TSL2561CS
REVNO 3:0 Revision number identification
Manufacturer
ams AG
Overview
Part: TSL2560, TSL2561 from Texas Advanced Optoelectronic Solutions Inc.
Type: Light-to-digital converter
Key Specs:
- Digital Output Resolution: 16-Bit
- Dynamic Range: 1,000,000-to-1
- Active Power Consumption: 0.75 mW (Typical)
- SMBus Speed: 100 kHz (TSL2560)
- I2C Fast-Mode Speed: 400 kHz (TSL2561)
- Supply Voltage: 2.7 V to 3.6 V
- Operating Temperature: -30 °C to 70 °C
Features:
- Approximates Human Eye Response
- Programmable Interrupt Function with User-Defined Upper and Lower Threshold Settings
- Programmable Analog Gain and Integration Time
- Automatically Rejects 50/60-Hz Lighting Ripple
- Low Active Power with Power Down Mode
- RoHS Compliant
- Direct I2C (TSL2561) or SMBus (TSL2560) interface
- Combines broadband and infrared photodiodes on a single CMOS integrated circuit
- Double-buffered conversion results
- No external circuitry required for signal conditioning
- Digital output immune to noise
Applications:
- Display panels (LCD, OLED, etc.) for battery life extension and optimum viewing
- Keyboard illumination control
- Exposure control in digital cameras
- Notebook/tablet PCs, LCD monitors, flat-panel televisions, cell phones
- Street light control, security lighting, sunlight harvesting, machine vision, automotive instrumentation clusters
Package:
- Chipscale Package: 1.25 mm - 1.75 mm
- 6-LEAD TMB
Electrical Characteristics
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| I IDD | Active | 0.24 | 0.6 | mA | ||
| Supply current | Power down | 3.2 | 15 | μA | ||
| V VOL | 3 mA sink current | 0 | 0.4 | V | ||
| INT SDA output low voltage INT, output | 6 mA sink current | 0 | 0.6 | V | ||
| I LEAK | Leakage current | -5 | 5 | μA |
TAOS059M - DECEMBER 2008
Absolute Maximum Ratings
| Supply voltage, VDD (see Note 1) . | 3.8 V |
|---|---|
| Digital output voltage range, VO . | -0.5 V to 3.8 V |
| Digital output current, IO . | -1 mA to 20 mA |
| Storage temperature range, Tstg . | -40 °C to 85°C |
| ESD tolerance, human body model . | 2000 V |
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | |
|---|---|---|---|---|
| Supply voltage, VDD | 2.7 | 3 | 3.6 | V |
| Operating free-air temperature, TA | -30 | 70 | °C | |
| SCL, SDA input low voltage, VIL | -0.5 | 0.8 | V | |
| SCL, SDA input high voltage, VIH | 2.1 | 3.6 | V |
Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| I IDD | Active | 0.24 | 0.6 | mA | ||
| Supply current | Power down | 3.2 | 15 | μA | ||
| V VOL | 3 mA sink current | 0 | 0.4 | V | ||
| INT SDA output low voltage INT, output | 6 mA sink current | 0 | 0.6 | V | ||
| I LEAK | Leakage current | -5 | 5 | μA |
TAOS059M - DECEMBER 2008
Operating Characteristics, High Gain (16**-**), VDD = 3 V, TA = 25C, (unless otherwise noted) (see Notes 2, 3, 4, 5)
| TSL2560T, TSL2561T | TSL2560CS, TSL2561CS | ||||||
|---|---|---|---|---|---|---|---|
| PARAMETER | TEST CONDITIONS | CHANNEL | MIN TYP MAX | MIN TYP MAX | |||
| fosc | Oscillator frequency | 690 | 735 | 780 | 690 | ||
| Ch0 | 0 | 4 | 0 | ||||
| Dark ADC count value value | E Ee = 0, Tint = 0 T 402 ms | Ch1 Ch0 | 0 | 4 65535 | 0 | ||
| T int > 178 ms | Ch1 | 65535 | |||||
| Full scale ADC count Full scale ADC | Tint = T 101 ms | Ch0 | 37177 | ||||
| value (Note 6) | Ch1 Ch0 | 37177 5047 | |||||
| T int = 13.7 13 7 ms | Ch1 | 5047 | |||||
| λp = 640 nm, Tint = 101 ms p = 640 = 101 Ee = 36.3 μW/cm2 | Ch0 Ch1 | 750 | 1000 200 | 1250 | |||
