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W25Q20EW

Serial NOR Flash Memory

The W25Q20EW is a serial nor flash memory from Winbond. View the full W25Q20EW datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official W25Q20EW datasheet (PDF) — the source this page was extracted from.

Manufacturer

Winbond

Category

Serial NOR Flash Memory

W25Q20EW Key Specifications

ParameterValue
Case/PackageSOP
China RoHSCompliant
Clock Frequency104 MHz
DigiKey ProgrammableNot Verified
Frequency104 MHz
Height - Seated (Max)1.75 mm
InterfaceSPI
Introduction Date2015-05-27
Length4.85 mm
Lifecycle StatusProduction (Last Updated: 1 month ago)
Max Operating Temperature85 °C
Max Supply Current20 mA
Max Supply Voltage1.95 V
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization256K x 8
Memory Size2Mbit
Memory TypeFLASH
Memory TypeNon-Volatile
Min Operating Temperature-40 °C
Min Supply Voltage1.65 V
Mounting TypeSurface Mount
Nominal Supply Voltage (DC)1.8 V
Number of Circuits1
Number of Terminals8
Operating Temperature-40°C ~ 85°C (TA)
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingTube
REACH SVHCUnaffected
RoHSCompliant
Schedule B8542320070
Standard Pack Qty100
Supplier Device Package8-SOIC
Diode TechnologyFLASH - NOR
Temperature GradeIndustrial
Terminal Pitch1.27 mm
Supply Voltage1.65V ~ 1.95V
Width3.9 mm
Write Cycle Time800µs

W25Q20EW Overview

Part: W25Q20EW — Winbond

Type: Serial NOR Flash Memory (SPI / Dual / Quad SPI)

Description: 1.65–1.95 V, 2M-bit (256K-byte) serial flash with 4KB sectors, standard/Dual/Quad SPI and clock operation up to 104 MHz.

Operating Conditions:

  • Supply voltage: 1.65–1.95 V
  • Operating temperature: -40 to +85 °C (Industrial; -40 to +105 °C for the extended grade)
  • Max SPI clock: 104 MHz (208 MHz equivalent Dual I/O, 416 MHz equivalent Quad I/O)

Absolute Maximum Ratings:

  • Max supply voltage: -0.6 to 2.5 V
  • Voltage on any pin: -0.6 to VCC+0.4 V (relative to ground)
  • Transient voltage on any pin: -2.0 V to VCC+2.0 V (<20 ns)
  • Storage temperature: -65 to +150 °C
  • ESD (HBM): ±2000 V

Key Specs:

  • Memory: 2M-bit / 256K-byte, 1,024 pages of 256 bytes
  • Erase units: 64 sectors (4KB), 8 blocks (32KB), 4 blocks (64KB)
  • Max SPI clock: 104 MHz
  • Active current: 1 mA (typ.)
  • Power-down current: <1 μA (typ.)
  • Page program (1–256 bytes): <1 ms
  • Endurance: min. 100K program-erase cycles per sector
  • Data retention: more than 20 years

Features:

  • Standard, Dual and Quad SPI (CLK, /CS, IO0–IO3)
  • Data transfer up to 50 MB/s
  • Uniform 4KB sector, 32KB and 64KB block erase
  • Erase/Program Suspend and Resume
  • Power Supply Lock-Down and special OTP protection
  • Top/Bottom and Complement array protection
  • Volatile and non-volatile status register bits
  • Discoverable Parameters (SFDP) register
  • 3×256-byte security registers with OTP locks
  • JEDEC manufacturer/device ID with 64-bit unique serial number
  • Hold pin and write protect pin

Applications:

  • Code shadowing to RAM
  • Execute-in-place (XIP) code from Dual/Quad SPI
  • Storage of voice, text and data

Package:

  • 8-pin SOIC 150-mil (SN)
  • 8-pin VSOP 150-mil (SV)
  • 8-pad USON 2x3x0.6 mm (UX)
  • 8-ball WLCSP (BY)

W25Q20EW Features

  • Family of SpiFlash Memories
  • 2M-bit/256K-byte (262,144)
  • 256-byte per programmable page
  • Uniform 4KB Sectors, 32KB & 64KB Blocks
  • SPI with Single / Dual Outputs / I/O
  • Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
  • Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
  • Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
  • Data Transfer up to 50MB / second
  • Clock operation to 104MHz.
  • 208/416MHz equivalent Dual/Quad SPI
  • Auto-increment Read capability.
  • Flexible Architecture with 4KB sectors
  • Uniform Sector/Block Erase (4/32/64-kbytes)
  • Program one to 256 bytes < 1ms
  • Erase/Program Suspend & Resume
  • Min. 100K Program-Erase cycles per sector
  • More than 20-year data retention

W25Q20EW Pin Configuration

Figure 1a.W25Q20EW Pin Assignments, 8-pin SOIC 150-mil and VSOP 150-mil (Package Code SN & SV)

W25Q20EW Electrical Characteristics

PARAMETERSYMBO LCONDITIONSSPEC - MINSPEC - TYPSPEC - MAXUNIT
Input CapacitanceCIN (1)VIN = 0V6pF
Output CapacitanceCout (1)VOUT = 0V8pF
Input LeakageI LI±2μA
I/O LeakageILO±2μA
Standby CurrentICC1/CS = VCC, VIN = GND or VCC (< 85 °C )1025μA
Standby CurrentICC1/CS = VCC, VIN = GND or VCC (<105 °C )1040μA
Power-down CurrentICC2/CS = VCC, VIN = GND or VCC (< 85 °C )0.57.5μA
Power-down CurrentICC2/CS = VCC, VIN = GND or VCC (<105 °C )0.512μA
Current Read Data / Dual /Quad 1MHzICC3 (2)C = 0.1 VCC / 0.9 VCC DO = Open13mA
Current Read Data / Dual /Quad 50MHzICC3 (2)C = 0.1 VCC / 0.9 VCC DO = Open46mA
Current Read Data / Dual Output / Quad Output Read 104MHzIcc3 (2)C = 0.1 VCC / 0.9 VCC DO = Open68mA
Current Write Status RegisterIcc4/CS = VCC1520mA
Current Page ProgramIcc5/CS = VCC1520mA
Current Sector/Block EraseIcc6/CS = VCC1520mA
Current Chip EraseIcc7/CS = VCC1520mA
Input Low VoltageVil-0.5VCC x 0.3V
Input High VoltageVihVCC x 0.7VCC +0.4V
Output Low VoltageVolIol = 100 μA0.2V
Output High VoltageVohIoh = -100 μAVCC - 0.2V
  1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V.
  2. Checker Board Pattern.
  • 52 - -Revision K

W25Q20EW Absolute Maximum Ratings

PARAMETERSSYMBOLCONDITIONSRANGEUNIT
Supply VoltageVCC-0.6 to 2.5VV
Voltage Applied to Any PinVIORelative to Ground-0.6 to VCC+0.4V
Transient Voltage on any PinVIOT<20nS Transient Relative to Ground-2.0V to VCC+2.0VV
Storage TemperatureTSTG-65 to +150° C
Lead TemperatureTLEADSee Note (2)° C
Electrostatic Discharge VoltageVESDHuman Body Model (3)-2000 to +2000V
  1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.

  2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.

  3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
W25Q20EW-IQWinbond—
W25Q20EW-JQWinbond—
W25Q20EWSNIGWinbond8-SOIC (0.154", 3.90mm Width)
W25Q20EWUXIEWinbond—

More datasheets

All Winbond datasheets (73)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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