Temperature | -40 °C |
| Min Supply Voltage | 1.65 V |
| Mounting Type | Surface Mount |
| Nominal Supply Voltage (DC) | 1.8 V |
| Number of Circuits | 1 |
| Number of Terminals | 8 |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Tube |
| REACH SVHC | Unaffected |
| RoHS | Compliant |
| Schedule B | 8542320070 |
| Standard Pack Qty | 100 |
| Supplier Device Package | 8-SOIC |
| Diode Technology | FLASH - NOR |
| Temperature Grade | Industrial |
| Terminal Pitch | 1.27 mm |
| Supply Voltage | 1.65V ~ 1.95V |
| Width | 3.9 mm |
| Write Cycle Time | 800µs |
W25Q20EW-JQ Overview
Part: W25Q20EW — Winbond
Type: Serial NOR Flash Memory (SPI / Dual / Quad SPI)
Description: 1.65–1.95 V, 2M-bit (256K-byte) serial flash with 4KB sectors, standard/Dual/Quad SPI and clock operation up to 104 MHz.
Operating Conditions:
- Supply voltage: 1.65–1.95 V
- Operating temperature: -40 to +85 °C (Industrial; -40 to +105 °C for the extended grade)
- Max SPI clock: 104 MHz (208 MHz equivalent Dual I/O, 416 MHz equivalent Quad I/O)
Absolute Maximum Ratings:
- Max supply voltage: -0.6 to 2.5 V
- Voltage on any pin: -0.6 to VCC+0.4 V (relative to ground)
- Transient voltage on any pin: -2.0 V to VCC+2.0 V (<20 ns)
- Storage temperature: -65 to +150 °C
- ESD (HBM): ±2000 V
Key Specs:
- Memory: 2M-bit / 256K-byte, 1,024 pages of 256 bytes
- Erase units: 64 sectors (4KB), 8 blocks (32KB), 4 blocks (64KB)
- Max SPI clock: 104 MHz
- Active current: 1 mA (typ.)
- Power-down current: <1 μA (typ.)
- Page program (1–256 bytes): <1 ms
- Endurance: min. 100K program-erase cycles per sector
- Data retention: more than 20 years
Features:
- Standard, Dual and Quad SPI (CLK, /CS, IO0–IO3)
- Data transfer up to 50 MB/s
- Uniform 4KB sector, 32KB and 64KB block erase
- Erase/Program Suspend and Resume
- Power Supply Lock-Down and special OTP protection
- Top/Bottom and Complement array protection
- Volatile and non-volatile status register bits
- Discoverable Parameters (SFDP) register
- 3×256-byte security registers with OTP locks
- JEDEC manufacturer/device ID with 64-bit unique serial number
- Hold pin and write protect pin
Applications:
- Code shadowing to RAM
- Execute-in-place (XIP) code from Dual/Quad SPI
- Storage of voice, text and data
Package:
- 8-pin SOIC 150-mil (SN)
- 8-pin VSOP 150-mil (SV)
- 8-pad USON 2x3x0.6 mm (UX)
- 8-ball WLCSP (BY)
W25Q20EW-JQ Features
- Family of SpiFlash Memories
- 2M-bit/256K-byte (262,144)
- 256-byte per programmable page
- Uniform 4KB Sectors, 32KB & 64KB Blocks
- SPI with Single / Dual Outputs / I/O
- Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
- Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
- Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
- Data Transfer up to 50MB / second
- Clock operation to 104MHz.
- 208/416MHz equivalent Dual/Quad SPI
- Auto-increment Read capability.
- Flexible Architecture with 4KB sectors
- Uniform Sector/Block Erase (4/32/64-kbytes)
- Program one to 256 bytes < 1ms
- Erase/Program Suspend & Resume
- Min. 100K Program-Erase cycles per sector
- More than 20-year data retention
W25Q20EW-JQ Pin Configuration
Figure 1a.W25Q20EW Pin Assignments, 8-pin SOIC 150-mil and VSOP 150-mil (Package Code SN & SV)
W25Q20EW-JQ Electrical Characteristics
| PARAMETER | SYMBO L | CONDITIONS | SPEC - MIN | SPEC - TYP | SPEC - MAX | UNIT |
|---|---|---|---|---|---|---|
| Input Capacitance | CIN (1) | VIN = 0V | 6 | pF | ||
| Output Capacitance | Cout (1) | VOUT = 0V | 8 | pF | ||
| Input Leakage | I LI | ±2 | μA | |||
| I/O Leakage | ILO | ±2 | μA | |||
| Standby Current | ICC1 | /CS = VCC, VIN = GND or VCC (< 85 °C ) | 10 | 25 | μA | |
| Standby Current | ICC1 | /CS = VCC, VIN = GND or VCC (<105 °C ) | 10 | 40 | μA | |
| Power-down Current | ICC2 | /CS = VCC, VIN = GND or VCC (< 85 °C ) | 0.5 | 7.5 | μA | |
| Power-down Current | ICC2 | /CS = VCC, VIN = GND or VCC (<105 °C ) | 0.5 | 12 | μA | |
| Current Read Data / Dual /Quad 1MHz | ICC3 (2) | C = 0.1 VCC / 0.9 VCC DO = Open | 1 | 3 | mA | |
| Current Read Data / Dual /Quad 50MHz | ICC3 (2) | C = 0.1 VCC / 0.9 VCC DO = Open | 4 | 6 | mA | |
| Current Read Data / Dual Output / Quad Output Read 104MHz | Icc3 (2) | C = 0.1 VCC / 0.9 VCC DO = Open | 6 | 8 | mA | |
| Current Write Status Register | Icc4 | /CS = VCC | 15 | 20 | mA | |
| Current Page Program | Icc5 | /CS = VCC | 15 | 20 | mA | |
| Current Sector/Block Erase | Icc6 | /CS = VCC | 15 | 20 | mA | |
| Current Chip Erase | Icc7 | /CS = VCC | 15 | 20 | mA | |
| Input Low Voltage | Vil | -0.5 | VCC x 0.3 | V | ||
| Input High Voltage | Vih | VCC x 0.7 | VCC +0.4 | V | ||
| Output Low Voltage | Vol | Iol = 100 μA | 0.2 | V | ||
| Output High Voltage | Voh | Ioh = -100 μA | VCC - 0.2 | V |
- Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V.
- Checker Board Pattern.
- 52 - -Revision K
W25Q20EW-JQ Absolute Maximum Ratings
| PARAMETERS | SYMBOL | CONDITIONS | RANGE | UNIT |
|---|---|---|---|---|
| Supply Voltage | VCC | -0.6 to 2.5V | V | |
| Voltage Applied to Any Pin | VIO | Relative to Ground | -0.6 to VCC+0.4 | V |
| Transient Voltage on any Pin | VIOT | <20nS Transient Relative to Ground | -2.0V to VCC+2.0V | V |
| Storage Temperature | TSTG | -65 to +150 | ° C | |
| Lead Temperature | TLEAD | See Note (2) | ° C | |
| Electrostatic Discharge Voltage | VESD | Human Body Model (3) | -2000 to +2000 | V |
-
This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
-
Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
-
JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| W25Q20EW | Winbond | — |
| W25Q20EW-IQ | Winbond | — |
| W25Q20EWSNIG | Winbond | 8-SOIC (0.154", 3.90mm Width) |
| W25Q20EWUXIE | Winbond | — |
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