| = 101 λp = 940 nm, Tint = 101 ms p = 940 Ee = 119 μW/cm2 | Ch0 Ch1 | 700 | 1000 820 | 1300 | |||
| ADC count value | λp = 640 nm, Tint = 101 ms p = 640 = 101 Ee = 41 μW/cm2 | Ch0 Ch1 | 750 | ||||
| λp = 940 nm, Tint = 101 ms p = 940 = 101 Ee = 135 μW/cm2 | Ch0 Ch1 | 700 | |||||
| ADC ADC count value ratio: ADC count value t l ti | λp = 640 nm, T nm Tint = 101 ms | 0 15. | 0 20. | 0 25 0.25 | 0 14 0.14 | ||
| Ch1/Ch0 | λp = 940 nm, T nm Tint = 101 ms | 0 69. | 0 82. | 0 95 0.95 | 0 70 0.70 | ||
| λ p = 640 nm T nm, Tint = 101 ms | Ch0 | 27.5 | |||||
| Ch1 | 5.5 | ||||||
| R e | Irradiance responsivity | λ p = 940 nm T nm, Tint = 101 ms | Ch0 Ch1 | 8.4 6.9 | |||
| Fluorescent light source: Fluorescent light source: | Ch0 | 36 | |||||
| Tint = 402 ms Incandescent light source: Incandescent light source: Tint = 402 ms | Ch1 | 4 | |||||
| R Rv | Illuminance responsivity Illuminance | Ch0 Ch1 | 144 72 | ||||
| ADC count value ratio: ADC count value | Fluorescent light source: Tint = 402 ms | 0.11 | |||||
| Ch1/Ch0 | Incandescent light source: Incandescent light source: Tint = 402 ms | 0 5 0.5 | |||||
| Ch0 | 2.3 | ||||||
| Illuminance responsivity, Illuminance | Fluorescent light source: Fluorescent light source: Tint = 402 ms | Ch1 | 0.25 | ||||
| R Rv | low gain mode (Note 7) | Incandescent light source: Incandescent light source: Tint = 402 ms | Ch0 Ch1 | 9 4.5 | |||
| (Sensor Lux) / | Fluorescent light source: Tint = 402 ms | 0.65 | 1 | 1.35 | 0.65 | ||
| (actual Lux) high gain Lux), mode (Note 8) | Incandescent light source: Tint = 402 ms | 0.60 | 1 | 1.40 | 0.60 |
TAOS059M - DECEMBER 2008
- NOTES: 2. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs and infrared 940 nm LEDs are used for final product testing for compatibility with high-volume production.
- 3. The 640 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength λp = 640 nm and spectral halfwidth Δλ½ = 17 nm.
-
- The 940 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength λp = 940 nm and spectral halfwidth Δλ½ = 40 nm.
-
- Integration time Tint, is dependent on internal oscillator frequency (fosc) and on the integration field value in the timing register as described in the Register Set section. For nominal fosc = 735 kHz, nominal Tint = (number of clock cycles)/fosc.
Field value 00: Tint = (11 × 918)/fosc = 13.7 ms
Field value 01: Tint = (81 × 918)/fosc = 101 ms
Field value 10: Tint = (322 × 918)/fosc = 402 ms
Scaling between integration times vary proportionally as follows: 11/322 = 0.034 (field value 00), 81/322 = 0.252 (field value 01), and 322/322 = 1 (field value 10).
- Full scale ADC count value is limited by the fact that there is a maximum of one count per two oscillator frequency periods and also by a 2-count offset.
Full scale ADC count value = ((number of clock cycles)/2 - 2)
Field value 00: Full scale ADC count value = ((11 × 918)/2 - 2) = 5047
Field value 01: Full scale ADC count value = ((81 × 918)/2 - 2) = 37177
- Field value 10: Full scale ADC count value = 65535, which is limited by 16 bit register. This full scale ADC count value is reached for 131074 clock cycles, which occurs for Tint = 178 ms for nominal fosc = 735 kHz.
-
- Low gain mode has 16lower gain than high gain mode: (1/16 = 0.0625).
-
- The sensor Lux is calculated using the empirical formula shown on p. 22 of this data sheet based on measured Ch0 and Ch1 ADC count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with fluorescent or incandescent light sources.
TAOS059M - DECEMBER 2008
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