TPD2E2U06-Q1
ESD Protection DeviceThe TPD2E2U06-Q1 is a esd protection device from Texas Instruments. View the full TPD2E2U06-Q1 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
TPD2E2U06-Q1 shares its datasheet with TPD2E2U06, whose page lists every part number it covers.
Official TPD2E2U06-Q1 datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
ESD Protection Device
TPD2E2U06-Q1 Key Specifications
| Parameter | Value |
|---|---|
| Reverse stand-off voltage (V_RWM) | 5.5 V max at I_IO < 10 μA |
| Breakdown voltage (V_BR) | 6.5 V min, 8.5 V max at I_IO = 1 mA |
| Line capacitance (C_L) | 1.5 pF typ, 1.9 pF max (f = 1 MHz, V_BIAS = 2.5 V) |
| Channel-to-channel capacitance | 0.02 pF typ, 0.03 pF max |
| Leakage current | 1 nA typ, 10 nA max at V_IO = 2.5 V |
| Clamping voltage IO to GND (TLP) | 9.7 V typ at 1 A; 12.4 V typ at 5 A |
| Dynamic resistance | 0.6 Ω typ (IO to GND), 0.4 Ω typ (GND to IO) |
| ESD ratings | HBM ±10 kV, CDM ±1 kV (AEC); ISO 10605 (330 pF, 330 Ω) ±20 kV contact / ±25 kV air |
TPD2E2U06-Q1 Overview
Part: TPD2E2U06-Q1 — Texas Instruments
Type: Automotive Dual-Channel TVS ESD Protection Diode Array
Description: Dual-channel, low-capacitance (1.5 pF typ) automotive ESD protection diode array with 5.5 V reverse stand-off voltage, ±25 kV contact / ±30 kV air-gap IEC 61000-4-2 protection, and AEC-Q101 qualification.
Operating Conditions:
- Supply voltage: not applicable (passive protection device)
- Input pin voltage (V_IO): 0–5.5 V
- Operating temperature: -40 to 125 °C
Absolute Maximum Ratings:
- Peak pulse current (tp = 8/20 μs): 5.5 A
- Peak pulse power (tp = 8/20 μs): 75 W
- Junction temperature: -40 to 125 °C
- Storage temperature: -65 to 150 °C
Key Specs:
- Reverse stand-off voltage (V_RWM): 5.5 V max at I_IO < 10 μA
- Breakdown voltage (V_BR): 6.5 V min, 8.5 V max at I_IO = 1 mA
- Line capacitance (C_L): 1.5 pF typ, 1.9 pF max (f = 1 MHz, V_BIAS = 2.5 V)
- Channel-to-channel capacitance: 0.02 pF typ, 0.03 pF max
- Leakage current: 1 nA typ, 10 nA max at V_IO = 2.5 V
- Clamping voltage IO to GND (TLP): 9.7 V typ at 1 A; 12.4 V typ at 5 A
- Dynamic resistance: 0.6 Ω typ (IO to GND), 0.4 Ω typ (GND to IO)
- ESD ratings: HBM ±10 kV, CDM ±1 kV (AEC); ISO 10605 (330 pF, 330 Ω) ±20 kV contact / ±25 kV air
Features:
- AEC-Q101 qualified
- IEC 61000-4-2 Level 4: ±25 kV contact, ±30 kV air-gap
- ISO 10605 ESD protection: ±20 kV contact, ±25 kV air-gap
- Supports data rates in excess of 1.5 Gbps
- Low ESD clamping voltage
- Small, easy-to-route flow-through DBZ and DCK packages
Applications:
- Head units
- Rear seat entertainment
- Telematics
- Navigation modules
- Media interfaces
- USB 2.0, Ethernet, antenna, LVDS and I²C interfaces
Package:
- DBZ (SOT23, 3 pins), 2.92 mm × 1.30 mm
- DCK (SC70, 3 pins), 2.00 mm × 1.25 mm
TPD2E2U06-Q1 Features
- AEC-Q101 qualified
- IEC 61000-4-2 Level 4 ESD protection
- -±25-kV (contact discharge)
- -±30-kV (air-gap discharge)
- ISO 10605 (330 pF, 330 Ω) ESD protection
- -±20-kV (contact discharge)
- -±25-kV (air-gap discharge)
- IO capacitance 1.5-pF (typical)
- DC breakdown voltage 6.5 V (minimum)
- Ultra-low leakage current 10-nA (maximum)
- Low ESD clamping voltage
- Industrial temperature range: -40°C to +125°C
- Small easy-to-route DBZ and DCK packages
TPD2E2U06-Q1 Applications
- End equipment:
