TPD2E2U06

ESD Protection Device

The TPD2E2U06 is a esd protection device from Texas Instruments. View the full TPD2E2U06 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official TPD2E2U06 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

TPD2E2U06 Key Specifications

Parameter	Value
Qualification	AEC-Q101
Package Options	DBZ (SOT-23-3, 2.92 mm × 1.30 mm), DCK (SC70-3, 2.00 mm × 1.25 mm)
Number Of Channels	2
IO Capacitance (Typical)	1.5 pF
Leakage Current (Maximum)	10 nA
Operating Temperature Range	-40°C to +125°C
DC Breakdown Voltage (Minimum)	6.5 V
ESD Protection (IEC 61000-4-2 Air-Gap)	±30 kV
ESD Protection (IEC 61000-4-2 Contact)	±25 kV
ESD Protection (ISO 10605, 330 PF/330 Ω Air-Gap)	±25 kV
ESD Protection (ISO 10605, 330 PF/330 Ω Contact)	±20 kV

TPD2E2U06 Overview

Part: TPD2E2U06-Q1 — Texas Instruments

Type: Automotive Dual-Channel TVS ESD Protection Diode Array

Description: Dual-channel, low-capacitance (1.5 pF typ) automotive ESD protection diode array with 5.5 V reverse stand-off voltage, ±25 kV contact / ±30 kV air-gap IEC 61000-4-2 protection, and AEC-Q101 qualification.

Operating Conditions:

Supply voltage: not applicable (passive protection device)
Input pin voltage (V_IO): 0–5.5 V
Operating temperature: -40 to 125 °C

Absolute Maximum Ratings:

Peak pulse current (tp = 8/20 μs): 5.5 A
Peak pulse power (tp = 8/20 μs): 75 W
Junction temperature: -40 to 125 °C
Storage temperature: -65 to 150 °C

Key Specs:

Reverse stand-off voltage (V_RWM): 5.5 V max at I_IO < 10 μA
Breakdown voltage (V_BR): 6.5 V min, 8.5 V max at I_IO = 1 mA
Line capacitance (C_L): 1.5 pF typ, 1.9 pF max (f = 1 MHz, V_BIAS = 2.5 V)
Channel-to-channel capacitance: 0.02 pF typ, 0.03 pF max
Leakage current: 1 nA typ, 10 nA max at V_IO = 2.5 V
Clamping voltage IO to GND (TLP): 9.7 V typ at 1 A; 12.4 V typ at 5 A
Dynamic resistance: 0.6 Ω typ (IO to GND), 0.4 Ω typ (GND to IO)
ESD ratings: HBM ±10 kV, CDM ±1 kV (AEC); ISO 10605 (330 pF, 330 Ω) ±20 kV contact / ±25 kV air

Features:

AEC-Q101 qualified
IEC 61000-4-2 Level 4: ±25 kV contact, ±30 kV air-gap
ISO 10605 ESD protection: ±20 kV contact, ±25 kV air-gap
Supports data rates in excess of 1.5 Gbps
Low ESD clamping voltage
Small, easy-to-route flow-through DBZ and DCK packages

Applications:

Head units
Rear seat entertainment
Telematics
Navigation modules
Media interfaces
USB 2.0, Ethernet, antenna, LVDS and I²C interfaces

Package:

DBZ (SOT23, 3 pins), 2.92 mm × 1.30 mm
DCK (SC70, 3 pins), 2.00 mm × 1.25 mm

TPD2E2U06 Features

AEC-Q101 qualified
IEC 61000-4-2 Level 4 ESD protection
-±25-kV (contact discharge)
-±30-kV (air-gap discharge)
ISO 10605 (330 pF, 330 Ω) ESD protection
-±20-kV (contact discharge)
-±25-kV (air-gap discharge)
IO capacitance 1.5-pF (typical)
DC breakdown voltage 6.5 V (minimum)
Ultra-low leakage current 10-nA (maximum)
Low ESD clamping voltage
Industrial temperature range: -40°C to +125°C
Small easy-to-route DBZ and DCK packages

