TPD2E2U06

TPD2E2U06-Q1 Automotive Dual-Channel High-Speed ESD Protection Device [SLLSEJ9E](https://www.ti.com/lit/pdf/SLLSEJ9) – DECEMBER 2014 – REVISED OCTOBER 2022

Manufacturer

unknown

Overview

Part: TPD2E2U06-Q1 from Texas Instruments

Type: Automotive Dual-Channel High-Speed ESD Protection Device

Key Specs:

  • ESD Protection (IEC 61000-4-2): ±25-kV (contact), ±30-kV (air-gap)
  • ESD Protection (ISO 10605): ±20-kV (contact), ±25-kV (air-gap)
  • IO capacitance: 1.5-pF (typical)
  • DC breakdown voltage: 6.5 V (minimum)
  • Leakage current: 10-nA (maximum)
  • Operating temperature range: –40°C to +125°C
  • Peak pulse current (8/20 μs): 5.5 A (maximum)
  • Peak pulse power (8/20 μs): 75 W (maximum)

Features:

  • AEC-Q101 qualified
  • IEC 61000-4-2 Level 4 ESD protection
  • ISO 10605 (330 pF, 330 Ω) ESD protection
  • Low ESD clamping voltage
  • Small easy-to-route DBZ and DCK packages

Applications:

  • Head units
  • Rear seat entertainment
  • Telematics
  • Navigation modules
  • Media interfaces
  • USB 2.0
  • Ethernet™
  • Antenna
  • LVDS
  • I 2C

Package:

  • DBZ (SOT23, 3): 2.92 mm × 1.30 mm
  • DCK (SC70, 3): 2.00 mm × 1.25 mm

Features

  • AEC-Q101 qualified
  • IEC 61000-4-2 Level 4 ESD protection
    • ±25-kV (contact discharge)
    • ±30-kV (air-gap discharge)
  • ISO 10605 (330 pF, 330 Ω) ESD protection
    • ±20-kV (contact discharge)
    • ±25-kV (air-gap discharge)
  • IO capacitance 1.5-pF (typical)
  • DC breakdown voltage 6.5 V (minimum)
  • Ultra-low leakage current 10-nA (maximum)
  • Low ESD clamping voltage
  • Industrial temperature range: –40°C to +125°C
  • Small easy-to-route DBZ and DCK packages

Applications

3 Description

The TPD2E2U06-Q1 is a Transient Voltage Suppressor (TVS) Electrostatic Discharge (ESD) protection diode array with low capacitance. This dual-channel ESD protection diode is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard. The 1.5-pF line capacitance of the TPD2E2U06-Q1 makes it ideal for protecting interfaces such as USB 2.0, Ethernet, LVDS, antenna, and I2C.

Package Information(1)

PART NUMBERPACKAGEBODY SIZE (NOM)
TPD2E2U06-Q1DBZ (SOT23, 3)2.92 mm × 1.30 mm
DCK (SC70, 3)2.00 mm × 1.25 mm

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

Table of Contents

1 Features17.4 Device Functional Modes9
2 Applications18 Application and Implementation10
3 Description18.1 Application Information 10
4 Revision History 28.2 Typical Application 10
5 Pin Configuration and Functions39 Power Supply Recommendations11
6 Specifications 410 Layout12
6.1 Absolute Maximum Ratings 410.1 Layout Guidelines 12
6.2 ESD Ratings—AEC Specification410.2 Layout Example 12
6.3 ESD Ratings—IEC Specification 411 Device and Documentation Support13
6.4 ESD Ratings—ISO Specification 411.1 Documentation Support 13
6.5 Recommended Operating Conditions411.2 Receiving Notification of Documentation Updates 13
6.6 Thermal Information511.3 Support Resources 13
6.7 Electrical Characteristics511.4 Trademarks 13
6.8 Typical Characteristics611.5 Electrostatic Discharge Caution 13
7 Detailed Description811.6 Glossary 13
7.1 Overview812 Mechanical, Packaging, and Orderable
7.2 Functional Block Diagram8Information 13
7.3 Feature Description8
Changes from Revision D (May 2016) to Revision E (October 2022)Page
------------------------------------------------------------------------------------------------------------

