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TPA2016D2QFN

Stereo Class-D Audio Amplifier

The TPA2016D2QFN is a stereo class-d audio amplifier from Texas Instruments. View the full TPA2016D2QFN datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

Stereo Class-D Audio Amplifier

Overview

Part: TPA2016D2 — Texas Instruments

Type: Stereo Class-D Audio Amplifier

Description: A stereo, filter-free Class-D audio power amplifier with a 2.5 V to 5.5 V supply range, capable of driving 2.8 W/Ch into 4 Ω at 5 V or 1.7 W/Ch into 8 Ω at 5 V, featuring programmable Dynamic Range Compression (DRC) and Automatic Gain Control (AGC) via I2C.

Operating Conditions:

  • Supply voltage: 2.5 V to 5.5 V
  • Operating temperature: -40 to 85 °C
  • Minimum load resistance: 3.2 Ω

Absolute Maximum Ratings:

  • Max supply voltage: 6 V
  • Max junction temperature: 150 °C
  • Max storage temperature: 150 °C

Key Specs:

  • Supply current (I_DD): 3.7 mA (Typ, VDD = 3.6 V)
  • Shutdown quiescent current (I_SDZ): 0.2 μA (Typ, VDD = 3.6 V)
  • Class D Switching Frequency (f_SW): 300 kHz (Typ)
  • Start-up time (t_START): 5 ms (Typ)
  • Output offset voltage (V_oo): 2 mV (Typ, VDD = 3.6 V)
  • Power supply rejection ratio (PSRR): -80 dB (Typ, VDD = 2.5 V to 4.7 V)
  • Maximum output power (Po max): 2.8 W (Typ, THD+N = 10%, VDD = 5 V, RL = 4 Ω)
  • Efficiency (η): 90% (Typ, THD+N = 1%, VDD = 3.6 V, RL = 8 Ω, PO = 0.63W)

Features:

  • Filter-Free Class-D Architecture
  • Power Supply Range: 2.5 V to 5.5 V
  • Flexible Operation With or Without I2C
  • Programmable DRC and AGC Parameters
  • Digital I2C Volume Control
  • Selectable Gain from -28 dB to 30 dB in 1-dB Steps
  • Low Supply Current: 3.5 mA
  • Low Shutdown Current: 0.2 μA
  • High PSRR: 80 dB
  • Fast Start-Up Time: 5 ms
  • Short-Circuit and Thermal Protection

Applications:

  • Wireless or Cellular Handsets and PDAs
  • Portable Navigation Devices
  • Portable DVD Players
  • Notebook PCs
  • Portable Radios
  • Portable Games
  • Educational Toys
  • USB Speakers

Package:

  • DSBGA (16) - 2.20 mm × 2.20 mm
  • QFN (20) - 4.00 mm × 4.00 mm

Features

  • 1 · Filter-Free Class-D Architecture
  • 1.7 W/Ch Into 8 Ω at 5 V (10% THD+N)
  • 750 mW/Ch Into 8 Ω at 3.6 V (10% THD+N)
  • 2.8 W/Ch Into 4 Ω at 5 V (10% THD+N)
  • 1.5 W/Ch Into 4 Ω at 3.6 V (10% THD+N)
  • Power Supply Range: 2.5 V to 5.5 V
  • Flexible Operation With or Without I 2 C
  • Programmable DRC and AGC Parameters
  • Digital I 2 C Volume Control
  • Selectable Gain from -28 dB to 30 dB in 1-dB Steps (When Compression is Used)
  • Selectable Attack, Release, and Hold Times
  • 4 Selectable Compression Ratios
  • Low Supply Current: 3.5 mA
  • Low Shutdown Current: 0.2 μ A
  • High PSRR: 80 dB
  • Fast Start-Up Time: 5 ms
  • AGC Enable or Disable Function
  • Limiter Enable or Disable Function
  • Short-Circuit and Thermal Protection
  • Space-Saving Package
  • -2.2 mm × 2.2 mm Nano-Free™ DSBGA (YZH)

Applications

  • Wireless or Cellular Handsets and PDAs
  • Portable Navigation Devices
  • Portable DVD Players
  • Notebook PCs
  • Portable Radios
  • Portable Games
  • Educational Toys
  • USB Speakers

1

Pin Configuration

YZH Package 16-Pin DSBGA Top View

Electrical Characteristics

at TA = 25°C, VDD = 3.6 V, SDZ = 1.3 V, and RL = 8 Ω + 33 μ H (unless otherwise noted).