TPD2E2U06 Applications

TPD2E2U06 Pin Configuration

Figure 5-1. DBZ Package, 3-Pin SOT23 (Top View)

Figure 5-2. DCK Package, 3-Pin SC70 (Top View)

Table 5-1. Pin Functions

PIN - NAME	PIN - NO.	TYPE (1)	DESCRIPTION
IO1	1	I/O	The IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible.
IO2	2	I/O	The IO1 and IO2 pins are an ESD protected channel. Connect these pins to the data line as close to the connector as possible.
GND	3	G	The GND (ground) pin is connected to ground.

(1) I = input, O = output, G = ground

TPD2E2U06 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
V RWM	Reverse stand-off voltage	I IO < 10 μA			5.5	V
V CLAMP	IO to GND	I PP = 1 A, TLP (1) (3)		9.7		V
V CLAMP	IO to GND	I PP = 5 A, TLP (1) (3)		12.4		V
V CLAMP	GND to IO	I PP = 1 A, TLP (1) (3)		1.9		V
V CLAMP	GND to IO	I PP = 5 A, TLP (1) (3)		4		V
R DYN	Dynamic resistance	IO to GND (2) (3)		0.6		Ω
R DYN	Dynamic resistance	GND to IO (2) (3)		0.4		Ω
C L	Line capacitance	f = 1 MHz, V BIAS = 2.5 V (3)		1.5	1.9	pF
C CROSS	Channel-to-channel input capacitance	Pin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, between channel pins (3)		0.02	0.03	pF
∆ CL	Variation of channel input capacitance	Pin 3 = 0 V, f = 1 MHz, V BIAS = 2.5 V, Pin 1 to GND - Pin 2 to GND (3)		0.03	0.1	pF
V BR	Break-down voltage	I IO = 1 mA (3)	6.5		8.5	V
I LEAK	Leakage current	V IO = 2.5 V		1	10	nA

TPD2E2U06 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

		MIN	MAX	UNIT
I PP	Peak pulse current (t p = 8/20 μs)		5.5 (2)	A
P PP	Peak pulse power (t p = 8/20 μs)		75 (2)	W
T J	Junction temperature	-40	125	°C
T stg	Storage temperature	-65	150	°C

TPD2E2U06 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V IO	Input pin voltage	0	5.5	V
T A	Operating free air temperature	-40	125	°C

TPD2E2U06 Thermal Information

	THERMAL METRIC (1)	TPD2E2U06-Q1 - DBZ (SOT23) - 3 PINS	TPD2E2U06-Q1 - DCK (SC70) - 3 PINS	UNIT
R θJA	Junction-to-ambient thermal resistance	439.5	308.3	°C/W
R θJC(top)	Junction-to-case (top) thermal resistance	194.9	170.7	°C/W
R θJB	Junction-to-board thermal resistance	173.9	89.2	°C/W
ψ JT	Junction-to-top characterization parameter	53.7	34.2	°C/W
ψ JB	Junction-to-board characterization parameter	172	88.6	°C/W
R θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	N/A	°C/W

TPD2E2U06 Typical Application

The TPD2E2U06-Q1 device is a diode type TVS which is typically used to provide a path to ground for dissipating ESD events on hi-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

TPD2E2U06 Package Information

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TPD2E2U06-Q1	DBZ (SOT23, 3)	2.92 mm × 1.30 mm
TPD2E2U06-Q1	DCK (SC70, 3)	2.00 mm × 1.25 mm

(1) For all available packages, see the orderable addendum at the end of the data sheet.

More part numbers on this datasheet

Their pages show this same datasheet. Some are linked through their part family rather than checked part by part, so confirm the exact part in the ordering information.

TPD2E2U06-Q1

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ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
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BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)

All Diodes datasheets All Texas Instruments datasheets (2,442)

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