UCC27517

Part: UCC27517DBV (UCC27516 / UCC27517 family) — Texas Instruments

Type: Single-Channel, High-Speed, Low-Side Gate Driver

Description: 4.5–18 V single-supply, low-side gate driver with 4-A peak source and 4-A peak sink, 13 ns typical propagation delay, and dual inverting/noninverting inputs for driving MOSFETs, IGBTs and GaN devices.

Operating Conditions:

• Supply voltage (VDD): 4.5–18 V (12 V nominal)
• Operating junction temperature: -40 to 140 °C
• Input voltage, IN+ and IN-: 0 to 18 V

Absolute Maximum Ratings:

• Max supply voltage (VDD): 20 V
• Max output continuous current (source/sink): 0.3 A
• Max output pulsed current (0.5 μs): 4 A
• IN+, IN- voltage: -0.3 to 20 V
• OUT voltage (DC): -0.3 to VDD + 0.3 V
• Max operating virtual junction temperature: 150 °C
• Storage temperature: -65 to 150 °C

Key Specs:

• Peak drive current: 4 A source / 4 A sink (VDD = 12 V)
• Propagation delay: 13 ns typical
• Rise/fall time: 9 ns / 7 ns typical
• Input thresholds: TTL/CMOS compatible, independent of VDD
• UVLO holds output low outside the VDD operating range
• RθJA: 217.6 °C/W (SOT-23, 5 pin); 85.6 °C/W (WSON, 6 pin, UCC27516)
• ESD: HBM ±4000 V, CDM ±1000 V

Features:

• Low-cost replacement for discrete NPN/PNP gate-drive solutions
• Symmetrical 4-A source/sink drive
• Outputs held low during VDD UVLO for glitch-free power up/down
• Hysteretic input logic for high noise immunity
• Dual-input design: inverting (IN-) or noninverting (IN+) configuration
• Unused input can serve as enable/disable
• Output held low when inputs are floating
• Input pin absolute maximum voltage not restricted by VDD

Applications:

• Switched-mode power supplies
• DC-DC converters
• Companion gate drivers for digital-power controllers
• Solar power, motor control, UPS
• Gate driver for wide band-gap devices such as GaN

Package:

• UCC27517: SOT-23 (DBV), 5 pin, 2.90 mm × 1.60 mm
• UCC27516: WSON (DRS), 6 pin, 3.00 mm × 3.00 mm with exposed thermal pad

• 1 · Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
• 4-A Peak-Source and 4-A Peak-Sink Symmetrical Drive
• Switched-Mode Power Supplies
• DC-DC Converters
• Companion Gate-Driver Devices for Digital-Power Controllers
• Fast Propagation Delays (13-ns Typical)
• Fast Rise and Fall Times (9-ns and 7-ns Typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (Ensures Glitch-Free Operation at Power Up and Power Down)
• TTL and CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
• Hysteretic-Logic Thresholds for High-Noise Immunity
• Dual Input Design (Choice of an Inverting (INpin) or Noninverting (IN+ Pin) Driver Configuration)
• -Unused Input Pin Can Be Used for Enable or Disable Function
• Output Held Low When Input Pins Are Floating
• Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
• Operating Temperature Range of -40°C to 140°C
• 5-Pin DBV (SOT-23) and 6-Pin DRS (3-mm × 3-mm WSON With Exposed Thermal Pad) Package Options
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)

Table 1. UCC2751x Product Family Summary

VDD = 12 V, TA = TJ = -40°C to 140°C, 1-μF capacitor from VDD to GND. Currents are positive into, negative out of the specified pin.

over operating free-air temperature range (unless otherwise noted)

over operating free-air temperature range (unless otherwise noted)

High-current gate-driver devices are required in switching power applications for a variety of reasons. In order to effect fast switching of power devices and reduce associated switching power losses, a powerful gate driver is employed between the PWM output of controllers and the gates of the power-semiconductor devices. Further, gate drivers are indispensable when there are times that the PWM controller cannot directly drive the gates of the switching devices. With advent of digital power, this situation is often encountered because the PWM signal from the digital controller is often a 3.3-V logic signal, which is not capable of effectively turning on a power switch. A level-shifting circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) in order to fully turn on the power device and minimize conduction losses. Because traditional buffer-drive circuits based on NPN/PNP bipolar transistors in totem-pole arrangement, being emitter-follower configurations, lack level-shifting capability, the circuits prove inadequate with digital power. Gate drivers effectively combine both the level-shifting and buffer-drive functions. Gate drivers also find other needs such as minimizing the effect of highfrequency switching noise by locating the high-current driver physically close to the power switch, driving gatedrive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving gate-charge power losses into itself. Finally, emerging wide-bandgap power-device technologies, such as GaN based switches, which are capable of supporting very high switching frequency operation, are driving very special requirements in terms of gate-drive capability. These requirements include operation at low VDD voltages (5 V or lower), low propagation delays and availability in compact, low-inductance packages with good thermal capability. In summary gate-driver devices are extremely important components in switching power combining benefits of high-performance, low cost, component count and board space reduction with a simplified system design.