Skip to main content

We use cookies to understand how you use our site and improve your experience. See our Privacy Policy.

TPD2E2U06-Q1

ESD Protection Device

The TPD2E2U06-Q1 is a esd protection device from Texas Instruments. View the full TPD2E2U06-Q1 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TPD2E2U06-Q1 shares its datasheet with TPD2E2U06, whose page lists every part number it covers.

Official TPD2E2U06-Q1 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

ESD Protection Device

TPD2E2U06-Q1 Key Specifications

ParameterValue
Reverse stand-off voltage (V_RWM)5.5 V max at I_IO < 10 μA
Breakdown voltage (V_BR)6.5 V min, 8.5 V max at I_IO = 1 mA
Line capacitance (C_L)1.5 pF typ, 1.9 pF max (f = 1 MHz, V_BIAS = 2.5 V)
Channel-to-channel capacitance0.02 pF typ, 0.03 pF max
Leakage current1 nA typ, 10 nA max at V_IO = 2.5 V
Clamping voltage IO to GND (TLP)9.7 V typ at 1 A; 12.4 V typ at 5 A
Dynamic resistance0.6 Ω typ (IO to GND), 0.4 Ω typ (GND to IO)
ESD ratingsHBM ±10 kV, CDM ±1 kV (AEC); ISO 10605 (330 pF, 330 Ω) ±20 kV contact / ±25 kV air

TPD2E2U06-Q1 Overview

Part: TPD2E2U06-Q1 — Texas Instruments

Type: Automotive Dual-Channel TVS ESD Protection Diode Array

Description: Dual-channel, low-capacitance (1.5 pF typ) automotive ESD protection diode array with 5.5 V reverse stand-off voltage, ±25 kV contact / ±30 kV air-gap IEC 61000-4-2 protection, and AEC-Q101 qualification.

Operating Conditions:

  • Supply voltage: not applicable (passive protection device)
  • Input pin voltage (V_IO): 0–5.5 V
  • Operating temperature: -40 to 125 °C

Absolute Maximum Ratings:

  • Peak pulse current (tp = 8/20 μs): 5.5 A
  • Peak pulse power (tp = 8/20 μs): 75 W
  • Junction temperature: -40 to 125 °C
  • Storage temperature: -65 to 150 °C

Key Specs:

  • Reverse stand-off voltage (V_RWM): 5.5 V max at I_IO < 10 μA
  • Breakdown voltage (V_BR): 6.5 V min, 8.5 V max at I_IO = 1 mA
  • Line capacitance (C_L): 1.5 pF typ, 1.9 pF max (f = 1 MHz, V_BIAS = 2.5 V)
  • Channel-to-channel capacitance: 0.02 pF typ, 0.03 pF max
  • Leakage current: 1 nA typ, 10 nA max at V_IO = 2.5 V
  • Clamping voltage IO to GND (TLP): 9.7 V typ at 1 A; 12.4 V typ at 5 A
  • Dynamic resistance: 0.6 Ω typ (IO to GND), 0.4 Ω typ (GND to IO)
  • ESD ratings: HBM ±10 kV, CDM ±1 kV (AEC); ISO 10605 (330 pF, 330 Ω) ±20 kV contact / ±25 kV air

Features:

  • AEC-Q101 qualified
  • IEC 61000-4-2 Level 4: ±25 kV contact, ±30 kV air-gap
  • ISO 10605 ESD protection: ±20 kV contact, ±25 kV air-gap
  • Supports data rates in excess of 1.5 Gbps
  • Low ESD clamping voltage
  • Small, easy-to-route flow-through DBZ and DCK packages

Applications:

  • Head units
  • Rear seat entertainment
  • Telematics
  • Navigation modules
  • Media interfaces
  • USB 2.0, Ethernet, antenna, LVDS and I²C interfaces

Package:

  • DBZ (SOT23, 3 pins), 2.92 mm × 1.30 mm
  • DCK (SC70, 3 pins), 2.00 mm × 1.25 mm