- -Head units
- -Rear seat entertainment
- -Telematics
- -Navigation modules
- -Media interfaces
- Interfaces:
- -USB 2.0
- -Ethernet ™
- -Antenna
- -LVDS
- -I 2 C
TPD2E2U06-Q1 Pin Configuration
Figure 5-1. DBZ Package, 3-Pin SOT23 (Top View)
Figure 5-2. DCK Package, 3-Pin SC70 (Top View)
Table 5-1. Pin Functions
| PIN - NAME | PIN - NO. | TYPE (1) | DESCRIPTION |
|---|---|---|---|
| IO1 | 1 | I/O | The IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible. |
| IO2 | 2 | I/O | The IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible. |
| GND | 3 | G | The GND (ground) pin is connected to ground. |
- (1) I = input, O = output, G = ground
TPD2E2U06-Q1 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| V RWM | Reverse stand-off voltage | I IO < 10 μA | 5.5 | V | ||
| V CLAMP | IO to GND | I PP = 1 A, TLP (1) (3) | 9.7 | V | ||
| V CLAMP | IO to GND | I PP = 5 A, TLP (1) (3) | 12.4 | V | ||
| V CLAMP | GND to IO | I PP = 1 A, TLP (1) (3) | 1.9 | V | ||
| V CLAMP | GND to IO | I PP = 5 A, TLP (1) (3) | 4 | V | ||
| R DYN | Dynamic resistance | IO to GND (2) (3) | 0.6 | Ω | ||
| R DYN | Dynamic resistance | GND to IO (2) (3) | 0.4 | Ω | ||
| C L | Line capacitance | f = 1 MHz, V BIAS = 2.5 V (3) | 1.5 | 1.9 | pF | |
| C CROSS | Channel-to-channel input capacitance | Pin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins (3) | 0.02 | 0.03 | pF | |
| ∆ CL | Variation of channel input capacitance | Pin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, Pin 1 to GND - Pin 2 to GND (3) | 0.03 | 0.1 | pF | |
| V BR | Break-down voltage | I IO = 1 mA (3) | 6.5 | 8.5 | V | |
| I LEAK | Leakage current | V IO = 2.5 V | 1 | 10 | nA |
TPD2E2U06-Q1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| I PP | Peak pulse current (t p = 8/20 μs) | 5.5 (2) | A | |
| P PP | Peak pulse power (t p = 8/20 μs) | 75 (2) | W | |
| T J | Junction temperature | -40 | 125 | °C |
| T stg | Storage temperature | -65 | 150 | °C |
TPD2E2U06-Q1 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| V IO | Input pin voltage | 0 | 5.5 | V |
| T A | Operating free air temperature | -40 | 125 | °C |
TPD2E2U06-Q1 Thermal Information
| THERMAL METRIC (1) | TPD2E2U06-Q1 - DBZ (SOT23) - 3 PINS | TPD2E2U06-Q1 - DCK (SC70) - 3 PINS | UNIT | |
|---|---|---|---|---|
| R θJA | Junction-to-ambient thermal resistance | 439.5 | 308.3 | °C/W |
| R θJC(top) | Junction-to-case (top) thermal resistance | 194.9 | 170.7 | °C/W |
| R θJB | Junction-to-board thermal resistance | 173.9 | 89.2 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 53.7 | 34.2 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 172 | 88.6 | °C/W |
| R θJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
TPD2E2U06-Q1 Typical Application
The TPD2E2U06-Q1 device is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
TPD2E2U06-Q1 Package Information
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| TPD2E2U06-Q1 | DBZ (SOT23, 3) | 2.92 mm × 1.30 mm |
| TPD2E2U06-Q1 | DCK (SC70, 3) | 2.00 mm × 1.25 mm |
- (1) For all available packages, see the orderable addendum at the end of the data sheet.
Copyright © 2016, Texas Instruments Incorporated
More datasheets
Ask your AI agent about the TPD2E2U06-Q1
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the TPD2E2U06-Q1 run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.