TPD2E2U06-Q1

ESD Protection Device

The TPD2E2U06-Q1 is a esd protection device from Texas Instruments. View the full TPD2E2U06-Q1 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Overview

Part: TPD2E2U06-Q1, Texas Instruments

Type: Automotive Dual-Channel High-Speed ESD Protection Device

Description: A dual-channel, low-capacitance (1.5 pF typical) ESD protection diode array rated for IEC 61000-4-2 Level 4 (±25 kV contact) and ISO 10605 (±20 kV contact) protection, with a minimum DC breakdown voltage of 6.5 V and ultra-low leakage current of 10 nA maximum.

Operating Conditions:

Input pin voltage: 0–5.5 V
Operating free air temperature: -40 to 125 °C

Absolute Maximum Ratings:

Peak pulse current (t p = 8/20 μs): 5.5 A
Peak pulse power (t p = 8/20 μs): 75 W
Max junction temperature: 125 °C
Max storage temperature: 150 °C

Key Specs:

Reverse stand-off voltage (V RWM): 5.5 V (I IO < 10 μA)
IEC 61000-4-2 ESD protection: ±25 kV (contact), ±30 kV (air-gap)
ISO 10605 ESD protection: ±20 kV (contact), ±25 kV (air-gap)
Line capacitance (C L): 1.5 pF (typ, f = 1 MHz, V BIAS = 2.5 V)
DC breakdown voltage (V BR): 6.5 V (min, I IO = 1 mA)
Leakage current (I LEAK): 10 nA (max, V IO = 2.5 V)
Dynamic resistance (R DYN): 0.6 Ω (typ, IO to GND)
Clamping voltage (V CLAMP): 9.7 V (typ, I PP = 1 A, IO to GND)

Features:

AEC-Q101 qualified
IEC 61000-4-2 Level 4 ESD protection (±25-kV contact, ±30-kV air-gap)
ISO 10605 (330 pF, 330 Ω) ESD protection (±20-kV contact, ±25-kV air-gap)
IO capacitance 1.5-pF (typical)
DC breakdown voltage 6.5 V (minimum)
Ultra-low leakage current 10-nA (maximum)
Low ESD clamping voltage
Industrial temperature range: -40°C to +125°C
Small easy-to-route DBZ and DCK packages

Applications:

Head units
Rear seat entertainment
Telematics
Navigation modules
Media interfaces
USB 2.0
Ethernet
Antenna
LVDS
I2C

Package:

DBZ (SOT23, 3)
DCK (SC70, 3)

Features

AEC-Q101 qualified
IEC 61000-4-2 Level 4 ESD protection
-±25-kV (contact discharge)
-±30-kV (air-gap discharge)
ISO 10605 (330 pF, 330 Ω) ESD protection
-±20-kV (contact discharge)
-±25-kV (air-gap discharge)
IO capacitance 1.5-pF (typical)
DC breakdown voltage 6.5 V (minimum)
Ultra-low leakage current 10-nA (maximum)
Low ESD clamping voltage
Industrial temperature range: -40°C to +125°C
Small easy-to-route DBZ and DCK packages

Applications

Pin Configuration

Figure 5-1. DBZ Package, 3-Pin SOT23 (Top View)

Figure 5-2. DCK Package, 3-Pin SC70 (Top View)

Table 5-1. Pin Functions

PIN	PIN	TYPE (1)	DESCRIPTION
NAME	NO.
IO1	1	I/O	The IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible.
IO2	2	I/O	The IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible.
GND	3	G	The GND (ground) pin is connected to ground.

(1) I = input, O = output, G = ground

Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V RWM	Reverse stand-off voltage	I IO < 10 μA			5.5	V
V CLAMP	IO to GND	I PP = 1 A, TLP (1) (3)		9.7		V
V CLAMP	IO to GND	I PP = 5 A, TLP (1) (3)		12.4		V
V CLAMP	GND to IO	I PP = 1 A, TLP (1) (3)		1.9		V
V CLAMP	GND to IO	I PP = 5 A, TLP (1) (3)		4		V
R DYN	Dynamic resistance	IO to GND (2) (3)		0.6		Ω
R DYN	Dynamic resistance	GND to IO (2) (3)		0.4		Ω
C L	Line capacitance	f = 1 MHz, V BIAS = 2.5 V (3)		1.5	1.9	pF
C CROSS	Channel-to-channel input capacitance	Pin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins (3)		0.02	0.03	pF
∆ CL	Variation of channel input capacitance	Pin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, Pin 1 to GND - Pin 2 to GND (3)		0.03	0.1	pF
V BR	Break-down voltage	I IO = 1 mA (3)	6.5		8.5	V
I LEAK	Leakage current	V IO = 2.5 V		1	10	nA

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

		MIN	MAX	UNIT
I PP	Peak pulse current (t p = 8/20 μs)		5.5 (2)	A
P PP	Peak pulse power (t p = 8/20 μs)		75 (2)	W
T J	Junction temperature	-40	125	°C
T stg	Storage temperature	-65	150	°C

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V IO	Input pin voltage	0	5.5	V
T A	Operating free air temperature	-40	125	°C

Thermal Information

		TPD2E2U06-Q1	TPD2E2U06-Q1
	THERMAL METRIC (1)	DBZ (SOT23)	DCK (SC70)
		3 PINS	3 PINS
R θJA	Junction-to-ambient thermal resistance	439.5	308.3
R θJC(top)	Junction-to-case (top) thermal resistance	194.9	170.7
R θJB	Junction-to-board thermal resistance	173.9	89.2
ψ JT	Junction-to-top characterization parameter	53.7	34.2
ψ JB	Junction-to-board characterization parameter	172	88.6
R θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	N/A

Typical Application

The TPD2E2U06-Q1 device is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

Package Information

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TPD2E2U06-Q1	DBZ (SOT23, 3)	2.92 mm × 1.30 mm
TPD2E2U06-Q1	DCK (SC70, 3)	2.00 mm × 1.25 mm

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
TPD2E2U06	Texas Instruments	—

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