PARAMETERPARAMETERTEST CONDITIONSMINTYPMAXUNIT
V DDSupply voltage rangeSDZ = 0.35 V, V DD = 2.5 V2.53.6
0.1
5.5
1
V
I SDZShutdown quiescent currentSDZ = 0.35 V, V DD = 3.6 V
SDZ = 0.35 V, V DD = 5.5 V
SDZ = 1.3 V, V DD = 2.5 V
0.2
0.3
35
1
1
50
μA
I SWSSoftware shutdown quiescent currentSDZ = 1.3 V, V DD = 3.6 V
SDZ = 1.3 V, V DD = 5.5 V
V DD = 2.5 V
50
75
3.5
70
110
4.5
μA
I DDSupply currentV DD = 3.6 V
V DD = 5.5 V
3.7
4.5
4.7
5.5
mA
f SWClass D Switching Frequency275300325kHz
I IHHigh-level input currentV DD = 5.5 V, SDZ = 5.8 V1μA
I ILLow-level input currentV DD = 5.5 V, SDZ = -0.3 V-1μA
t STARTStart-up time2.5 V ≤ V DD ≤ 5.5 V no pop, C IN ≤ 1 μ F5ms
PORPower on reset ON threshold22.3V
PORPower on reset hysteresis0.2V
CMRRInput common mode rejectionR L = 8 Ω , V icm = 0.5 V and V icm = V DD - 0.8 V, differential inputs shorted-70dB
V ooOutput offset voltageV DD = 3.6 V, A V = 6 dB, R L = 8 Ω , inputs AC-grounded-10210mV
Z OUTOutput Impedance in shutdown modeSDZ = 0.35 V2k Ω
Gain accuracyCompression and limiter disabled, Gain = 0 to 30 dB-0.50.5dB
PSRRPower supply rejection ratioV DD = 2.5 V to 4.7 V-80dB

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted). (1)

MINMAXUNIT
V DDSupply voltageAVDD, PVDDR, PVDDL-0.36V
Input voltageSDZ, INR+, INR-, INL+, INL--0.3V DD + 0.3V
SDA, SCL-0.36V
Continuous total power dissipationContinuous total power dissipationContinuous total power dissipationSee Dissipation RatingsSee Dissipation Ratings
T AOperating free-air temperatureOperating free-air temperature-4085°C
T JOperating junction temperatureOperating junction temperature-40150°C
R LOADMinimum load resistanceMinimum load resistance3.2Ω
T stgStorage temperatureStorage temperature-65150°C

Recommended Operating Conditions

MINMAXUNIT
V DDSupply voltageAVDD, PVDDR, PVDDL2.55.5V
V IHHigh-level input voltageSDZ, SDA, SCL1.3V
V ILLow-level input voltageSDZ, SDA, SCL0.6V
T AOperating free-air temperatureOperating free-air temperature-4085°C

Thermal Information

TPA2016D2TPA2016D2
THERMAL METRIC(1)YZH (DSBGA)RTJ (QFN)
16 PINS20 PINS
R θ JAJunction-to-ambient thermal resistance7133.3
R θ JC(top)Junction-to-case (top) thermal resistance0.422.5
R θ JBJunction-to-board thermal resistance14.49.6
ψ JTJunction-to-top characterization parameter1.90.2
ψ JBJunction-to-board characterization parameter13.69.6
R θ JC(bot)Junction-to-case (bottom) thermal resistance-2.4

Typical Application

Copyright © 2016, Texas Instruments Incorporated

Package Information

SOLDER PAD DEFINITIONSCOPPER PADSOLDER MASK (5) OPENINGCOPPER THICKNESSSTENCIL (6)(7) OPENINGSTENCIL THICKNESS
Non solder mask defined (NSMD)275 μ m (+0.0, -25 μ m)375 μ m (+0.0, -25 μ m)1 oz max (32 μ m)275 μ m × 275 μ m Sq. (rounded corners)125 μ m thick
  • (1) Circuit traces from NSMD defined PWB lands should be 75 μ m to 100 μ m wide in the exposed area inside the solder mask opening. Wider trace widths reduce device stand off and impact reliability.
  • (2) Best reliability results are achieved when the PWB laminate glass transition temperature is above the operating the range of the intended application.
  • (3) Recommend solder paste is Type 3 or Type 4.
  • (4) For a PWB using a Ni/Au surface finish, the gold thickness should be less 0.5 mm to avoid a reduction in thermal fatigue performance.
  • (5) Solder mask thickness should be less than 20 μ m on top of the copper circuit pattern
  • (6) Best solder stencil performance is achieved using laser cut stencils with electro polishing. Use of chemically etched stencils results in inferior solder paste volume control.
  • (7) Trace routing away from DSBGA device should be balanced in X and Y directions to avoid unintentional component movement due to solder wetting forces.

Figure 45. Land Pattern Dimensions

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
TPA2012D2Texas Instruments
TPA2016D2Texas InstrumentsDSBGA (16) 2.20 mm × 2.20 mm
TPA2016D2BGATexas Instruments
TPA2026D2Texas Instruments
TPA20XXD2Texas Instruments
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