TPD2E2U06-Q1 Features

  • AEC-Q101 qualified
  • IEC 61000-4-2 Level 4 ESD protection
  • -±25-kV (contact discharge)
  • -±30-kV (air-gap discharge)
  • ISO 10605 (330 pF, 330 Ω) ESD protection
  • -±20-kV (contact discharge)
  • -±25-kV (air-gap discharge)
  • IO capacitance 1.5-pF (typical)
  • DC breakdown voltage 6.5 V (minimum)
  • Ultra-low leakage current 10-nA (maximum)
  • Low ESD clamping voltage
  • Industrial temperature range: -40°C to +125°C
  • Small easy-to-route DBZ and DCK packages

TPD2E2U06-Q1 Applications

TPD2E2U06-Q1 Pin Configuration

Figure 5-1. DBZ Package, 3-Pin SOT23 (Top View)

Figure 5-2. DCK Package, 3-Pin SC70 (Top View)

Table 5-1. Pin Functions

PIN - NAMEPIN - NO.TYPE (1)DESCRIPTION
IO11I/OThe IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible.
IO22I/OThe IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible.
GND3GThe GND (ground) pin is connected to ground.
  • (1) I = input, O = output, G = ground

TPD2E2U06-Q1 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERPARAMETERTEST CONDITIONSMINTYPMAXUNIT
V RWMReverse stand-off voltageI IO < 10 μA5.5V
V CLAMPIO to GNDI PP = 1 A, TLP (1) (3)9.7V
V CLAMPIO to GNDI PP = 5 A, TLP (1) (3)12.4V
V CLAMPGND to IOI PP = 1 A, TLP (1) (3)1.9V
V CLAMPGND to IOI PP = 5 A, TLP (1) (3)4V
R DYNDynamic resistanceIO to GND (2) (3)0.6Ω
R DYNDynamic resistanceGND to IO (2) (3)0.4Ω
C LLine capacitancef = 1 MHz, V BIAS = 2.5 V (3)1.51.9pF
C CROSSChannel-to-channel input capacitancePin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins (3)0.020.03pF
∆ CLVariation of channel input capacitancePin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, Pin 1 to GND - Pin 2 to GND (3)0.030.1pF
V BRBreak-down voltageI IO = 1 mA (3)6.58.5V
I LEAKLeakage currentV IO = 2.5 V110nA

TPD2E2U06-Q1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
I PPPeak pulse current (t p = 8/20 μs)5.5 (2)A
P PPPeak pulse power (t p = 8/20 μs)75 (2)W
T JJunction temperature-40125°C
T stgStorage temperature-65150°C

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
V IOInput pin voltage05.5V
T AOperating free air temperature-40125°C

TPD2E2U06-Q1 Thermal Information

THERMAL METRIC (1)TPD2E2U06-Q1 - DBZ (SOT23) - 3 PINSTPD2E2U06-Q1 - DCK (SC70) - 3 PINSUNIT
R θJAJunction-to-ambient thermal resistance439.5308.3°C/W
R θJC(top)Junction-to-case (top) thermal resistance194.9170.7°C/W
R θJBJunction-to-board thermal resistance173.989.2°C/W
ψ JTJunction-to-top characterization parameter53.734.2°C/W
ψ JBJunction-to-board characterization parameter17288.6°C/W
R θJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/A°C/W

TPD2E2U06-Q1 Typical Application

The TPD2E2U06-Q1 device is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

TPD2E2U06-Q1 Package Information

PART NUMBERPACKAGEBODY SIZE (NOM)
TPD2E2U06-Q1DBZ (SOT23, 3)2.92 mm × 1.30 mm
TPD2E2U06-Q1DCK (SC70, 3)2.00 mm × 1.25 mm
  • (1) For all available packages, see the orderable addendum at the end of the data sheet.

Copyright © 2016, Texas Instruments Incorporated

More datasheets

All Texas Instruments datasheets (2,418)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the TPD2E2U06-Q1

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the TPD2E2U06-Q1 run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.