UCC27517DBV

Part: UCC27516, UCC27517 — Texas Instruments

Type: Single-Channel, High-Speed, Low-Side Gate Driver

Description: The UCC27516 and UCC27517 are single-channel, high-speed, low-side gate drivers offering 4-A peak source and 4-A peak sink symmetrical drive capability, 4.5–18 V single-supply range, and fast propagation delays (13-ns typical).

Operating Conditions:

• Supply voltage: 4.5 to 18 V
• Operating temperature: -40 to 140 °C
• Input voltage: 0 to 18 V

Absolute Maximum Ratings:

• Max supply voltage: 20 V
• Max continuous current: 0.3 A
• Max junction/storage temperature: 150 °C

Key Specs:

• Peak-Source Current: 4 A (at VDD = 12 V)
• Peak-Sink Current: 4 A (at VDD = 12 V)
• Propagation Delay: 13 ns (Typical)
• Rise Time: 9 ns (Typical)
• Fall Time: 7 ns (Typical)
• Startup current (VDD = 3.4 V, IN+ = VDD, IN- = GND): 100 μA (Typical)

Features:

• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
• Fast Propagation Delays (13-ns Typical)
• Fast Rise and Fall Times (9-ns and 7-ns Typical)
• Outputs Held Low During VDD UVLO
• TTL and CMOS Compatible Input-Logic Threshold
• Hysteretic-Logic Thresholds for High-Noise Immunity
• Dual Input Design (Choice of an Inverting or Noninverting Driver Configuration)
• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage

Applications:

• Switched-Mode Power Supplies
• DC-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)

Package:

• SOT-23-5 (UCC27517)
• WSON-6 (UCC27516)

• 1 · Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
• 4-A Peak-Source and 4-A Peak-Sink Symmetrical Drive
• Fast Propagation Delays (13-ns Typical)
• Fast Rise and Fall Times (9-ns and 7-ns Typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (Ensures Glitch-Free Operation at Power Up and Power Down)
• TTL and CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
• Hysteretic-Logic Thresholds for High-Noise Immunity
• Dual Input Design (Choice of an Inverting (INpin) or Noninverting (IN+ Pin) Driver Configuration)
• -Unused Input Pin Can Be Used for Enable or Disable Function
• Output Held Low When Input Pins Are Floating
• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
• Operating Temperature Range of -40°C to 140°C
• 5-Pin DBV (SOT-23) and 6-Pin DRS (3-mm × 3-mm WSON With Exposed Thermal Pad) Package Options

• Switched-Mode Power Supplies
• DC-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)

Table 1. UCC2751x Product Family Summary

VDD = 12 V, TA = TJ = -40°C to 140°C, 1-μF capacitor from VDD to GND. Currents are positive into, negative out of the specified pin.

over operating free-air temperature range (unless otherwise noted)

over operating free-air temperature range (unless otherwise noted)

High-current gate-driver devices are required in switching power applications for a variety of reasons. In order to effect fast switching of power devices and reduce associated switching power losses, a powerful gate driver is employed between the PWM output of controllers and the gates of the power-semiconductor devices. Further, gate drivers are indispensable when there are times that the PWM controller cannot directly drive the gates of the switching devices. With advent of digital power, this situation is often encountered because the PWM signal from the digital controller is often a 3.3-V logic signal, which is not capable of effectively turning on a power switch. A level-shifting circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) in order to fully turn on the power device and minimize conduction losses. Because traditional buffer-drive circuits based on NPN/PNP bipolar transistors in totem-pole arrangement, being emitter-follower configurations, lack level-shifting capability, the circuits prove inadequate with digital power. Gate drivers effectively combine both the level-shifting and buffer-drive functions. Gate drivers also find other needs such as minimizing the effect of highfrequency switching noise by locating the high-current driver physically close to the power switch, driving gatedrive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving gate-charge power losses into itself. Finally, emerging wide-bandgap power-device technologies, such as GaN based switches, which are capable of supporting very high switching frequency operation, are driving very special requirements in terms of gate-drive capability. These requirements include operation at low VDD voltages (5 V or lower), low propagation delays and availability in compact, low-inductance packages with good thermal capability. In summary gate-driver devices are extremely important components in switching power combining benefits of high-performance, low cost, component count and board space reduction with a simplified system design.