TPS2113ADRB

Part: TPS2112A, TPS2113A from Texas Instruments

Type: Power Multiplexer

Description: The TPS211xA family of power multiplexers enables seamless transition between two power supplies operating at 2.8 V to 5.5 V, delivering up to 2 A depending on the package, and includes extensive protection circuitry.

Operating Conditions:

• Supply voltage: 1.5 V to 5.5 V (for IN1, IN2, EN, VSNS)
• Operating temperature: -40 to 125 °C (junction)
• Current limit adjustment range: 0.31 A to 2 A (depending on part and package)

Absolute Maximum Ratings:

• Max supply voltage: 6 V (at IN1, IN2, EN, VSNS, ILIM pins)
• Max continuous current: 2.5 A (for TPS2113ADRB, T J ≤ 105°C)
• Max junction/storage temperature: Internally Limited

Key Specs:

• Drain-source on-state resistance (TPS2113A): 84 mΩ Typ (T J = 25°C, I L = 500 mA, V I(INx) = 5.0 V)
• Drain-source on-state resistance (TPS2112A): 120 mΩ Typ (T J = 25°C, I L = 500 mA, V I(INx) = 5.0 V)
• Low standby current: 0.5 μA Typ (EN = High, V I(IN1) = 5.5 V, V I(IN2) = 3.3 V)
• Low operating current: 55 μA Typ (V I(VSNS) = 1.5 V, EN = Low, V I(IN1) = 5.5 V, V I(IN2) = 3.3 V)
• Current limit accuracy (TPS2113A): 1.25 A Typ (R ILIM = 400 Ω)
• VSNS threshold voltage (rising edge): 0.80 V Typ
• Thermal shutdown threshold: 135 °C Min
• IN1 and IN2 UVLO (falling edge): 1.25 V Typ

Features:

• Two-Input, One-Output Power Multiplexer
• Reverse and Cross-Conduction Blocking
• Adjustable Current Limit
• Controlled Output Voltage Transition Time
• CMOS- and TTL-Compatible Control Inputs
• Auto-Switching Operating Mode
• Thermal Shutdown

Applications:

• PCs
• PDAs
• Digital Cameras
• Modems
• Cell Phones
• Digital Radios
• MP3 Players

Package:

• TSSOP-8
• SON-8

• 2 · Two-Input, One-Output Power Multiplexer with Low rDS(on) Switches:
• -84 m Ω Typ (TPS2113A)
• -120 m Ω Typ (TPS2112A)
• Reverse and Cross-Conduction Blocking
• Wide Operating Voltage: 2.8 V to 5.5 V
• Low Standby Current: 0.5

μ A Typ

• Low Operating Current: 55 μ

A Typ

• Adjustable Current Limit
• Controlled Output Voltage Transition Time:
• -Limits Inrush Current
• -Minimizes Output Voltage Hold-Up Capacitance
• CMOS- and TTL-Compatible Control Inputs
• Auto-Switching Operating Mode
• Thermal Shutdown
• Available in TSSOP-8 and 3-mm × 3-mm SON-8 Packages

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2 All trademarks are the property of their respective owners.

• PCs
• PDAs
• Digital Cameras
• Modems
• Cell Phones
• Digital Radios
• MP3 Players

Over recommended operating junction temperature, RILIM = 400 Ω , unless otherwise noted.

• TPS2112A TPS2112A TPS2112A TPS2113A TPS2113A TPS2113A
• PARAMETER PARAMETER TEST CONDITIONS TEST CONDITIONS MIN TYP MAX MIN TYP MAX
• Drain-source on-state resistance (INx - OUT) r DS(on) (1) T J = 25°C, I L = 500 mA V I(IN1) = V I(IN2) = 5.0 V 120 140 84 110
• Drain-source on-state resistance (INx - OUT) r DS(on) (1) T J = 25°C, I L = 500 mA V I(IN1) = V I(IN2) = 3.3 V 120 140 84 110
• Drain-source on-state resistance (INx - OUT) r DS(on) (1) T J = 25°C, I L = 500 mA V I(IN1) = V I(IN2) = 2.8 V 120 140 84 110
• Drain-source on-state resistance (INx - OUT) r DS(on) (1) T J = 125°C, I L = 500 mA V I(IN1) = V I(IN2) = 5.0 V 220 150
• Drain-source on-state resistance (INx - OUT) r DS(on) (1) T J = 125°C, I L = 500 mA V I(IN1) = V I(IN2) = 3.3 V 220 150
• Drain-source on-state resistance (INx - OUT) r DS(on) (1) T J = 125°C, I L = 500 mA V I(IN1) = V I(IN2) = 2.8 V 220 150

Over recommended junction temperature range, unless otherwise noted.

SBVS045C -MARCH 2004-REVISED MAY 2012

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.