Updated the numbering format for tables, figures, and cross-references throughout the document1

Updated the Surge Curve (tp = 8/20 μs) IO to GND figure
6
Changes from Revision C (March 2016) to Revision D (May 2016)Page

Updated Features, Applications, and Description
1

Updated the ESD Ratings—AEC Specification table
1
Changes from Revision B (December 2014) to Revision C (March 2016)Page

Added DCK package1

Added DCK thermal data in the Thermal Information table1
Changes from Revision A (December 2014) to Revision B (December 2014)Page

Added temperature specification to VBR TEST CONDITIONS
5
Changes from Revision * (December 2014) to Revision A (December 2014)Page

Initial release of full document1
Product Folder Links: TPD2E2U06-Q1

Pin Configuration

Figure 5-1. DBZ Package, 3-Pin SOT23 (Top View)

Figure 5-2. DCK Package, 3-Pin SC70 (Top View)

Table 5-1. Pin Functions

PINTYPE(1)
NAMENO.
IO11I/O
IO22I/O
GND3G

(1) I = input, O = output, G = ground

Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltageIIO < 10 μA5.5V
IPP = 1 A, TLP(1) (3)9.7
VCLAMP
IO to GND
IPP = 5 A, TLP(1) (3)12.4V
IPP = 1 A, TLP(1) (3)1.9
VCLAMPGND to IOIPP = 5 A, TLP(1) (3)4V
IO to GND(2) (3)0.6
RDYNDynamic resistanceGND to IO(2) (3)0.4Ω
CLLine capacitancef = 1 MHz, VBIAS = 2.5 V(3)1.51.9pF
CCROSSChannel-to-channel input
capacitance
Pin 3 = 0 V, f = 1 MHz, VBIAS = 2.5 V, between
channel pins(3)
0.020.03pF
∆CLVariation of channel input
capacitance
Pin 3 = 0 V, f = 1 MHz, VBIAS = 2.5 V,
Pin 1 to GND – Pin 2 to GND(3)
0.030.1pF
VBRBreak-down voltageIIO = 1 mA(3)6.58.5V
ILEAKLeakage currentVIO = 2.5 V110nA

(1) Transmission Line Pulse with 10-ns rise time, 100-ns width.

(2) Extraction of RDYN Using least squares fit of TLP characteristics between I = 20 A and I = 30 A.

(3) Measured at 25°C.

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MINMAXUNIT
IPPPeak pulse current (tp = 8/20 μs)5.5(2)A
PPPPeak pulse power (tp = 8/20 μs)75(2)W
TJJunction temperature–40125°C
TstgStorage temperature–65150°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
VIOInput pin voltage05.5V
TAOperating free air temperature–40125°C

Product Folder Links: TPD2E2U06-Q1

(2) Measured at 25°C.

6.6 Thermal Information

TPD2E2U06-Q1
THERMAL METRIC(1)DBZ (SOT23)
3 PINS
RθJAJunction-to-ambient thermal resistance439.5
RθJC(top)Junction-to-case (top) thermal resistance194.9
RθJBJunction-to-board thermal resistance173.9
ψJTJunction-to-top characterization parameter53.7
ψJBJunction-to-board characterization parameter172
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

Thermal Information

TPD2E2U06-Q1
THERMAL METRIC(1)DBZ (SOT23)
3 PINS
RθJAJunction-to-ambient thermal resistance439.5
RθJC(top)Junction-to-case (top) thermal resistance194.9
RθJBJunction-to-board thermal resistance173.9
ψJTJunction-to-top characterization parameter53.7
ψJBJunction-to-board characterization parameter172
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free